Tungsten(W)is an important material in tokamak walls and divertors.The W ion charge state distribution and the dynamic behavior of ions play important roles in the investigation of plasma–wall interactions using lase...Tungsten(W)is an important material in tokamak walls and divertors.The W ion charge state distribution and the dynamic behavior of ions play important roles in the investigation of plasma–wall interactions using laser-ablation-based diagnostics such as laser-induced breakdown spectroscopy and laser-induced ablation spectroscopy.In this work,we investigate the temporal and spatial evolutions of differently charged ions in a nanosecond-laser-produced W plasma in vacuum using time-of-flight mass spectroscopy.Ions with different charge states from 1 to 7(W+to W7+)are all observed.The temporal evolutions of the differently charged ions show that ions with higher charge states have higher velocities,indicating that space separation occurs between the differently charged ion groups.Spatially-resolved mass spectroscopy measurements further demonstrate the separation phenomenon.The temporal profile can be accurately fitted by a shifted Maxwell–Boltzmann distribution,and the velocities of the differently charged ions are also obtained from the fittings.It is found that the ion velocities increase continuously from the measured position of 0.75 cm to 2.25 cm away from the target surface,which indicates that the acceleration process lasts through the period of plasma expansion.The acceleration and space separation of the differently charged ions confirm that there is a dynamic plasma sheath in the laser-produced plasma,which provides essential information for the theoretical laser-ablation model with plasma formation and expansion.展开更多
We investigate the influence of interface charge on electrical performance of NbAIO/A1GaN/GaN metal-oxide- semiconductor high electron mobility transistors （MOSHEMTs）. Through C-V measurements and simulations, we fi...We investigate the influence of interface charge on electrical performance of NbAIO/A1GaN/GaN metal-oxide- semiconductor high electron mobility transistors （MOSHEMTs）. Through C-V measurements and simulations, we find that the donor-type interface fixed charge density Qit of 2.2 × 10^13 cm^-2 exists at the NbA10/A1GaN interface, which induces the shift of the threshold voltage much more negative. Furthermore, a trap density of approximately 0.43 × 10^13-1.14 ×10^13 cm^-2 eV^-1 is obtained at the NaA10/AlGaN interface, which is consistent with the frequency-dependent capacitance and conductance measurement results.展开更多
The reservoirs in the TZ1-TZ4 well block of the Tarim Basin are complex, and the hydrocarbon enrichment shows differences. The three Carboniferous oil layers are characterized by ＂oil in the upper and lower layers an...The reservoirs in the TZ1-TZ4 well block of the Tarim Basin are complex, and the hydrocarbon enrichment shows differences. The three Carboniferous oil layers are characterized by ＂oil in the upper and lower layers and gas in the middle＂ in profile and ＂oil in the west and gas in the east＂ in plane view. In order to discuss the complex reservoir accumulation mechanisms, based on the petroleum geology and reservoir distribution, we studied the generation history of source rocks, the fault evolution and sealing, the accumulation periods and gas washing, and reconstructed the accumulation process of the TZ1-TZ4 well block. It is concluded that the hydrocarbon enrichment differences of oil layers CIII, CII and CI were caused by multiple sources and multi-period hydrocarbon charging and adjustment. The CII was closely related to CIII, but CI was formed by reservoir adjustment during the Yanshan period and was not affected by gas washing after it was formed. During the Himalayan period, different degrees of gas washing in the east and west led to hydrocarbon enrichment differences on the plane. The Carboniferous accumulation process of two-stage charging and one-stage adjustment is summarized： oil charging during the late Hercynian period is the first accumulation period of CIII and CII; oil reservoirs were adjusted into CI in the Yanshan period; finally gas washing in the Himalayan period is the second accumulation period of CIII and CII, but CI was not affected by gas washing. This complex accumulation process leads to the hydrocarbon enrichment differences in the TZ1-TZ4 well block.展开更多
Semiconductor/metal junctions are widely discussed in photocatalysis.However,there is a notable scarcity of systematic studies focusing on photogenerated charge carrier transfer in such junctions.Herein,CdS/Pt,CdS/Au,...Semiconductor/metal junctions are widely discussed in photocatalysis.However,there is a notable scarcity of systematic studies focusing on photogenerated charge carrier transfer in such junctions.Herein,CdS/Pt,CdS/Au,and CdS/Ag are synthesized to serve as model systems for investigating the charge carrier transfer in semiconductor/metal junctions.Kelvin probe force microscopy is employed to visualize the transfer of photogenerated carriers in these materials.The results show that the electron transfer behavior under illumination is related to the conduction band position of CdS and the Fermi level position of the metal.Moreover,Schottky junctions hinder the transfer of photogenerated electrons from CdS to Pt and Au,whereas ohmic contacts facilitate the transfer of photogenerated electrons from CdS to Ag.This work provides novel insights into the mechanisms governing the transfer of photogenerated carriers in semiconductor/metal junctions.展开更多
Si-rich silicon nitride films are prepared by plasma-enhanced chemical vapor deposition method, followed by thermal annealing to form the Si nanocrystals（Si-NCs） embedded in Si Nx floating gate MOS structures. The c...Si-rich silicon nitride films are prepared by plasma-enhanced chemical vapor deposition method, followed by thermal annealing to form the Si nanocrystals（Si-NCs） embedded in Si Nx floating gate MOS structures. The capacitance–voltage（C–V）, current–voltage（I–V）, and admittance–voltage（G–V） measurements are used to investigate the charging characteristics. It is found that the maximum flat band voltage shift（△VFB） due to full charged holes（～ 6.2 V） is much larger than that due to full charged electrons（～ 1 V）. The charging displacement current peaks of electrons and holes can be also observed by the I–V measurements, respectively. From the G–V measurements we find that the hole injection is influenced by the oxide hole traps which are located near the Si O2/Si-substrate interface. Combining the results of C–V and G–V measurements, we find that the hole charging of the Si-NCs occurs via a two-step tunneling mechanism. The evolution of G–V peak originated from oxide traps exhibits the process of hole injection into these defects and transferring to the Si-NCs.展开更多
A 3.5 times PLL clock frequency multiplier for low voltage different signal （LVDS） driver is presented. A novel adaptive charge pump can automatically switch the loop bandwidth and a voltage-controlled oscillator （...A 3.5 times PLL clock frequency multiplier for low voltage different signal （LVDS） driver is presented. A novel adaptive charge pump can automatically switch the loop bandwidth and a voltage-controlled oscillator （VCO） is designed with the aid of frequency ranges reuse technology. The circuit is implemented using 1st Silicon 0.25 μm mixed-signal complementary metal-oxide-semiconductor （CMOS） process. Simulation results show that the PLL clock frequency multiplier has very low phase noise and very short capture time .展开更多
We use density functional theory and time-dependent together with a set of extensive mul- tidimensional visualization techniques to characterize the influence of keto effect on charge distribution at ground state and ...We use density functional theory and time-dependent together with a set of extensive mul- tidimensional visualization techniques to characterize the influence of keto effect on charge distribution at ground state and electronic transitions for neutral and charged hexaphyrin aromaticity with and without keto-defect. It is found that the aromaticity is the key fac- tor to influence the ground state Mulliken charges distribution properties, other than the meso-aryl-substituted effect. But with the enhancement of the keto-defect, the distribution changes of Mulliken charges on the hexaphyrin groups are larger than those on the pentaflu- orophenyl substituted groups, following with the aromaticity changes from nonaromatic to aromatic. Furthermore, through characterizing by transition density and charge difference density, direct visual evidence for neutral and charged aromaticity with and without keto- defect can be clearly derived, and the ability of charge transfer between units of monoradical （nonaromaticity） and singlet biradical （aromaticity） forms is much stronger than that of neutral forms.展开更多
Based on the charge storage mode,it is important to investigate the scaling dependence of memory performance in silicon nanocrystal（Si-NC） nonvolatile memory（NVM） devices for its scaling down limit.In this work,we...Based on the charge storage mode,it is important to investigate the scaling dependence of memory performance in silicon nanocrystal（Si-NC） nonvolatile memory（NVM） devices for its scaling down limit.In this work,we made eight kinds of test key cells with different gate widths and lengths by 0.13-μm node complementary metal oxide semiconductor（CMOS） technology.It is found that the memory windows of eight kinds of test key cells are almost the same of about1.64 V @ ±7 V/1 ms,which are independent of the gate area,but mainly determined by the average size（12 nm） and areal density（1.8×10^（11）/cm^2） of Si-NCs.The program/erase（P/E） speed characteristics are almost independent of gate widths and lengths.However,the erase speed is faster than the program speed of test key cells,which is due to the different charging behaviors between electrons and holes during the operation processes.Furthermore,the data retention characteristic is also independent of the gate area.Our findings are useful for further scaling down of Si-NC NVM devices to improve the performance and on-chip integration.展开更多
The static O-H bond parameters including O-H bond length, O-H charge difference, O-H Mulliken population and O-H bond stretching force constant (k) for 17 phenols were calculated by ab initio method HF/6-31G**. In com...The static O-H bond parameters including O-H bond length, O-H charge difference, O-H Mulliken population and O-H bond stretching force constant (k) for 17 phenols were calculated by ab initio method HF/6-31G**. In combination with the O-H bond dissociation enthalpies (BDE) of the phenols determined by experiment, it was found that there were poor correlationships between the static O-H bond parameters and O-H BDE. Considering the good correlationship bt tween O-H BDE and logarithm of free radical scavenging rate constant for phenolic antioxidant, it is reasonable to believe that the ineffectiveness of static O-H bond parameters in characterizing antioxidant activity arises from the fact that they cannot measure the O-H BDE.展开更多
State of charge(SOC) is a key parameter of lithium-ion battery. In this paper, a finite difference extended Kalman filter(FDEKF)with Hybrid Pulse Power Characterization(HPPC) parameters identification is proposed to e...State of charge(SOC) is a key parameter of lithium-ion battery. In this paper, a finite difference extended Kalman filter(FDEKF)with Hybrid Pulse Power Characterization(HPPC) parameters identification is proposed to estimate the SOC. The finite difference(FD) algorithm is benefit to compute the partial derivative of nonlinear function, which can reduce the linearization error generated by the extended Kalman filter(EKF). The FDEKF algorithm can reduce the computational load of controller in engineering practice without solving the Jacobian matrix. It is simple of dynamic model of lithium-ion battery to adopt a secondorder resistor-capacitor(2 RC) network, the parameters of which are identified by the HPPC. Two conditions, both constant current discharge(CCD) and urban dynamometer driving schedule(UDDS), are utilized to validate the FDEKF algorithm.Comparing convergence rate and accuracy between the FDEKF and the EKF algorithm, it can be seen that the former is a better candidate to estimate the SOC.展开更多
基金supported by the National Key R&D Program of China(No.2017YFE0301304)National Natural Science Foundation of China(No.12005034)the China Postdoctoral Science Foundation(No.2019M661087)supported by the US Department of Energy,Office of Defense Nuclear Nonproliferation Research and Development,under contract number DE-AC02-05CH11231 at the Lawrence Berkeley National Laboratory。
文摘Tungsten(W)is an important material in tokamak walls and divertors.The W ion charge state distribution and the dynamic behavior of ions play important roles in the investigation of plasma–wall interactions using laser-ablation-based diagnostics such as laser-induced breakdown spectroscopy and laser-induced ablation spectroscopy.In this work,we investigate the temporal and spatial evolutions of differently charged ions in a nanosecond-laser-produced W plasma in vacuum using time-of-flight mass spectroscopy.Ions with different charge states from 1 to 7(W+to W7+)are all observed.The temporal evolutions of the differently charged ions show that ions with higher charge states have higher velocities,indicating that space separation occurs between the differently charged ion groups.Spatially-resolved mass spectroscopy measurements further demonstrate the separation phenomenon.The temporal profile can be accurately fitted by a shifted Maxwell–Boltzmann distribution,and the velocities of the differently charged ions are also obtained from the fittings.It is found that the ion velocities increase continuously from the measured position of 0.75 cm to 2.25 cm away from the target surface,which indicates that the acceleration process lasts through the period of plasma expansion.The acceleration and space separation of the differently charged ions confirm that there is a dynamic plasma sheath in the laser-produced plasma,which provides essential information for the theoretical laser-ablation model with plasma formation and expansion.
基金Supported by the Basic Science Research Fund for the Central Universities of China under Grant No JB141104
文摘We investigate the influence of interface charge on electrical performance of NbAIO/A1GaN/GaN metal-oxide- semiconductor high electron mobility transistors （MOSHEMTs）. Through C-V measurements and simulations, we find that the donor-type interface fixed charge density Qit of 2.2 × 10^13 cm^-2 exists at the NbA10/A1GaN interface, which induces the shift of the threshold voltage much more negative. Furthermore, a trap density of approximately 0.43 × 10^13-1.14 ×10^13 cm^-2 eV^-1 is obtained at the NaA10/AlGaN interface, which is consistent with the frequency-dependent capacitance and conductance measurement results.
基金supported by the 973 Program (2006CB202308)the Foundation of State Key Laboratory of Petroleum Resources and Prospecting (PRPDX2008-05) the National Natural Science Foundation of China (Grant No. 40972088)
文摘The reservoirs in the TZ1-TZ4 well block of the Tarim Basin are complex, and the hydrocarbon enrichment shows differences. The three Carboniferous oil layers are characterized by ＂oil in the upper and lower layers and gas in the middle＂ in profile and ＂oil in the west and gas in the east＂ in plane view. In order to discuss the complex reservoir accumulation mechanisms, based on the petroleum geology and reservoir distribution, we studied the generation history of source rocks, the fault evolution and sealing, the accumulation periods and gas washing, and reconstructed the accumulation process of the TZ1-TZ4 well block. It is concluded that the hydrocarbon enrichment differences of oil layers CIII, CII and CI were caused by multiple sources and multi-period hydrocarbon charging and adjustment. The CII was closely related to CIII, but CI was formed by reservoir adjustment during the Yanshan period and was not affected by gas washing after it was formed. During the Himalayan period, different degrees of gas washing in the east and west led to hydrocarbon enrichment differences on the plane. The Carboniferous accumulation process of two-stage charging and one-stage adjustment is summarized： oil charging during the late Hercynian period is the first accumulation period of CIII and CII; oil reservoirs were adjusted into CI in the Yanshan period; finally gas washing in the Himalayan period is the second accumulation period of CIII and CII, but CI was not affected by gas washing. This complex accumulation process leads to the hydrocarbon enrichment differences in the TZ1-TZ4 well block.
基金supported by the National Key Research and Development Program of China(No.2022YFB3803600)the National Natural Science Foundation of China(Nos.22238009,51932007,U1905215,52073223,22278324,52272290,52173065,and 22202187)+2 种基金the Natural Science Foundation of Hubei Province of China(No.2022CFA001)the National Postdoctoral Program for Innovative Talents(No.BX2021275)the Project funded by China Postdoctoral Science Foundation(No.2022M712957).
文摘Semiconductor/metal junctions are widely discussed in photocatalysis.However,there is a notable scarcity of systematic studies focusing on photogenerated charge carrier transfer in such junctions.Herein,CdS/Pt,CdS/Au,and CdS/Ag are synthesized to serve as model systems for investigating the charge carrier transfer in semiconductor/metal junctions.Kelvin probe force microscopy is employed to visualize the transfer of photogenerated carriers in these materials.The results show that the electron transfer behavior under illumination is related to the conduction band position of CdS and the Fermi level position of the metal.Moreover,Schottky junctions hinder the transfer of photogenerated electrons from CdS to Pt and Au,whereas ohmic contacts facilitate the transfer of photogenerated electrons from CdS to Ag.This work provides novel insights into the mechanisms governing the transfer of photogenerated carriers in semiconductor/metal junctions.
基金Project supported by the National Basic Research Program of China(Grant No.2010CB934402)the National Natural Science Foundation of China(Grant No.11374153)
文摘Si-rich silicon nitride films are prepared by plasma-enhanced chemical vapor deposition method, followed by thermal annealing to form the Si nanocrystals（Si-NCs） embedded in Si Nx floating gate MOS structures. The capacitance–voltage（C–V）, current–voltage（I–V）, and admittance–voltage（G–V） measurements are used to investigate the charging characteristics. It is found that the maximum flat band voltage shift（△VFB） due to full charged holes（～ 6.2 V） is much larger than that due to full charged electrons（～ 1 V）. The charging displacement current peaks of electrons and holes can be also observed by the I–V measurements, respectively. From the G–V measurements we find that the hole injection is influenced by the oxide hole traps which are located near the Si O2/Si-substrate interface. Combining the results of C–V and G–V measurements, we find that the hole charging of the Si-NCs occurs via a two-step tunneling mechanism. The evolution of G–V peak originated from oxide traps exhibits the process of hole injection into these defects and transferring to the Si-NCs.
基金Supported by the National Key Pre-Research Project of China (413010701-3)
文摘A 3.5 times PLL clock frequency multiplier for low voltage different signal （LVDS） driver is presented. A novel adaptive charge pump can automatically switch the loop bandwidth and a voltage-controlled oscillator （VCO） is designed with the aid of frequency ranges reuse technology. The circuit is implemented using 1st Silicon 0.25 μm mixed-signal complementary metal-oxide-semiconductor （CMOS） process. Simulation results show that the PLL clock frequency multiplier has very low phase noise and very short capture time .
文摘We use density functional theory and time-dependent together with a set of extensive mul- tidimensional visualization techniques to characterize the influence of keto effect on charge distribution at ground state and electronic transitions for neutral and charged hexaphyrin aromaticity with and without keto-defect. It is found that the aromaticity is the key fac- tor to influence the ground state Mulliken charges distribution properties, other than the meso-aryl-substituted effect. But with the enhancement of the keto-defect, the distribution changes of Mulliken charges on the hexaphyrin groups are larger than those on the pentaflu- orophenyl substituted groups, following with the aromaticity changes from nonaromatic to aromatic. Furthermore, through characterizing by transition density and charge difference density, direct visual evidence for neutral and charged aromaticity with and without keto- defect can be clearly derived, and the ability of charge transfer between units of monoradical （nonaromaticity） and singlet biradical （aromaticity） forms is much stronger than that of neutral forms.
基金Project supported by the State Key Development Program for Basic Research of China(Grant No.2010CB934402)the National Natural Science Foundation of China(Grant Nos.11374153,61571221,and 61071008)
文摘Based on the charge storage mode,it is important to investigate the scaling dependence of memory performance in silicon nanocrystal（Si-NC） nonvolatile memory（NVM） devices for its scaling down limit.In this work,we made eight kinds of test key cells with different gate widths and lengths by 0.13-μm node complementary metal oxide semiconductor（CMOS） technology.It is found that the memory windows of eight kinds of test key cells are almost the same of about1.64 V @ ±7 V/1 ms,which are independent of the gate area,but mainly determined by the average size（12 nm） and areal density（1.8×10^（11）/cm^2） of Si-NCs.The program/erase（P/E） speed characteristics are almost independent of gate widths and lengths.However,the erase speed is faster than the program speed of test key cells,which is due to the different charging behaviors between electrons and holes during the operation processes.Furthermore,the data retention characteristic is also independent of the gate area.Our findings are useful for further scaling down of Si-NC NVM devices to improve the performance and on-chip integration.
文摘The static O-H bond parameters including O-H bond length, O-H charge difference, O-H Mulliken population and O-H bond stretching force constant (k) for 17 phenols were calculated by ab initio method HF/6-31G**. In combination with the O-H bond dissociation enthalpies (BDE) of the phenols determined by experiment, it was found that there were poor correlationships between the static O-H bond parameters and O-H BDE. Considering the good correlationship bt tween O-H BDE and logarithm of free radical scavenging rate constant for phenolic antioxidant, it is reasonable to believe that the ineffectiveness of static O-H bond parameters in characterizing antioxidant activity arises from the fact that they cannot measure the O-H BDE.
基金supported by the National Key Research and Development Program of China(Grant No.2017YFB0103100)the Science and Technology Special Project of Anhui Province(Grant No.18030901063)
文摘State of charge(SOC) is a key parameter of lithium-ion battery. In this paper, a finite difference extended Kalman filter(FDEKF)with Hybrid Pulse Power Characterization(HPPC) parameters identification is proposed to estimate the SOC. The finite difference(FD) algorithm is benefit to compute the partial derivative of nonlinear function, which can reduce the linearization error generated by the extended Kalman filter(EKF). The FDEKF algorithm can reduce the computational load of controller in engineering practice without solving the Jacobian matrix. It is simple of dynamic model of lithium-ion battery to adopt a secondorder resistor-capacitor(2 RC) network, the parameters of which are identified by the HPPC. Two conditions, both constant current discharge(CCD) and urban dynamometer driving schedule(UDDS), are utilized to validate the FDEKF algorithm.Comparing convergence rate and accuracy between the FDEKF and the EKF algorithm, it can be seen that the former is a better candidate to estimate the SOC.
