The classical power law relaxation, i.e. relaxation of current with inverse of power of time for a step-voltage excitation to dielectric—as popularly known as Curie-von Schweidler law is empirically derived and is ob...The classical power law relaxation, i.e. relaxation of current with inverse of power of time for a step-voltage excitation to dielectric—as popularly known as Curie-von Schweidler law is empirically derived and is observed in several relaxation experiments on various dielectrics studies since late 19th Century. This relaxation law is also regarded as “universal-law” for dielectric relaxations;and is also termed as power law. This empirical Curie-von Schewidler relaxation law is then used to derive fractional differential equations describing constituent expression for capacitor. In this paper, we give simple mathematical treatment to derive the distribution of relaxation rates of this Curie-von Schweidler law, and show that the relaxation rate follows Zipf’s power law distribution. We also show the method developed here give Zipfian power law distribution for relaxing time constants. Then we will show however mathematically correct this may be, but physical interpretation from the obtained time constants distribution are contradictory to the Zipfian rate relaxation distribution. In this paper, we develop possible explanation that as to why Zipfian distribution of relaxation rates appears for Curie-von Schweidler Law, and relate this law to time variant rate of relaxation. In this paper, we derive appearance of fractional derivative while using Zipfian power law distribution that gives notion of scale dependent relaxation rate function for Curie-von Schweidler relaxation phenomena. This paper gives analytical approach to get insight of a non-Debye relaxation and gives a new treatment to especially much used empirical Curie-von Schweidler (universal) relaxation law.展开更多
The ability of BaTiO_(3)to form solid solutions with different dopants(both iso-and aliovalent)makes it versatile for various applications.In the present study,(Ba,Ca)TiO_(3)(BCT)is modified with Bi(MgTi)O_(3)(BMT)in ...The ability of BaTiO_(3)to form solid solutions with different dopants(both iso-and aliovalent)makes it versatile for various applications.In the present study,(Ba,Ca)TiO_(3)(BCT)is modified with Bi(MgTi)O_(3)(BMT)in search for new lead-free ferroelectric material and improve their properties.For this purpose,BCT acts as a main base material and BMT acts as a modifier to fabricate a multifunctional material.In this study,we report the structural and electrical properties of lead free piezo-ceramics(1-x)(Ba_(0.8)Ca_(0.2))TiO_(3–x)Bi(Mg_(0.5)Ti_(0.5))O_(3)with x=0.2,0.4,0.5 prepared by solid-state sintering technique.Single perovskite phase with tetragonal structure is obtained for all the compositions,which is reconfirmed by the Raman Spectroscopic study.Dielectric study confirm the temperature stable behavior of the dielectric permittivity values above 300℃.The dielectric constant value decreases with increase in BMT doping content.Impedance Spectroscopic study confirms non-Debye type dielectric relaxation in the specimen.The Nyquist plot and conductivity studies show the negative temperature coefficient of resistance behavior(NTCR)of the samples.展开更多
The present investigations mainly focused on the colossal dielectric response and complex impedance analysis of LaFeO3 ceramics.The studied sample was prepared by a citrate gel method.Structural and microstructural pr...The present investigations mainly focused on the colossal dielectric response and complex impedance analysis of LaFeO3 ceramics.The studied sample was prepared by a citrate gel method.Structural and microstructural properties are analyzed from the XRD pattern and SEM micrograph.The anomalies in the dielectric constant versus temperature plots are analyzed on the basis of polarization induced by the Maxwell-Wagner mechanisms and ferromagnetic interaction between the Fe3+ions driven by the oxygen vacancy mediated Fe^(3+)-Vo-Fe3+exchange interaction A giant dielectric permittivity in the order of~105 was observed in the sample even at the room temperature for 100 Hz.The colossal dielectric constant in LaFeO3 is mainly driven by the internal barrier layer capacitor(IBLC)formation.The formation of IBLC was explained on the basis of highly insulating grain boundary and less resistive/semiconducting grain,which was confirmed from both the resistance and capacitance of grain and grain boundary from the impedance analysis.The non-Debye-type relaxation process associated with the grain and grain boundary effect was investigated from the broad and asymmetric relaxation peak.The relaxation time for both the grain and grain boundary effect was also calculated.In addition to this,we have also analyzed the normalized bode plot of imaginary part of impedance and electrical modulus which suggests the relaxation process dominated by the short-range movement of charge carriers.展开更多
In this paper,we report the successful growth of 0.5BiFeO_(3)-0.5PbFe_(0.5)Nb_(0.5)O_(3)/SrTiO_(3)/Si(001)heterostructure using RFcathode sputtering in an oxygen atmosphere.The deposited films have been investigated b...In this paper,we report the successful growth of 0.5BiFeO_(3)-0.5PbFe_(0.5)Nb_(0.5)O_(3)/SrTiO_(3)/Si(001)heterostructure using RFcathode sputtering in an oxygen atmosphere.The deposited films have been investigated by X-ray diffractometry and spectroscopic ellip-sometry(SE).0.5BiFeO_(3)-0.5PbFe_(0.5)Nb_(0.5)O_(3)films on silicon substrates with a strontium titanate buffer layer are single-phase,polycrystalline with a texture in the 001 direction.The unit cell parameters calculated in the tetragonal approximation were c=4.005±0.001Å;a=3.995±0.001Å.The presence in the films of small unit cell deformation arising from different unit cells parameters of the film and substrate is observed.Dielectric properties and capacitance-voltage characteristics have been measured.The ellipsometric parameters have been obtained.展开更多
文摘The classical power law relaxation, i.e. relaxation of current with inverse of power of time for a step-voltage excitation to dielectric—as popularly known as Curie-von Schweidler law is empirically derived and is observed in several relaxation experiments on various dielectrics studies since late 19th Century. This relaxation law is also regarded as “universal-law” for dielectric relaxations;and is also termed as power law. This empirical Curie-von Schewidler relaxation law is then used to derive fractional differential equations describing constituent expression for capacitor. In this paper, we give simple mathematical treatment to derive the distribution of relaxation rates of this Curie-von Schweidler law, and show that the relaxation rate follows Zipf’s power law distribution. We also show the method developed here give Zipfian power law distribution for relaxing time constants. Then we will show however mathematically correct this may be, but physical interpretation from the obtained time constants distribution are contradictory to the Zipfian rate relaxation distribution. In this paper, we develop possible explanation that as to why Zipfian distribution of relaxation rates appears for Curie-von Schweidler Law, and relate this law to time variant rate of relaxation. In this paper, we derive appearance of fractional derivative while using Zipfian power law distribution that gives notion of scale dependent relaxation rate function for Curie-von Schweidler relaxation phenomena. This paper gives analytical approach to get insight of a non-Debye relaxation and gives a new treatment to especially much used empirical Curie-von Schweidler (universal) relaxation law.
文摘The ability of BaTiO_(3)to form solid solutions with different dopants(both iso-and aliovalent)makes it versatile for various applications.In the present study,(Ba,Ca)TiO_(3)(BCT)is modified with Bi(MgTi)O_(3)(BMT)in search for new lead-free ferroelectric material and improve their properties.For this purpose,BCT acts as a main base material and BMT acts as a modifier to fabricate a multifunctional material.In this study,we report the structural and electrical properties of lead free piezo-ceramics(1-x)(Ba_(0.8)Ca_(0.2))TiO_(3–x)Bi(Mg_(0.5)Ti_(0.5))O_(3)with x=0.2,0.4,0.5 prepared by solid-state sintering technique.Single perovskite phase with tetragonal structure is obtained for all the compositions,which is reconfirmed by the Raman Spectroscopic study.Dielectric study confirm the temperature stable behavior of the dielectric permittivity values above 300℃.The dielectric constant value decreases with increase in BMT doping content.Impedance Spectroscopic study confirms non-Debye type dielectric relaxation in the specimen.The Nyquist plot and conductivity studies show the negative temperature coefficient of resistance behavior(NTCR)of the samples.
基金supported by the Ministry of Science and Higher Education of the Russian Federation State task in the field of scientific activity,scientific project No.(0852-2020-0032)/(BAZ0110/20-3-07IF)。
文摘The present investigations mainly focused on the colossal dielectric response and complex impedance analysis of LaFeO3 ceramics.The studied sample was prepared by a citrate gel method.Structural and microstructural properties are analyzed from the XRD pattern and SEM micrograph.The anomalies in the dielectric constant versus temperature plots are analyzed on the basis of polarization induced by the Maxwell-Wagner mechanisms and ferromagnetic interaction between the Fe3+ions driven by the oxygen vacancy mediated Fe^(3+)-Vo-Fe3+exchange interaction A giant dielectric permittivity in the order of~105 was observed in the sample even at the room temperature for 100 Hz.The colossal dielectric constant in LaFeO3 is mainly driven by the internal barrier layer capacitor(IBLC)formation.The formation of IBLC was explained on the basis of highly insulating grain boundary and less resistive/semiconducting grain,which was confirmed from both the resistance and capacitance of grain and grain boundary from the impedance analysis.The non-Debye-type relaxation process associated with the grain and grain boundary effect was investigated from the broad and asymmetric relaxation peak.The relaxation time for both the grain and grain boundary effect was also calculated.In addition to this,we have also analyzed the normalized bode plot of imaginary part of impedance and electrical modulus which suggests the relaxation process dominated by the short-range movement of charge carriers.
基金The study was carried out with the financial support of the Ministry of Science and Higher Education of the Russian Federation(State task in the field of scientific activity,scientific project No.(0852-2020-0032)/(BAZ0110/20-3-07IF)).
文摘In this paper,we report the successful growth of 0.5BiFeO_(3)-0.5PbFe_(0.5)Nb_(0.5)O_(3)/SrTiO_(3)/Si(001)heterostructure using RFcathode sputtering in an oxygen atmosphere.The deposited films have been investigated by X-ray diffractometry and spectroscopic ellip-sometry(SE).0.5BiFeO_(3)-0.5PbFe_(0.5)Nb_(0.5)O_(3)films on silicon substrates with a strontium titanate buffer layer are single-phase,polycrystalline with a texture in the 001 direction.The unit cell parameters calculated in the tetragonal approximation were c=4.005±0.001Å;a=3.995±0.001Å.The presence in the films of small unit cell deformation arising from different unit cells parameters of the film and substrate is observed.Dielectric properties and capacitance-voltage characteristics have been measured.The ellipsometric parameters have been obtained.
