The no-heating deposition of(111)-oriented epitaxial(Hf_(0.5)Zr_(0.5)O_(2) films was successfully achieved on(111)indium tin oxide//(111)yttria-stabilized zirconia substrates using a radio-frequency(RF)magnetron sputt...The no-heating deposition of(111)-oriented epitaxial(Hf_(0.5)Zr_(0.5)O_(2) films was successfully achieved on(111)indium tin oxide//(111)yttria-stabilized zirconia substrates using a radio-frequency(RF)magnetron sputtering method.As the RF power density was increased,the crystal phase changed sequentially from the tetragonal,the orthorhombic,and then to the monoclinic phase.A similar trend in the crystal phase was also observed with increasing film thickness.The(Hf_(0.5)Zr_(0.5)O_(2) film exhibited ferroelectric properties comparable to the(Y_(0.07)Hf_(0.93))O_(2) film previously produced via non-heating film deposition.Upon heat treatment at 1000℃,the crystal phase of the film transitioned from the orthorhombic phase to the monoclinic phase,indicating that the stability of the orthorhombic phase is low compared with(Y_(0.07)Hf_(0.93))O_(2).Therefore,precise control of the RF power density and film thickness is essential for preparing ferroelectric(Hf_(0.5)Zr_(0.5)O_(2) films without heating.展开更多
基金Data Creation and Utilization Type Material Research and Development Project(Grant No.JPMXP1122683430)MEXT Initiative to Establish Next-generation Novel Integrated Circuits Centers(X-NICS)(Grant No.JPJ011438)+1 种基金Japan Society for the Promotion of Science(JSPS)KAKENHI(Grant No.JP22K18307,JP24H00375,and 25K17637)Japan Science and Technology Agency as part of Adopting Sustainable Partnerships for Innovative Research Ecosystem(ASPIRE)(Grant No.JPMJAP2312).
文摘The no-heating deposition of(111)-oriented epitaxial(Hf_(0.5)Zr_(0.5)O_(2) films was successfully achieved on(111)indium tin oxide//(111)yttria-stabilized zirconia substrates using a radio-frequency(RF)magnetron sputtering method.As the RF power density was increased,the crystal phase changed sequentially from the tetragonal,the orthorhombic,and then to the monoclinic phase.A similar trend in the crystal phase was also observed with increasing film thickness.The(Hf_(0.5)Zr_(0.5)O_(2) film exhibited ferroelectric properties comparable to the(Y_(0.07)Hf_(0.93))O_(2) film previously produced via non-heating film deposition.Upon heat treatment at 1000℃,the crystal phase of the film transitioned from the orthorhombic phase to the monoclinic phase,indicating that the stability of the orthorhombic phase is low compared with(Y_(0.07)Hf_(0.93))O_(2).Therefore,precise control of the RF power density and film thickness is essential for preparing ferroelectric(Hf_(0.5)Zr_(0.5)O_(2) films without heating.
