The performances of organic optoelectronic devices, such as organic light emitting diodes and polymer solar cells, have rapidly improved in the past decade. The stability of an organic optoelectronic device has become...The performances of organic optoelectronic devices, such as organic light emitting diodes and polymer solar cells, have rapidly improved in the past decade. The stability of an organic optoelectronic device has become a key problem for further development. In this paper, we report one simple encapsulation method for organic optoelectronic devices with a parafilm, based on ternary polymer solar cells （PSCs）. The power conversion efficiencies （PCE） of PSCs with and without encapsulation decrease from 2.93% to 2.17% and from 2.87% to 1.16% after 168-hours of degradation under an ambient environment, respectively. The stability of PSCs could be enhanced by encapsulation with a parafilm. The encapsulation method is a competitive choice for organic optoelectronic devices, owing to its low cost and compatibility with flexible devices.展开更多
In the high-frequency microwave photonics field,Radio over Fiber(RoF)technology has become a hot topic in the development of next generation broadband wireless communication technologies.In recent years,based on new o...In the high-frequency microwave photonics field,Radio over Fiber(RoF)technology has become a hot topic in the development of next generation broadband wireless communication technologies.In recent years,based on new optoelectronic devices that support RoF technology,several optical generation and receiving techniques of millimeter-wave subcarriers have been developed,including external modulation,radio frequency up-conversion,heterodyning and millimeter-wave modulated optical pulse generator.The development of these technologies will no doubt quicken the pace of commercialization of RoF technology.展开更多
Recent progress of research for graphene applications in electronic and optoelectronic devices is reviewed, and recent developments in circuits based on graphene devices are summarized. The bandgap-mobility tradeoff i...Recent progress of research for graphene applications in electronic and optoelectronic devices is reviewed, and recent developments in circuits based on graphene devices are summarized. The bandgap-mobility tradeoff inevitably constrains the application of graphene for the conventional field-effect transistor （FET） devices in digital applications. However, this shortcoming has not dampened the enthusiasm of the research community toward graphene electronics. Aside from high mobility, graphene offers numerous other amazing electrical, optical, thermal, and mechanical properties that continually motivate innovations.展开更多
Single-molecule devices not only promise to provide an alternative strategy to break through the miniaturization and functionalization bottlenecks faced by traditional semiconductor devices,but also provide a reliable...Single-molecule devices not only promise to provide an alternative strategy to break through the miniaturization and functionalization bottlenecks faced by traditional semiconductor devices,but also provide a reliable platform for exploration of the intrinsic properties of matters at the single-molecule level.Because the regulation of the electrical properties of single-molecule devices will be a key factor in enabling further advances in the development of molecular electronics,it is necessary to clarify the interactions between the charge transport occurring in the device and the external fields,particularly the optical field.This review mainly introduces the optoelectronic effects that are involved in single-molecule devices,including photoisomerization switching,photoconductance,plasmon-induced excitation,photovoltaic effect,and electroluminescence.We also summarize the optoelectronic mechanisms of single-molecule devices,with particular emphasis on the photoisomerization,photoexcitation,and photo-assisted tunneling processes.Finally,we focus the discussion on the opportunities and challenges arising in the single-molecule optoelectronics field and propose further possible breakthroughs.展开更多
Carbon dots(CDs),as an emerging class of zero-dimensional carbon-based nanomaterials,have attracted widespread attention owing to their remarkable optical properties,solution processability,and environmental friendlin...Carbon dots(CDs),as an emerging class of zero-dimensional carbon-based nanomaterials,have attracted widespread attention owing to their remarkable optical properties,solution processability,and environmental friendliness,showing broad application prospects in optoelectronic devices.Nevertheless,although significant research progress has been achieved in recent years,a comprehensive theoretical framework is still absent for clarifying the correlations among the structure,optical properties,and performance of CDs in practical device applications.In this regard,the present review highlights recent developments in utilizing the distinctive optical features of CDs for various optoelectronic systems,including key examples such as photodetectors,optical memristors,lasers,electroluminescent diodes,and photovoltaic cells.Moreover,the current limitations and future research directions for CDs-based optoelectronic technologies are analyzed.The insights provided herein are expected to stimulate further research on enhancing the optical properties of CDs and promoting the rational design of high-performance devices from a new perspective.展开更多
Optoelectronic devices,including light sensors and light-emitting diodes,are indispensable for our daily lives.Lead-based optoelectronic materials,including colloidal quantum dots and lead-halide perovskites,have emer...Optoelectronic devices,including light sensors and light-emitting diodes,are indispensable for our daily lives.Lead-based optoelectronic materials,including colloidal quantum dots and lead-halide perovskites,have emerged as promising candidates for the next-generation optoelectronic devices.This is primarily attributed to their tailorable optoelectronic properties,industrialization-compatible manufacturing techniques,seamless integration with silicon technology and excellent device performance.In this perspective,we review recent advancements in lead-based optoelectronic devices,specifically focusing on photodetectors and active displays.By discussing the current challenges and limitations of lead-based optoelectronics,we find the exciting potential of on-chip,in-situ fabrication methods for realizing high-performance optoelectronic systems.展开更多
Silver bismuth sulfide(AgBiS_(2))has recently attracted increasing attention as a promising environmentally friendly semiconductor for next-generation optoelectronic applications,including photovoltaics and photodetec...Silver bismuth sulfide(AgBiS_(2))has recently attracted increasing attention as a promising environmentally friendly semiconductor for next-generation optoelectronic applications,including photovoltaics and photodetection,due to its favorable energy band structure,strong light absorption,high dielectric constant,and low toxicity.Despite notable advances,research on AgBiS_(2) remains in its early stages,with key challenges related to synthetic control,defect passivation,and device engineering.For example,while the power conversion efficiency of AgBiS_(2)-based solar cells has improved rapidly,the current record efficiency of 10.84%remains far below the theoretical Shockley-Queisser limit(-26%).Similarly,AgBiS_(2)-based photodetectors exhibit detectivities around 10^(12)Jones,lagging behind state-of-the-art materials.This review provides a comprehensive summary of recent advances in the crystal structures,synthetic strategies,optoelectronic properties,and device architectures of AgBiS_(2).We highlight key achievements in solar cells,photodetectors,and thin-film transistors,while critically analyzing the remaining bottlenecks in material synthesis,defect modulation,and charge transport optimization.Finally,the broader application potential of AgBiS_(2) in flexible electronics,infrared imaging,buildingintegrated photovoltaics,photocatalysis,spintronics,and biomedicine is discussed.By offering insights into both current progress and future directions,this review aims to support the development of highperformance,multifunctional AgBiS_(2)-based optoelectronic devices.展开更多
The traditional von Neumann architecture faces inherent limitations due to the separation of memory and computa-tion,leading to high energy consumption,significant latency,and reduced operational efficiency.Neuromorph...The traditional von Neumann architecture faces inherent limitations due to the separation of memory and computa-tion,leading to high energy consumption,significant latency,and reduced operational efficiency.Neuromorphic computing,inspired by the architecture of the human brain,offers a promising alternative by integrating memory and computational func-tions,enabling parallel,high-speed,and energy-efficient information processing.Among various neuromorphic technologies,ion-modulated optoelectronic devices have garnered attention due to their excellent ionic tunability and the availability of multi-dimensional control strategies.This review provides a comprehensive overview of recent progress in ion-modulation optoelec-tronic neuromorphic devices.It elucidates the key mechanisms underlying ionic modulation of light fields,including ion migra-tion dynamics and capture and release of charge through ions.Furthermore,the synthesis of active materials and the proper-ties of these devices are analyzed in detail.The review also highlights the application of ion-modulation optoelectronic devices in artificial vision systems,neuromorphic computing,and other bionic fields.Finally,the existing challenges and future direc-tions for the development of optoelectronic neuromorphic devices are discussed,providing critical insights for advancing this promising field.展开更多
Doping of semiconductors,i.e.,accurately modulating the charge carrier type and concentration in a controllable manner,is a key technology foundation for modern electronics and optoelectronics.However,the conventional...Doping of semiconductors,i.e.,accurately modulating the charge carrier type and concentration in a controllable manner,is a key technology foundation for modern electronics and optoelectronics.However,the conventional doping technologies widely utilized in silicon industry,such as ion implantation and thermal diffusion,always fail when applied to two-dimensional(2D)materials with atomically-thin nature.Surface charge transfer doping(SCTD)is emerging as an effective and non-destructive doping technique to provide reliable doping capability for 2D materials,in particular 2D semiconductors.Herein,we summarize the recent advances and developments on the SCTD of 2D semiconductors and its application in electronic and optoelectronic devices.The underlying mechanism of STCD processes on 2D semiconductors is briefly introduced.Its impact on tuning the fundamental properties of various 2D systems is highlighted.We particularly emphasize on the SCTD-enabled high-performance 2D functional devices.Finally,the challenges and opportunities for the future development of SCTD are discussed.展开更多
The unique physical and chemical properties of metal halide perovskites predestine the devices to achieve high performance in optoelectronic field.Among the numerous high qualities of perovskites,their different low-t...The unique physical and chemical properties of metal halide perovskites predestine the devices to achieve high performance in optoelectronic field.Among the numerous high qualities of perovskites,their different low-temperature synthesis methods and preparation processes make them impressive and popular materials for flexible optoelectronic devices.Mainstream perovskite devices,for instance,solar cells,photodetectors and light-emitting diodes,have been fabricated on flexible substrates and show outstanding flexibility as well as high performance.For soft wearable electronic systems,mechanical flexibility is the premier condition.Compared to common devices based on rigid substrates,flexible perovskite devices are more practical and see widespread applications in energy,detection,display,and other fields.This review summarizes the recent progress of flexible perovskite solar cells,photodetectors and light-emitting diodes.The design and fabrication of different high-performance flexible perovskite devices are introduced.Various low-dimensional perovskite materials and configurations for flexible perovskite devices are presented.In addition,the limitations and challenges for further application are also briefly discussed.展开更多
A 100-Gb/s high-speed optical transmitter is proposed and experimentally demonstrated. Based on frequency-quadrupling technique, two sub-channels with a fixed 50-GHz spacing are obtained from one laser source. Using r...A 100-Gb/s high-speed optical transmitter is proposed and experimentally demonstrated. Based on frequency-quadrupling technique, two sub-channels with a fixed 50-GHz spacing are obtained from one laser source. Using return-to-zero differential quadrature phase-shift keying （RZ-DQPSK） modulation format and polarization multiplexing （PolMux）, only low-speed electronic devices of 12.5 GHz are needed for the 100-Gb/s transmitter. This eliminates the need of ultrahigh-speed optoelectronic devices and thus greatly reduces the cost. The experimental results show that this transmitter can achieve good performance in dispersion tolerance of a 25-km single mode fiber （SMF）.展开更多
Two-dimensional layered transition metal dichalcogenides(TMDCs)have demonstrated a huge potential in the broad fields of optoelectronic devices,logic electronics,electronic integration,as well as neural networks.To ta...Two-dimensional layered transition metal dichalcogenides(TMDCs)have demonstrated a huge potential in the broad fields of optoelectronic devices,logic electronics,electronic integration,as well as neural networks.To take full advantage of TMDC characteristics and efficiently design the device structures,one of the most key processes is to control their p-/n-type modulation.In this review,we summarize the p-/n-type modulation of TMDCs based on diverse strategies consisting of intrinsic defect tailoring,substitutional doping,surface charge transfer,chemical intercalation,electrostatic modulation,and dielectric interface engineering.The modulation mechanisms and comparisons of these strategies are analyzed together with a discussion of their corresponding device applications in electronics and optoelectronics.Finally,challenges and outlooks for p-/n-type modulation of TMDCs are presented to provide references for future studies.展开更多
Rapid developments in artificial intelligence trigger demands for perception and learning of external environments through visual perception systems.Neuromorphic devices and integrated system with photosensing and res...Rapid developments in artificial intelligence trigger demands for perception and learning of external environments through visual perception systems.Neuromorphic devices and integrated system with photosensing and response functions can be constructed to mimic complex biological visual sensing behaviors.Here,recent progresses on optoelectronic neuromorphic memristors and optoelectronic neuromorphic transistors are briefly reviewed.A variety of visual synaptic functions stimulated on optoelectronic neuromorphic devices are discussed,including light-triggered short-term plasticities,long-term plasticities,and neural facilitation.These optoelectronic neuromorphic devices can also mimic human visual perception,information processing,and cognition.The optoelectronic neuromorphic devices that simulate biological visual perception functions will have potential application prospects in areas such as bionic neurological optoelectronic systems and intelligent robots.展开更多
III-nitride materials are of great importance in the development of modern optoelectronics,but they have been limited over years by low light utilization rate and high dislocation densities in heteroepitaxial films gr...III-nitride materials are of great importance in the development of modern optoelectronics,but they have been limited over years by low light utilization rate and high dislocation densities in heteroepitaxial films grown on foreign substrate with limited refractive index contrast and large lattice mismatches.Here,we demonstrate a paradigm of high-throughput manufacturing bioinspired microstructures on warped substrates by flexible nanoimprint lithography for promoting the light extraction capability.We design a flexible nanoimprinting mold of copolymer and a two-step etching process that enable high-efficiency fabrication of nanoimprinted compound-eye-like Al2O3 microstructure(NCAM)and nanoimprinted compound-eye-like SiO_(2)microstructure(NCSM)template,achieving a 6.4-fold increase in throughput and 25%savings in economic costs over stepper projection lithography.Compared to NCAM template,we find that the NCSM template can not only improve the light extraction capability,but also modulate the morphology of AlN nucleation layer and reduce the formation of misoriented GaN grains on the inclined sidewall of microstructures,which suppresses the dislocations generated during coalescence,resulting in 40%reduction in dislocation density.This study provides a low-cost,high-quality,and high-throughput solution for manufacturing microstructures on warped surfaces of III-nitride optoelectronic devices.展开更多
With the unprecedented increasing demand for extremely fast processing speed and huge data capacity,traditional silicon-based information technology is becoming saturated due to the encountered bottle-necks of Moore&#...With the unprecedented increasing demand for extremely fast processing speed and huge data capacity,traditional silicon-based information technology is becoming saturated due to the encountered bottle-necks of Moore's Law.New material systems and new device architectures are considered promising strategies for this challenge.Two-dimensional(2D)materials are layered materials and garnered persistent attention in recent years owing to their advantages in ultrathin body,strong light-matter interaction,flexible integration,and ultrabroad operation wavelength range.To this end,the integra-tion of 2D materials into silicon-based platforms opens a new path for silicon photonic integration.In this work,a comprehensive review is given of the recent signs of progress related to 2D material inte-grated optoelectronic devices and their potential applications in silicon photonics.Firstly,the basic op-tical properties of 2D materials and heterostructures are summarized in the first part.Then,the state-of-the-art three typical 2D optoelectronic devices for silicon photonic applications are reviewed in detail.Finally,the perspective and challenges for the aim of 3D monolithic heterogeneous integration of these 2D optoelectronic devices are discussed.展开更多
Regularly assembled structures of nanowires, such as aligned arrays, junctions and interconnected networks, have great potential for the applications in logical circuits, address decoders, photoelectronic devices and ...Regularly assembled structures of nanowires, such as aligned arrays, junctions and interconnected networks, have great potential for the applications in logical circuits, address decoders, photoelectronic devices and transparent electrodes. However, for now it is still lack of effective approaches for constructing nanowire bifurcated junctions and crosslinked networks with ordered orientations and high quality. Herein, we report the controlled growth of Bi2S3 semiconductor nanowire bifurcated junctions and crosslinked networks with well-aligned directions and high crystalline degree by utilizing the proportional lattice match between nanowires and substrates. Taking advantages of the “tip-to-stem splice” assembly of individual nanowires, the precise orientation alignments of Bi2S3 semiconductor nanowire bifurcated junctions and crosslinked networks were successfully realized. The controlled growth mechanism and structural evolution process have been elucidated by detailed atomic structure characterizations and modeling. The highly crystal quality and direct energy bandgap of as-assembled photodetectors based on individual bismuth sulfide nanowires enabled high photoresponsivity and fast switch time under light illumination. The three-terminal devices based on nanowire bifurcated junctions present rapid carrier transport across the junction. The flexible photodetectors based on nanowire crosslinked networks show very minimal decay of photocurrent after long-term bending test. This work may provide new insights for the guided construction and regular assembly of low-dimensional ordered functional nanostructures towards advanced nanotechnologies.展开更多
Flexible and wearable optoelectronic devices have been developing to a new stage due to their unique capacity for the possibility of a variety of wearable intelligent electronics, including bendable smartphones, folda...Flexible and wearable optoelectronic devices have been developing to a new stage due to their unique capacity for the possibility of a variety of wearable intelligent electronics, including bendable smartphones, foldable touch screens and antennas, paper-like displays, and curved and flexible solid-state lighting devices. Before extensive commercial applications, some issues still have to be solved for flexible and wearable optoelectronic devices. In this regard, this review concludes the newly emerging flexible substrate materials, transparent conductive electrodes, device architectures and light manipulation methods. Examples of these components applied for various kinds of devices are also summarized. Finally, perspectives about the bright future of flexible and wearable electronic devices are proposed.展开更多
This study is focused on calculation of the electronic structure and optical properties of non-metal doped Sb2Se3 using the first-principles method. One and two N atoms are introduced to Sb and Se sites in a Sb2Se3 cr...This study is focused on calculation of the electronic structure and optical properties of non-metal doped Sb2Se3 using the first-principles method. One and two N atoms are introduced to Sb and Se sites in a Sb2Se3 crystal. When one and two N atoms are introduced into the Sb2Se3 lattice at Sb sites, the electronic structure shows that the doping significantly modifies the bandgap of Sb2Se3 from 1.11 eV to 0.787 and 0.685 eV, respectively. When N atoms are introduced to Se sites, the material shows a metallic behavior. The static dielectric constants el（0） for Sb16Se24, SblsN1Se24, Sb14N2Se24, Sb16Se23N1, and Sb16Se22N2 are 14.84, 15.54, 15.02, 18.9, and 39.29, respectively. The calculated values of the refractive index n（0） for Sb16Se24, SblsN1Se24, Sb14N2Se24, Sb16Se23N1, and Sb16Se22N2 are 3.83, 3.92, 3.86, 4.33, and 6.21, respectively. The optical absorbance and optical conductivity curves of the crystal for N-doping at Sb sites show a significant redshift towards the short-wave infrared spectral region as compared to N-doping at Se sites. The modulation of the static refractive index and static dielectric constant is mainly dependent on the doping level. The optical properties and bandgap narrowing effect suggest that the N-doped Sb2Se3is a promising new semiconductor and can be a replacement for GaSb due to its very similar bandgap and low cost.展开更多
Organometallic halide perovskite materials have triggered global attention in recent years due to their exciting and optimistic high performance energy conversion properties(high luminescence efficiency and tremendous...Organometallic halide perovskite materials have triggered global attention in recent years due to their exciting and optimistic high performance energy conversion properties(high luminescence efficiency and tremendous optical absorption ability[1,2]).These interesting photovoltaic properties together make them a promising candidate for high performance optoelectronic展开更多
The traditional von Neumann architecture has demonstrated inefficiencies in parallel computing and adaptive learn-ing,rendering it incapable of meeting the growing demand for efficient and high-speed computing.Neuromo...The traditional von Neumann architecture has demonstrated inefficiencies in parallel computing and adaptive learn-ing,rendering it incapable of meeting the growing demand for efficient and high-speed computing.Neuromorphic comput-ing with significant advantages such as high parallelism and ultra-low power consumption is regarded as a promising pathway to overcome the limitations of conventional computers and achieve the next-generation artificial intelligence.Among various neuromorphic devices,the artificial synapses based on electrolyte-gated transistors stand out due to their low energy consump-tion,multimodal sensing/recording capabilities,and multifunctional integration.Moreover,the emerging optoelectronic neuro-morphic devices which combine the strengths of photonics and electronics have demonstrated substantial potential in the neu-romorphic computing field.Therefore,this article reviews recent advancements in electrolyte-gated optoelectronic neuromor-phic transistors.First,it provides an overview of artificial optoelectronic synapses and neurons,discussing aspects such as device structures,operating mechanisms,and neuromorphic functionalities.Next,the potential applications of optoelectronic synapses in different areas such as artificial visual system,pain system,and tactile perception systems are elaborated.Finally,the current challenges are summarized,and future directions for their developments are proposed.展开更多
基金Project supported by the Fundamental Research Funds for the Central Universities,China(Grant No.2013JBZ004)the National Natural Science Foundation of China(Grant No.61377029)the Beijing Natural Science Foundation,China(Grant No.2122050)
文摘The performances of organic optoelectronic devices, such as organic light emitting diodes and polymer solar cells, have rapidly improved in the past decade. The stability of an organic optoelectronic device has become a key problem for further development. In this paper, we report one simple encapsulation method for organic optoelectronic devices with a parafilm, based on ternary polymer solar cells （PSCs）. The power conversion efficiencies （PCE） of PSCs with and without encapsulation decrease from 2.93% to 2.17% and from 2.87% to 1.16% after 168-hours of degradation under an ambient environment, respectively. The stability of PSCs could be enhanced by encapsulation with a parafilm. The encapsulation method is a competitive choice for organic optoelectronic devices, owing to its low cost and compatibility with flexible devices.
基金supported by the National Natural Science Foundation of China under Grant No.60871067
文摘In the high-frequency microwave photonics field,Radio over Fiber(RoF)technology has become a hot topic in the development of next generation broadband wireless communication technologies.In recent years,based on new optoelectronic devices that support RoF technology,several optical generation and receiving techniques of millimeter-wave subcarriers have been developed,including external modulation,radio frequency up-conversion,heterodyning and millimeter-wave modulated optical pulse generator.The development of these technologies will no doubt quicken the pace of commercialization of RoF technology.
文摘Recent progress of research for graphene applications in electronic and optoelectronic devices is reviewed, and recent developments in circuits based on graphene devices are summarized. The bandgap-mobility tradeoff inevitably constrains the application of graphene for the conventional field-effect transistor （FET） devices in digital applications. However, this shortcoming has not dampened the enthusiasm of the research community toward graphene electronics. Aside from high mobility, graphene offers numerous other amazing electrical, optical, thermal, and mechanical properties that continually motivate innovations.
基金We acknowledge primary financial supports from the National Key R&D Program of China(2017YFA0204901,2021YFA1200101 and 2021YFA1200102)the National Natural Science Foundation of China(22150013,21727806,21933001 and 22173050)+1 种基金the Tencent Foundation through the XPLORER PRIZE“Frontiers Science Center for New Organic Matter”at Nankai University(63181206).
文摘Single-molecule devices not only promise to provide an alternative strategy to break through the miniaturization and functionalization bottlenecks faced by traditional semiconductor devices,but also provide a reliable platform for exploration of the intrinsic properties of matters at the single-molecule level.Because the regulation of the electrical properties of single-molecule devices will be a key factor in enabling further advances in the development of molecular electronics,it is necessary to clarify the interactions between the charge transport occurring in the device and the external fields,particularly the optical field.This review mainly introduces the optoelectronic effects that are involved in single-molecule devices,including photoisomerization switching,photoconductance,plasmon-induced excitation,photovoltaic effect,and electroluminescence.We also summarize the optoelectronic mechanisms of single-molecule devices,with particular emphasis on the photoisomerization,photoexcitation,and photo-assisted tunneling processes.Finally,we focus the discussion on the opportunities and challenges arising in the single-molecule optoelectronics field and propose further possible breakthroughs.
基金supported by the National Natural Science Foundation of China(U24A2079)Anhui Provincial Excellent Scientific Research and Innovation Team(2022AH010062).
文摘Carbon dots(CDs),as an emerging class of zero-dimensional carbon-based nanomaterials,have attracted widespread attention owing to their remarkable optical properties,solution processability,and environmental friendliness,showing broad application prospects in optoelectronic devices.Nevertheless,although significant research progress has been achieved in recent years,a comprehensive theoretical framework is still absent for clarifying the correlations among the structure,optical properties,and performance of CDs in practical device applications.In this regard,the present review highlights recent developments in utilizing the distinctive optical features of CDs for various optoelectronic systems,including key examples such as photodetectors,optical memristors,lasers,electroluminescent diodes,and photovoltaic cells.Moreover,the current limitations and future research directions for CDs-based optoelectronic technologies are analyzed.The insights provided herein are expected to stimulate further research on enhancing the optical properties of CDs and promoting the rational design of high-performance devices from a new perspective.
基金supported by the National Key Research and Development Program of China(Nos.2024YFA1209503 and 2021YFB3501800)the National Natural Science Foundation of China(Grant Nos.62322505 and 62374069)the Innovation Project of Optics Valley Laboratory(No.OVL2023ZD002).
文摘Optoelectronic devices,including light sensors and light-emitting diodes,are indispensable for our daily lives.Lead-based optoelectronic materials,including colloidal quantum dots and lead-halide perovskites,have emerged as promising candidates for the next-generation optoelectronic devices.This is primarily attributed to their tailorable optoelectronic properties,industrialization-compatible manufacturing techniques,seamless integration with silicon technology and excellent device performance.In this perspective,we review recent advancements in lead-based optoelectronic devices,specifically focusing on photodetectors and active displays.By discussing the current challenges and limitations of lead-based optoelectronics,we find the exciting potential of on-chip,in-situ fabrication methods for realizing high-performance optoelectronic systems.
基金financially supported by the National Natural Science Foundation of China(52272179,52503356,52325310,52203208,U24A6003)the National Key R&D Program of China(2021YFB3800101)+7 种基金the Young Elite Scientists Sponsorship Program by CAST(YESS20240571)the China Postdoctoral Science Foundation(2025T180052)the Yunnan Provincial Science and Technology Project at Southwest United Graduate School(202302AO370013)the Beijing Nova Program(20230484480)the R&D Fruit Fund(20210001)the Natural Science Foundation of Jiangsu Province(BK20250977)the Natural Science Research Projects of Jiangsu Higher Education Institutions(25KJB430002)the Changzhou City Leading Innovative Talents Introduction and Cultivation Project(Basic Research Innovation Category)(CQ20240103)。
文摘Silver bismuth sulfide(AgBiS_(2))has recently attracted increasing attention as a promising environmentally friendly semiconductor for next-generation optoelectronic applications,including photovoltaics and photodetection,due to its favorable energy band structure,strong light absorption,high dielectric constant,and low toxicity.Despite notable advances,research on AgBiS_(2) remains in its early stages,with key challenges related to synthetic control,defect passivation,and device engineering.For example,while the power conversion efficiency of AgBiS_(2)-based solar cells has improved rapidly,the current record efficiency of 10.84%remains far below the theoretical Shockley-Queisser limit(-26%).Similarly,AgBiS_(2)-based photodetectors exhibit detectivities around 10^(12)Jones,lagging behind state-of-the-art materials.This review provides a comprehensive summary of recent advances in the crystal structures,synthetic strategies,optoelectronic properties,and device architectures of AgBiS_(2).We highlight key achievements in solar cells,photodetectors,and thin-film transistors,while critically analyzing the remaining bottlenecks in material synthesis,defect modulation,and charge transport optimization.Finally,the broader application potential of AgBiS_(2) in flexible electronics,infrared imaging,buildingintegrated photovoltaics,photocatalysis,spintronics,and biomedicine is discussed.By offering insights into both current progress and future directions,this review aims to support the development of highperformance,multifunctional AgBiS_(2)-based optoelectronic devices.
基金supported by National Natural Science Foundation of China(62174164,U23A20568,and U22A2075)National Key Research and Development Project(2021YFA1202600)+2 种基金Talent Plan of Shanghai Branch,Chinese Academy of Sciences(CASSHB-QNPD-2023-022)Ningbo Technology Project(2022A-007-C)Ningbo Key Research and Development Project(2023Z021).
文摘The traditional von Neumann architecture faces inherent limitations due to the separation of memory and computa-tion,leading to high energy consumption,significant latency,and reduced operational efficiency.Neuromorphic computing,inspired by the architecture of the human brain,offers a promising alternative by integrating memory and computational func-tions,enabling parallel,high-speed,and energy-efficient information processing.Among various neuromorphic technologies,ion-modulated optoelectronic devices have garnered attention due to their excellent ionic tunability and the availability of multi-dimensional control strategies.This review provides a comprehensive overview of recent progress in ion-modulation optoelec-tronic neuromorphic devices.It elucidates the key mechanisms underlying ionic modulation of light fields,including ion migra-tion dynamics and capture and release of charge through ions.Furthermore,the synthesis of active materials and the proper-ties of these devices are analyzed in detail.The review also highlights the application of ion-modulation optoelectronic devices in artificial vision systems,neuromorphic computing,and other bionic fields.Finally,the existing challenges and future direc-tions for the development of optoelectronic neuromorphic devices are discussed,providing critical insights for advancing this promising field.
基金the financial support from Natural Science Foundation of Jiangsu Province(No.BK20170005)the National Natural Science Foundation of China(No.21872100)+1 种基金Singapore MOE Grants MOE2019-T2-1-002 and R143-000-A43-114,Fundamental Research Foundation of Shenzhen(Nos.JCYJ20190808152607389 and JCYJ20170817100405375)Shenzhen Peacock Plan(No.KQTD2016053112042971).
文摘Doping of semiconductors,i.e.,accurately modulating the charge carrier type and concentration in a controllable manner,is a key technology foundation for modern electronics and optoelectronics.However,the conventional doping technologies widely utilized in silicon industry,such as ion implantation and thermal diffusion,always fail when applied to two-dimensional(2D)materials with atomically-thin nature.Surface charge transfer doping(SCTD)is emerging as an effective and non-destructive doping technique to provide reliable doping capability for 2D materials,in particular 2D semiconductors.Herein,we summarize the recent advances and developments on the SCTD of 2D semiconductors and its application in electronic and optoelectronic devices.The underlying mechanism of STCD processes on 2D semiconductors is briefly introduced.Its impact on tuning the fundamental properties of various 2D systems is highlighted.We particularly emphasize on the SCTD-enabled high-performance 2D functional devices.Finally,the challenges and opportunities for the future development of SCTD are discussed.
基金This work was supported by the National Natural Science Foundation of China(Nos.61874150 and 61974014)the Sichuan Key Project for Applied Fundamental Research(No.20YYJC4341)+1 种基金the Key Laboratory Foundation of Chinese Academy of Sciences(No.2019LBC)This work was also partially supported by UESTC Shared Research Facilities of Electromagnetic Wave and Matter Interaction(No.Y0301901290100201).
文摘The unique physical and chemical properties of metal halide perovskites predestine the devices to achieve high performance in optoelectronic field.Among the numerous high qualities of perovskites,their different low-temperature synthesis methods and preparation processes make them impressive and popular materials for flexible optoelectronic devices.Mainstream perovskite devices,for instance,solar cells,photodetectors and light-emitting diodes,have been fabricated on flexible substrates and show outstanding flexibility as well as high performance.For soft wearable electronic systems,mechanical flexibility is the premier condition.Compared to common devices based on rigid substrates,flexible perovskite devices are more practical and see widespread applications in energy,detection,display,and other fields.This review summarizes the recent progress of flexible perovskite solar cells,photodetectors and light-emitting diodes.The design and fabrication of different high-performance flexible perovskite devices are introduced.Various low-dimensional perovskite materials and configurations for flexible perovskite devices are presented.In addition,the limitations and challenges for further application are also briefly discussed.
基金the"863"Program of China under Grant No.2006AA01Z255.
文摘A 100-Gb/s high-speed optical transmitter is proposed and experimentally demonstrated. Based on frequency-quadrupling technique, two sub-channels with a fixed 50-GHz spacing are obtained from one laser source. Using return-to-zero differential quadrature phase-shift keying （RZ-DQPSK） modulation format and polarization multiplexing （PolMux）, only low-speed electronic devices of 12.5 GHz are needed for the 100-Gb/s transmitter. This eliminates the need of ultrahigh-speed optoelectronic devices and thus greatly reduces the cost. The experimental results show that this transmitter can achieve good performance in dispersion tolerance of a 25-km single mode fiber （SMF）.
基金supported by the National Science Foundation of China(Nos.61922005 and U1930105)the Beijing Municipal Natural Science Foundation(No.JQ20027)the Fundamental Research Funds for the Central Universities(No.048000546320504).
文摘Two-dimensional layered transition metal dichalcogenides(TMDCs)have demonstrated a huge potential in the broad fields of optoelectronic devices,logic electronics,electronic integration,as well as neural networks.To take full advantage of TMDC characteristics and efficiently design the device structures,one of the most key processes is to control their p-/n-type modulation.In this review,we summarize the p-/n-type modulation of TMDCs based on diverse strategies consisting of intrinsic defect tailoring,substitutional doping,surface charge transfer,chemical intercalation,electrostatic modulation,and dielectric interface engineering.The modulation mechanisms and comparisons of these strategies are analyzed together with a discussion of their corresponding device applications in electronics and optoelectronics.Finally,challenges and outlooks for p-/n-type modulation of TMDCs are presented to provide references for future studies.
基金Project supported by the National Natural Science Foundation of China(Grant No.51972316)Open Project of State Key Laboratory of ASIC&System(Grant No.2019KF006)+1 种基金Zhejiang Provincial Natural Science Foundation of China(Grant No.LR18F040002)Program for Ningbo Municipal Science and Technology Innovative Research Team,China(Grant No.2016B10005).
文摘Rapid developments in artificial intelligence trigger demands for perception and learning of external environments through visual perception systems.Neuromorphic devices and integrated system with photosensing and response functions can be constructed to mimic complex biological visual sensing behaviors.Here,recent progresses on optoelectronic neuromorphic memristors and optoelectronic neuromorphic transistors are briefly reviewed.A variety of visual synaptic functions stimulated on optoelectronic neuromorphic devices are discussed,including light-triggered short-term plasticities,long-term plasticities,and neural facilitation.These optoelectronic neuromorphic devices can also mimic human visual perception,information processing,and cognition.The optoelectronic neuromorphic devices that simulate biological visual perception functions will have potential application prospects in areas such as bionic neurological optoelectronic systems and intelligent robots.
基金supported by the National Natural Science Foundation of China(52075394)the National Key R&D Program of China(2022YFB3603603 and 2021YFB3600204)+1 种基金the Key Research and Development Program of Hubei Province(2023BAB137)the Knowledge Innovation Program of Wuhan-Basic Research,the National Youth Talent Support Program,and the Fundamental Research Funds for the Central Universities.
文摘III-nitride materials are of great importance in the development of modern optoelectronics,but they have been limited over years by low light utilization rate and high dislocation densities in heteroepitaxial films grown on foreign substrate with limited refractive index contrast and large lattice mismatches.Here,we demonstrate a paradigm of high-throughput manufacturing bioinspired microstructures on warped substrates by flexible nanoimprint lithography for promoting the light extraction capability.We design a flexible nanoimprinting mold of copolymer and a two-step etching process that enable high-efficiency fabrication of nanoimprinted compound-eye-like Al2O3 microstructure(NCAM)and nanoimprinted compound-eye-like SiO_(2)microstructure(NCSM)template,achieving a 6.4-fold increase in throughput and 25%savings in economic costs over stepper projection lithography.Compared to NCAM template,we find that the NCSM template can not only improve the light extraction capability,but also modulate the morphology of AlN nucleation layer and reduce the formation of misoriented GaN grains on the inclined sidewall of microstructures,which suppresses the dislocations generated during coalescence,resulting in 40%reduction in dislocation density.This study provides a low-cost,high-quality,and high-throughput solution for manufacturing microstructures on warped surfaces of III-nitride optoelectronic devices.
基金supported by the National Natural Science Foundation of China(Nos.52221001,U19A2090,62090035,52172140,51902098,62175061)the Key Program of the Hunan Provincial Science and Technology Department(Nos.2019XK2001,2020XK2001)+3 种基金the International Science and Technology Innovation Cooperation Base of Hunan Province(No.2018WK4004)the Outstanding Scholarship Program of Hunan Province(No.2021JJ10021)the Science and Technology Innovation Program of Hunan Province(No.2021RC3061)the Natural Science Foundation of Hunan Province(Nos.2022JJ30167,2021JJ20016).
文摘With the unprecedented increasing demand for extremely fast processing speed and huge data capacity,traditional silicon-based information technology is becoming saturated due to the encountered bottle-necks of Moore's Law.New material systems and new device architectures are considered promising strategies for this challenge.Two-dimensional(2D)materials are layered materials and garnered persistent attention in recent years owing to their advantages in ultrathin body,strong light-matter interaction,flexible integration,and ultrabroad operation wavelength range.To this end,the integra-tion of 2D materials into silicon-based platforms opens a new path for silicon photonic integration.In this work,a comprehensive review is given of the recent signs of progress related to 2D material inte-grated optoelectronic devices and their potential applications in silicon photonics.Firstly,the basic op-tical properties of 2D materials and heterostructures are summarized in the first part.Then,the state-of-the-art three typical 2D optoelectronic devices for silicon photonic applications are reviewed in detail.Finally,the perspective and challenges for the aim of 3D monolithic heterogeneous integration of these 2D optoelectronic devices are discussed.
基金This work was supported by the National Key R&D Program(Nos.2017YFA0208200 and 2016YFB0700600)the Fundamental Research Funds for the Central Universities(No.0205-14380219)+2 种基金the Projects of the National Natural Science Foundation of China(NSFC)(Nos.21872069,51761135104,and 21573108)the Natural Science Foundation of Jiangsu Province(No.BK20180008)the High-Level Innovation and Entrepreneurship Project of Jiangsu Province of China.
文摘Regularly assembled structures of nanowires, such as aligned arrays, junctions and interconnected networks, have great potential for the applications in logical circuits, address decoders, photoelectronic devices and transparent electrodes. However, for now it is still lack of effective approaches for constructing nanowire bifurcated junctions and crosslinked networks with ordered orientations and high quality. Herein, we report the controlled growth of Bi2S3 semiconductor nanowire bifurcated junctions and crosslinked networks with well-aligned directions and high crystalline degree by utilizing the proportional lattice match between nanowires and substrates. Taking advantages of the “tip-to-stem splice” assembly of individual nanowires, the precise orientation alignments of Bi2S3 semiconductor nanowire bifurcated junctions and crosslinked networks were successfully realized. The controlled growth mechanism and structural evolution process have been elucidated by detailed atomic structure characterizations and modeling. The highly crystal quality and direct energy bandgap of as-assembled photodetectors based on individual bismuth sulfide nanowires enabled high photoresponsivity and fast switch time under light illumination. The three-terminal devices based on nanowire bifurcated junctions present rapid carrier transport across the junction. The flexible photodetectors based on nanowire crosslinked networks show very minimal decay of photocurrent after long-term bending test. This work may provide new insights for the guided construction and regular assembly of low-dimensional ordered functional nanostructures towards advanced nanotechnologies.
基金supported by the Ministry of Science and Technology of China(No.2016YFB0400700)
文摘Flexible and wearable optoelectronic devices have been developing to a new stage due to their unique capacity for the possibility of a variety of wearable intelligent electronics, including bendable smartphones, foldable touch screens and antennas, paper-like displays, and curved and flexible solid-state lighting devices. Before extensive commercial applications, some issues still have to be solved for flexible and wearable optoelectronic devices. In this regard, this review concludes the newly emerging flexible substrate materials, transparent conductive electrodes, device architectures and light manipulation methods. Examples of these components applied for various kinds of devices are also summarized. Finally, perspectives about the bright future of flexible and wearable electronic devices are proposed.
基金This work was supported in part by the National Natural Science Foundation of China （Grant No. 61675195） and Sponsored by CAS-TWAS President＇s Fellow-ship for international PhD. Students, PSF project No. PSF/NSFC/ Eng-P-UoL （02）. F. K. Butt acknowledges the funding from Alexander von Humboldt Foundation and Federal Ministry for Education and Research （BMBF）, Germany. The author （Bakhtiar U1 Haq） would like to express his gratitude to Research Center of Advanced Materials - King Khalid University, Saudi Arabia for support.
文摘This study is focused on calculation of the electronic structure and optical properties of non-metal doped Sb2Se3 using the first-principles method. One and two N atoms are introduced to Sb and Se sites in a Sb2Se3 crystal. When one and two N atoms are introduced into the Sb2Se3 lattice at Sb sites, the electronic structure shows that the doping significantly modifies the bandgap of Sb2Se3 from 1.11 eV to 0.787 and 0.685 eV, respectively. When N atoms are introduced to Se sites, the material shows a metallic behavior. The static dielectric constants el（0） for Sb16Se24, SblsN1Se24, Sb14N2Se24, Sb16Se23N1, and Sb16Se22N2 are 14.84, 15.54, 15.02, 18.9, and 39.29, respectively. The calculated values of the refractive index n（0） for Sb16Se24, SblsN1Se24, Sb14N2Se24, Sb16Se23N1, and Sb16Se22N2 are 3.83, 3.92, 3.86, 4.33, and 6.21, respectively. The optical absorbance and optical conductivity curves of the crystal for N-doping at Sb sites show a significant redshift towards the short-wave infrared spectral region as compared to N-doping at Se sites. The modulation of the static refractive index and static dielectric constant is mainly dependent on the doping level. The optical properties and bandgap narrowing effect suggest that the N-doped Sb2Se3is a promising new semiconductor and can be a replacement for GaSb due to its very similar bandgap and low cost.
文摘Organometallic halide perovskite materials have triggered global attention in recent years due to their exciting and optimistic high performance energy conversion properties(high luminescence efficiency and tremendous optical absorption ability[1,2]).These interesting photovoltaic properties together make them a promising candidate for high performance optoelectronic
基金supported by the Hunan Science Fund for Distinguished Young Scholars(2023JJ10069)the National Natural Science Foundation of China(52172169)the Project of State Key Laboratory of Precision Manufacturing for Extreme Service Performance,Central South University(ZZYJKT2024-02).
文摘The traditional von Neumann architecture has demonstrated inefficiencies in parallel computing and adaptive learn-ing,rendering it incapable of meeting the growing demand for efficient and high-speed computing.Neuromorphic comput-ing with significant advantages such as high parallelism and ultra-low power consumption is regarded as a promising pathway to overcome the limitations of conventional computers and achieve the next-generation artificial intelligence.Among various neuromorphic devices,the artificial synapses based on electrolyte-gated transistors stand out due to their low energy consump-tion,multimodal sensing/recording capabilities,and multifunctional integration.Moreover,the emerging optoelectronic neuro-morphic devices which combine the strengths of photonics and electronics have demonstrated substantial potential in the neu-romorphic computing field.Therefore,this article reviews recent advancements in electrolyte-gated optoelectronic neuromor-phic transistors.First,it provides an overview of artificial optoelectronic synapses and neurons,discussing aspects such as device structures,operating mechanisms,and neuromorphic functionalities.Next,the potential applications of optoelectronic synapses in different areas such as artificial visual system,pain system,and tactile perception systems are elaborated.Finally,the current challenges are summarized,and future directions for their developments are proposed.
