In this study, we propose a novel combination of tunneling field-effect transistors （TFETs） with asymmetrically doped p^＋-i-n^＋ silicon nanowire （SiNW） channels on a bendable substrate. The combination of two n-...In this study, we propose a novel combination of tunneling field-effect transistors （TFETs） with asymmetrically doped p^＋-i-n^＋ silicon nanowire （SiNW） channels on a bendable substrate. The combination of two n-channel SiNW-TFETs （NWTFETs） in parallel and two p-channel NWTFETs in series operates as a two-input NOR logic gate. The component NWTFETs with the n- and p-channels exhibit subthreshold swings （SSs） of 69 and 53 mV·dec^-1, respectively, and the on/off current ratios are -106. The NOR logic operation is sustainable and reproducible for up to 1,000 bending cycles with a narrow transition width of -0.26 V. The mechanical bendability of the bendable NWTFETs shows that they are stable and have good fatigue properties. To the best of our knowledge, this is the first study on the electrical and mechanical characteristics of a bendable NOR logic gate composed of NWTFETs.展开更多
In this study, we propose complementary metal-oxide-semiconductor （CMOS） NOR logic gates consisting of silicon nanowire （NW） arrays on bendable substrates. A circuit consisting of two p-channel NW field-effect tra...In this study, we propose complementary metal-oxide-semiconductor （CMOS） NOR logic gates consisting of silicon nanowire （NW） arrays on bendable substrates. A circuit consisting of two p-channel NW field-effect transistors （NWFETs） in series and two n-channel NWFETs in parallel is constructed to operate a two- input CMOS NOR logic gate. The NOR logic gates operate at a low supply voltage of 1 V with a rail-to-rail logic swing and a high voltage gain of approximately -3.0. The exact NOR logic functionality is achieved owing to the superior electrical characteristics of the well-aligned p- and n-NWFETs, which are obtained using conventional Si-based CMOS technology. Moreover, the NOR logic gates exhibit stable characteristics and have good mechanical properties. The proposed bendable NW CMOS NOR logic gates are promising building blocks for future bendable integrated electronics.展开更多
文摘In this study, we propose a novel combination of tunneling field-effect transistors （TFETs） with asymmetrically doped p^＋-i-n^＋ silicon nanowire （SiNW） channels on a bendable substrate. The combination of two n-channel SiNW-TFETs （NWTFETs） in parallel and two p-channel NWTFETs in series operates as a two-input NOR logic gate. The component NWTFETs with the n- and p-channels exhibit subthreshold swings （SSs） of 69 and 53 mV·dec^-1, respectively, and the on/off current ratios are -106. The NOR logic operation is sustainable and reproducible for up to 1,000 bending cycles with a narrow transition width of -0.26 V. The mechanical bendability of the bendable NWTFETs shows that they are stable and have good fatigue properties. To the best of our knowledge, this is the first study on the electrical and mechanical characteristics of a bendable NOR logic gate composed of NWTFETs.
文摘In this study, we propose complementary metal-oxide-semiconductor （CMOS） NOR logic gates consisting of silicon nanowire （NW） arrays on bendable substrates. A circuit consisting of two p-channel NW field-effect transistors （NWFETs） in series and two n-channel NWFETs in parallel is constructed to operate a two- input CMOS NOR logic gate. The NOR logic gates operate at a low supply voltage of 1 V with a rail-to-rail logic swing and a high voltage gain of approximately -3.0. The exact NOR logic functionality is achieved owing to the superior electrical characteristics of the well-aligned p- and n-NWFETs, which are obtained using conventional Si-based CMOS technology. Moreover, the NOR logic gates exhibit stable characteristics and have good mechanical properties. The proposed bendable NW CMOS NOR logic gates are promising building blocks for future bendable integrated electronics.
