Temperature-dependence and excitation-intensity-dependence of photoluminescence spectra for both disordered and ordered Ga 0.52 In 0.48 P are measured. The disordered sample is characterized by its single peak photolu...Temperature-dependence and excitation-intensity-dependence of photoluminescence spectra for both disordered and ordered Ga 0.52 In 0.48 P are measured. The disordered sample is characterized by its single peak photoluminescence spectrum which is excitation-intensity independent and has different activation energy at different temperature region. The ordered sample shows double peaks, the intensity of the high-energy peak has an anomalous increase firstly and quenches afterwards. The relative phenomena are reasonably explained in terms of lattice ordering and orientation superlattice model.展开更多
The optical parameters for three samples of intrinsic, doped Si and doped Mg (Al x Ga 1- x ) y In 1- y P prepared by the MOCVD on GaAs substrate were measured by using ellipsometry and were calc...The optical parameters for three samples of intrinsic, doped Si and doped Mg (Al x Ga 1- x ) y In 1- y P prepared by the MOCVD on GaAs substrate were measured by using ellipsometry and were calculated by the two-layer absorption film model. The results obtained were discussed. The grown rates and thickness of oxidic layer on the intrinsic (Al x Ga 1- x ) y In 1- y P surface exposed in the atmosphere were studied. A linear dependence of oxidic layer thickness on the time was obtained.展开更多
文摘Temperature-dependence and excitation-intensity-dependence of photoluminescence spectra for both disordered and ordered Ga 0.52 In 0.48 P are measured. The disordered sample is characterized by its single peak photoluminescence spectrum which is excitation-intensity independent and has different activation energy at different temperature region. The ordered sample shows double peaks, the intensity of the high-energy peak has an anomalous increase firstly and quenches afterwards. The relative phenomena are reasonably explained in terms of lattice ordering and orientation superlattice model.
文摘The optical parameters for three samples of intrinsic, doped Si and doped Mg (Al x Ga 1- x ) y In 1- y P prepared by the MOCVD on GaAs substrate were measured by using ellipsometry and were calculated by the two-layer absorption film model. The results obtained were discussed. The grown rates and thickness of oxidic layer on the intrinsic (Al x Ga 1- x ) y In 1- y P surface exposed in the atmosphere were studied. A linear dependence of oxidic layer thickness on the time was obtained.
