The traditional von Neumann architecture faces inherent limitations due to the separation of memory and computa-tion,leading to high energy consumption,significant latency,and reduced operational efficiency.Neuromorph...The traditional von Neumann architecture faces inherent limitations due to the separation of memory and computa-tion,leading to high energy consumption,significant latency,and reduced operational efficiency.Neuromorphic computing,inspired by the architecture of the human brain,offers a promising alternative by integrating memory and computational func-tions,enabling parallel,high-speed,and energy-efficient information processing.Among various neuromorphic technologies,ion-modulated optoelectronic devices have garnered attention due to their excellent ionic tunability and the availability of multi-dimensional control strategies.This review provides a comprehensive overview of recent progress in ion-modulation optoelec-tronic neuromorphic devices.It elucidates the key mechanisms underlying ionic modulation of light fields,including ion migra-tion dynamics and capture and release of charge through ions.Furthermore,the synthesis of active materials and the proper-ties of these devices are analyzed in detail.The review also highlights the application of ion-modulation optoelectronic devices in artificial vision systems,neuromorphic computing,and other bionic fields.Finally,the existing challenges and future direc-tions for the development of optoelectronic neuromorphic devices are discussed,providing critical insights for advancing this promising field.展开更多
A silicon on reflector (SOR) substrate containing a thin crystal silicon layer and a buried Si/SiO 2 Bragg reflector is reported. The substrate, which is applied to optoelectronic devices, is fabricated by using Si...A silicon on reflector (SOR) substrate containing a thin crystal silicon layer and a buried Si/SiO 2 Bragg reflector is reported. The substrate, which is applied to optoelectronic devices, is fabricated by using Si based sol gel sticking and smart cut techniques. The reflectivity of the SOR substrate is close to unity at 1 3μm's wavelength under the normal incidence.展开更多
With a large number of researches being conducted on two?dimen?sional(2D)materials,their unique properties in optics,electrics,mechanics,and magnetics have attracted increasing attention.Accordingly,the idea of combin...With a large number of researches being conducted on two?dimen?sional(2D)materials,their unique properties in optics,electrics,mechanics,and magnetics have attracted increasing attention.Accordingly,the idea of combining distinct functional 2D materials into heterostructures naturally emerged that pro?vides unprecedented platforms for exploring new physics that are not accessible in a single 2D material or 3D heterostructures.Along with the rapid development of controllable,scalable,and programmed synthesis techniques of high?quality 2D heterostructures,various heterostructure devices with extraordinary performance have been designed and fabricated,including tunneling transistors,photodetectors,and spintronic devices.In this review,we present a summary of the latest progresses in fabrications,properties,and applications of di erent types of 2D heterostruc?tures,followed by the discussions on present challenges and perspectives of further investigations.展开更多
Recent progress of research for graphene applications in electronic and optoelectronic devices is reviewed, and recent developments in circuits based on graphene devices are summarized. The bandgap-mobility tradeoff i...Recent progress of research for graphene applications in electronic and optoelectronic devices is reviewed, and recent developments in circuits based on graphene devices are summarized. The bandgap-mobility tradeoff inevitably constrains the application of graphene for the conventional field-effect transistor （FET） devices in digital applications. However, this shortcoming has not dampened the enthusiasm of the research community toward graphene electronics. Aside from high mobility, graphene offers numerous other amazing electrical, optical, thermal, and mechanical properties that continually motivate innovations.展开更多
Single-molecule devices not only promise to provide an alternative strategy to break through the miniaturization and functionalization bottlenecks faced by traditional semiconductor devices,but also provide a reliable...Single-molecule devices not only promise to provide an alternative strategy to break through the miniaturization and functionalization bottlenecks faced by traditional semiconductor devices,but also provide a reliable platform for exploration of the intrinsic properties of matters at the single-molecule level.Because the regulation of the electrical properties of single-molecule devices will be a key factor in enabling further advances in the development of molecular electronics,it is necessary to clarify the interactions between the charge transport occurring in the device and the external fields,particularly the optical field.This review mainly introduces the optoelectronic effects that are involved in single-molecule devices,including photoisomerization switching,photoconductance,plasmon-induced excitation,photovoltaic effect,and electroluminescence.We also summarize the optoelectronic mechanisms of single-molecule devices,with particular emphasis on the photoisomerization,photoexcitation,and photo-assisted tunneling processes.Finally,we focus the discussion on the opportunities and challenges arising in the single-molecule optoelectronics field and propose further possible breakthroughs.展开更多
Rapid developments in artificial intelligence trigger demands for perception and learning of external environments through visual perception systems.Neuromorphic devices and integrated system with photosensing and res...Rapid developments in artificial intelligence trigger demands for perception and learning of external environments through visual perception systems.Neuromorphic devices and integrated system with photosensing and response functions can be constructed to mimic complex biological visual sensing behaviors.Here,recent progresses on optoelectronic neuromorphic memristors and optoelectronic neuromorphic transistors are briefly reviewed.A variety of visual synaptic functions stimulated on optoelectronic neuromorphic devices are discussed,including light-triggered short-term plasticities,long-term plasticities,and neural facilitation.These optoelectronic neuromorphic devices can also mimic human visual perception,information processing,and cognition.The optoelectronic neuromorphic devices that simulate biological visual perception functions will have potential application prospects in areas such as bionic neurological optoelectronic systems and intelligent robots.展开更多
Film morphology of emissive layers is crucial to the performance and stability of solution-processable organic light-emitting diodes(OLEDs). Compared to the interpenetration of conjugated polymer chain,small molecular...Film morphology of emissive layers is crucial to the performance and stability of solution-processable organic light-emitting diodes(OLEDs). Compared to the interpenetration of conjugated polymer chain,small molecular emitter with a flexible side chain always presents easily aggregation upon external treatment, and caused π-electronic coupling, which is undesirable for the efficiency and stability of deep-blue OLEDs. Herein, we proposed a side-chain coupling strategy to enhance the film morphological an emission stability of solution-processable small molecular deep-blue emitter. In contrary to “parent” MC8 TPA,the crosslinkable styryl and vinyl units were introduced as ended unit at the side-chain of Cm TPA and OEYTPA. Interestingly, Cm TPA and OEYTPA films present a relatively stable morphology and uniform deep-blue emission after thermal annealing(160 ℃) in the atmosphere, different to the discontinuous MC8 TPA annealed film. Besides, compared to the Cm TPA and OEYTPA ones, serious polaron formation in the MC8 TPA annealed film also negative to the deep-blue emission, according to transient absorption analysis. Therefore, both Cm TPA and OEYTPA annealed film obtained at 140 ℃ present an excellent deep-blue ASE behavior with a 445 nm, but absence for MC8 TPA ones, associated with the disruption of annealed films. Finally, enhancement of device performance based on Cm TPA and OEYTPA film(~40%)after thermal annealing with a similar performance curves also confirmed the assumption above. Therefore, these results also supported the effectiveness of our side-chain coupling strategy for optoelectronic applications.展开更多
High-performance neuromorphic computing(i.e.,brain-like computing)is envisioned to seriously demand optoelectronically integrated artificial neural networks(ANNs)in the future.Optoelectronic synaptic devices are criti...High-performance neuromorphic computing(i.e.,brain-like computing)is envisioned to seriously demand optoelectronically integrated artificial neural networks(ANNs)in the future.Optoelectronic synaptic devices are critical building blocks for optoelectronically integrated ANNs.For the large-scale deployment of high-performance neuromorphic computing in the future,it would be advantageous to fabricate optoelectronic synaptic devices by using advanced silicon(Si)technologies.This calls for the development of Si-based optoelectronic synaptic devices.In this work we review the use of Si materials to make optoelectronic synaptic devices,which have either two-terminal or three-terminal structures.A series of important synaptic functionalities have been well mimicked by using these Si-based optoelectronic synaptic devices.We also present the outlook of using Si materials for optoelectronic synaptic devices.展开更多
Organic optoelectronic integrated devices（OIDs） with ultraviolet（UV） photodetectivity and different color emitting were constructed by using a thermally activated delayed fluorescence（TADF） material 4, 5-bis（ca...Organic optoelectronic integrated devices（OIDs） with ultraviolet（UV） photodetectivity and different color emitting were constructed by using a thermally activated delayed fluorescence（TADF） material 4, 5-bis（carbazol-9-yl）-1, 2-dicyanobenzene（2 CzPN） as host. The OIDs doping with typical red phosphorescent dye [tris（1-phenylisoquinoline）iridium（Ⅲ）, Ir（piq）3], orange phosphorescent dye {bis[2-（4-tertbutylphenyl）benzothiazolato-N,C-（2＇）]iridium（acetylacetonate）,（tbt）2 Ir（acac）}, and blue phosphorescent dye [bis（2, 4-di-fluorophenylpyridinato）-tetrakis（1-pyrazolyl）borate iridium（Ⅲ）, FIr6] were investigated and compared. The（tbt）2 Ir（acac）-doped orange device showed better performance than those of red and blue devices, which was ascribed to more effective energy transfer. Meanwhile, at a low dopant concentration of 3 wt.%, the（tbt）2 Ir（acac）-doped OIDs showed the maximum luminance, current efficiency, power efficiency of 70786 cd/m^2, 39.55 cd/A, and 23.92 lm/W, respectively, and a decent detectivity of 1.07 × 10^11 Jones at a bias of -2 V under the UV-350 nm illumination. This work may arouse widespread interest in constructing high efficiency and luminance OIDs based on doping phosphorescent dye.展开更多
In the last decade, the rise of two-dimensional （2D） materials has attracted a tremendous amount of interest for the entire field of photonics and opto-electronics. The mechanism of light-matter interaction in 2D ma...In the last decade, the rise of two-dimensional （2D） materials has attracted a tremendous amount of interest for the entire field of photonics and opto-electronics. The mechanism of light-matter interaction in 2D materials challenges the knowledge of materials physics, which drives the rapid development of materials synthesis and device applications. 2D materials coupled with plasmonic effects show impressive optical characteristics, involving efficient charge transfer, plas- monic hot electrons doping, enhanced light-emitting, and ultrasensitive photodetection. Here, we briefly review the recent remarkable progress of 2D materials, mainly on graphene and transition metal dichalcogenides, focusing on their tunable optical properties and improved opto-electronic devices with plasmonic effects. The mechanism of plasmon enhanced light-matter interaction in 2D materials is elaborated in detail, and the state-of-the-art of device applications is compre- hensively described. In the future, the field of 2D materials holds great promise as an important platform for materials science and opto-electronic engineering, enabling an emerging interdisciplinary research field spanning from clean energy to information technology.展开更多
The performances of organic optoelectronic devices, such as organic light emitting diodes and polymer solar cells, have rapidly improved in the past decade. The stability of an organic optoelectronic device has become...The performances of organic optoelectronic devices, such as organic light emitting diodes and polymer solar cells, have rapidly improved in the past decade. The stability of an organic optoelectronic device has become a key problem for further development. In this paper, we report one simple encapsulation method for organic optoelectronic devices with a parafilm, based on ternary polymer solar cells （PSCs）. The power conversion efficiencies （PCE） of PSCs with and without encapsulation decrease from 2.93% to 2.17% and from 2.87% to 1.16% after 168-hours of degradation under an ambient environment, respectively. The stability of PSCs could be enhanced by encapsulation with a parafilm. The encapsulation method is a competitive choice for organic optoelectronic devices, owing to its low cost and compatibility with flexible devices.展开更多
With the rapid development of science and technology,the emergence of new application scenarios,such as robots,driverless vehicles and smart city,puts forward high requirements for artificial visual systems.Optoelectr...With the rapid development of science and technology,the emergence of new application scenarios,such as robots,driverless vehicles and smart city,puts forward high requirements for artificial visual systems.Optoelectronic synaptic devices have attracted much attention due to their advantages in sensing,memory and computing integration.In this work,via band structure engineering and heterostructure designing,a heterojunction optoelectronic synaptic device based on Cu doped with n-type SrTiO_(3)(Cu:STO)film combined with p-type CuAlO_(2)(CAO)thin film was fabricated.It is found surprisingly that the optoelectronic device based on Cu:STO/CAO p-n heterojunction exhibits a rapid response of 2 ms,and that it has a wideband response from visible to near-infrared(NIR)region.Additionally,a series of important synaptic functions,including excitatory postsynaptic current(EPSC),paired-pulse facilitation(PPF),shortterm potentiation(STP)to long-term potentiation(LTP)transition,learning experience behavior and image sharpening,have been successfully simulated on the device.More importantly,the performance of the device remains still stable and reliable after several months which were stored at room temperature and atmospheric pressure.Based on these advantages,the optoelectronic synaptic devices demonstrated here provide great potential in the new generation of artificial visual systems.展开更多
In the high-frequency microwave photonics field,Radio over Fiber (RoF) technology has become a hot topic in the development of next generation broadband wireless communication technologies.In recent years,based on new...In the high-frequency microwave photonics field,Radio over Fiber (RoF) technology has become a hot topic in the development of next generation broadband wireless communication technologies.In recent years,based on new optoelectronic devices that support RoF technology,several optical generation and receiving techniques of millimeter-wave subcarriers have been developed,including external modulation,radio frequency up-conversion,heterodyning and millimeter-wave modulated optical pulse generator.The development of these technologies will no doubt quicken the pace of commercialization of RoF technology.展开更多
The traditional von Neumann architecture has demonstrated inefficiencies in parallel computing and adaptive learn-ing,rendering it incapable of meeting the growing demand for efficient and high-speed computing.Neuromo...The traditional von Neumann architecture has demonstrated inefficiencies in parallel computing and adaptive learn-ing,rendering it incapable of meeting the growing demand for efficient and high-speed computing.Neuromorphic comput-ing with significant advantages such as high parallelism and ultra-low power consumption is regarded as a promising pathway to overcome the limitations of conventional computers and achieve the next-generation artificial intelligence.Among various neuromorphic devices,the artificial synapses based on electrolyte-gated transistors stand out due to their low energy consump-tion,multimodal sensing/recording capabilities,and multifunctional integration.Moreover,the emerging optoelectronic neuro-morphic devices which combine the strengths of photonics and electronics have demonstrated substantial potential in the neu-romorphic computing field.Therefore,this article reviews recent advancements in electrolyte-gated optoelectronic neuromor-phic transistors.First,it provides an overview of artificial optoelectronic synapses and neurons,discussing aspects such as device structures,operating mechanisms,and neuromorphic functionalities.Next,the potential applications of optoelectronic synapses in different areas such as artificial visual system,pain system,and tactile perception systems are elaborated.Finally,the current challenges are summarized,and future directions for their developments are proposed.展开更多
The two-dimensional van der Waals layered semiconductor In_(2)Se_(3) has emerged as a promising candidate for non-volatile ferroelectric memory,optoelectronic devices,and polymorphic phase engineering.Polymorphic In_(...The two-dimensional van der Waals layered semiconductor In_(2)Se_(3) has emerged as a promising candidate for non-volatile ferroelectric memory,optoelectronic devices,and polymorphic phase engineering.Polymorphic In_(2)Se_(3) typically stabilizes in three distinct phases:α-,β′-,and β^(*)-In_(2)Se_(3),each dominant within specific temperature ranges.Although the crystal structures and ferroelectric properties of these phases have been widely studied,the unambiguous assignment of their in-plane and out-of-plane ferroelectric behaviors,as well as the mechanisms governing their phase transitions,remains a subject of active debate.In this study,we investigate the evolution of atomic and electronic structures in molecular beam epitaxy-grown ultrathin In_(2)Se_(3) films through correlated microstructural and macroscopic physical property analysis.By employing scanning tunneling microscopy/spectroscopy,temperature-dependent Raman spectroscopy,and piezoresponse force microscopy,we demonstrate a reversible temperature-induced phase transition between the in-plane ferroelectric β^(*)and antiferroelectric β′phases.Furthermore,we confirm robust out-of-plane ferroelectric polarization in the as-grown films and achieve an electric-field-driven transition from the β^(*)to β′phase.Our findings not only advance the fundamental understanding of phase transitions and polarization evolution in two-dimensional semiconductors but also open new avenues for the design of tunable,non-volatile ferroelectric memory devices.展开更多
Metal halide perovskites, as a novel class of semiconductor optoelectronic materials, combine the excellent optoelectronic properties of inorganic semiconductors with the advantages of low-cost, printable fabrication ...Metal halide perovskites, as a novel class of semiconductor optoelectronic materials, combine the excellent optoelectronic properties of inorganic semiconductors with the advantages of low-cost, printable fabrication typical of organic semiconductors, making them a cutting-edge research focus in the field of semiconductor optoelectronic devices.展开更多
The influence of DBR in resonant cavity on the characteristics of the reflectivity of InGaAs/GaAs MQW SEED arrays has been discussed. InGaAs/GaAs acting as the active region of MQW SEED to gain 980nm work wavele...The influence of DBR in resonant cavity on the characteristics of the reflectivity of InGaAs/GaAs MQW SEED arrays has been discussed. InGaAs/GaAs acting as the active region of MQW SEED to gain 980nm work wavelergth has been introduced. A new resonant cavity structure of the InGaAs/GaAs MQW SEED arrays has been designed and analyzed. The MQW materials grown by MOCVD system have also been measured and analyzed with micro optical spot reflection spectra, PL measurement and X ray measurement. The results of measurement prove the good quality of the wafer and the accuracy of our design and analysis of the structure of the device.展开更多
This paper reports on the design,fabrication,and performance of an integrated electro-absorptive modulated laser based on butt-joint configuration for 10Gbit/s application.This paper mainly aims at two aspects.One is ...This paper reports on the design,fabrication,and performance of an integrated electro-absorptive modulated laser based on butt-joint configuration for 10Gbit/s application.This paper mainly aims at two aspects.One is to improve the optical coupling between the laser and modulator;another is to increase the bandwidth of such devices by reducing the capacitance parameter of the modulator.The integrated devices exhibit high static and dynamic characteristics. Typical threshold current is 15mA,with some value as low as 8mA.Output power at 100mA is more than 10mW.The extinction characteristics,modulation bandwidth,and electrical return loss are measured.3dB bandwidth more than 10GHz is monitored.展开更多
<div style="text-align:justify;"> In order to meet the needs of the rapid development of optical fiber communication technology, combined with the thinking of the Internet of Things, a new idea of desi...<div style="text-align:justify;"> In order to meet the needs of the rapid development of optical fiber communication technology, combined with the thinking of the Internet of Things, a new idea of designing an optical fiber test equipment using Raspberry Pi is proposed. At the same time, the design of a multi-parameter measuring device for optical fiber signals based on Flask was completed. </div>展开更多
Nowadays, the soar of photovoltaic performance of perovskite solar cells has set off a fever in the study of metal halide perovskite materials. The excellent optoelectronic properties and defect tolerance feature allo...Nowadays, the soar of photovoltaic performance of perovskite solar cells has set off a fever in the study of metal halide perovskite materials. The excellent optoelectronic properties and defect tolerance feature allow metal halide perovskite to be employed in a wide variety of applications. This article provides a holistic review over the current progress and future prospects of metal halide perovskite materials in representative promising applications, including traditional optoelectronic devices(solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices(artificial synapses and memristors) and pressure-induced emission. This review highlights the fundamentals, the current progress and the remaining challenges for each application, aiming to provide a comprehensive overview of the development status and a navigation of future research for metal halide perovskite materials and devices.展开更多
基金supported by National Natural Science Foundation of China(62174164,U23A20568,and U22A2075)National Key Research and Development Project(2021YFA1202600)+2 种基金Talent Plan of Shanghai Branch,Chinese Academy of Sciences(CASSHB-QNPD-2023-022)Ningbo Technology Project(2022A-007-C)Ningbo Key Research and Development Project(2023Z021).
文摘The traditional von Neumann architecture faces inherent limitations due to the separation of memory and computa-tion,leading to high energy consumption,significant latency,and reduced operational efficiency.Neuromorphic computing,inspired by the architecture of the human brain,offers a promising alternative by integrating memory and computational func-tions,enabling parallel,high-speed,and energy-efficient information processing.Among various neuromorphic technologies,ion-modulated optoelectronic devices have garnered attention due to their excellent ionic tunability and the availability of multi-dimensional control strategies.This review provides a comprehensive overview of recent progress in ion-modulation optoelec-tronic neuromorphic devices.It elucidates the key mechanisms underlying ionic modulation of light fields,including ion migra-tion dynamics and capture and release of charge through ions.Furthermore,the synthesis of active materials and the proper-ties of these devices are analyzed in detail.The review also highlights the application of ion-modulation optoelectronic devices in artificial vision systems,neuromorphic computing,and other bionic fields.Finally,the existing challenges and future direc-tions for the development of optoelectronic neuromorphic devices are discussed,providing critical insights for advancing this promising field.
文摘A silicon on reflector (SOR) substrate containing a thin crystal silicon layer and a buried Si/SiO 2 Bragg reflector is reported. The substrate, which is applied to optoelectronic devices, is fabricated by using Si based sol gel sticking and smart cut techniques. The reflectivity of the SOR substrate is close to unity at 1 3μm's wavelength under the normal incidence.
基金supported by NSF of China(Grant No.61775241)partly by the Innovation-driven Project(Grant No.2017CX019)the funding support from the Australian Research Council(ARC Discovery Projects,DP180102976)
文摘With a large number of researches being conducted on two?dimen?sional(2D)materials,their unique properties in optics,electrics,mechanics,and magnetics have attracted increasing attention.Accordingly,the idea of combining distinct functional 2D materials into heterostructures naturally emerged that pro?vides unprecedented platforms for exploring new physics that are not accessible in a single 2D material or 3D heterostructures.Along with the rapid development of controllable,scalable,and programmed synthesis techniques of high?quality 2D heterostructures,various heterostructure devices with extraordinary performance have been designed and fabricated,including tunneling transistors,photodetectors,and spintronic devices.In this review,we present a summary of the latest progresses in fabrications,properties,and applications of di erent types of 2D heterostruc?tures,followed by the discussions on present challenges and perspectives of further investigations.
文摘Recent progress of research for graphene applications in electronic and optoelectronic devices is reviewed, and recent developments in circuits based on graphene devices are summarized. The bandgap-mobility tradeoff inevitably constrains the application of graphene for the conventional field-effect transistor （FET） devices in digital applications. However, this shortcoming has not dampened the enthusiasm of the research community toward graphene electronics. Aside from high mobility, graphene offers numerous other amazing electrical, optical, thermal, and mechanical properties that continually motivate innovations.
基金We acknowledge primary financial supports from the National Key R&D Program of China(2017YFA0204901,2021YFA1200101 and 2021YFA1200102)the National Natural Science Foundation of China(22150013,21727806,21933001 and 22173050)+1 种基金the Tencent Foundation through the XPLORER PRIZE“Frontiers Science Center for New Organic Matter”at Nankai University(63181206).
文摘Single-molecule devices not only promise to provide an alternative strategy to break through the miniaturization and functionalization bottlenecks faced by traditional semiconductor devices,but also provide a reliable platform for exploration of the intrinsic properties of matters at the single-molecule level.Because the regulation of the electrical properties of single-molecule devices will be a key factor in enabling further advances in the development of molecular electronics,it is necessary to clarify the interactions between the charge transport occurring in the device and the external fields,particularly the optical field.This review mainly introduces the optoelectronic effects that are involved in single-molecule devices,including photoisomerization switching,photoconductance,plasmon-induced excitation,photovoltaic effect,and electroluminescence.We also summarize the optoelectronic mechanisms of single-molecule devices,with particular emphasis on the photoisomerization,photoexcitation,and photo-assisted tunneling processes.Finally,we focus the discussion on the opportunities and challenges arising in the single-molecule optoelectronics field and propose further possible breakthroughs.
基金Project supported by the National Natural Science Foundation of China(Grant No.51972316)Open Project of State Key Laboratory of ASIC&System(Grant No.2019KF006)+1 种基金Zhejiang Provincial Natural Science Foundation of China(Grant No.LR18F040002)Program for Ningbo Municipal Science and Technology Innovative Research Team,China(Grant No.2016B10005).
文摘Rapid developments in artificial intelligence trigger demands for perception and learning of external environments through visual perception systems.Neuromorphic devices and integrated system with photosensing and response functions can be constructed to mimic complex biological visual sensing behaviors.Here,recent progresses on optoelectronic neuromorphic memristors and optoelectronic neuromorphic transistors are briefly reviewed.A variety of visual synaptic functions stimulated on optoelectronic neuromorphic devices are discussed,including light-triggered short-term plasticities,long-term plasticities,and neural facilitation.These optoelectronic neuromorphic devices can also mimic human visual perception,information processing,and cognition.The optoelectronic neuromorphic devices that simulate biological visual perception functions will have potential application prospects in areas such as bionic neurological optoelectronic systems and intelligent robots.
基金supported by the National Natural Science Foundation of China (Nos.22075136,61874053)National Key Research and Development Program of China (No.2020YFA0709900)+5 种基金Natural Science Funds of the Education Committee of Jiangsu Province (No.18KJA430009)Natural Science Foundation of Jiangsu Province (No.BK20200700)“High-Level Talents in Six Industries” of Jiangsu Province (No.XYDXX-019)Chain Postdoctoral Science Foundation (No.2021M692623)the open research fund from State Key Laboratory of Supramolecular Structure and Materials (No.sklssm202108)Anhui Province Key Laboratory of Environmentfriendly Polymer Materials and Anhui Province Key Laboratory of Optoelectronic Materials Science and Technology。
文摘Film morphology of emissive layers is crucial to the performance and stability of solution-processable organic light-emitting diodes(OLEDs). Compared to the interpenetration of conjugated polymer chain,small molecular emitter with a flexible side chain always presents easily aggregation upon external treatment, and caused π-electronic coupling, which is undesirable for the efficiency and stability of deep-blue OLEDs. Herein, we proposed a side-chain coupling strategy to enhance the film morphological an emission stability of solution-processable small molecular deep-blue emitter. In contrary to “parent” MC8 TPA,the crosslinkable styryl and vinyl units were introduced as ended unit at the side-chain of Cm TPA and OEYTPA. Interestingly, Cm TPA and OEYTPA films present a relatively stable morphology and uniform deep-blue emission after thermal annealing(160 ℃) in the atmosphere, different to the discontinuous MC8 TPA annealed film. Besides, compared to the Cm TPA and OEYTPA ones, serious polaron formation in the MC8 TPA annealed film also negative to the deep-blue emission, according to transient absorption analysis. Therefore, both Cm TPA and OEYTPA annealed film obtained at 140 ℃ present an excellent deep-blue ASE behavior with a 445 nm, but absence for MC8 TPA ones, associated with the disruption of annealed films. Finally, enhancement of device performance based on Cm TPA and OEYTPA film(~40%)after thermal annealing with a similar performance curves also confirmed the assumption above. Therefore, these results also supported the effectiveness of our side-chain coupling strategy for optoelectronic applications.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2017YFA0205704 and 2018YFB2200101)the National Natural Science Foundation of China(Grant Nos.91964107 and 61774133)+2 种基金the Fundamental Research Funds for the Central Universities,China(Grant No.2018XZZX003-02)the National Natural Science Foundation of China for Innovative Research Groups(Grant No.61721005)the Zhejiang University Education Foundation Global Partnership Fund.
文摘High-performance neuromorphic computing(i.e.,brain-like computing)is envisioned to seriously demand optoelectronically integrated artificial neural networks(ANNs)in the future.Optoelectronic synaptic devices are critical building blocks for optoelectronically integrated ANNs.For the large-scale deployment of high-performance neuromorphic computing in the future,it would be advantageous to fabricate optoelectronic synaptic devices by using advanced silicon(Si)technologies.This calls for the development of Si-based optoelectronic synaptic devices.In this work we review the use of Si materials to make optoelectronic synaptic devices,which have either two-terminal or three-terminal structures.A series of important synaptic functionalities have been well mimicked by using these Si-based optoelectronic synaptic devices.We also present the outlook of using Si materials for optoelectronic synaptic devices.
基金Project supported by the National Natural Science Foundation of China(Grant No.61675041)the National Science Funds for Creative Research Groups of China(Grant No.61421002)
文摘Organic optoelectronic integrated devices（OIDs） with ultraviolet（UV） photodetectivity and different color emitting were constructed by using a thermally activated delayed fluorescence（TADF） material 4, 5-bis（carbazol-9-yl）-1, 2-dicyanobenzene（2 CzPN） as host. The OIDs doping with typical red phosphorescent dye [tris（1-phenylisoquinoline）iridium（Ⅲ）, Ir（piq）3], orange phosphorescent dye {bis[2-（4-tertbutylphenyl）benzothiazolato-N,C-（2＇）]iridium（acetylacetonate）,（tbt）2 Ir（acac）}, and blue phosphorescent dye [bis（2, 4-di-fluorophenylpyridinato）-tetrakis（1-pyrazolyl）borate iridium（Ⅲ）, FIr6] were investigated and compared. The（tbt）2 Ir（acac）-doped orange device showed better performance than those of red and blue devices, which was ascribed to more effective energy transfer. Meanwhile, at a low dopant concentration of 3 wt.%, the（tbt）2 Ir（acac）-doped OIDs showed the maximum luminance, current efficiency, power efficiency of 70786 cd/m^2, 39.55 cd/A, and 23.92 lm/W, respectively, and a decent detectivity of 1.07 × 10^11 Jones at a bias of -2 V under the UV-350 nm illumination. This work may arouse widespread interest in constructing high efficiency and luminance OIDs based on doping phosphorescent dye.
基金Project supported by the National Basic Research Program of China(Grant No.2015CB932403)the National Natural Science Foundation of China(Grant Nos.61422501,11674012,11374023,and 61521004)+2 种基金Beijing Natural Science Foundation,China(Grant No.L140007)Foundation for the Author of National Excellent Doctoral Dissertation of China(Grant No.201420)National Program for Support of Top-notch Young Professionals,China
文摘In the last decade, the rise of two-dimensional （2D） materials has attracted a tremendous amount of interest for the entire field of photonics and opto-electronics. The mechanism of light-matter interaction in 2D materials challenges the knowledge of materials physics, which drives the rapid development of materials synthesis and device applications. 2D materials coupled with plasmonic effects show impressive optical characteristics, involving efficient charge transfer, plas- monic hot electrons doping, enhanced light-emitting, and ultrasensitive photodetection. Here, we briefly review the recent remarkable progress of 2D materials, mainly on graphene and transition metal dichalcogenides, focusing on their tunable optical properties and improved opto-electronic devices with plasmonic effects. The mechanism of plasmon enhanced light-matter interaction in 2D materials is elaborated in detail, and the state-of-the-art of device applications is compre- hensively described. In the future, the field of 2D materials holds great promise as an important platform for materials science and opto-electronic engineering, enabling an emerging interdisciplinary research field spanning from clean energy to information technology.
基金Project supported by the Fundamental Research Funds for the Central Universities,China(Grant No.2013JBZ004)the National Natural Science Foundation of China(Grant No.61377029)the Beijing Natural Science Foundation,China(Grant No.2122050)
文摘The performances of organic optoelectronic devices, such as organic light emitting diodes and polymer solar cells, have rapidly improved in the past decade. The stability of an organic optoelectronic device has become a key problem for further development. In this paper, we report one simple encapsulation method for organic optoelectronic devices with a parafilm, based on ternary polymer solar cells （PSCs）. The power conversion efficiencies （PCE） of PSCs with and without encapsulation decrease from 2.93% to 2.17% and from 2.87% to 1.16% after 168-hours of degradation under an ambient environment, respectively. The stability of PSCs could be enhanced by encapsulation with a parafilm. The encapsulation method is a competitive choice for organic optoelectronic devices, owing to its low cost and compatibility with flexible devices.
基金financially supported by the National Science Funds for Excellent Young Scholars of China(No.61822106)the Natural Science Foundation of China(Nos.U19A2070,62074025)the National Key Research&Development Program(No.2020YFA0309200)。
文摘With the rapid development of science and technology,the emergence of new application scenarios,such as robots,driverless vehicles and smart city,puts forward high requirements for artificial visual systems.Optoelectronic synaptic devices have attracted much attention due to their advantages in sensing,memory and computing integration.In this work,via band structure engineering and heterostructure designing,a heterojunction optoelectronic synaptic device based on Cu doped with n-type SrTiO_(3)(Cu:STO)film combined with p-type CuAlO_(2)(CAO)thin film was fabricated.It is found surprisingly that the optoelectronic device based on Cu:STO/CAO p-n heterojunction exhibits a rapid response of 2 ms,and that it has a wideband response from visible to near-infrared(NIR)region.Additionally,a series of important synaptic functions,including excitatory postsynaptic current(EPSC),paired-pulse facilitation(PPF),shortterm potentiation(STP)to long-term potentiation(LTP)transition,learning experience behavior and image sharpening,have been successfully simulated on the device.More importantly,the performance of the device remains still stable and reliable after several months which were stored at room temperature and atmospheric pressure.Based on these advantages,the optoelectronic synaptic devices demonstrated here provide great potential in the new generation of artificial visual systems.
基金supported by the National Natural Science Foundation of China under Grant No.60871067
文摘In the high-frequency microwave photonics field,Radio over Fiber (RoF) technology has become a hot topic in the development of next generation broadband wireless communication technologies.In recent years,based on new optoelectronic devices that support RoF technology,several optical generation and receiving techniques of millimeter-wave subcarriers have been developed,including external modulation,radio frequency up-conversion,heterodyning and millimeter-wave modulated optical pulse generator.The development of these technologies will no doubt quicken the pace of commercialization of RoF technology.
基金supported by the Hunan Science Fund for Distinguished Young Scholars(2023JJ10069)the National Natural Science Foundation of China(52172169)the Project of State Key Laboratory of Precision Manufacturing for Extreme Service Performance,Central South University(ZZYJKT2024-02).
文摘The traditional von Neumann architecture has demonstrated inefficiencies in parallel computing and adaptive learn-ing,rendering it incapable of meeting the growing demand for efficient and high-speed computing.Neuromorphic comput-ing with significant advantages such as high parallelism and ultra-low power consumption is regarded as a promising pathway to overcome the limitations of conventional computers and achieve the next-generation artificial intelligence.Among various neuromorphic devices,the artificial synapses based on electrolyte-gated transistors stand out due to their low energy consump-tion,multimodal sensing/recording capabilities,and multifunctional integration.Moreover,the emerging optoelectronic neuro-morphic devices which combine the strengths of photonics and electronics have demonstrated substantial potential in the neu-romorphic computing field.Therefore,this article reviews recent advancements in electrolyte-gated optoelectronic neuromor-phic transistors.First,it provides an overview of artificial optoelectronic synapses and neurons,discussing aspects such as device structures,operating mechanisms,and neuromorphic functionalities.Next,the potential applications of optoelectronic synapses in different areas such as artificial visual system,pain system,and tactile perception systems are elaborated.Finally,the current challenges are summarized,and future directions for their developments are proposed.
基金supported by the National Natural Science Foundation of China(Grant Nos.92365203,12534013,12174096,and 12474167)the Hunan Provincial Science Fund for Distinguished Young Scholars(Grant No.2022JJ10060)+1 种基金the Science and Technology Innovation Program of Hunan Province(Grant Nos.2025ZYJ001 and 2021RC4026)the Science Fund for Self-initiated Innovation of NUDT。
文摘The two-dimensional van der Waals layered semiconductor In_(2)Se_(3) has emerged as a promising candidate for non-volatile ferroelectric memory,optoelectronic devices,and polymorphic phase engineering.Polymorphic In_(2)Se_(3) typically stabilizes in three distinct phases:α-,β′-,and β^(*)-In_(2)Se_(3),each dominant within specific temperature ranges.Although the crystal structures and ferroelectric properties of these phases have been widely studied,the unambiguous assignment of their in-plane and out-of-plane ferroelectric behaviors,as well as the mechanisms governing their phase transitions,remains a subject of active debate.In this study,we investigate the evolution of atomic and electronic structures in molecular beam epitaxy-grown ultrathin In_(2)Se_(3) films through correlated microstructural and macroscopic physical property analysis.By employing scanning tunneling microscopy/spectroscopy,temperature-dependent Raman spectroscopy,and piezoresponse force microscopy,we demonstrate a reversible temperature-induced phase transition between the in-plane ferroelectric β^(*)and antiferroelectric β′phases.Furthermore,we confirm robust out-of-plane ferroelectric polarization in the as-grown films and achieve an electric-field-driven transition from the β^(*)to β′phase.Our findings not only advance the fundamental understanding of phase transitions and polarization evolution in two-dimensional semiconductors but also open new avenues for the design of tunable,non-volatile ferroelectric memory devices.
文摘Metal halide perovskites, as a novel class of semiconductor optoelectronic materials, combine the excellent optoelectronic properties of inorganic semiconductors with the advantages of low-cost, printable fabrication typical of organic semiconductors, making them a cutting-edge research focus in the field of semiconductor optoelectronic devices.
文摘The influence of DBR in resonant cavity on the characteristics of the reflectivity of InGaAs/GaAs MQW SEED arrays has been discussed. InGaAs/GaAs acting as the active region of MQW SEED to gain 980nm work wavelergth has been introduced. A new resonant cavity structure of the InGaAs/GaAs MQW SEED arrays has been designed and analyzed. The MQW materials grown by MOCVD system have also been measured and analyzed with micro optical spot reflection spectra, PL measurement and X ray measurement. The results of measurement prove the good quality of the wafer and the accuracy of our design and analysis of the structure of the device.
文摘This paper reports on the design,fabrication,and performance of an integrated electro-absorptive modulated laser based on butt-joint configuration for 10Gbit/s application.This paper mainly aims at two aspects.One is to improve the optical coupling between the laser and modulator;another is to increase the bandwidth of such devices by reducing the capacitance parameter of the modulator.The integrated devices exhibit high static and dynamic characteristics. Typical threshold current is 15mA,with some value as low as 8mA.Output power at 100mA is more than 10mW.The extinction characteristics,modulation bandwidth,and electrical return loss are measured.3dB bandwidth more than 10GHz is monitored.
文摘<div style="text-align:justify;"> In order to meet the needs of the rapid development of optical fiber communication technology, combined with the thinking of the Internet of Things, a new idea of designing an optical fiber test equipment using Raspberry Pi is proposed. At the same time, the design of a multi-parameter measuring device for optical fiber signals based on Flask was completed. </div>
基金the National Key Research and Development Program of China (2022YFB3803300)the open research fund of Songshan Lake Materials Laboratory (2021SLABFK02)the National Natural Science Foundation of China (21961160720)。
文摘Nowadays, the soar of photovoltaic performance of perovskite solar cells has set off a fever in the study of metal halide perovskite materials. The excellent optoelectronic properties and defect tolerance feature allow metal halide perovskite to be employed in a wide variety of applications. This article provides a holistic review over the current progress and future prospects of metal halide perovskite materials in representative promising applications, including traditional optoelectronic devices(solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices(artificial synapses and memristors) and pressure-induced emission. This review highlights the fundamentals, the current progress and the remaining challenges for each application, aiming to provide a comprehensive overview of the development status and a navigation of future research for metal halide perovskite materials and devices.
