Compound Co_3(o-HOC_6H_4S)_2(o-OC_6H_4S)_2(PEt_3)_3 was obtained by reaction of CoCl_2, o-HOC_6H_4SH(H_2mD)and PEt_3 in ethanol in the presence of NaOCH_3.The three Co atoms are triangularly arranged and asymmetricall...Compound Co_3(o-HOC_6H_4S)_2(o-OC_6H_4S)_2(PEt_3)_3 was obtained by reaction of CoCl_2, o-HOC_6H_4SH(H_2mD)and PEt_3 in ethanol in the presence of NaOCH_3.The three Co atoms are triangularly arranged and asymmetrically bridged by four S and one O atoms from the four H_2mp ligands and terminally ligated by one O and three P atoms.Two free hydroxyl groups form two internal hydrogen bonds with adjacent oxo donor atoms.展开更多
Microwave Electron Cyclotron Resonance (ECR) Plasma assisted Chemical Vapor Deposition (CVD) technology has been used to prepare Si3N4 films, which were analyzed by using infrared (IR) transmission spectroscopy and XP...Microwave Electron Cyclotron Resonance (ECR) Plasma assisted Chemical Vapor Deposition (CVD) technology has been used to prepare Si3N4 films, which were analyzed by using infrared (IR) transmission spectroscopy and XPS. The analysis results show that with the increase of the deposition temperature, the H content decreases, and the densification of the film increases.When the temperature is up to 360℃, the stoichiometrical rate of Si:N is close to 0.75. The protective property of Si3N4 films is also examined.展开更多
文摘Compound Co_3(o-HOC_6H_4S)_2(o-OC_6H_4S)_2(PEt_3)_3 was obtained by reaction of CoCl_2, o-HOC_6H_4SH(H_2mD)and PEt_3 in ethanol in the presence of NaOCH_3.The three Co atoms are triangularly arranged and asymmetrically bridged by four S and one O atoms from the four H_2mp ligands and terminally ligated by one O and three P atoms.Two free hydroxyl groups form two internal hydrogen bonds with adjacent oxo donor atoms.
文摘Microwave Electron Cyclotron Resonance (ECR) Plasma assisted Chemical Vapor Deposition (CVD) technology has been used to prepare Si3N4 films, which were analyzed by using infrared (IR) transmission spectroscopy and XPS. The analysis results show that with the increase of the deposition temperature, the H content decreases, and the densification of the film increases.When the temperature is up to 360℃, the stoichiometrical rate of Si:N is close to 0.75. The protective property of Si3N4 films is also examined.
