A novel equivalent circuit model for a GaAs PIN diode is presented based on physical analysis. The diode is divided into three parts： the p^＋ n^- junction, the i-layer, and the n^- n^＋ junction, which are modeled s...A novel equivalent circuit model for a GaAs PIN diode is presented based on physical analysis. The diode is divided into three parts： the p^＋ n^- junction, the i-layer, and the n^- n^＋ junction, which are modeled separately. The entire model is then formed by combining the three sub-models. In this way, the model＇s accuracy is greatly enhanced. Furthermore, the corresponding parameter extraction method is easy, requiring no rigorous experiment or measurement. To validate this newly proposed model,fifteen groups of diodes are fabricated. Measurement shows that the model exactly represents behavior of GaAs PIN diodes under both forward and reversely biased conditions.展开更多
阐述了作战云的内涵,分析了作战云的特点和发展需求.构建了一个网络、二类服务、三种应用的作战云系统体系结构,特别提出了组织即服务(Organization as a service,Oaas)的概念,以此为基础,构造了5层构架的作战云技术体系结构.结合军事应...阐述了作战云的内涵,分析了作战云的特点和发展需求.构建了一个网络、二类服务、三种应用的作战云系统体系结构,特别提出了组织即服务(Organization as a service,Oaas)的概念,以此为基础,构造了5层构架的作战云技术体系结构.结合军事应用,提出了包含4种运用模式的作战云作战体系结构.展开更多
A monolithic single pole single throw （SPST） switch is developed with GaAs PIN diode technology from IMECAS. A novel small signal model of a GaAs PIN diode is developed for circuit simulation. The switch features an...A monolithic single pole single throw （SPST） switch is developed with GaAs PIN diode technology from IMECAS. A novel small signal model of a GaAs PIN diode is developed for circuit simulation. The switch features an on-state insertion loss of less than 1.6dB and a return loss of greater than 10dB while maintaining an off-state isolation of greater than 23dB from 5.5 to 7. 5GHz. The measured 1dB power gain compression point is about 20dBm.展开更多
文摘A novel equivalent circuit model for a GaAs PIN diode is presented based on physical analysis. The diode is divided into three parts： the p^＋ n^- junction, the i-layer, and the n^- n^＋ junction, which are modeled separately. The entire model is then formed by combining the three sub-models. In this way, the model＇s accuracy is greatly enhanced. Furthermore, the corresponding parameter extraction method is easy, requiring no rigorous experiment or measurement. To validate this newly proposed model,fifteen groups of diodes are fabricated. Measurement shows that the model exactly represents behavior of GaAs PIN diodes under both forward and reversely biased conditions.
文摘阐述了作战云的内涵,分析了作战云的特点和发展需求.构建了一个网络、二类服务、三种应用的作战云系统体系结构,特别提出了组织即服务(Organization as a service,Oaas)的概念,以此为基础,构造了5层构架的作战云技术体系结构.结合军事应用,提出了包含4种运用模式的作战云作战体系结构.
文摘A monolithic single pole single throw （SPST） switch is developed with GaAs PIN diode technology from IMECAS. A novel small signal model of a GaAs PIN diode is developed for circuit simulation. The switch features an on-state insertion loss of less than 1.6dB and a return loss of greater than 10dB while maintaining an off-state isolation of greater than 23dB from 5.5 to 7. 5GHz. The measured 1dB power gain compression point is about 20dBm.
