The features of optical defects in a chemical vapor deposition (CVD) synthetic type Ⅱ a diamond were characterized using photoluminescence (PL) spectroscopy, before and after electron irradiation. The sample was cut ...The features of optical defects in a chemical vapor deposition (CVD) synthetic type Ⅱ a diamond were characterized using photoluminescence (PL) spectroscopy, before and after electron irradiation. The sample was cut within a {100} growth layer, and irradiated with 2 MeV electrons along the <100> axis. PL spectra of sample were collected under 532 nm and 355 nm laser excitation, at room temperature and 77 K, and linear scanning analysis along incident depth was applied to determine the distribution of defects. The pre-irradiation characterization results revealed uniformly distributed PL centers at 389 nm, 469 nm, 533 nm, 575 nm (ZPL of NV 0), 637 nm (ZPL of NV -), and 736.7/737.1 nm (ZPL doublet of SiV -). After irradiation, the differential responses of these as-grown defects were observed, alongside the emergence of irradiation-induced defects, namely 489 nm center, H3 center (ZPL at 504 nm) and GR1 center (ZPL at 741 nm). The maximum penetration depth of 2 MeV electron-irradiation induced defects was determined to be 2.1 mm. This work primarily presents the depth profiles of both as-grown and irradiation-induced defects in 2 MeV electrons irradiated diamond. The result provides experimental data for better understanding of the radiation effect in diamonds. Serving as a reference for diamond enhancement by electron irradiation.展开更多
The growing demand for electronic devices, smart devices, and the Internet of Things constitutes the primary driving force for marching down the path of decreased critical dimension and increased circuit intricacy of ...The growing demand for electronic devices, smart devices, and the Internet of Things constitutes the primary driving force for marching down the path of decreased critical dimension and increased circuit intricacy of integrated circuits. However, as sub-10 nm high-volume manufacturing is becoming the mainstream, there is greater awareness that defects introduced by original equipment manufacturer components impact yield and manufacturing costs. The identification, positioning, and classification of these defects, including random particles and systematic defects, are becoming more and more challenging at the 10 nm node and beyond.Very recently, the combination of conventional optical defect inspection with emerging techniques such as nanophotonics, optical vortices, computational imaging, quantitative phase imaging, and deep learning is giving the field a new possibility. Hence, it is extremely necessary to make a thorough review for disclosing new perspectives and exciting trends, on the foundation of former great reviews in the field of defect inspection methods. In this article, we give a comprehensive review of the emerging topics in the past decade with a focus on three specific areas:(a) the defect detectability evaluation,(b) the diverse optical inspection systems,and(c) the post-processing algorithms. We hope, this work can be of importance to both new entrants in the field and people who are seeking to use it in interdisciplinary work.展开更多
S-doped and Al-doped GaSe crystals are promising materials for their applications in nonlinear frequency conversion devices. The optical and defect properties of pure, S-doped, and Al-doped GaSe crystals were studied ...S-doped and Al-doped GaSe crystals are promising materials for their applications in nonlinear frequency conversion devices. The optical and defect properties of pure, S-doped, and Al-doped GaSe crystals were studied by using photoluminescence（PL） and Fourier transform infrared spectroscopy（FT-IR）. The micro-topography of（0001） face of these samples was observed by using scanning electron microscope（SEM） to investigate the influence of the doped defects on the intralayer and interlayer chemical bondings. The doped S or Al atoms form the SSe^0 or AlGa^＋1） substitutional defects in the layer GaSe structure, and the positive center of AlGa-^＋1 could induce defect complexes. The incorporations of S and Al atoms can change the optical and mechanical properties of the GaSe crystal by influencing the chemical bonding of the layer structure. The study results may provide guidance for the crystal growth and further applications of S-doped and Al-doped GaSe crystals.展开更多
A Yb_（0.11）Gd_（0.89）Ca_4O（BO_3）_3 crystal with new composition was grown by the Czochralski method. The crystal structure was measured and analyzed. The unit-cell parameters of the Yb_（0.11）Gd_（0.89）COB were...A Yb_（0.11）Gd_（0.89）Ca_4O（BO_3）_3 crystal with new composition was grown by the Czochralski method. The crystal structure was measured and analyzed. The unit-cell parameters of the Yb_（0.11）Gd_（0.89）COB were calculated to be a=0.8089（7） nm, b=1.5987（6） nm, c=0.3545（8） nm, β=101.22o. The absorption and fluorescence spectra were measured. The maximum absorption cross-section of Yb_（0.11）Gd_（0.89） COB crystal was 0.79×10^（–20）cm^2, which occurred at 976 nm with Y polarization. The emission cross-section at 1027 nm was calculated to be 0.33×10^（–20） cm^2. The radiative lifetime trad was calculated to be 2.74 ms. The Stark energy-level diagram of Yb^（3＋）in the Yb_（0.11）Gd_（0.89）COB crystal field at room temperature was determined. The ground-state energy level ~2F_（7/2） splitting was calculated to be as large as 1004 cm^（–1） and the zero-line energy was 10246 cm^（–1）. A maximum output power of 9.35 W was achieved in continuous-wave（CW） mode, with the slope efficiency being 42.1%. Chemical etching experiment revealed that the dominating imperfections in the studied Yb_（0.11）Gd_（0.89） COB crystal were dislocations and sub-grain boundaries. The existence of crystal defects could cause light scattering, and degrade laser output efficiency. The influence of crystal defects on laser properties was discussed.展开更多
As the era of nanoelectronics is dawning,CNT（carbon nanotube）,a one-dimensional nano material with outstanding properties and performances,has aroused wide attention.In order to study its optical and electrical prop...As the era of nanoelectronics is dawning,CNT（carbon nanotube）,a one-dimensional nano material with outstanding properties and performances,has aroused wide attention.In order to study its optical and electrical properties,this paper has researched the influence of tension-twisting deformation,defects,and mixed type on the electronic structure and optical properties of the armchair carbon nanotube superlattices doped cyclic alternately with B and N by using the first-principle method.Our findings show that if tension-twisting deformation is conducted,then the geometric structure,bond length,binding energy,band gap and optical properties of B,N doped carbon nanotube superlattices with defects and mixed type will be influenced.As the degree of exerted tension-twisting deformation increases,B,N doped carbon nanotube superlattices become less stable,and B,N doped carbon nanotube superlattices with defects are more stable than that with exerted tension-twisting deformations.Proper tension-twisting deformation can adjust the energy gap of the system;defects can only reduce the energy gap,enhancing the system metallicity;while the mixed type of 5%tension,twisting angle of 15° and atomic defects will significantly increase the energy gap of the system.From the perspective of optical properties,doped carbon nanotubes may transform the system from metallicity into semi-conductivity.展开更多
基金This work is supported by National Natural Science Foundation of China(No.42372054)。
文摘The features of optical defects in a chemical vapor deposition (CVD) synthetic type Ⅱ a diamond were characterized using photoluminescence (PL) spectroscopy, before and after electron irradiation. The sample was cut within a {100} growth layer, and irradiated with 2 MeV electrons along the <100> axis. PL spectra of sample were collected under 532 nm and 355 nm laser excitation, at room temperature and 77 K, and linear scanning analysis along incident depth was applied to determine the distribution of defects. The pre-irradiation characterization results revealed uniformly distributed PL centers at 389 nm, 469 nm, 533 nm, 575 nm (ZPL of NV 0), 637 nm (ZPL of NV -), and 736.7/737.1 nm (ZPL doublet of SiV -). After irradiation, the differential responses of these as-grown defects were observed, alongside the emergence of irradiation-induced defects, namely 489 nm center, H3 center (ZPL at 504 nm) and GR1 center (ZPL at 741 nm). The maximum penetration depth of 2 MeV electron-irradiation induced defects was determined to be 2.1 mm. This work primarily presents the depth profiles of both as-grown and irradiation-induced defects in 2 MeV electrons irradiated diamond. The result provides experimental data for better understanding of the radiation effect in diamonds. Serving as a reference for diamond enhancement by electron irradiation.
基金funded by the National Natural Science Foundation of China(Grant Nos.52175509 and 52130504)the National Key Research and Development Program of China(2017YFF0204705)+1 种基金the Key Research and Development Plan of Hubei Province(2021BAA013)the National Science and Technology Major Project(2017ZX02101006-004)。
文摘The growing demand for electronic devices, smart devices, and the Internet of Things constitutes the primary driving force for marching down the path of decreased critical dimension and increased circuit intricacy of integrated circuits. However, as sub-10 nm high-volume manufacturing is becoming the mainstream, there is greater awareness that defects introduced by original equipment manufacturer components impact yield and manufacturing costs. The identification, positioning, and classification of these defects, including random particles and systematic defects, are becoming more and more challenging at the 10 nm node and beyond.Very recently, the combination of conventional optical defect inspection with emerging techniques such as nanophotonics, optical vortices, computational imaging, quantitative phase imaging, and deep learning is giving the field a new possibility. Hence, it is extremely necessary to make a thorough review for disclosing new perspectives and exciting trends, on the foundation of former great reviews in the field of defect inspection methods. In this article, we give a comprehensive review of the emerging topics in the past decade with a focus on three specific areas:(a) the defect detectability evaluation,(b) the diverse optical inspection systems,and(c) the post-processing algorithms. We hope, this work can be of importance to both new entrants in the field and people who are seeking to use it in interdisciplinary work.
基金Project supported by Knowledge Innovation Program of the Chinese Academy of Sciences(Grant No.CXJJ-16M128)
文摘S-doped and Al-doped GaSe crystals are promising materials for their applications in nonlinear frequency conversion devices. The optical and defect properties of pure, S-doped, and Al-doped GaSe crystals were studied by using photoluminescence（PL） and Fourier transform infrared spectroscopy（FT-IR）. The micro-topography of（0001） face of these samples was observed by using scanning electron microscope（SEM） to investigate the influence of the doped defects on the intralayer and interlayer chemical bondings. The doped S or Al atoms form the SSe^0 or AlGa^＋1） substitutional defects in the layer GaSe structure, and the positive center of AlGa-^＋1 could induce defect complexes. The incorporations of S and Al atoms can change the optical and mechanical properties of the GaSe crystal by influencing the chemical bonding of the layer structure. The study results may provide guidance for the crystal growth and further applications of S-doped and Al-doped GaSe crystals.
基金Project supported by National Natural Science Foundation of China(11204148,11374170)Taishan Scholar Program of Shandong Province+2 种基金Open Project of State Key Laboratory of Rare Earth Resource Utilization(RERU2016015)the Applied Basic Research Programs for Youths of Qingdao(15-9-1-52-JCH)Qingdao Postdoctoral Application Research Project(2015127)
文摘A Yb_（0.11）Gd_（0.89）Ca_4O（BO_3）_3 crystal with new composition was grown by the Czochralski method. The crystal structure was measured and analyzed. The unit-cell parameters of the Yb_（0.11）Gd_（0.89）COB were calculated to be a=0.8089（7） nm, b=1.5987（6） nm, c=0.3545（8） nm, β=101.22o. The absorption and fluorescence spectra were measured. The maximum absorption cross-section of Yb_（0.11）Gd_（0.89） COB crystal was 0.79×10^（–20）cm^2, which occurred at 976 nm with Y polarization. The emission cross-section at 1027 nm was calculated to be 0.33×10^（–20） cm^2. The radiative lifetime trad was calculated to be 2.74 ms. The Stark energy-level diagram of Yb^（3＋）in the Yb_（0.11）Gd_（0.89）COB crystal field at room temperature was determined. The ground-state energy level ~2F_（7/2） splitting was calculated to be as large as 1004 cm^（–1） and the zero-line energy was 10246 cm^（–1）. A maximum output power of 9.35 W was achieved in continuous-wave（CW） mode, with the slope efficiency being 42.1%. Chemical etching experiment revealed that the dominating imperfections in the studied Yb_（0.11）Gd_（0.89） COB crystal were dislocations and sub-grain boundaries. The existence of crystal defects could cause light scattering, and degrade laser output efficiency. The influence of crystal defects on laser properties was discussed.
基金supported by the National Natural Science Foundation of China(No.51371049)the Natural Science Foundation of Liaoning Province(No.20102173)
文摘As the era of nanoelectronics is dawning,CNT（carbon nanotube）,a one-dimensional nano material with outstanding properties and performances,has aroused wide attention.In order to study its optical and electrical properties,this paper has researched the influence of tension-twisting deformation,defects,and mixed type on the electronic structure and optical properties of the armchair carbon nanotube superlattices doped cyclic alternately with B and N by using the first-principle method.Our findings show that if tension-twisting deformation is conducted,then the geometric structure,bond length,binding energy,band gap and optical properties of B,N doped carbon nanotube superlattices with defects and mixed type will be influenced.As the degree of exerted tension-twisting deformation increases,B,N doped carbon nanotube superlattices become less stable,and B,N doped carbon nanotube superlattices with defects are more stable than that with exerted tension-twisting deformations.Proper tension-twisting deformation can adjust the energy gap of the system;defects can only reduce the energy gap,enhancing the system metallicity;while the mixed type of 5%tension,twisting angle of 15° and atomic defects will significantly increase the energy gap of the system.From the perspective of optical properties,doped carbon nanotubes may transform the system from metallicity into semi-conductivity.
