Two-dimensional(2D)transition metal dichalcogenides(TMDs),endowed with exceptional light-matter interaction strength,have become a pivotal platform in advanced optoelectronics,enabling atomically precise control of ex...Two-dimensional(2D)transition metal dichalcogenides(TMDs),endowed with exceptional light-matter interaction strength,have become a pivotal platform in advanced optoelectronics,enabling atomically precise control of excitonic phenomena and offering transformative potential for engineering next-generation optoelectronic devices.In contrast to the narrowband absorption characteristics of conventional band-edge excitons,which are limited by the bandgap energy,highenergy excitons not only demonstrate broad momentum matching capability in the ultraviolet regime due to band nesting effects,but also exhibit distinct absorption peak signatures owing to robust excitonic stabilization under 2D confinement.These unique photophysical properties have established such systems as a prominent research frontier in contemporary exciton physics.This review primarily outlines the distinctive physical characteristics of high-energy excitons in TMDs from the perspectives of band structure,excitonic characteristics,and optical properties.Subsequently,we systematically delineate cutting-edge developments in TMD-based photonic devices exploiting high-energy excitonic band-nesting phenomena,with dedicated emphasis on the strategic engineering of nanoscale heterostructures for tailored optoelectronic functionality.Finally,the discussion concludes with an examination of the challenges associated with the design of high-energy exciton devices and their potential future applications.展开更多
基金Project supported by the National Natural Science Foundation Fund for Distinguished Young Scholars(Grant No.52025022)the National Natural Science Foundation of China(Grant Nos.62574038,12474421,62275045,and 12074060)+1 种基金the National Key R&D Program of China(Grant No.2023YFB3610200)the Fund from Jilin Province(Grant Nos.JJKH20241413KJ and 20240601049RC)。
文摘Two-dimensional(2D)transition metal dichalcogenides(TMDs),endowed with exceptional light-matter interaction strength,have become a pivotal platform in advanced optoelectronics,enabling atomically precise control of excitonic phenomena and offering transformative potential for engineering next-generation optoelectronic devices.In contrast to the narrowband absorption characteristics of conventional band-edge excitons,which are limited by the bandgap energy,highenergy excitons not only demonstrate broad momentum matching capability in the ultraviolet regime due to band nesting effects,but also exhibit distinct absorption peak signatures owing to robust excitonic stabilization under 2D confinement.These unique photophysical properties have established such systems as a prominent research frontier in contemporary exciton physics.This review primarily outlines the distinctive physical characteristics of high-energy excitons in TMDs from the perspectives of band structure,excitonic characteristics,and optical properties.Subsequently,we systematically delineate cutting-edge developments in TMD-based photonic devices exploiting high-energy excitonic band-nesting phenomena,with dedicated emphasis on the strategic engineering of nanoscale heterostructures for tailored optoelectronic functionality.Finally,the discussion concludes with an examination of the challenges associated with the design of high-energy exciton devices and their potential future applications.
