The current research of state of charge(SoC) online estimation of lithium-ion battery(LiB) in electric vehicles(EVs)mainly focuses on adopting or improving of battery models and estimation filters. However, little att...The current research of state of charge(SoC) online estimation of lithium-ion battery(LiB) in electric vehicles(EVs)mainly focuses on adopting or improving of battery models and estimation filters. However, little attention has been paid to the accuracy of various open circuit voltage(OCV) models for correcting the SoC with aid of the ampere-hour counting method. This paper presents a comprehensive comparison study on eighteen OCV models which cover the majority of models used in literature. The low-current OCV tests are conducted on the typical commercial LiFePO/graphite(LFP) and LiNiMnCoO/graphite(NMC) cells to obtain the experimental OCV-SoC curves at different ambient temperature and aging stages. With selected OCV and SoC points from experimental OCV-SoC curves, the parameters of each OCV model are determined by curve fitting toolbox of MATLAB 2013. Then the fitting OCV-SoC curves based on diversified OCV models are also obtained. The indicator of root-mean-square error(RMSE) between the experimental data and fitted data is selected to evaluate the adaptabilities of these OCV models for their main features, advantages,and limitations. The sensitivities of OCV models to ambient temperatures, aging stages, numbers of data points,and SoC regions are studied for both NMC and LFP cells. Furthermore, the influences of these models on SoC estimation are discussed. Through a comprehensive comparison and analysis on OCV models, some recommendations in selecting OCV models for both NMC and LFP cells are given.展开更多
The effect of the valence band tail width on the open circuit voltage of P3HT：PCBM bulk heterojunction solar cell is investigated by using the AMPS-1D computer program. An effective medium model with exponential vale...The effect of the valence band tail width on the open circuit voltage of P3HT：PCBM bulk heterojunction solar cell is investigated by using the AMPS-1D computer program. An effective medium model with exponential valence and conduction band tail states is used to simulate the photovoltaic cell. The simulation result shows that the open circuit voltage depends Iinearly on the logarithm of the generation rate and the slope depends on the width of the valence band tail. The open circuit voltage decreases with the increasing width of the band tail. The dark and light ideality factors increase with the width of the valence band tail.展开更多
The objective of this study is to find an effective method to improve Voc without Jsc loss for Cu2ZnSnSe4 （CZTSe） thin film solar cells, which have been fabricated by the one step co-evaporation technique. Surface s...The objective of this study is to find an effective method to improve Voc without Jsc loss for Cu2ZnSnSe4 （CZTSe） thin film solar cells, which have been fabricated by the one step co-evaporation technique. Surface sulfurization of CZTSe thin films is carried out by using one technique that does not utilize toxic H2S gas; a sequential evaporation of SnS after CZTSe deposition and the annealing of CZTSe thin films in selenium vapor. A Cu2ZnSn（S, Se）4 （CZTSSe） thin layer is grown on the surface of the CZTSe thin film after the annealing. The conversion efficiency of the completed device is improved due to the enhancement of Voc, which could be attributed to the formation of a hole-recombination barrier at the surface or the passivation of the surface and grain boundary by S incorporation.展开更多
<span style="font-family:Verdana;">This manuscript presents a simple method for excess minority carriers’ lifetime measurement</span><span style="font-family:""> </span&g...<span style="font-family:Verdana;">This manuscript presents a simple method for excess minority carriers’ lifetime measurement</span><span style="font-family:""> </span><span style="font-family:""><span style="font-family:Verdana;">within the base region of p-n junction polycrystalline solar </span><span style="font-family:Verdana;">cell</span></span><span style="font-family:""> </span><span style="font-family:Verdana;">in transient mode.</span><span style="font-family:""> </span><span style="font-family:Verdana;">This work is an experimental transient</span><span style="font-family:Verdana;"> 3-Dimensionnal study.</span><span style="font-family:""> </span><span style="font-family:Verdana;">The magnitude of the magnetic field B is varied from 0 mT to 0.045 mT. Indeed, the solar cell is illuminated by a stroboscopic flash with air mass 1.5</span><span style="font-family:""> </span><span style="font-family:Verdana;">and under magnetic field in transient state.</span><span style="font-family:""> </span><span style="font-family:Verdana;">The experimental details are assumed in a figure. The procedure is outlined by the Open Circuit Voltage Decay analysis. Effective minority carrier life-time is calculated by fitting the linear zone of the transient voltage decay curve</span><span style="font-family:""> </span><span style="font-family:Verdana;">because linear decay is an ideal decay. The kaleidagraph software permits access to the slope of the curve which is inversely proportional to the</span><span style="font-family:""> </span><span style="font-family:Verdana;">lifetime. The external magnetic effects</span><span style="font-family:""> </span><span style="font-family:Verdana;">on minority carriers’ effective lifetime </span><span style="font-family:Verdana;">is</span><span style="font-family:Verdana;"> then</span><span style="font-family:""> </span><span style="font-family:Verdana;">presented and analyzed.</span><span style="font-family:""> </span><span style="font-family:Verdana;">The analysis show</span><span style="font-family:Verdana;">s</span><span style="font-family:Verdana;"> that the charge carrier</span><span style="font-family:Verdana;">’</span><span style="font-family:Verdana;">s effective lifetime decrease with the magnetic field increase.</span>展开更多
Sb_(2)Se_(3)solar cells have achieved a power conversion efficiency(PCE)of over 10%.However,the serious open-circuit voltage deficit(VOC-deificit),induced by the hard-to-control crystal orientation and heterojunction ...Sb_(2)Se_(3)solar cells have achieved a power conversion efficiency(PCE)of over 10%.However,the serious open-circuit voltage deficit(VOC-deificit),induced by the hard-to-control crystal orientation and heterojunction interface reaction,limits the PCE of vapor transport deposition(VTD)processed Sb_(2)Se_(3)solar cells.To overcome the VOC-deficit problem of VTD processed Sb_(2)Se_(3)solar cells,herein,an in-situ bandgap regulation strategy is innovatively proposed to prepare a wide band gap Sb2(S,Se)3seed layer(WBSL)at CdS/Sb_(2)Se_(3)heterojunction interface to improve the PCE of Sb_(2)Se_(3)solar cells.The analysis results show that the introduced Sb2(S,Se)3seed layer can enhance the[001]orientation of Sb_(2)Se_(3)thin films,broaden the band gap of heterojunction interface,and realize a"Spike-like"conduction band alignment with ΔE_(c)=0.11 eV.In addition,thanks to the suppressed CdS/Sb_(2)Se_(3)interface reaction after WBSL application,the depletion region width of Sb_(2)Se_(3)solar cells is widened,and the quality of CdS/Sb_(2)Se_(3)interface and the carrier transporting performance of Sb_(2)Se_(3)solar cells are significantly improved as well.Moreover,the harmful Se vacancy defects near the front interface of Sb_(2)Se_(3)solar cells can be greatly diminished by WBSL.Finally,the PCE of Sb_(2)Se_(3)solar cells is improved from 7.0%to 7.6%;meanwhile the VOCis increased to 466 mV which is the highest value for the VTD derived Sb_(2)Se_(3)solar cells.This work will provide a valuable reference for the interface and orientation regulation of antimony-based chalcogenide solar cells.展开更多
Piezoelectric nanogenerators(NGs)have been developed for converting mechanical energy into electric energy using ZnO,GaN,ZnSnO3,and PZT nanowires.Due to the unique polarity and non-central symmetry of the wurtzite str...Piezoelectric nanogenerators(NGs)have been developed for converting mechanical energy into electric energy using ZnO,GaN,ZnSnO3,and PZT nanowires.Due to the unique polarity and non-central symmetry of the wurtzite structure,a composite made of using the conical shaped nanowires are used as a simple,cost-effective,and scalable nanogenerator.Based on the finite element methods,the output voltage of the nanogenerator is modeled numerically.The key factors:the spatial location of nanowires,length and dip angle of nanowires,thickness of NG devices,and the physical properties of the polymer inside NGs,which affect the output voltage are studied.The results provide guidance for optimization the output of piezoelectric nanogenerators.展开更多
Photoinduced intermolecular charge transfer(PICT)determines the voltage loss in bulk heterojunction(BHJ)organic photovoltaics(OPVs),and this voltage loss can be minimized by inducing efficient PICT,which requires ener...Photoinduced intermolecular charge transfer(PICT)determines the voltage loss in bulk heterojunction(BHJ)organic photovoltaics(OPVs),and this voltage loss can be minimized by inducing efficient PICT,which requires energy-state matching between the donor and acceptor at the BHJ interfaces.Thus,both geometrically and energetically accessible delocalized state matching at the hot energy level is crucial for achieving efficient PICT.In this study,an effective method for quantifying the hot state matching of OPVs was developed.The degree of energy-state matching between the electron donor and acceptor at BHJ interfaces was quantified using a mismatching factor(MF)calculated from the modified optical density of the BHJ.Furthermore,the correlation between the open-circuit voltage(Voc)of the OPV device and energy-state matching at the BHJ interface was investigated using the calculated MF.The OPVs with small absolute MF values exhibited high Voc values.This result clearly indicates that the energy-state matching between the donor and acceptor is crucial for achieving a high Voc in OPVs.Because the MF indicates the degree of energy-state matching,which is a critical factor for suppressing energy loss,it can be used to estimate the Voc loss in OPVs.展开更多
The open circuit voltage （Voc） of small- molecule organic solar cells （OSCs） could be improved by doping suitable fluorescent dyes into the donor layers. In this paper, 4-（dicyanomethylene）-2-t-butyl-6-（1,1,7,7...The open circuit voltage （Voc） of small- molecule organic solar cells （OSCs） could be improved by doping suitable fluorescent dyes into the donor layers. In this paper, 4-（dicyanomethylene）-2-t-butyl-6-（1,1,7,7- tetramethyljulolidyl-9-enyl）-4H-pyran （DCJTB） was used as a dopant, and the performance of the OSCs with different DCJTB concentration in copper phthalocyanine （CuPc） was studied. The results showed that the Voc of the OSC with 50% of DCJTB in CuPc increased by 15%, compared with that of the standard CuPc/fullerene （C60） device. The enhancement of the Voc was attributed to the lower highest occupied molecular orbital （HOMO） level in the DCJTB than that in the CuPc. Also, the light absorption intensity is enhanced between 400 and 550nm, where CuPc and C6o have low absorbance, leading to a broad absorption spectrum.展开更多
This paper identifies the contributions of p-a-SiC：H layers and i-a-Si：H layers to the open circuit voltage of p-i-n type a-Si：H solar cells deposited at a low temperature of 125℃. We find that poor quality p-a-Si...This paper identifies the contributions of p-a-SiC：H layers and i-a-Si：H layers to the open circuit voltage of p-i-n type a-Si：H solar cells deposited at a low temperature of 125℃. We find that poor quality p-a-SiC：H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely. A significant improvement in open circuit voltage has been obtained by using high quality p-~SiC：H films optimized at the ＂low-power regime＂ under low silane flow rates and high hydrogen dilution conditions.展开更多
It is well known that [6,6]-phenyl-C<sub><span style="font-size:12px;font-family:Verdana;">61</span></sub><span style="font-size:12px;font-family:Verdana;">-butyric ac...It is well known that [6,6]-phenyl-C<sub><span style="font-size:12px;font-family:Verdana;">61</span></sub><span style="font-size:12px;font-family:Verdana;">-butyric acid methyl ester (PCBM) is a common n-type passivation material in PSCs, usually used as an interface modification layer. However, PCBM is extremely expensive and is not suitable for future industrialization. Herein, the various concentrations of PCBM as an additive are adopted for PSCs. It not only avoids the routine process of spin coating the multi-layer films, but also reduces the PCBM material and cost. Meanwhile, PCBM can passivate the grain surface and modulate morphology of perovskite films. Furthermore, the most important optical parameters of solar cells, the current density (</span><i><span style="font-size:12px;font-family:Verdana;">J</span><sub><span style="font-size:12px;font-family:Verdana;">sc</span></sub></i><span style="font-size:12px;font-family:Verdana;">), fill factor (FF), open-circuit voltage (</span><i><span style="font-size:12px;font-family:Verdana;">V</span><sub><span style="font-size:12px;font-family:Verdana;">oc</span></sub></i><span style="font-size:12px;font-family:Verdana;">) and power conversion efficiencies (PCE) were improved. Especially, when the PCBM doping ratio in CH</span><sub><span style="font-size:12px;font-family:Verdana;">3</span></sub><span style="font-size:12px;font-family:Verdana;">NH</span><sub><span style="font-size:12px;font-family:Verdana;">3</span></sub><span style="font-size:12px;font-family:Verdana;">PbI</span><sub><span style="font-size:12px;font-family:Verdana;">3</span></sub><span style="font-size:12px;font-family:Verdana;"> (MAPbI</span><sub><span style="font-size:12px;font-family:Verdana;">3</span></sub><span style="font-size:12px;font-family:Verdana;">) precursor solution was 1</span><span><span><span style="font-family:;" "=""> </span></span></span><span><span><span style="font-family:;" "=""><span style="font-size:12px;font-family:Verdana;">wt%, the device obtained the smallest </span><i><span style="font-size:12px;font-family:Verdana;">V</span><sub><span style="font-size:12px;font-family:Verdana;">oc</span></sub></i><span style="font-size:12px;font-family:Verdana;"> decay (less than 1%) in the p-i-n type PSCs with poly</span></span></span></span><span><span><span style="font-family:;" "=""> </span></span></span><span><span><span style="font-family:;" "=""><span style="font-size:12px;font-family:Verdana;">(3,4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS) as hole transport layer (HTL) and fullerene (C</span><sub><span style="font-size:12px;font-family:Verdana;">60</span></sub><span style="font-size:12px;font-family:Verdana;">) as electron transport layer (ETL). The PSCs </span><i><span style="font-size:12px;font-family:Verdana;">V</span><sub><span style="font-size:12px;font-family:Verdana;">oc</span></sub></i><span style="font-size:12px;font-family:Verdana;"> stability improvement is attri</span><span style="font-size:12px;font-family:Verdana;">buted to enhanced crystallinity of photoactive layer and decreased non-radiative </span><span style="font-size:12px;font-family:Verdana;">recombination by PCBM doping in the perovskites.</span></span></span></span>展开更多
The possibility of the increase in open-circuit voltage of organic photovoltaic cells based primarily indium-tin oxide (ITO)/rubrene/fullerene/Al structure by changing the work function of ITO anodes and Al cathodes w...The possibility of the increase in open-circuit voltage of organic photovoltaic cells based primarily indium-tin oxide (ITO)/rubrene/fullerene/Al structure by changing the work function of ITO anodes and Al cathodes was described in this work. To change built-in potential preferably in order to increase the open-circuit voltage, the work function of ITO should be increased and work function of Al should be decreased. The correlation between the change in work functions of electrodes and performance of the organic photovoltaic cells before and after surface modifications was examined in detail. The enhancement of open-circuit voltage depends on a function of work function change of both ITO and Al electrode. We could show that the built-in potential in the cells played an important role in open-circuit voltage.展开更多
Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)solar cells suffer from significant open-circuit voltage(V_(OC))deficits due to severe interfacial and bulk recombination,restricting their power conversion efficiency(PCE)far bel...Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)solar cells suffer from significant open-circuit voltage(V_(OC))deficits due to severe interfacial and bulk recombination,restricting their power conversion efficiency(PCE)far below the ShockleyQueisser limit.This work proposes a low-temperature annealing strategy during ITO sputtering(SA)to synergistically address these challenges.The temperature applied during ITO sputtering not only improves the crystallinity,carrier concentration,and optical transmittance of the ITO layer but also promotes the diffusion of In from ITO into both CdS and CZTSSe layers.Consequently,lattice matching at the CZTSSe/CdS interface is optimized,enabling epitaxial growth.And a favorable ITO/In:CdS/In&Cd:CZTSSe structure with optimal band alignment is obtained.As a result,a champion device with a PCE of 1_(4).29%was achieved.The SA-treating also enabled the CZTSSe solar cells to achieve the highest V_(OC)reported to date,exceeding 590 mV.This underscores the essential role of SA processing in optimizing interface engineering and suppressing defects,thus promoting the development of low-cost,high-performance kesterite photovoltaics.展开更多
基金Supported by National Natural Science Foundation of China(Grant No.51507012)Beijing Municipal Natural Science Foundation of China(Grant No.3182035)
文摘The current research of state of charge(SoC) online estimation of lithium-ion battery(LiB) in electric vehicles(EVs)mainly focuses on adopting or improving of battery models and estimation filters. However, little attention has been paid to the accuracy of various open circuit voltage(OCV) models for correcting the SoC with aid of the ampere-hour counting method. This paper presents a comprehensive comparison study on eighteen OCV models which cover the majority of models used in literature. The low-current OCV tests are conducted on the typical commercial LiFePO/graphite(LFP) and LiNiMnCoO/graphite(NMC) cells to obtain the experimental OCV-SoC curves at different ambient temperature and aging stages. With selected OCV and SoC points from experimental OCV-SoC curves, the parameters of each OCV model are determined by curve fitting toolbox of MATLAB 2013. Then the fitting OCV-SoC curves based on diversified OCV models are also obtained. The indicator of root-mean-square error(RMSE) between the experimental data and fitted data is selected to evaluate the adaptabilities of these OCV models for their main features, advantages,and limitations. The sensitivities of OCV models to ambient temperatures, aging stages, numbers of data points,and SoC regions are studied for both NMC and LFP cells. Furthermore, the influences of these models on SoC estimation are discussed. Through a comprehensive comparison and analysis on OCV models, some recommendations in selecting OCV models for both NMC and LFP cells are given.
文摘The effect of the valence band tail width on the open circuit voltage of P3HT：PCBM bulk heterojunction solar cell is investigated by using the AMPS-1D computer program. An effective medium model with exponential valence and conduction band tail states is used to simulate the photovoltaic cell. The simulation result shows that the open circuit voltage depends Iinearly on the logarithm of the generation rate and the slope depends on the width of the valence band tail. The open circuit voltage decreases with the increasing width of the band tail. The dark and light ideality factors increase with the width of the valence band tail.
基金Supported by the Specialized Research Fund for the Doctoral Program of Higher Education under Grant No 20120031110039
文摘The objective of this study is to find an effective method to improve Voc without Jsc loss for Cu2ZnSnSe4 （CZTSe） thin film solar cells, which have been fabricated by the one step co-evaporation technique. Surface sulfurization of CZTSe thin films is carried out by using one technique that does not utilize toxic H2S gas; a sequential evaporation of SnS after CZTSe deposition and the annealing of CZTSe thin films in selenium vapor. A Cu2ZnSn（S, Se）4 （CZTSSe） thin layer is grown on the surface of the CZTSe thin film after the annealing. The conversion efficiency of the completed device is improved due to the enhancement of Voc, which could be attributed to the formation of a hole-recombination barrier at the surface or the passivation of the surface and grain boundary by S incorporation.
文摘<span style="font-family:Verdana;">This manuscript presents a simple method for excess minority carriers’ lifetime measurement</span><span style="font-family:""> </span><span style="font-family:""><span style="font-family:Verdana;">within the base region of p-n junction polycrystalline solar </span><span style="font-family:Verdana;">cell</span></span><span style="font-family:""> </span><span style="font-family:Verdana;">in transient mode.</span><span style="font-family:""> </span><span style="font-family:Verdana;">This work is an experimental transient</span><span style="font-family:Verdana;"> 3-Dimensionnal study.</span><span style="font-family:""> </span><span style="font-family:Verdana;">The magnitude of the magnetic field B is varied from 0 mT to 0.045 mT. Indeed, the solar cell is illuminated by a stroboscopic flash with air mass 1.5</span><span style="font-family:""> </span><span style="font-family:Verdana;">and under magnetic field in transient state.</span><span style="font-family:""> </span><span style="font-family:Verdana;">The experimental details are assumed in a figure. The procedure is outlined by the Open Circuit Voltage Decay analysis. Effective minority carrier life-time is calculated by fitting the linear zone of the transient voltage decay curve</span><span style="font-family:""> </span><span style="font-family:Verdana;">because linear decay is an ideal decay. The kaleidagraph software permits access to the slope of the curve which is inversely proportional to the</span><span style="font-family:""> </span><span style="font-family:Verdana;">lifetime. The external magnetic effects</span><span style="font-family:""> </span><span style="font-family:Verdana;">on minority carriers’ effective lifetime </span><span style="font-family:Verdana;">is</span><span style="font-family:Verdana;"> then</span><span style="font-family:""> </span><span style="font-family:Verdana;">presented and analyzed.</span><span style="font-family:""> </span><span style="font-family:Verdana;">The analysis show</span><span style="font-family:Verdana;">s</span><span style="font-family:Verdana;"> that the charge carrier</span><span style="font-family:Verdana;">’</span><span style="font-family:Verdana;">s effective lifetime decrease with the magnetic field increase.</span>
基金supported by the National Natural Science Foundation of China(62305064)the Research Start-up Fund for Young Teachers of Fuzhou University(602592)+1 种基金the Young and Middleaged Teacher Education Research Project of Fujian Province(JAT220011)the Fujian Science&Technology Innovation Laboratory Optoelectronic Information of China(Grant No.2021ZZ124).
文摘Sb_(2)Se_(3)solar cells have achieved a power conversion efficiency(PCE)of over 10%.However,the serious open-circuit voltage deficit(VOC-deificit),induced by the hard-to-control crystal orientation and heterojunction interface reaction,limits the PCE of vapor transport deposition(VTD)processed Sb_(2)Se_(3)solar cells.To overcome the VOC-deficit problem of VTD processed Sb_(2)Se_(3)solar cells,herein,an in-situ bandgap regulation strategy is innovatively proposed to prepare a wide band gap Sb2(S,Se)3seed layer(WBSL)at CdS/Sb_(2)Se_(3)heterojunction interface to improve the PCE of Sb_(2)Se_(3)solar cells.The analysis results show that the introduced Sb2(S,Se)3seed layer can enhance the[001]orientation of Sb_(2)Se_(3)thin films,broaden the band gap of heterojunction interface,and realize a"Spike-like"conduction band alignment with ΔE_(c)=0.11 eV.In addition,thanks to the suppressed CdS/Sb_(2)Se_(3)interface reaction after WBSL application,the depletion region width of Sb_(2)Se_(3)solar cells is widened,and the quality of CdS/Sb_(2)Se_(3)interface and the carrier transporting performance of Sb_(2)Se_(3)solar cells are significantly improved as well.Moreover,the harmful Se vacancy defects near the front interface of Sb_(2)Se_(3)solar cells can be greatly diminished by WBSL.Finally,the PCE of Sb_(2)Se_(3)solar cells is improved from 7.0%to 7.6%;meanwhile the VOCis increased to 466 mV which is the highest value for the VTD derived Sb_(2)Se_(3)solar cells.This work will provide a valuable reference for the interface and orientation regulation of antimony-based chalcogenide solar cells.
文摘Piezoelectric nanogenerators(NGs)have been developed for converting mechanical energy into electric energy using ZnO,GaN,ZnSnO3,and PZT nanowires.Due to the unique polarity and non-central symmetry of the wurtzite structure,a composite made of using the conical shaped nanowires are used as a simple,cost-effective,and scalable nanogenerator.Based on the finite element methods,the output voltage of the nanogenerator is modeled numerically.The key factors:the spatial location of nanowires,length and dip angle of nanowires,thickness of NG devices,and the physical properties of the polymer inside NGs,which affect the output voltage are studied.The results provide guidance for optimization the output of piezoelectric nanogenerators.
基金National Research Foundation of Korea,Grant/Award Number:2022R1A6A1A03051158BrainLink Program,Grant/Award Number:2022H1D3A3A01077343Nano Material Technology Development Program,Grant/Award Number:2021M3H4A1A02057007。
文摘Photoinduced intermolecular charge transfer(PICT)determines the voltage loss in bulk heterojunction(BHJ)organic photovoltaics(OPVs),and this voltage loss can be minimized by inducing efficient PICT,which requires energy-state matching between the donor and acceptor at the BHJ interfaces.Thus,both geometrically and energetically accessible delocalized state matching at the hot energy level is crucial for achieving efficient PICT.In this study,an effective method for quantifying the hot state matching of OPVs was developed.The degree of energy-state matching between the electron donor and acceptor at BHJ interfaces was quantified using a mismatching factor(MF)calculated from the modified optical density of the BHJ.Furthermore,the correlation between the open-circuit voltage(Voc)of the OPV device and energy-state matching at the BHJ interface was investigated using the calculated MF.The OPVs with small absolute MF values exhibited high Voc values.This result clearly indicates that the energy-state matching between the donor and acceptor is crucial for achieving a high Voc in OPVs.Because the MF indicates the degree of energy-state matching,which is a critical factor for suppressing energy loss,it can be used to estimate the Voc loss in OPVs.
基金Acknowledgements This work was partially supported by the National Natural Science Foundation of China （NSFC） （Grant Nos. 60736005 and 60425101-1）, the Foundation for Innovative Research Groups of the NSFC （No. 60721001）, the Provincial Program （No. 9140A02060609DZ0208）, Doctoral Fund of Ministry of China （No. 20090185110020）, the National Hi- Tech Research and Development Program of China （No. 2007AA03Z424）, the Project Sponsored by SRF for ROCS, SEM （No. GGRYJJ08-05）, and Young Excellence Project of Sichuan （No. 09ZQ026-074）.
文摘The open circuit voltage （Voc） of small- molecule organic solar cells （OSCs） could be improved by doping suitable fluorescent dyes into the donor layers. In this paper, 4-（dicyanomethylene）-2-t-butyl-6-（1,1,7,7- tetramethyljulolidyl-9-enyl）-4H-pyran （DCJTB） was used as a dopant, and the performance of the OSCs with different DCJTB concentration in copper phthalocyanine （CuPc） was studied. The results showed that the Voc of the OSC with 50% of DCJTB in CuPc increased by 15%, compared with that of the standard CuPc/fullerene （C60） device. The enhancement of the Voc was attributed to the lower highest occupied molecular orbital （HOMO） level in the DCJTB than that in the CuPc. Also, the light absorption intensity is enhanced between 400 and 550nm, where CuPc and C6o have low absorbance, leading to a broad absorption spectrum.
基金Project supported by the National High Technology Research and Development Program of China （Grant No. 2009AA05Z422）, the National Basic Research Program of China （Grant Nos. 2011CBA00705, 2011CBA00706, and 2011CBA00707）, and the Natural Science Foundation of Tianjin （Grant No. 08JCZDJC22200）.
文摘This paper identifies the contributions of p-a-SiC：H layers and i-a-Si：H layers to the open circuit voltage of p-i-n type a-Si：H solar cells deposited at a low temperature of 125℃. We find that poor quality p-a-SiC：H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely. A significant improvement in open circuit voltage has been obtained by using high quality p-~SiC：H films optimized at the ＂low-power regime＂ under low silane flow rates and high hydrogen dilution conditions.
文摘It is well known that [6,6]-phenyl-C<sub><span style="font-size:12px;font-family:Verdana;">61</span></sub><span style="font-size:12px;font-family:Verdana;">-butyric acid methyl ester (PCBM) is a common n-type passivation material in PSCs, usually used as an interface modification layer. However, PCBM is extremely expensive and is not suitable for future industrialization. Herein, the various concentrations of PCBM as an additive are adopted for PSCs. It not only avoids the routine process of spin coating the multi-layer films, but also reduces the PCBM material and cost. Meanwhile, PCBM can passivate the grain surface and modulate morphology of perovskite films. Furthermore, the most important optical parameters of solar cells, the current density (</span><i><span style="font-size:12px;font-family:Verdana;">J</span><sub><span style="font-size:12px;font-family:Verdana;">sc</span></sub></i><span style="font-size:12px;font-family:Verdana;">), fill factor (FF), open-circuit voltage (</span><i><span style="font-size:12px;font-family:Verdana;">V</span><sub><span style="font-size:12px;font-family:Verdana;">oc</span></sub></i><span style="font-size:12px;font-family:Verdana;">) and power conversion efficiencies (PCE) were improved. Especially, when the PCBM doping ratio in CH</span><sub><span style="font-size:12px;font-family:Verdana;">3</span></sub><span style="font-size:12px;font-family:Verdana;">NH</span><sub><span style="font-size:12px;font-family:Verdana;">3</span></sub><span style="font-size:12px;font-family:Verdana;">PbI</span><sub><span style="font-size:12px;font-family:Verdana;">3</span></sub><span style="font-size:12px;font-family:Verdana;"> (MAPbI</span><sub><span style="font-size:12px;font-family:Verdana;">3</span></sub><span style="font-size:12px;font-family:Verdana;">) precursor solution was 1</span><span><span><span style="font-family:;" "=""> </span></span></span><span><span><span style="font-family:;" "=""><span style="font-size:12px;font-family:Verdana;">wt%, the device obtained the smallest </span><i><span style="font-size:12px;font-family:Verdana;">V</span><sub><span style="font-size:12px;font-family:Verdana;">oc</span></sub></i><span style="font-size:12px;font-family:Verdana;"> decay (less than 1%) in the p-i-n type PSCs with poly</span></span></span></span><span><span><span style="font-family:;" "=""> </span></span></span><span><span><span style="font-family:;" "=""><span style="font-size:12px;font-family:Verdana;">(3,4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS) as hole transport layer (HTL) and fullerene (C</span><sub><span style="font-size:12px;font-family:Verdana;">60</span></sub><span style="font-size:12px;font-family:Verdana;">) as electron transport layer (ETL). The PSCs </span><i><span style="font-size:12px;font-family:Verdana;">V</span><sub><span style="font-size:12px;font-family:Verdana;">oc</span></sub></i><span style="font-size:12px;font-family:Verdana;"> stability improvement is attri</span><span style="font-size:12px;font-family:Verdana;">buted to enhanced crystallinity of photoactive layer and decreased non-radiative </span><span style="font-size:12px;font-family:Verdana;">recombination by PCBM doping in the perovskites.</span></span></span></span>
文摘The possibility of the increase in open-circuit voltage of organic photovoltaic cells based primarily indium-tin oxide (ITO)/rubrene/fullerene/Al structure by changing the work function of ITO anodes and Al cathodes was described in this work. To change built-in potential preferably in order to increase the open-circuit voltage, the work function of ITO should be increased and work function of Al should be decreased. The correlation between the change in work functions of electrodes and performance of the organic photovoltaic cells before and after surface modifications was examined in detail. The enhancement of open-circuit voltage depends on a function of work function change of both ITO and Al electrode. We could show that the built-in potential in the cells played an important role in open-circuit voltage.
基金supported by the National Key Research and Development Program of China(2024YFB4205000)the National Natural Science Foundation of China(52525405,62504071,and 52572217)+1 种基金the Natural Science Foundation of Henan Province(252300421255 and242300420313)the Key Research Projects of Higher Education Institutions in Henan Province(24A430003)。
文摘Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)solar cells suffer from significant open-circuit voltage(V_(OC))deficits due to severe interfacial and bulk recombination,restricting their power conversion efficiency(PCE)far below the ShockleyQueisser limit.This work proposes a low-temperature annealing strategy during ITO sputtering(SA)to synergistically address these challenges.The temperature applied during ITO sputtering not only improves the crystallinity,carrier concentration,and optical transmittance of the ITO layer but also promotes the diffusion of In from ITO into both CdS and CZTSSe layers.Consequently,lattice matching at the CZTSSe/CdS interface is optimized,enabling epitaxial growth.And a favorable ITO/In:CdS/In&Cd:CZTSSe structure with optimal band alignment is obtained.As a result,a champion device with a PCE of 1_(4).29%was achieved.The SA-treating also enabled the CZTSSe solar cells to achieve the highest V_(OC)reported to date,exceeding 590 mV.This underscores the essential role of SA processing in optimizing interface engineering and suppressing defects,thus promoting the development of low-cost,high-performance kesterite photovoltaics.
