BaTiO3∶Mn0.006Smx(x=0.001, 0.002, 0.003, 0.004, 0.006 respectively) ceramics were prepared by using sol-gel method and their resistivities at different temperatures were measured. The results showed that Mn element m...BaTiO3∶Mn0.006Smx(x=0.001, 0.002, 0.003, 0.004, 0.006 respectively) ceramics were prepared by using sol-gel method and their resistivities at different temperatures were measured. The results showed that Mn element may enhance the PTC characteristics of BaTiO3 ceramics. But the doped Mn element deteriorated the room temperature resistivities of the modified BaTiO3 ceramics which were greater than 105 Ω·m. Then, rare earth element Sm was penetrated into BaTiO3∶Mn0.06Smx ceramics in gaseous state, which largely decreased the room temperature resistivity to 3.20 Ω·m, and appeared as a NTC effect instead of PTC effect. The forming mechanism of NTC effect was explored through analyses of SEM and electric properties of Sm-penetrated BaTiO3∶Mn0.006Smx ceramics.展开更多
Y^3＋-doped （Bi 1/2 Na 1/2） TiO 3-CaTiO 3-BaTiO 3 （BNCBT） positive temperature coefficient of resistivity （PTCR） ceramics sintered in air atmosphere were investigated in this study. （Bi 1/2 Na 1/2） TiO 3 （BNT...Y^3＋-doped （Bi 1/2 Na 1/2） TiO 3-CaTiO 3-BaTiO 3 （BNCBT） positive temperature coefficient of resistivity （PTCR） ceramics sintered in air atmosphere were investigated in this study. （Bi 1/2 Na 1/2） TiO 3 （BNT） component can remarkably increase the onset temperature T c of PTCR ceramics with the expense of the resistivity R 25 increase. CaTiO 3 （9–27 mol%） component can decrease the resistivity, and adjust the effects of BNT phase on the T c point. For the sample containing 3 mol% CaTiO 3 , T c raises from 122 ℃ to 153 ℃ when only 0.6 mol% BNT added, while for the ones with higher CaTiO 3 content （9–27 mol%）, T c is only increased by a rate of 8–9℃/1.0 mol% BNT. The effects of BNT and CaTiO 3 components on R25/Rmin （negative temperature coefficient effect） are also discussed.展开更多
Two-dimensional(2D)materials with tunable electronic transitions are vital for next-generation electronics and energy storage technologies.Here,we demonstrate a novel,thermally-driven,reversible modulation of electron...Two-dimensional(2D)materials with tunable electronic transitions are vital for next-generation electronics and energy storage technologies.Here,we demonstrate a novel,thermally-driven,reversible modulation of electronic conductivity in the quaternary heteroanionic 2D van der Waals superlattice Bi_(4)O_(4)SeCl_(2).Systematic thermal annealing of bulk Bi_(4)O_(4)SeCl_(2)induces a striking reversible transition from insulating to semiconducting behavior,accompanied by a 10~6 times magnitude enhancement in electrical conductivity.This dramatic transformation originates from thermally mediated defect annihilation and grain boundary elimination,substantially reducing carrier scattering barriers and enhancing intrinsic carrier concentration.Moreover,leveraging its intrinsic layered structure,we successfully exfoliated Bi_(4)O_(4)SeCl_(2)into nanosheets(~1.5 nm in thickness)and utilized these exfoliated layers as interfacial coatings on Zn electrodes,markedly improving dendrite suppression and extending the cycling stability of Zn-ion hybrid capacitors and Zn/MnO_(2)batteries.Our work elucidates crucial defect-driven micro s tructural mechanisms responsible for thermally-induced reversible electronic transitions,establishing heteroanionic Bi_(4)O_(4)SeCl_(2)as a promising platform for advanced electronic and energystorage materials engineering.展开更多
文摘BaTiO3∶Mn0.006Smx(x=0.001, 0.002, 0.003, 0.004, 0.006 respectively) ceramics were prepared by using sol-gel method and their resistivities at different temperatures were measured. The results showed that Mn element may enhance the PTC characteristics of BaTiO3 ceramics. But the doped Mn element deteriorated the room temperature resistivities of the modified BaTiO3 ceramics which were greater than 105 Ω·m. Then, rare earth element Sm was penetrated into BaTiO3∶Mn0.06Smx ceramics in gaseous state, which largely decreased the room temperature resistivity to 3.20 Ω·m, and appeared as a NTC effect instead of PTC effect. The forming mechanism of NTC effect was explored through analyses of SEM and electric properties of Sm-penetrated BaTiO3∶Mn0.006Smx ceramics.
基金Project supported by the SPAT of Shanghai Committee of Chinese People's Political Consultative Conference and Shanghai Education Development Foundation (Grant No.2008012)
文摘Y^3＋-doped （Bi 1/2 Na 1/2） TiO 3-CaTiO 3-BaTiO 3 （BNCBT） positive temperature coefficient of resistivity （PTCR） ceramics sintered in air atmosphere were investigated in this study. （Bi 1/2 Na 1/2） TiO 3 （BNT） component can remarkably increase the onset temperature T c of PTCR ceramics with the expense of the resistivity R 25 increase. CaTiO 3 （9–27 mol%） component can decrease the resistivity, and adjust the effects of BNT phase on the T c point. For the sample containing 3 mol% CaTiO 3 , T c raises from 122 ℃ to 153 ℃ when only 0.6 mol% BNT added, while for the ones with higher CaTiO 3 content （9–27 mol%）, T c is only increased by a rate of 8–9℃/1.0 mol% BNT. The effects of BNT and CaTiO 3 components on R25/Rmin （negative temperature coefficient effect） are also discussed.
基金supported by the National Key Research and Development Program of China(No.2021YFA1200903)National Natural Science Foundation of China(Nos.22175203,22006023,and 11974435)+1 种基金Natural Science Foundation of Guangdong Province(Nos.2022B1515020065 and 2020A1515110821,2023A1515010841,2025A1515010050)Guangzhou Science and Technology Project(No.202102020126)
文摘Two-dimensional(2D)materials with tunable electronic transitions are vital for next-generation electronics and energy storage technologies.Here,we demonstrate a novel,thermally-driven,reversible modulation of electronic conductivity in the quaternary heteroanionic 2D van der Waals superlattice Bi_(4)O_(4)SeCl_(2).Systematic thermal annealing of bulk Bi_(4)O_(4)SeCl_(2)induces a striking reversible transition from insulating to semiconducting behavior,accompanied by a 10~6 times magnitude enhancement in electrical conductivity.This dramatic transformation originates from thermally mediated defect annihilation and grain boundary elimination,substantially reducing carrier scattering barriers and enhancing intrinsic carrier concentration.Moreover,leveraging its intrinsic layered structure,we successfully exfoliated Bi_(4)O_(4)SeCl_(2)into nanosheets(~1.5 nm in thickness)and utilized these exfoliated layers as interfacial coatings on Zn electrodes,markedly improving dendrite suppression and extending the cycling stability of Zn-ion hybrid capacitors and Zn/MnO_(2)batteries.Our work elucidates crucial defect-driven micro s tructural mechanisms responsible for thermally-induced reversible electronic transitions,establishing heteroanionic Bi_(4)O_(4)SeCl_(2)as a promising platform for advanced electronic and energystorage materials engineering.
