Recently, neuromorphic devices for artificial intelligence applications have attracted much attention. In this work, a three-terminal electrolyte-gated synaptic transistor based on NdNiO3 epitaxial films, a typical co...Recently, neuromorphic devices for artificial intelligence applications have attracted much attention. In this work, a three-terminal electrolyte-gated synaptic transistor based on NdNiO3 epitaxial films, a typical correlated electron material, is presented. The voltage-controlled metal-insulator transition was achieved by inserting and extracting H+ ions in the NdNiO3 channel through electrolyte gating. The non-volatile conductance change reached 104 under a 2 V gate voltage. By manipulating the amount of inserted protons, the three-terminal NdNiO3 artificial synapse imitated important synaptic functions, such as synaptic plasticity and spike-timing-dependent plasticity. These results show that the correlated material NdNiO3 has great potential for applications in neuromorphic devices.展开更多
Rare-earth nickelates possess intrinsic charge order,orbital order,and electron-lattice coupling,which make them very interesting for applications in oxide-based electronic devices.In this study,we grew NdNiO_(3-δ)(N...Rare-earth nickelates possess intrinsic charge order,orbital order,and electron-lattice coupling,which make them very interesting for applications in oxide-based electronic devices.In this study,we grew NdNiO_(3-δ)(NNO) films with oxygen pressures changing from 27 to 10^(-5) Pa.With decreasing oxygen pressure,the antiferromagnetic state of the NNO film becomes a ferromagnetic state,and the resistance increases significantly.According to combined X-ray absorption spectro scopy and X-ray linear dichroism measurements,the ratio of Ni^(2+)-ions increases with decreasing oxygen-pressure,and the preferred orbital occupation changes from x^(2)-y^(2) to 3 z^(2)-r^(2).In addition,using the ionic-liquid gating method to control the migration of oxygen vacancies,both the magnetic properties and resistance of NNO films can be modulated reversibly.The oxygen vacancy induces a valence in the Ni ions and the orbital occupation changes,which alters the magnetic properties and the electronic transport in these NNO films.This study describes a novel tunable method for electronic devices that use NdNiO_(3-δ) films,and opens new doors for future improvements and functionalities.展开更多
基金Project supported by the National Key R&D Program of China(Grant Nos.2017YFA0303604 and 2019YFA0308500)the National Natural Science Foundation of China(Grant Nos.11674385,11404380,11721404,and 11874412)+1 种基金the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2018008)the Key Research Program of Frontier Sciences,Chinese Academy of Sciences(Grant No.QYZDJSSW-SLH020).
文摘Recently, neuromorphic devices for artificial intelligence applications have attracted much attention. In this work, a three-terminal electrolyte-gated synaptic transistor based on NdNiO3 epitaxial films, a typical correlated electron material, is presented. The voltage-controlled metal-insulator transition was achieved by inserting and extracting H+ ions in the NdNiO3 channel through electrolyte gating. The non-volatile conductance change reached 104 under a 2 V gate voltage. By manipulating the amount of inserted protons, the three-terminal NdNiO3 artificial synapse imitated important synaptic functions, such as synaptic plasticity and spike-timing-dependent plasticity. These results show that the correlated material NdNiO3 has great potential for applications in neuromorphic devices.
基金Project supported by the National Natural Science Foundation of China(51871137,51901118,61434002)the Graduate Student Innovation Project in Shanxi Province(010903010050)。
文摘Rare-earth nickelates possess intrinsic charge order,orbital order,and electron-lattice coupling,which make them very interesting for applications in oxide-based electronic devices.In this study,we grew NdNiO_(3-δ)(NNO) films with oxygen pressures changing from 27 to 10^(-5) Pa.With decreasing oxygen pressure,the antiferromagnetic state of the NNO film becomes a ferromagnetic state,and the resistance increases significantly.According to combined X-ray absorption spectro scopy and X-ray linear dichroism measurements,the ratio of Ni^(2+)-ions increases with decreasing oxygen-pressure,and the preferred orbital occupation changes from x^(2)-y^(2) to 3 z^(2)-r^(2).In addition,using the ionic-liquid gating method to control the migration of oxygen vacancies,both the magnetic properties and resistance of NNO films can be modulated reversibly.The oxygen vacancy induces a valence in the Ni ions and the orbital occupation changes,which alters the magnetic properties and the electronic transport in these NNO films.This study describes a novel tunable method for electronic devices that use NdNiO_(3-δ) films,and opens new doors for future improvements and functionalities.
