In the original publication,mistakenly first and corresponding affiliation is given as:Thermoelectricity Technology Center,Hangzhou Dahe Thermo-Magnetics Co.Ltd,Hangzhou 310053,ChinaThe correct first and corresponding...In the original publication,mistakenly first and corresponding affiliation is given as:Thermoelectricity Technology Center,Hangzhou Dahe Thermo-Magnetics Co.Ltd,Hangzhou 310053,ChinaThe correct first and corresponding affiliation is:State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China.展开更多
Stimulated emission and lasing of GaN-based laser diodes(LDs)were reported at 1995[1]and 1996[2],right after the breakthrough of p-type doping[3−5],material quality[6]and the invention of high-brightness GaN-based LED...Stimulated emission and lasing of GaN-based laser diodes(LDs)were reported at 1995[1]and 1996[2],right after the breakthrough of p-type doping[3−5],material quality[6]and the invention of high-brightness GaN-based LEDs[7,8].However,it took much longer time for GaN-based LDs to achieve high power,high wall plug efficiency,and long lifetime.Until 2019,Nichia reported blue LDs with these performances[9],which open wide applications with GaN-based blue LDs.展开更多
A novel Sr2CulnO3S oxysulfide p-type semiconductor photocatalyst has been prepared by solid state reaction method and it exhibits intriguing visible light absorption properties with a bandgap of 2.3 eV. The p-type sem...A novel Sr2CulnO3S oxysulfide p-type semiconductor photocatalyst has been prepared by solid state reaction method and it exhibits intriguing visible light absorption properties with a bandgap of 2.3 eV. The p-type semiconductor character of the synthesized Sr2CuInO3 S was confirmed by Hall efficient measurement and Mott-Schottky plot analysis. First-principles density functional theory calculations （DFT） and electrochem ical measurements were performed to elucidate the electronic structure and the energy band locations. It was found that the as-synthesized Sr2CuInO3S photocatalyst has appreciate conduction and valence band positions for hydrogen and oxygen evolution, respectively. Photocat alytic hydrogen production experiments under a visible light irradiation （A〉420 nm） were carried out by loading different metal and metal-like cocatalysts on Sr2CuInO3S and Rh was found to be the best one among the tested ones.展开更多
We report the fabrication and photocatalytic property of a composite of C/CaFe2O4nanorods(NRs)in an effort to reveal the influence of carbon modification.It is demonstrated that the photocatalytic degradation activity...We report the fabrication and photocatalytic property of a composite of C/CaFe2O4nanorods(NRs)in an effort to reveal the influence of carbon modification.It is demonstrated that the photocatalytic degradation activity is dependent on the mass ratio of C to CaFe2O4.The optimal carbon content is determined to be58wt%to yield a methylene blue(MB)degradation rate of0.0058min.1,which is4.8times higher than that of the pristine CaFe2O4NRs.The decoration of carbon on the surface of CaFe2O4NRs improves its adsorption capacity of the MB dye,which is specifically adsorbed on the surface as a monolayer according to the adsorption isotherm analysis.The trapping experiments of the reactive species indicate that superoxide radicals(.O2)are the main active species responsible for the removal of MB under visible‐light irradiation.Overall,the unique feature of carbon coating enables the efficient separation and transfer of photogenerated electrons and holes,strengthens the adsorption capacity of MB,and improves the light harvesting capability,hence enhancing the overall photocatalytic degradation of MB.展开更多
In present paper, we study precisely the growth of analytic functions defined by zero order Laplace-Stieltjes transformation converging in right plane. The coefficient characterizations of generalized logarithmic p-ty...In present paper, we study precisely the growth of analytic functions defined by zero order Laplace-Stieltjes transformation converging in right plane. The coefficient characterizations of generalized logarithmic p-type and generalized lower logarithmic p-type are obtained, which improve the results of logarithmic type and lower logarithmic type.展开更多
Hexagonal WO3 nanorods are fabricated by a facile hydrothermal process at 180 ℃ using sodium tungstate and sodium chloride as starting materials. The morphology, structure, and composition of the prepared nanorods ar...Hexagonal WO3 nanorods are fabricated by a facile hydrothermal process at 180 ℃ using sodium tungstate and sodium chloride as starting materials. The morphology, structure, and composition of the prepared nanorods are studied by scanning electron microscopy, X-ray diffraction spectroscopy, and energy dispersive spectroscopy. It is found that the agglomeration of the nanorods is strongly dependent on the PH value of the reaction solution. Uniform and isolated WO3 nanorods with diameters ranging from 100 nm-150 nm and lengths up to several micrometers are obtained at PH = 2.5 and the nanorods are identified as being hexagonal in phase structure. The sensing characteristics of the WO3 nanorod sensor are obtained by measuring the dynamic response to NO2 with concentrations in the range 0.5 ppm-5 ppm and at working temperatures in the range 25 ℃-250 ℃. The obtained WO3 nanorods sensors are found to exhibit opposite sensing behaviors, depending on the working temperature. When being exposed to oxidizing NO2 gas, the WO3 nanorod sensor behaves as an n-type semiconductor as expected when the working temperature is higher than 50 ℃, whereas, it behaves as a p-type semiconductor below 50 ℃. The origin of the n- to p-type transition is correlated with the formation of an inversion layer at the surface of the WO3 nanorod at room temperature. This finding is useful for making new room temperature NO2 sensors based on hexagonal WO3 nanorods.展开更多
Zinc oxide（ZnO） is a compound semiconductor with a direct band gap and high exciton binding energy.The unique property,i.e.,high efficient light emission at ultraviolet band,makes ZnO potentially applied to the shor...Zinc oxide（ZnO） is a compound semiconductor with a direct band gap and high exciton binding energy.The unique property,i.e.,high efficient light emission at ultraviolet band,makes ZnO potentially applied to the short-wavelength light emitting devices.However,efficient p-type doping is extremely hard for ZnO.Due to the wide band gap and low valence band energy,the self-compensation from donors and high ionization energy of acceptors are the two main problems hindering the enhancement of free hole concentration.Native defects in ZnO can be divided into donor-like and acceptorlike ones.The self-compensation has been found mainly to originate from zinc interstitial and oxygen vacancy related donors.While the acceptor-like defect,zinc vacancy,is thought to be linked to complex shallow acceptors in group-VA doped ZnO.Therefore,the understanding of the behaviors of the native defects is critical to the realization of high-efficient p-type conduction.Meanwhile,some novel ideas have been extensively proposed,like double-acceptor co-doping,acceptor doping in iso-valent element alloyed ZnO,etc.,and have opened new directions for p-type doping.Some of the approaches have been positively judged.In this article,we thus review the recent（2011-now） research progress of the native defects and p-type doping approaches globally.We hope to provide a comprehensive overview and describe a complete picture of the research status of the p-type doping in ZnO for the reference of the researchers in a similar area.展开更多
The Zintl compound Mg3Sb2 has been recently identified as promising thermoelectric material owing to its high thermoelectric performance and cost-effective,nontoxicity and environment friendly characteristics.However,...The Zintl compound Mg3Sb2 has been recently identified as promising thermoelectric material owing to its high thermoelectric performance and cost-effective,nontoxicity and environment friendly characteristics.However,the intrinsically p-type Mg3Sb2 shows low figure of merit（z T = 0.23 at 723 K） for its poor electrical conductivity.In this study,a series of Mg（3-x）LixSb2 bulk materials have been prepared by high-energy ball milling and spark plasma sintering（SPS） process.Electrical transport measurements on these materials revealed significant improvement on the power factor with respect to the undoped sample,which can be essentially attributed to the increased carrier concentration,leading to a maximum z T of0.59 at 723 K with the optimum doping level x = 0.01.Additionally,the engineering z T and energy conversion efficiency are calculated to be 0.235 and 4.89%,respectively.To our best knowledge,those are the highest values of all reported p-type Mg3Sb2-based compounds with single element doping.展开更多
AlGaN-based ultraviolet light-emitting diodes(UV-LEDs) have attracted considerable interest due to their wide range of application fields. However, they are still suffering from low light out power and unsatisfactory ...AlGaN-based ultraviolet light-emitting diodes(UV-LEDs) have attracted considerable interest due to their wide range of application fields. However, they are still suffering from low light out power and unsatisfactory quantum efficiency.The utilization of polarization-doped technique by grading the Al content in p-type layer has demonstrated its effectiveness in improving LED performances by providing sufficiently high hole concentration. However, too large degree of grading through monotonously increasing the Al content causes strains in active regions, which constrains application of this technique, especially for short wavelength UV-LEDs. To further improve 340-nm UV-LED performances, segmentally graded Al content p-Al_xGa_(1-x)N has been proposed and investigated in this work. Numerical results show that the internal quantum efficiency and output power of proposed structures are improved due to the enhanced carrier concentrations and radiative recombination rate in multiple quantum wells, compared to those of the conventional UV-LED with a stationary Al content AlGaN electron blocking layer. Moreover, by adopting the segmentally graded p-Al_xGa_(1-x)N, band bending within the last quantum barrier/p-type layer interface is effectively eliminated.展开更多
Zinc oxide （ZnO） is a wide band-gap material of the Ⅱ-Ⅵ group with excellent optical properties for optoelectronics applications, such as the flat panel displays and solar cells used in sports tournament. Despite ...Zinc oxide （ZnO） is a wide band-gap material of the Ⅱ-Ⅵ group with excellent optical properties for optoelectronics applications, such as the flat panel displays and solar cells used in sports tournament. Despite its advantages, the application of ZnO is hampered by the lack of stable p-type doping. In this paper, the recent progress in this field was briefly reviewed, and a comprehensive summary of the research was carded out on ZnO fabrication methods and its electrical, optical, and magnetic properties were presented.展开更多
Nitrogen-doped, p-type ZnO thin films were grown successfully on sapphire (0001) substrates by using atomic layer epitaxy (ALE). Zn(C2H5)2 [Diethylzinc, DEZn], H2O and NH3 were used as a zinc precursor, an oxidant and...Nitrogen-doped, p-type ZnO thin films were grown successfully on sapphire (0001) substrates by using atomic layer epitaxy (ALE). Zn(C2H5)2 [Diethylzinc, DEZn], H2O and NH3 were used as a zinc precursor, an oxidant and a doping source gas, respectively. The lowest electrical resistivity of the p-type ZnO films grown by ALE and annealed at 1000 ℃ in an oxygen atmosphere for 1 h was 18.3 Ω·cm with a hole concentration of 3.71×1017 cm-3. Low temperature-photoluminescence analysis and time-dependent Hall measurement results support that the nitrogen-doped ZnO after annealing is a p-type semiconductor.展开更多
Li-doped p-type ZnO ceramics were prepared by conventional methods according to the chemical formula Zn1-xLixO2 where x=0.5, 1.0, 1.5 and 2.0 mole fraction, respectively. The crystal structures of the prepared samples...Li-doped p-type ZnO ceramics were prepared by conventional methods according to the chemical formula Zn1-xLixO2 where x=0.5, 1.0, 1.5 and 2.0 mole fraction, respectively. The crystal structures of the prepared samples were studied by X-ray diffraction analysis. The dielectric properties （including dielectric constant ε′ and dielectric loss ε″） and dc-electrical conductivity [σ（Ω^-1.cm^-1）] were investigated. The dielectric constant ε′ was sharply decreased at the low frequency range and independent on frequency at high frequency range. Otherwise, the dielectric loss ε″ varied with frequency and showed absorption peak located from 200 Hz to 4 kHz and moved to higher frequency as the concentration of Li＋ doped increased. It was found that dcelectrical conductivity logσ varied from -9 to -5 and the energy gap width were calculated by using Arrhenius equation. The p-type conductivity of Li-doped ZnO may be attributed to the formation of a Lizn-Lii donor complex, which is limited by reducing the amount of Lii.展开更多
p-Type nano-ZnFe2O4 semiconductors were gained by high-prssure treatment.Surface photovoltaic spectrum（SPS） and transient photovoltaic technology（TPV） were used for studying the photogenerated charge of nano-ZnFe2...p-Type nano-ZnFe2O4 semiconductors were gained by high-prssure treatment.Surface photovoltaic spectrum（SPS） and transient photovoltaic technology（TPV） were used for studying the photogenerated charge of nano-ZnFe2O4.Results show that the photovoltaic behavior of nano-ZnFe2O4 changed as the processing pressure increased.When the processing pressure was higher than 2 GPa,both SPS response interval and peak changed significantly.XPS results show that the non-lattice oxygen entered into the lattice and the content of lattice oxygen increased with the increase of processing pressure.The material changed from oxygen vacancy type to oxygen excess type and the photoelectric properties changed from n-type to p-type when the processing pressure is higher than 2 GPa.展开更多
Aluminium doped tin oxide films have been deposited onto glass substrates by using a simplified and low cost spray pyrolysis technique. The AI doping level varies between 0 and 30 at.% in the step of 5 at.%. The resis...Aluminium doped tin oxide films have been deposited onto glass substrates by using a simplified and low cost spray pyrolysis technique. The AI doping level varies between 0 and 30 at.% in the step of 5 at.%. The resistivity （p） is the minimum （0.38 Ω cm） for 20 at.% of AI doping. The possible mechanism behind the phenomenal zig-zag variation in resistivity with respect to AI doping is discussed in detail. The nature of conductivity changes from n-type to p-type when the AI doping level is 10 at.%. The results show that 20 at.% is the optimum doping level for good quality p-type SnO2：AI films suitable for transparent electronic devices.展开更多
The electronic structures and optical properties of B3 ZnO series of Zn4X4-yMy（X ：O, S, Se or Te; M = N, Sb, C1 or I; y = 0 or 1） are studied by first-principles calculations using a pseudopotential plane-wave meth...The electronic structures and optical properties of B3 ZnO series of Zn4X4-yMy（X ：O, S, Se or Te; M = N, Sb, C1 or I; y = 0 or 1） are studied by first-principles calculations using a pseudopotential plane-wave method. The results show that Zn d-X p orbital interactions play an important role in the p-type doping tendency in zinc-based Ⅱ-Ⅵ semiconductors. In ZnX, with increasing atomic number of X, Zn d-X p orbital interactions decrease and Zn s-X p orbital interactions increase. Additionally, substituting group-V elements for X will reduce the Zn d-X p orbital interactions while substituting group-VII elements for X will increase the Zn d-X p orbital interactions. The results also show that group-V-doped ZnX and group-Ⅷ-doped ZnX exhibit different optical behaviours due to their different orbital interaction effects.展开更多
Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well （MQW） solar cells are investigated. It is found that due to the reduction of piezoelectric polarization ...Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well （MQW） solar cells are investigated. It is found that due to the reduction of piezoelectric polarization and the enhancement of tunneling transport of photo-generated carriers in MQWs, the external quantum efficiency （EQE） of the solar cells increases in a low energy spectral range （λ 〉 370 nm） when the barrier thickness value decreases from 15 nm to 7.5 nm. But the EQE decreases abruptly when the barrier thickness value decreases down to 3.75 nm. The reasons for these experimental results are analyzed. We are aware that the reduction of depletion width in MQW region, caused by the high resistivity of the p-type GaN layer may be the main reason for the abnormally low EQE value at long wavelengths （λ 〉 370 nm）.展开更多
文摘In the original publication,mistakenly first and corresponding affiliation is given as:Thermoelectricity Technology Center,Hangzhou Dahe Thermo-Magnetics Co.Ltd,Hangzhou 310053,ChinaThe correct first and corresponding affiliation is:State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China.
基金supported by the Natural Science Foundation of Jiangsu Province(Grant.BK20232042).
文摘Stimulated emission and lasing of GaN-based laser diodes(LDs)were reported at 1995[1]and 1996[2],right after the breakthrough of p-type doping[3−5],material quality[6]and the invention of high-brightness GaN-based LEDs[7,8].However,it took much longer time for GaN-based LDs to achieve high power,high wall plug efficiency,and long lifetime.Until 2019,Nichia reported blue LDs with these performances[9],which open wide applications with GaN-based blue LDs.
基金financially supported by the National Natural Science Foundation of China(Grant No.21090341 and 21361140346)the National Basic Research Program(973 Program)of the Ministry of Science and Technology of China(Grant No.2014CB239401)
文摘A novel Sr2CulnO3S oxysulfide p-type semiconductor photocatalyst has been prepared by solid state reaction method and it exhibits intriguing visible light absorption properties with a bandgap of 2.3 eV. The p-type semiconductor character of the synthesized Sr2CuInO3 S was confirmed by Hall efficient measurement and Mott-Schottky plot analysis. First-principles density functional theory calculations （DFT） and electrochem ical measurements were performed to elucidate the electronic structure and the energy band locations. It was found that the as-synthesized Sr2CuInO3S photocatalyst has appreciate conduction and valence band positions for hydrogen and oxygen evolution, respectively. Photocat alytic hydrogen production experiments under a visible light irradiation （A〉420 nm） were carried out by loading different metal and metal-like cocatalysts on Sr2CuInO3S and Rh was found to be the best one among the tested ones.
基金supported by the National Natural Science Foundation of China(21503100)Natural Science Foundation of Jiangxi Province(20161BAB213071,20151BAB213010)+1 种基金Project of Education Department of Jiangxi Province(GJJ150325)Sponsored Program for Cultivating Youths of Outstanding Ability in Jiangxi Normal University~~
文摘We report the fabrication and photocatalytic property of a composite of C/CaFe2O4nanorods(NRs)in an effort to reveal the influence of carbon modification.It is demonstrated that the photocatalytic degradation activity is dependent on the mass ratio of C to CaFe2O4.The optimal carbon content is determined to be58wt%to yield a methylene blue(MB)degradation rate of0.0058min.1,which is4.8times higher than that of the pristine CaFe2O4NRs.The decoration of carbon on the surface of CaFe2O4NRs improves its adsorption capacity of the MB dye,which is specifically adsorbed on the surface as a monolayer according to the adsorption isotherm analysis.The trapping experiments of the reactive species indicate that superoxide radicals(.O2)are the main active species responsible for the removal of MB under visible‐light irradiation.Overall,the unique feature of carbon coating enables the efficient separation and transfer of photogenerated electrons and holes,strengthens the adsorption capacity of MB,and improves the light harvesting capability,hence enhancing the overall photocatalytic degradation of MB.
基金Supported by the Technology Project of Jiangxi Provincial Education Department(Grant No.GJJ13788)
文摘In present paper, we study precisely the growth of analytic functions defined by zero order Laplace-Stieltjes transformation converging in right plane. The coefficient characterizations of generalized logarithmic p-type and generalized lower logarithmic p-type are obtained, which improve the results of logarithmic type and lower logarithmic type.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60771019,61271070,and 61274074)the Tianjin Key Research Program of Application Foundation and Advanced Technology,China(Grant No.11JCZDJC15300)
文摘Hexagonal WO3 nanorods are fabricated by a facile hydrothermal process at 180 ℃ using sodium tungstate and sodium chloride as starting materials. The morphology, structure, and composition of the prepared nanorods are studied by scanning electron microscopy, X-ray diffraction spectroscopy, and energy dispersive spectroscopy. It is found that the agglomeration of the nanorods is strongly dependent on the PH value of the reaction solution. Uniform and isolated WO3 nanorods with diameters ranging from 100 nm-150 nm and lengths up to several micrometers are obtained at PH = 2.5 and the nanorods are identified as being hexagonal in phase structure. The sensing characteristics of the WO3 nanorod sensor are obtained by measuring the dynamic response to NO2 with concentrations in the range 0.5 ppm-5 ppm and at working temperatures in the range 25 ℃-250 ℃. The obtained WO3 nanorods sensors are found to exhibit opposite sensing behaviors, depending on the working temperature. When being exposed to oxidizing NO2 gas, the WO3 nanorod sensor behaves as an n-type semiconductor as expected when the working temperature is higher than 50 ℃, whereas, it behaves as a p-type semiconductor below 50 ℃. The origin of the n- to p-type transition is correlated with the formation of an inversion layer at the surface of the WO3 nanorod at room temperature. This finding is useful for making new room temperature NO2 sensors based on hexagonal WO3 nanorods.
基金Project supported by the State Key Program for Basic Research of China(Grant No.2011CB302003)the National Natural Science Foundation of China(Grant Nos.61274058,61322403,61504057,and 61574075)+1 种基金the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK20130013 and BK20150585)the Six Talent Peaks Project in Jiangsu Province,China(Grant No.2014XXRJ001)
文摘Zinc oxide（ZnO） is a compound semiconductor with a direct band gap and high exciton binding energy.The unique property,i.e.,high efficient light emission at ultraviolet band,makes ZnO potentially applied to the short-wavelength light emitting devices.However,efficient p-type doping is extremely hard for ZnO.Due to the wide band gap and low valence band energy,the self-compensation from donors and high ionization energy of acceptors are the two main problems hindering the enhancement of free hole concentration.Native defects in ZnO can be divided into donor-like and acceptorlike ones.The self-compensation has been found mainly to originate from zinc interstitial and oxygen vacancy related donors.While the acceptor-like defect,zinc vacancy,is thought to be linked to complex shallow acceptors in group-VA doped ZnO.Therefore,the understanding of the behaviors of the native defects is critical to the realization of high-efficient p-type conduction.Meanwhile,some novel ideas have been extensively proposed,like double-acceptor co-doping,acceptor doping in iso-valent element alloyed ZnO,etc.,and have opened new directions for p-type doping.Some of the approaches have been positively judged.In this article,we thus review the recent（2011-now） research progress of the native defects and p-type doping approaches globally.We hope to provide a comprehensive overview and describe a complete picture of the research status of the p-type doping in ZnO for the reference of the researchers in a similar area.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.U1601213 and 51572287)the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences(Grant No.QYZDB-SSW-SLH013)
文摘The Zintl compound Mg3Sb2 has been recently identified as promising thermoelectric material owing to its high thermoelectric performance and cost-effective,nontoxicity and environment friendly characteristics.However,the intrinsically p-type Mg3Sb2 shows low figure of merit（z T = 0.23 at 723 K） for its poor electrical conductivity.In this study,a series of Mg（3-x）LixSb2 bulk materials have been prepared by high-energy ball milling and spark plasma sintering（SPS） process.Electrical transport measurements on these materials revealed significant improvement on the power factor with respect to the undoped sample,which can be essentially attributed to the increased carrier concentration,leading to a maximum z T of0.59 at 723 K with the optimum doping level x = 0.01.Additionally,the engineering z T and energy conversion efficiency are calculated to be 0.235 and 4.89%,respectively.To our best knowledge,those are the highest values of all reported p-type Mg3Sb2-based compounds with single element doping.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61874161 and 11474105)the Science and Technology Program of Guangdong Province,China(Grant Nos.2017B010127001 and 2015B010105011)+4 种基金the Education Department Project of Guangdong Province,China(Grant No.2017KZDXM022)the Science and Technology Project of Guangzhou City,China(Grant No.201607010246)the Program for Changjiang Scholars and Innovative Research Team in Universities of China(Grant No.IRT13064)the Science and Technology Project of Shenzhen City,China(Grant No.GJHZ20180416164721073)the Science and Technology Planning of Guangdong Province,China(Grant No.2015B010112002)
文摘AlGaN-based ultraviolet light-emitting diodes(UV-LEDs) have attracted considerable interest due to their wide range of application fields. However, they are still suffering from low light out power and unsatisfactory quantum efficiency.The utilization of polarization-doped technique by grading the Al content in p-type layer has demonstrated its effectiveness in improving LED performances by providing sufficiently high hole concentration. However, too large degree of grading through monotonously increasing the Al content causes strains in active regions, which constrains application of this technique, especially for short wavelength UV-LEDs. To further improve 340-nm UV-LED performances, segmentally graded Al content p-Al_xGa_(1-x)N has been proposed and investigated in this work. Numerical results show that the internal quantum efficiency and output power of proposed structures are improved due to the enhanced carrier concentrations and radiative recombination rate in multiple quantum wells, compared to those of the conventional UV-LED with a stationary Al content AlGaN electron blocking layer. Moreover, by adopting the segmentally graded p-Al_xGa_(1-x)N, band bending within the last quantum barrier/p-type layer interface is effectively eliminated.
基金Funded by the National Social Science Fund Project(No.2012BTY014)
文摘Zinc oxide （ZnO） is a wide band-gap material of the Ⅱ-Ⅵ group with excellent optical properties for optoelectronics applications, such as the flat panel displays and solar cells used in sports tournament. Despite its advantages, the application of ZnO is hampered by the lack of stable p-type doping. In this paper, the recent progress in this field was briefly reviewed, and a comprehensive summary of the research was carded out on ZnO fabrication methods and its electrical, optical, and magnetic properties were presented.
文摘Nitrogen-doped, p-type ZnO thin films were grown successfully on sapphire (0001) substrates by using atomic layer epitaxy (ALE). Zn(C2H5)2 [Diethylzinc, DEZn], H2O and NH3 were used as a zinc precursor, an oxidant and a doping source gas, respectively. The lowest electrical resistivity of the p-type ZnO films grown by ALE and annealed at 1000 ℃ in an oxygen atmosphere for 1 h was 18.3 Ω·cm with a hole concentration of 3.71×1017 cm-3. Low temperature-photoluminescence analysis and time-dependent Hall measurement results support that the nitrogen-doped ZnO after annealing is a p-type semiconductor.
文摘Li-doped p-type ZnO ceramics were prepared by conventional methods according to the chemical formula Zn1-xLixO2 where x=0.5, 1.0, 1.5 and 2.0 mole fraction, respectively. The crystal structures of the prepared samples were studied by X-ray diffraction analysis. The dielectric properties （including dielectric constant ε′ and dielectric loss ε″） and dc-electrical conductivity [σ（Ω^-1.cm^-1）] were investigated. The dielectric constant ε′ was sharply decreased at the low frequency range and independent on frequency at high frequency range. Otherwise, the dielectric loss ε″ varied with frequency and showed absorption peak located from 200 Hz to 4 kHz and moved to higher frequency as the concentration of Li＋ doped increased. It was found that dcelectrical conductivity logσ varied from -9 to -5 and the energy gap width were calculated by using Arrhenius equation. The p-type conductivity of Li-doped ZnO may be attributed to the formation of a Lizn-Lii donor complex, which is limited by reducing the amount of Lii.
基金Supported by the National Natural Science Foundation of China(No.20803031)the Specialized Research Fund for Basic Research and Operating Expenses of Jilin University,China(No.200903327)+1 种基金the National Fund for Fostering Talents of Basic Science,China(No.J1103202)the Open Topic of State Key Laboratory of Superhard Materials,China(No.200904)
文摘p-Type nano-ZnFe2O4 semiconductors were gained by high-prssure treatment.Surface photovoltaic spectrum（SPS） and transient photovoltaic technology（TPV） were used for studying the photogenerated charge of nano-ZnFe2O4.Results show that the photovoltaic behavior of nano-ZnFe2O4 changed as the processing pressure increased.When the processing pressure was higher than 2 GPa,both SPS response interval and peak changed significantly.XPS results show that the non-lattice oxygen entered into the lattice and the content of lattice oxygen increased with the increase of processing pressure.The material changed from oxygen vacancy type to oxygen excess type and the photoelectric properties changed from n-type to p-type when the processing pressure is higher than 2 GPa.
基金Financial support from the University Grants Commission ofIndia through the Major Research Project(F.No.40-28/2011(SR))the DST Grant(D.O.No.SR/S2/CMP-35/2004)
文摘Aluminium doped tin oxide films have been deposited onto glass substrates by using a simplified and low cost spray pyrolysis technique. The AI doping level varies between 0 and 30 at.% in the step of 5 at.%. The resistivity （p） is the minimum （0.38 Ω cm） for 20 at.% of AI doping. The possible mechanism behind the phenomenal zig-zag variation in resistivity with respect to AI doping is discussed in detail. The nature of conductivity changes from n-type to p-type when the AI doping level is 10 at.%. The results show that 20 at.% is the optimum doping level for good quality p-type SnO2：AI films suitable for transparent electronic devices.
基金Project supported by the National Natural Science Foundation of China （Grant No 10625416）.
文摘The electronic structures and optical properties of B3 ZnO series of Zn4X4-yMy（X ：O, S, Se or Te; M = N, Sb, C1 or I; y = 0 or 1） are studied by first-principles calculations using a pseudopotential plane-wave method. The results show that Zn d-X p orbital interactions play an important role in the p-type doping tendency in zinc-based Ⅱ-Ⅵ semiconductors. In ZnX, with increasing atomic number of X, Zn d-X p orbital interactions decrease and Zn s-X p orbital interactions increase. Additionally, substituting group-V elements for X will reduce the Zn d-X p orbital interactions while substituting group-VII elements for X will increase the Zn d-X p orbital interactions. The results also show that group-V-doped ZnX and group-Ⅷ-doped ZnX exhibit different optical behaviours due to their different orbital interaction effects.
基金supported by the National Natural Science Fundation for Distinguished Young Scholars,China(Grant No.60925017)the National Natural Science Foundation of China(Grant Nos.61223005,10990100,and 61176126)the Tsinghua National Laboratory for Information Science and Technology Cross-Discipline Foundation,China
文摘Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well （MQW） solar cells are investigated. It is found that due to the reduction of piezoelectric polarization and the enhancement of tunneling transport of photo-generated carriers in MQWs, the external quantum efficiency （EQE） of the solar cells increases in a low energy spectral range （λ 〉 370 nm） when the barrier thickness value decreases from 15 nm to 7.5 nm. But the EQE decreases abruptly when the barrier thickness value decreases down to 3.75 nm. The reasons for these experimental results are analyzed. We are aware that the reduction of depletion width in MQW region, caused by the high resistivity of the p-type GaN layer may be the main reason for the abnormally low EQE value at long wavelengths （λ 〉 370 nm）.
