A facile sol–gel method and heating treatment process have been reported to synthesize the wurtzite phase ZnO nanofilms with the preferential growth orientation along the[001]direction on the FTO substrates.The as-pr...A facile sol–gel method and heating treatment process have been reported to synthesize the wurtzite phase ZnO nanofilms with the preferential growth orientation along the[001]direction on the FTO substrates.The as-prepared wurtzite phase ZnO nanofilms-based memristor with the W/ZnO/FTO sandwich has demonstrated a reliable nonvolatile bipolar resistive switching behaviors with an ultralow set voltage of about +3 V and reset voltage of approximately-3.6 V,high resistive switching ratio of more than two orders of magnitude,good resistance retention ability(up to 10^(4)s),and excellent durability.Furthermore,the resistive switching behavior in the low-resistance state is attributed to the Ohmic conduction mechanism,while the resistive switching behavior in the high-resistance state is controlled by the trap-modulated space charge limited current(SCLC)mechanism.In addition,the conductive filament model regulated by the oxygen vacancies has been proposed,where the nonvolatile bipolar resistive switching behaviors could be attributed to the formation and rupture of conductive filaments in the W/ZnO/FTO memristor.This work demonstrates that the as-prepared wurtzite phase ZnO nanofilms-based W/ZnO/FTO memristor has promising prospects in future nonvolatile memory applications.展开更多
In recent years,as the dimensions of the conventional semiconductor technology is approaching the physical limits,while the multifunction circuits are restricted by the relatively fixed characteristics of the traditio...In recent years,as the dimensions of the conventional semiconductor technology is approaching the physical limits,while the multifunction circuits are restricted by the relatively fixed characteristics of the traditional metal−oxide−semiconductor field-effect transistors,reconfigurable devices that can realize reconfigurable characteristics and multiple functions at device level have been seen as a promising method to improve integration density and reduce power consumption.Owing to the ultrathin structure,effective control of the electronic characteristics and ability to modulate structural defects,two-dimensional(2D)materials have been widely used to fabricate reconfigurable devices.In this review,we summarize the working principles and related logic applications of reconfigurable devices based on 2D materials,including generating tunable anti-ambipolar responses and demonstrating nonvolatile operations.Furthermore,we discuss the analog signal processing applications of anti-ambipolar transistors and the artificial intelligence hardware implementations based on reconfigurable transistors and memristors,respectively,therefore highlighting the outstanding advantages of reconfigurable devices in footprint,energy consumption and performance.Finally,we discuss the challenges of the 2D materials-based reconfigurable devices.展开更多
Ferromagnetic materials play an important role in memory materials,but conventional control methods are often limited by issues such as high power consumption and volatility.Multiferroic heterostructures provide a pro...Ferromagnetic materials play an important role in memory materials,but conventional control methods are often limited by issues such as high power consumption and volatility.Multiferroic heterostructures provide a promising alternative to achieve low power consumption and nonvolatile electric control of magnetic properties.In this paper,a two-dimensional multiferroic van der Waals heterostructure OsCl_(2)/Sc_(2)CO_(2),which is composed of ferromagnetic monolayer OsCl_(2)and ferroelectric monolayer Sc_(2)CO_(2),is studied by first-principles density functional theory.The results show that by reversing the direction of the electric polarization of Sc_(2)CO_(2),OsCl_(2)can be transformed from a semiconductor to a half-metal,demonstrating a nonvolatile electrical manipulation of the heterostructure through ferroelectric polarization.The underlying physical mechanism is explained by band alignments and charge density differences.Furthermore,based on the heterostructure,we construct a multiferroic tunnel junction with a tunnel electroresistance ratio of 3.38×10^(14)%and a tunnel magnetoresistance ratio of 5.04×10^(6)%,allowing control of conduction states via instantaneous electric or magnetic fields.The findings provide a feasible strategy for designing advanced nanodevices based on the giant tunnel electroresistance and tunnel magnetoresistance effects.展开更多
The presence of a van Hove singularity(vHS)at the Fermi level can trigger magnetic instability by mediating a spontaneous transition from paramagnetic to magnetically ordered states.While electrostatic doping(typicall...The presence of a van Hove singularity(vHS)at the Fermi level can trigger magnetic instability by mediating a spontaneous transition from paramagnetic to magnetically ordered states.While electrostatic doping(typically achieved via ionic gating)to shift the vHS to the Fermi level provides a general mechanism for engineering such magnetism,its volatile nature often leads to the collapse of induced states upon gate field removal.Here,a novel scheme is presented for non-volatile magnetic control by utilizing ferroelectric heterostructures to achieve reversible magnetism switching.Using two-dimensional VSiN_(3),a nonmagnetic material with Mexican-hat electronic band dispersions hosting vHSs,as a prototype,it is preliminarily demonstrated that both electron and hole doping can robustly induce magnetism.Further,by interfacing VSiN_(3)with ferroelectric Sc_(2)CO_(2),reversible switching of its magnetic state via polarization-driven heterointerfacial charge transfer is achieved.This mechanism enables a dynamic transition between insulating and half-metallic phases in VSiN_(3),establishing a pathway to design multiferroic tunnel junctions with giant tunneling electroresistance or magnetoresistance.This work bridges non-volatile ferroelectric control with vHS-enhanced magnetism,opening opportunities for energy-efficient and high-performance spintronic devices and non-volatile memory devices.展开更多
Interlayer antiferromagnetic coupling,small magnetic anisotropy,and low air stability of the intrinsic magnetic topological insulator MnBi_(2)Te_(4)have been critical bottlenecks to the future application of the quant...Interlayer antiferromagnetic coupling,small magnetic anisotropy,and low air stability of the intrinsic magnetic topological insulator MnBi_(2)Te_(4)have been critical bottlenecks to the future application of the quantum anomalous Hall efect(QAHE)at zero magnetic feld.In this study,we propose a scheme to utilize capped sliding van der Waals materials to efectively modulate the magnetic and topological properties of MnBi_(2)Te_(4).Our results demonstrate that the h-BN/MnBi_(2)Te_(4)/h-BN heterostructure,constructed by sliding ferroelectric h-BN bilayer and MnBi_(2)Te_(4),not only realizes a transition from interlayer antiferromagnetic to ferromagnetic coupling but also signifcantly enhances the out-of-plane magnetism and air stability of MnBi_(2)Te_(4).Moreover,the above magnetic properties can be further improved by tuning the interlayer distance between h-BN and MnBi_(2)Te_(4).Additionally,the obtained band structures and topological properties clearly support that the h-BN/MnBi_(2)Te_(4)/hBN heterostructure can harbor the QAHE with a Chern number of C=1.This work provides a new and nonvolatile modulation approach to achieve high-temperature and high-precision QAHE at zero magnetic feld.展开更多
As a typical in-memory computing hardware design, nonvolatile ternary content-addressable memories(TCAMs) enable the logic operation and data storage for high throughout in parallel big data processing. However,TCAM c...As a typical in-memory computing hardware design, nonvolatile ternary content-addressable memories(TCAMs) enable the logic operation and data storage for high throughout in parallel big data processing. However,TCAM cells based on conventional silicon-based devices suffer from structural complexity and large footprintlimitations. Here, we demonstrate an ultrafast nonvolatile TCAM cell based on the MoTe2/hBN/multilayergraphene (MLG) van der Waals heterostructure using a top-gated partial floating-gate field-effect transistor(PFGFET) architecture. Based on its ambipolar transport properties, the carrier type in the source/drain andcentral channel regions of the MoTe2 channel can be efficiently tuned by the control gate and top gate, respectively,enabling the reconfigurable operation of the device in either memory or FET mode. When working inthe memory mode, it achieves an ultrafast 60 ns programming/erase speed with a current on-off ratio of ∼105,excellent retention capability, and robust endurance. When serving as a reconfigurable transistor, unipolar p-typeand n-type FETs are obtained by adopting ultrafast 60 ns control-gate voltage pulses with different polarities.The monolithic integration of memory and logic within a single device enables the content-addressable memory(CAM) functionality. Finally, by integrating two PFGFETs in parallel, a TCAM cell with a high current ratioof ∼10^(5) between the match and mismatch states is achieved without requiring additional peripheral circuitry.These results provide a promising route for the design of high-performance TCAM devices for future in-memorycomputing applications.展开更多
Emerging memristive devices offer enormous advantages for applications such as non-volatile memories and inmemory computing(IMC),but there is a rising interest in using memristive technologies for security application...Emerging memristive devices offer enormous advantages for applications such as non-volatile memories and inmemory computing(IMC),but there is a rising interest in using memristive technologies for security applications in the era of internet of things(IoT).In this review article,for achieving secure hardware systems in IoT,lowpower design techniques based on emerging memristive technology for hardware security primitives/systems are presented.By reviewing the state-of-the-art in three highlighted memristive application areas,i.e.memristive non-volatile memory,memristive reconfigurable logic computing and memristive artificial intelligent computing,their application-level impacts on the novel implementations of secret key generation,crypto functions and machine learning attacks are explored,respectively.For the low-power security applications in IoT,it is essential to understand how to best realize cryptographic circuitry using memristive circuitries,and to assess the implications of memristive crypto implementations on security and to develop novel computing paradigms that will enhance their security.This review article aims to help researchers to explore security solutions,to analyze new possible threats and to develop corresponding protections for the secure hardware systems based on low-cost memristive circuit designs.展开更多
Si-doped Ge2Sb2Te5 films have been prepared by dc magnetron co-sputtering with Ge2Sb2Te5 and Si targets. The addition of Si in the Ge2Sb2Te5 film results in the increase of both crystallization temperature and phasetr...Si-doped Ge2Sb2Te5 films have been prepared by dc magnetron co-sputtering with Ge2Sb2Te5 and Si targets. The addition of Si in the Ge2Sb2Te5 film results in the increase of both crystallization temperature and phasetransition temperature from face-centred-cubic （fcc） phase to hexagonal （hex） phase. The resistivity of the Ge2Sb2Te5 film shows a significant increase with the Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460℃ annealing increases from 1 to 11 mΩ.cm and dynamic resistance increase from 64 to 99Ω compared to the undoped Ge2Sb2Te5 film. This is very helpful to writing current reduction of phase-change random access memory.展开更多
We have grown triply doped Mg:Fe:Mn:LiTaO3 crystals with near stoichiometry using the top seeded solution growth technique. The defect structure was investigated by infrared absorption spectra and Curie temperature. U...We have grown triply doped Mg:Fe:Mn:LiTaO3 crystals with near stoichiometry using the top seeded solution growth technique. The defect structure was investigated by infrared absorption spectra and Curie temperature. Using a blue laser as the source, excellent photorefractive properties were obtained. Nonvolatile holographic storage properties were investigated using the dual wavelength technique. We got a very high fixed diffraction efficiency and nonvolatile holographic storage sensitivity. The blue light has more than enough energy to excite holes of deep(Mn) and shallow(Fe) trap centers with the same phase, which enhance dramatically the blue photorefractive properties and the nonvolatile holographic storage. Mg2+ ion is no longer damage resistant at blue laser, but enhances photorefractive characteristics.展开更多
It has been suggested to use LiNbO3：Fe,Mn crystal for solving the problem of information volatility during the read-out process with all-optical facilities,but the minute order response time is far from the requireme...It has been suggested to use LiNbO3：Fe,Mn crystal for solving the problem of information volatility during the read-out process with all-optical facilities,but the minute order response time is far from the requirements for the real-time information processing.We present the nonvolatile holographic storage properties of LiNbO3：Hf,Fe,Mn.The response time is shortened to 5.0 s,and the sensitivity S is enhanced to 0.22 cm/J in this triply doped crystal.The experimental results show that the HfO2 doping threshold is 5.0 mol.%.Thus it seems that we have found a useful tetravalent dopant for LiNbO3：Fe,Mn that can obviously improve the nonvolatile holographic recording sensitivity.展开更多
Ferroelectrics have great potential in the field of nonvolatile memory due to programmable polarization states by external electric field in nonvolatile manner.However,complementary metal oxide semiconductor compatibi...Ferroelectrics have great potential in the field of nonvolatile memory due to programmable polarization states by external electric field in nonvolatile manner.However,complementary metal oxide semiconductor compatibility and uniformity of ferroelectric performance after size scaling have always been two thorny issues hindering practical application of ferroelectric memory devices.The emerging ferroelectricity of wurtzite structure nitride offers opportunities to circumvent the dilemma.This review covers the mechanism of ferroelectricity and domain dynamics in ferroelectric AlScN films.The performance optimization of AlScN films grown by different techniques is summarized and their applications for memories and emerging in-memory computing are illustrated.Finally,the challenges and perspectives regarding the commercial avenue of ferroelectric AlScN are discussed.展开更多
A novel surface-type nonvolatile electric memory elements based on organic semiconductors CuPc and H2Pc are fabricated by vacuum deposition of the CuPc and H2Pc films on preliminary deposited metallic （Ag and Cu） el...A novel surface-type nonvolatile electric memory elements based on organic semiconductors CuPc and H2Pc are fabricated by vacuum deposition of the CuPc and H2Pc films on preliminary deposited metallic （Ag and Cu） electrodes. The gap between Ag and Cu electrodes is 3040μm. For the current-voltage （I-V） characteristics the memory effect, switching effect, and negative differential resistance regions are observed. The switching mechanism is attributed to the electric-field-induced charge transfer. As a result the device switches from a low to a high-conductivity state and then back to a low conductivity state if the opposite polarity voltage is applied. The ratio of resistance at the high resistance state to that at the low resistance state is equal to 120-150. Under the switching condition, the electric current increases -- 80-100 times. A comparison between the forward and reverse I-V characteristics shows the presence of rectifying behavior.展开更多
In this paper, a WO3-based resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room tempe...In this paper, a WO3-based resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature. The reproducible resistive switching, low power consumption, multilevel storage possibility, and good data retention characteristics demonstrate that the Cu/WO3/Pt memory device is very promising for future nonvolatile memory applications. The formation and rupture of localised conductive filaments is suggested to be responsible for the observed resistive switching behaviours.展开更多
Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm depo...Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.展开更多
Polycrystalline LaCrO3（LCO） thin films are deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition and used as the switching material to construct resistive random access memory devices. The unipolar resist...Polycrystalline LaCrO3（LCO） thin films are deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition and used as the switching material to construct resistive random access memory devices. The unipolar resistive switching（RS） behavior in the Au/LCO/Pt devices exhibits a high resistance ratio of ~104 between the high resistance state（HRS） and low resistance state（LRS） and exhibits excellent endurance/retention characteristics.The conduction mechanism of the HRS in the high voltage range is dominated by the Schottky emission, while the Ohmic conduction dictates the LRS and the low voltage range of HRS. The RS behavior in the Au/LCO/Pt devices can be understood by the formation and rupture of conducting filaments consisting of oxygen vacancies,which is validated by the temperature dependence of resistance and x-ray photoelectron spectroscopy results.Further analysis shows that the reset current IR and reset power PR in the reset processes exhibit a scaling law with the resistance in LRS（R0）, which indicates that the Joule heating effect plays an essential role in the RS behavior of the Au/LCO/Pt devices.展开更多
Mg：Ru：Fe：LiN-bO3 crystals with various concentrations of MgO （in mole） and fixed content of RuO2 and Fe203 （in mass） are grown with the Czochralski method from the congruent melt. Their infrared transmission sp...Mg：Ru：Fe：LiN-bO3 crystals with various concentrations of MgO （in mole） and fixed content of RuO2 and Fe203 （in mass） are grown with the Czochralski method from the congruent melt. Their infrared transmission spectra are mea- sured and discussed to investigate the defect structure. With the increase of Mg2＋ concentration the blue nonvolatile holographic storage capability is enhanced. The nonvolatile holographic storage properties of dual-wavelength recording of Mg（7 mol%）：Ru：Fe：LiNbO3 nonvolatile diffraction efficiency, response time, and nonvolatile sensitivity reach 59.8%, 70 s, and 1.04 cm/J, respectively. Comparing Mg（7 mol%）：Ru：Fe：LiNbO3 with Ru：Fe：LiNbO3 crystal, the response time is shortened apparently. The nonvolatile diffraction efficiency and sensitivity are raised largely. The mechanism in blue photorefractive nonvolatile holographic storage is discussed.展开更多
Demands for low-energy microcontrollers have been increasing in recent years. Since most microcontrollers achieve user programmability by integrating nonvolatile (NV) memories such as flash memories for storing their ...Demands for low-energy microcontrollers have been increasing in recent years. Since most microcontrollers achieve user programmability by integrating nonvolatile (NV) memories such as flash memories for storing their programs, the large power consumption required in accessing an NV memory has become a major problem. This problem becomes critical when the power supply voltage of NV microcontrollers is decreased. We can solve this problem by introducing an instruction cache, thus reducing the access frequency of the NV memory. Unlike general-purpose microprocessors, microcontrollers used for real-time applications in embedded systems must accurately calculate program execution time prior to its execution. Therefore, we introduce a “transparent” instruction cache, which does not change the existing NV microcontroller’s cycle-level execution time, for reducing power and energy consumption, but not for improving the processing speed. We have conducted detailed microar chitecture design based on the architecture of a major industrial microcontroller, and we evaluated power and energy consumption for several benchmark programs. Our evaluation shows that the proposed instruction cache can successfully reduce energy consumption in a fairly wide range of practical NV microcontroller configurations.展开更多
Materials with a high on-off resistance ratio could become the basis for resistive random-access memory (RRAM). It is assumed that one of RRAM types can be based on hybrid organic-inorganic systems, while particular a...Materials with a high on-off resistance ratio could become the basis for resistive random-access memory (RRAM). It is assumed that one of RRAM types can be based on hybrid organic-inorganic systems, while particular attention is focused on hybrid systems consisting of metal nanoparticles (NP) embedded in organic matrix (OM). In this investigation we created and studied the hybrid organic-inorganic systems made of metal (Ag) nanoparticles embedded in organic semiconductor material CuPc. The LEED patterns and NEXAFS data demonstrate that the CuPc films deposited on Au(001) substrate are highly ordered and molecular planes lie parallel to the gold surface. The metal atoms were deposited on the outer surface of the organic molecular film and self-assembled into nanoparticles due to surface and bulk diffusion. The properties of nano-composite materials seem to be significantly dependent on the microstructure, i.e. the size, concentration, bulk- and size-distribution of nanoparticles;therefore we have studied by high resolution transmission electron microscopy the evolution of morphology of nano-composite films as a function of nominal metal deposition. The filled and empty electronic states of the hybrid organic-inorganic systems, energy level alignment at interfaces formed between metal nanoparticles and the organic semiconductor CuPc as well as the chemical interaction at the NP/OM interface were studied by UPS, XPS and NEXAFS methods.展开更多
IEEE J.Solid-State Circuits,2019,doi:10.1109/JSSC.2018.2884349Nonvolatile processor(NVP)is promising for energy-harvesting-powered internet-of-things(IoT)devices,owing to its unique capability to sustain computation p...IEEE J.Solid-State Circuits,2019,doi:10.1109/JSSC.2018.2884349Nonvolatile processor(NVP)is promising for energy-harvesting-powered internet-of-things(IoT)devices,owing to its unique capability to sustain computation progress over power outages.Recently.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.62341305,61805053,and 22269002)the Science and Technology Project of Guangxi Zhuang Autonomous Region,China(Grant Nos.AD19110038 and AD21238033)。
文摘A facile sol–gel method and heating treatment process have been reported to synthesize the wurtzite phase ZnO nanofilms with the preferential growth orientation along the[001]direction on the FTO substrates.The as-prepared wurtzite phase ZnO nanofilms-based memristor with the W/ZnO/FTO sandwich has demonstrated a reliable nonvolatile bipolar resistive switching behaviors with an ultralow set voltage of about +3 V and reset voltage of approximately-3.6 V,high resistive switching ratio of more than two orders of magnitude,good resistance retention ability(up to 10^(4)s),and excellent durability.Furthermore,the resistive switching behavior in the low-resistance state is attributed to the Ohmic conduction mechanism,while the resistive switching behavior in the high-resistance state is controlled by the trap-modulated space charge limited current(SCLC)mechanism.In addition,the conductive filament model regulated by the oxygen vacancies has been proposed,where the nonvolatile bipolar resistive switching behaviors could be attributed to the formation and rupture of conductive filaments in the W/ZnO/FTO memristor.This work demonstrates that the as-prepared wurtzite phase ZnO nanofilms-based W/ZnO/FTO memristor has promising prospects in future nonvolatile memory applications.
基金support from the National Key Research and Development Program of China(Grant nos.2024YFA1409700 and 2023YFA1407000)the National Natural Science Foundation of China(Grant no.62374158).
文摘In recent years,as the dimensions of the conventional semiconductor technology is approaching the physical limits,while the multifunction circuits are restricted by the relatively fixed characteristics of the traditional metal−oxide−semiconductor field-effect transistors,reconfigurable devices that can realize reconfigurable characteristics and multiple functions at device level have been seen as a promising method to improve integration density and reduce power consumption.Owing to the ultrathin structure,effective control of the electronic characteristics and ability to modulate structural defects,two-dimensional(2D)materials have been widely used to fabricate reconfigurable devices.In this review,we summarize the working principles and related logic applications of reconfigurable devices based on 2D materials,including generating tunable anti-ambipolar responses and demonstrating nonvolatile operations.Furthermore,we discuss the analog signal processing applications of anti-ambipolar transistors and the artificial intelligence hardware implementations based on reconfigurable transistors and memristors,respectively,therefore highlighting the outstanding advantages of reconfigurable devices in footprint,energy consumption and performance.Finally,we discuss the challenges of the 2D materials-based reconfigurable devices.
基金supported by the National Natural Science Foundation of China(Grant Nos.12074213,11574108,and 12104253)the National Key R&D Program of China(Grant No.2022YFA1403103)+2 种基金the Major Basic Program of the Natural Science Foundation of Shandong Province(Grant No.ZR2021ZD01)the Natural Science Foundation of Shandong Provincial(Grant No.ZR2023MA082)the Project of Introduction and Cultivation for Young Innovative Talents in Colleges and Universities of Shandong Province。
文摘Ferromagnetic materials play an important role in memory materials,but conventional control methods are often limited by issues such as high power consumption and volatility.Multiferroic heterostructures provide a promising alternative to achieve low power consumption and nonvolatile electric control of magnetic properties.In this paper,a two-dimensional multiferroic van der Waals heterostructure OsCl_(2)/Sc_(2)CO_(2),which is composed of ferromagnetic monolayer OsCl_(2)and ferroelectric monolayer Sc_(2)CO_(2),is studied by first-principles density functional theory.The results show that by reversing the direction of the electric polarization of Sc_(2)CO_(2),OsCl_(2)can be transformed from a semiconductor to a half-metal,demonstrating a nonvolatile electrical manipulation of the heterostructure through ferroelectric polarization.The underlying physical mechanism is explained by band alignments and charge density differences.Furthermore,based on the heterostructure,we construct a multiferroic tunnel junction with a tunnel electroresistance ratio of 3.38×10^(14)%and a tunnel magnetoresistance ratio of 5.04×10^(6)%,allowing control of conduction states via instantaneous electric or magnetic fields.The findings provide a feasible strategy for designing advanced nanodevices based on the giant tunnel electroresistance and tunnel magnetoresistance effects.
基金supported by the National Natural Science Foundation of China(Grant Nos.62174016,12474047,12204202,and 11974355)the Basic Research Program of Jiangsu(Grant No.BK20220679)+1 种基金the Fund for Shanxi“1331Project”the Research Project Supported by Shanxi Scholarship Council of China.
文摘The presence of a van Hove singularity(vHS)at the Fermi level can trigger magnetic instability by mediating a spontaneous transition from paramagnetic to magnetically ordered states.While electrostatic doping(typically achieved via ionic gating)to shift the vHS to the Fermi level provides a general mechanism for engineering such magnetism,its volatile nature often leads to the collapse of induced states upon gate field removal.Here,a novel scheme is presented for non-volatile magnetic control by utilizing ferroelectric heterostructures to achieve reversible magnetism switching.Using two-dimensional VSiN_(3),a nonmagnetic material with Mexican-hat electronic band dispersions hosting vHSs,as a prototype,it is preliminarily demonstrated that both electron and hole doping can robustly induce magnetism.Further,by interfacing VSiN_(3)with ferroelectric Sc_(2)CO_(2),reversible switching of its magnetic state via polarization-driven heterointerfacial charge transfer is achieved.This mechanism enables a dynamic transition between insulating and half-metallic phases in VSiN_(3),establishing a pathway to design multiferroic tunnel junctions with giant tunneling electroresistance or magnetoresistance.This work bridges non-volatile ferroelectric control with vHS-enhanced magnetism,opening opportunities for energy-efficient and high-performance spintronic devices and non-volatile memory devices.
基金supported by the National Key R&D Program of China(Grant No.2024YFA1408103)National Natural Science Foundation of China(Grants No.11974098,12474158,12234017 and 12488101)+3 种基金Innovation Program for Quantum Science and Technology(Grant No.2021ZD0302800)Natural Science Foundation of Hebei Province(Grant No.A202305017)Anhui Initiative in Quantum Information Technologies(Grant No.AHY170000)Fundamental Research Funds for the Central Universities(Grant No.WK2340000082)。
文摘Interlayer antiferromagnetic coupling,small magnetic anisotropy,and low air stability of the intrinsic magnetic topological insulator MnBi_(2)Te_(4)have been critical bottlenecks to the future application of the quantum anomalous Hall efect(QAHE)at zero magnetic feld.In this study,we propose a scheme to utilize capped sliding van der Waals materials to efectively modulate the magnetic and topological properties of MnBi_(2)Te_(4).Our results demonstrate that the h-BN/MnBi_(2)Te_(4)/h-BN heterostructure,constructed by sliding ferroelectric h-BN bilayer and MnBi_(2)Te_(4),not only realizes a transition from interlayer antiferromagnetic to ferromagnetic coupling but also signifcantly enhances the out-of-plane magnetism and air stability of MnBi_(2)Te_(4).Moreover,the above magnetic properties can be further improved by tuning the interlayer distance between h-BN and MnBi_(2)Te_(4).Additionally,the obtained band structures and topological properties clearly support that the h-BN/MnBi_(2)Te_(4)/hBN heterostructure can harbor the QAHE with a Chern number of C=1.This work provides a new and nonvolatile modulation approach to achieve high-temperature and high-precision QAHE at zero magnetic feld.
基金supported by the National Key Research&Development Projects of China(Grant No.2022YFA1204100)National Natural Science Foundation of China(Grant No.62488201)+1 种基金CAS Project for Young Scientists in Basic Research(YSBR-003)the Innovation Program of Quantum Science and Technology(2021ZD0302700)。
文摘As a typical in-memory computing hardware design, nonvolatile ternary content-addressable memories(TCAMs) enable the logic operation and data storage for high throughout in parallel big data processing. However,TCAM cells based on conventional silicon-based devices suffer from structural complexity and large footprintlimitations. Here, we demonstrate an ultrafast nonvolatile TCAM cell based on the MoTe2/hBN/multilayergraphene (MLG) van der Waals heterostructure using a top-gated partial floating-gate field-effect transistor(PFGFET) architecture. Based on its ambipolar transport properties, the carrier type in the source/drain andcentral channel regions of the MoTe2 channel can be efficiently tuned by the control gate and top gate, respectively,enabling the reconfigurable operation of the device in either memory or FET mode. When working inthe memory mode, it achieves an ultrafast 60 ns programming/erase speed with a current on-off ratio of ∼105,excellent retention capability, and robust endurance. When serving as a reconfigurable transistor, unipolar p-typeand n-type FETs are obtained by adopting ultrafast 60 ns control-gate voltage pulses with different polarities.The monolithic integration of memory and logic within a single device enables the content-addressable memory(CAM) functionality. Finally, by integrating two PFGFETs in parallel, a TCAM cell with a high current ratioof ∼10^(5) between the match and mismatch states is achieved without requiring additional peripheral circuitry.These results provide a promising route for the design of high-performance TCAM devices for future in-memorycomputing applications.
基金supported by the DFG(German Research Foundation)Priority Program Nano Security,Project MemCrypto(Projektnummer 439827659/funding id DU 1896/2–1,PO 1220/15–1)the funding by the Fraunhofer Internal Programs under Grant No.Attract 600768。
文摘Emerging memristive devices offer enormous advantages for applications such as non-volatile memories and inmemory computing(IMC),but there is a rising interest in using memristive technologies for security applications in the era of internet of things(IoT).In this review article,for achieving secure hardware systems in IoT,lowpower design techniques based on emerging memristive technology for hardware security primitives/systems are presented.By reviewing the state-of-the-art in three highlighted memristive application areas,i.e.memristive non-volatile memory,memristive reconfigurable logic computing and memristive artificial intelligent computing,their application-level impacts on the novel implementations of secret key generation,crypto functions and machine learning attacks are explored,respectively.For the low-power security applications in IoT,it is essential to understand how to best realize cryptographic circuitry using memristive circuitries,and to assess the implications of memristive crypto implementations on security and to develop novel computing paradigms that will enhance their security.This review article aims to help researchers to explore security solutions,to analyze new possible threats and to develop corresponding protections for the secure hardware systems based on low-cost memristive circuit designs.
文摘Si-doped Ge2Sb2Te5 films have been prepared by dc magnetron co-sputtering with Ge2Sb2Te5 and Si targets. The addition of Si in the Ge2Sb2Te5 film results in the increase of both crystallization temperature and phasetransition temperature from face-centred-cubic （fcc） phase to hexagonal （hex） phase. The resistivity of the Ge2Sb2Te5 film shows a significant increase with the Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460℃ annealing increases from 1 to 11 mΩ.cm and dynamic resistance increase from 64 to 99Ω compared to the undoped Ge2Sb2Te5 film. This is very helpful to writing current reduction of phase-change random access memory.
基金Project supported by the National Natural Science Foundation of China （Grant No. 51202045）, the Postdoctoral Science Foundation of Heilongjiang Province, China, and the Fundamental Research Funds for the Central Universities of Ministry of Education of China （Grant No. HIT. NSRIF. 2013004）.
文摘We have grown triply doped Mg:Fe:Mn:LiTaO3 crystals with near stoichiometry using the top seeded solution growth technique. The defect structure was investigated by infrared absorption spectra and Curie temperature. Using a blue laser as the source, excellent photorefractive properties were obtained. Nonvolatile holographic storage properties were investigated using the dual wavelength technique. We got a very high fixed diffraction efficiency and nonvolatile holographic storage sensitivity. The blue light has more than enough energy to excite holes of deep(Mn) and shallow(Fe) trap centers with the same phase, which enhance dramatically the blue photorefractive properties and the nonvolatile holographic storage. Mg2+ ion is no longer damage resistant at blue laser, but enhances photorefractive characteristics.
基金Project supported by the National Advanced Materials Committee of China (Grant No. 2007AA03Z459)Shanxi Provincial Technology Project for Higher Education,China (Grant No. 20091105)
文摘It has been suggested to use LiNbO3：Fe,Mn crystal for solving the problem of information volatility during the read-out process with all-optical facilities,but the minute order response time is far from the requirements for the real-time information processing.We present the nonvolatile holographic storage properties of LiNbO3：Hf,Fe,Mn.The response time is shortened to 5.0 s,and the sensitivity S is enhanced to 0.22 cm/J in this triply doped crystal.The experimental results show that the HfO2 doping threshold is 5.0 mol.%.Thus it seems that we have found a useful tetravalent dopant for LiNbO3：Fe,Mn that can obviously improve the nonvolatile holographic recording sensitivity.
基金fundings of National Natural Science Foundation of China(No.T2222025,62174053 and 61804055)National Key Research and Development program of China(No.2021YFA1200700)+1 种基金Shanghai Science and Technology Innovation Action Plan(No.21JC1402000 and 21520714100)the Fundamental Research Funds for the Central Universities.
文摘Ferroelectrics have great potential in the field of nonvolatile memory due to programmable polarization states by external electric field in nonvolatile manner.However,complementary metal oxide semiconductor compatibility and uniformity of ferroelectric performance after size scaling have always been two thorny issues hindering practical application of ferroelectric memory devices.The emerging ferroelectricity of wurtzite structure nitride offers opportunities to circumvent the dilemma.This review covers the mechanism of ferroelectricity and domain dynamics in ferroelectric AlScN films.The performance optimization of AlScN films grown by different techniques is summarized and their applications for memories and emerging in-memory computing are illustrated.Finally,the challenges and perspectives regarding the commercial avenue of ferroelectric AlScN are discussed.
基金supported by the GIK Institute of Engineering Science and Technology,Pakistan and Physical Technical Institute of Academy of Sciences of Tajikistan
文摘A novel surface-type nonvolatile electric memory elements based on organic semiconductors CuPc and H2Pc are fabricated by vacuum deposition of the CuPc and H2Pc films on preliminary deposited metallic （Ag and Cu） electrodes. The gap between Ag and Cu electrodes is 3040μm. For the current-voltage （I-V） characteristics the memory effect, switching effect, and negative differential resistance regions are observed. The switching mechanism is attributed to the electric-field-induced charge transfer. As a result the device switches from a low to a high-conductivity state and then back to a low conductivity state if the opposite polarity voltage is applied. The ratio of resistance at the high resistance state to that at the low resistance state is equal to 120-150. Under the switching condition, the electric current increases -- 80-100 times. A comparison between the forward and reverse I-V characteristics shows the presence of rectifying behavior.
基金Project supported by the National Basic Research Program of China(Grant Nos.2008CB925002 and 2010CB934200)the National Natural Science Foundation of China(Grant Nos.60825403 and 50972160)the National High Technology Research and Development Program of China(Grant No.2009AA03Z306)
文摘In this paper, a WO3-based resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature. The reproducible resistive switching, low power consumption, multilevel storage possibility, and good data retention characteristics demonstrate that the Cu/WO3/Pt memory device is very promising for future nonvolatile memory applications. The formation and rupture of localised conductive filaments is suggested to be responsible for the observed resistive switching behaviours.
基金Supported by the Chinese Academy of Sciences （Y2005027）, the Science and Technology Council of Shanghai （AM0517, 0452nm012, 04DZ05612, 04ZR14154, 04JC14080, 05JC14076, AM0414, 05nm05043）, the China Postdoctoral Science Foundation, and the K. C. Wong Education Foundation （Hong Kong）.
文摘Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.
基金Supported by the Joint Funds of the National Natural Science Foundation of China and the Chinese Academy of Sciences’Large-Scale Scientific Facility under Grant No U1532149the National Basic Research Program of China under Grant No2014CB931704
文摘Polycrystalline LaCrO3（LCO） thin films are deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition and used as the switching material to construct resistive random access memory devices. The unipolar resistive switching（RS） behavior in the Au/LCO/Pt devices exhibits a high resistance ratio of ~104 between the high resistance state（HRS） and low resistance state（LRS） and exhibits excellent endurance/retention characteristics.The conduction mechanism of the HRS in the high voltage range is dominated by the Schottky emission, while the Ohmic conduction dictates the LRS and the low voltage range of HRS. The RS behavior in the Au/LCO/Pt devices can be understood by the formation and rupture of conducting filaments consisting of oxygen vacancies,which is validated by the temperature dependence of resistance and x-ray photoelectron spectroscopy results.Further analysis shows that the reset current IR and reset power PR in the reset processes exhibit a scaling law with the resistance in LRS（R0）, which indicates that the Joule heating effect plays an essential role in the RS behavior of the Au/LCO/Pt devices.
基金Project supported by the Fundamental Research Funds for the Central Universities of China (Grant No. DL12AB03)the National Natural Science Founda-tion of China (Grant No. 60777006)
文摘Mg：Ru：Fe：LiN-bO3 crystals with various concentrations of MgO （in mole） and fixed content of RuO2 and Fe203 （in mass） are grown with the Czochralski method from the congruent melt. Their infrared transmission spectra are mea- sured and discussed to investigate the defect structure. With the increase of Mg2＋ concentration the blue nonvolatile holographic storage capability is enhanced. The nonvolatile holographic storage properties of dual-wavelength recording of Mg（7 mol%）：Ru：Fe：LiNbO3 nonvolatile diffraction efficiency, response time, and nonvolatile sensitivity reach 59.8%, 70 s, and 1.04 cm/J, respectively. Comparing Mg（7 mol%）：Ru：Fe：LiNbO3 with Ru：Fe：LiNbO3 crystal, the response time is shortened apparently. The nonvolatile diffraction efficiency and sensitivity are raised largely. The mechanism in blue photorefractive nonvolatile holographic storage is discussed.
文摘Demands for low-energy microcontrollers have been increasing in recent years. Since most microcontrollers achieve user programmability by integrating nonvolatile (NV) memories such as flash memories for storing their programs, the large power consumption required in accessing an NV memory has become a major problem. This problem becomes critical when the power supply voltage of NV microcontrollers is decreased. We can solve this problem by introducing an instruction cache, thus reducing the access frequency of the NV memory. Unlike general-purpose microprocessors, microcontrollers used for real-time applications in embedded systems must accurately calculate program execution time prior to its execution. Therefore, we introduce a “transparent” instruction cache, which does not change the existing NV microcontroller’s cycle-level execution time, for reducing power and energy consumption, but not for improving the processing speed. We have conducted detailed microar chitecture design based on the architecture of a major industrial microcontroller, and we evaluated power and energy consumption for several benchmark programs. Our evaluation shows that the proposed instruction cache can successfully reduce energy consumption in a fairly wide range of practical NV microcontroller configurations.
文摘Materials with a high on-off resistance ratio could become the basis for resistive random-access memory (RRAM). It is assumed that one of RRAM types can be based on hybrid organic-inorganic systems, while particular attention is focused on hybrid systems consisting of metal nanoparticles (NP) embedded in organic matrix (OM). In this investigation we created and studied the hybrid organic-inorganic systems made of metal (Ag) nanoparticles embedded in organic semiconductor material CuPc. The LEED patterns and NEXAFS data demonstrate that the CuPc films deposited on Au(001) substrate are highly ordered and molecular planes lie parallel to the gold surface. The metal atoms were deposited on the outer surface of the organic molecular film and self-assembled into nanoparticles due to surface and bulk diffusion. The properties of nano-composite materials seem to be significantly dependent on the microstructure, i.e. the size, concentration, bulk- and size-distribution of nanoparticles;therefore we have studied by high resolution transmission electron microscopy the evolution of morphology of nano-composite films as a function of nominal metal deposition. The filled and empty electronic states of the hybrid organic-inorganic systems, energy level alignment at interfaces formed between metal nanoparticles and the organic semiconductor CuPc as well as the chemical interaction at the NP/OM interface were studied by UPS, XPS and NEXAFS methods.
文摘IEEE J.Solid-State Circuits,2019,doi:10.1109/JSSC.2018.2884349Nonvolatile processor(NVP)is promising for energy-harvesting-powered internet-of-things(IoT)devices,owing to its unique capability to sustain computation progress over power outages.Recently.
