A tubular moving-magnet linear oscillating motor（TMMLOM） has merits of high efficiency and excellent dynamic capability. To enhance the thrust performance, quasi-Halbach permanent magnet（PM） arrays are arranged on...A tubular moving-magnet linear oscillating motor（TMMLOM） has merits of high efficiency and excellent dynamic capability. To enhance the thrust performance, quasi-Halbach permanent magnet（PM） arrays are arranged on its mover in the application of a linear electro-hydrostatic actuator in more electric aircraft. The arrays are assembled by several individual segments, which lead to gaps between them inevitably. To investigate the effects of the gaps on the radial magnetic flux density and the machine thrust in this paper, an analytical model is built considering both axial and radial gaps. The model is validated by finite element simulations and experimental results.Distributions of the magnetic flux are described in condition of different sizes of radial and axial gaps. Besides, the output force is also discussed in normal and end windings. Finally, the model has demonstrated that both kinds of gaps have a negative effect on the thrust, and the linear motor is more sensitive to radial ones.展开更多
In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on out...In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on output power and voltage ratio. The DAB converters operate with hard switching at light loads, it is difficult to achieve high efficiency. Fortunately, WBG power semiconductor devices have excellent hard switching characteristics and can increase efficiency compared to silicon (Si) devices. In particular, WBG devices can achieve ZVS at low load currents due to their low parasitic output capacitance (C<sub>o,tr</sub>) characteristics. Therefore, in this paper, the ZVS operating resion is analyzed based on the characteristics of Si, silicon carbide (SiC) and gallium nitride (GaN). Power semiconductor devices. WBG devices with low C<sub>o,tr</sub> operate at ZVS at lower load currents compared to Si devices. To verify this, experiments are conducted and the results are analyzed using a 3 kW DAB converter. For Si devices, ZVS is achieved above 1.4 kW. For WBG devices, ZVS is achieved at 700 W. Due to the ZVS conditions depending on the switching device, the DAB converter using Si devices achieves a power conversion efficiency of 91% at 1.1 kW output. On the other hand, in the case of WBG devices, power conversion efficiency of more than 98% is achieved under 11 kW conditions. In conclusion, it is confirmed that the WBG device operates in ZVS at a lower load compared to the Si device, which is advantageous in increasing light load efficiency.展开更多
基金supports of National Basic Research Program of China(973 Program)(No.2014CB046402)National Natural Science Foundation of China(Nos.51620105010,51575019,51675019,51505015)111 Program of China
文摘A tubular moving-magnet linear oscillating motor（TMMLOM） has merits of high efficiency and excellent dynamic capability. To enhance the thrust performance, quasi-Halbach permanent magnet（PM） arrays are arranged on its mover in the application of a linear electro-hydrostatic actuator in more electric aircraft. The arrays are assembled by several individual segments, which lead to gaps between them inevitably. To investigate the effects of the gaps on the radial magnetic flux density and the machine thrust in this paper, an analytical model is built considering both axial and radial gaps. The model is validated by finite element simulations and experimental results.Distributions of the magnetic flux are described in condition of different sizes of radial and axial gaps. Besides, the output force is also discussed in normal and end windings. Finally, the model has demonstrated that both kinds of gaps have a negative effect on the thrust, and the linear motor is more sensitive to radial ones.
文摘In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on output power and voltage ratio. The DAB converters operate with hard switching at light loads, it is difficult to achieve high efficiency. Fortunately, WBG power semiconductor devices have excellent hard switching characteristics and can increase efficiency compared to silicon (Si) devices. In particular, WBG devices can achieve ZVS at low load currents due to their low parasitic output capacitance (C<sub>o,tr</sub>) characteristics. Therefore, in this paper, the ZVS operating resion is analyzed based on the characteristics of Si, silicon carbide (SiC) and gallium nitride (GaN). Power semiconductor devices. WBG devices with low C<sub>o,tr</sub> operate at ZVS at lower load currents compared to Si devices. To verify this, experiments are conducted and the results are analyzed using a 3 kW DAB converter. For Si devices, ZVS is achieved above 1.4 kW. For WBG devices, ZVS is achieved at 700 W. Due to the ZVS conditions depending on the switching device, the DAB converter using Si devices achieves a power conversion efficiency of 91% at 1.1 kW output. On the other hand, in the case of WBG devices, power conversion efficiency of more than 98% is achieved under 11 kW conditions. In conclusion, it is confirmed that the WBG device operates in ZVS at a lower load compared to the Si device, which is advantageous in increasing light load efficiency.
