Twist,the very degree of freedom in van der Waals heterostructures,offers a compelling avenue to manipulate and tailor their electrical and optical characteristics.In particular,moirépatterns in twisted homobilay...Twist,the very degree of freedom in van der Waals heterostructures,offers a compelling avenue to manipulate and tailor their electrical and optical characteristics.In particular,moirépatterns in twisted homobilayer transition metal dichalcogenides(TMDs)lead to zone folding and miniband formation in the resulting electronic bands,holding the promise to exhibit inter-layer excitonic optical phenomena.Although some experiments have shown the existence of twist-angle-dependent intra-and inter-layer excitons in twisted MoSe2 homobilayers,electrical control of the interlayer excitons in MoSe_(2) is relatively under-explored.Here,we show the signatures of the moiréeffect on intralayer and interlayer excitons in 2H-stacked twisted MoSe2 homobilayers.Doping-and electric field-dependent photoluminescence mea-surements at low temperatures give evidence of the momentum-direct K-K intralayer excitons,and the momentum-indirect Г-K and Г-Q interlayer excitons.Our results suggest that twisted MoSe_(2) homobilayers are an intriguing platform for engineering interlayer exciton states,which may shed light on future atomically thin optoelectronic applications.展开更多
Semiconductor moirésuperlattices provide great platforms for exploring exotic collective excitations.Optical Stark effect,a shift of the electronic transition in the presence of a light field,provides an ultrafas...Semiconductor moirésuperlattices provide great platforms for exploring exotic collective excitations.Optical Stark effect,a shift of the electronic transition in the presence of a light field,provides an ultrafast and coherent method of manipulating matter states,which,however,has not been demonstrated in moirématerials.Here,we report the valleyselective optical Stark effect of moiréexcitons in the WSe_(2)/WS_(2)superlattice by using transient reflection spectroscopy.Prominent valley-selective energy shifts up to 7.8 meV have been observed for moiréexcitons,corresponding to pseudomagnetic fields as large as 34 T.Our results provide a route to coherently manipulate exotic states in moirésuperlattices.展开更多
Two-dimensional(2D)transition metal dichalcogenides(TMDs),endowed with exceptional light-matter interaction strength,have become a pivotal platform in advanced optoelectronics,enabling atomically precise control of ex...Two-dimensional(2D)transition metal dichalcogenides(TMDs),endowed with exceptional light-matter interaction strength,have become a pivotal platform in advanced optoelectronics,enabling atomically precise control of excitonic phenomena and offering transformative potential for engineering next-generation optoelectronic devices.In contrast to the narrowband absorption characteristics of conventional band-edge excitons,which are limited by the bandgap energy,highenergy excitons not only demonstrate broad momentum matching capability in the ultraviolet regime due to band nesting effects,but also exhibit distinct absorption peak signatures owing to robust excitonic stabilization under 2D confinement.These unique photophysical properties have established such systems as a prominent research frontier in contemporary exciton physics.This review primarily outlines the distinctive physical characteristics of high-energy excitons in TMDs from the perspectives of band structure,excitonic characteristics,and optical properties.Subsequently,we systematically delineate cutting-edge developments in TMD-based photonic devices exploiting high-energy excitonic band-nesting phenomena,with dedicated emphasis on the strategic engineering of nanoscale heterostructures for tailored optoelectronic functionality.Finally,the discussion concludes with an examination of the challenges associated with the design of high-energy exciton devices and their potential future applications.展开更多
Electron–hole(e–h)recombination is a fundamental process that governs energy dissipation and device efficiency in semiconductors.In two-dimensional(2D)materials,the formation of tightly bound excitons makes exciton-...Electron–hole(e–h)recombination is a fundamental process that governs energy dissipation and device efficiency in semiconductors.In two-dimensional(2D)materials,the formation of tightly bound excitons makes exciton-mediated e–h recombination the dominant decay pathway.In this work,nonradiative e–h recombination within excitons in monolayer MoS_(2) is investigated using first-principles simulations that combine nonadiabatic molecular dynamics with GW and real-time Bethe–Salpeter equation(BSE)propagation.A two-step process is identified:rapid intervalley redistribution induced by exchange interaction,followed by slower phonon-assisted recombination facilitated by exciton binding.By selectively removing the screened Coulomb and exchange terms from the BSE Hamiltonian,their respective contributions are disentangled—exchange interaction is found to increase the number of accessible recombination pathways,while binding reduces the excitation energy and enhances nonradiative decay.A reduction in recombination lifetime by over an order of magnitude is observed due to the excitonic many-body effects.These findings provide microscopic insights for understanding and tuning exciton lifetimes in 2D transition-metal dichalcogenides.展开更多
Organic photovoltaics(OPVs)have achieved remarkable progress,with laboratory-scale single-junction devices now demonstrating power conversion efficiencies(PCEs)exceeding 20%.However,these efficiencies are highly depen...Organic photovoltaics(OPVs)have achieved remarkable progress,with laboratory-scale single-junction devices now demonstrating power conversion efficiencies(PCEs)exceeding 20%.However,these efficiencies are highly dependent on the thickness of the photoactive layer,which is typically around 100 nm.This sensitivity poses a challenge for industrial-scale fabrication.Achieving high PCEs in thick-film OPVs is therefore essential.This review systematically examines recent advancements in thick-film OPVs,focusing on the fundamental mechanisms that lead to efficiency loss and strategies to enhance performance.We provide a comprehensive analysis spanning the complete photovoltaic process chain:from initial exciton generation and diffusion dynamics,through dissociation mechanisms,to subsequent charge-carrier transport,balance optimization,and final collection efficiency.Particular emphasis is placed on cutting-edge solutions in molecular engineering and device architecture optimization.By synthesizing these interdisciplinary approaches and investigating the potential contributions in stability,cost,and machine learning aspects,this work establishes comprehensive guidelines for designing high-performance OPVs devices with minimal thickness dependence,ultimately aiming to bridge the gap between laboratory achievements and industrial manufacturing requirements.展开更多
Correction to:Nano-Micro Letters(2026)18:10.https://doi.org/10.1007/s40820-025-01852-8 Following publication of the original article[1],the authors reported that the last author’s name was inadvertently misspelled.Th...Correction to:Nano-Micro Letters(2026)18:10.https://doi.org/10.1007/s40820-025-01852-8 Following publication of the original article[1],the authors reported that the last author’s name was inadvertently misspelled.The published version showed“Hongzhen Chen”,whereas the correct spelling should be“Hongzheng Chen”.The correct author name has been provided in this Correction,and the original article[1]has been corrected.展开更多
We investigate the binding energies of excitons in a strained （111）-oriented zinc-blende GaN/Al0.3 Ga0.7 N quantum well screened by the electron-hole （e-h） gas under hydrostatic pressure by combining a variational...We investigate the binding energies of excitons in a strained （111）-oriented zinc-blende GaN/Al0.3 Ga0.7 N quantum well screened by the electron-hole （e-h） gas under hydrostatic pressure by combining a variational method and a selfconsistent procedure. A built-in electric field produced by the strain-induced piezoelectric polarization is considered in our calculations. The result indicates that the binding energies of excitons increase nearly linearly with pressure,even though the modification of strain with hydrostatic pressure is considered, and the influence of pressure is more apparent under higher e-h densities. It is also found that as the density of an e-h gas increases,the binding energies first increase slowly to a maximum and then decrease rapidly when the e-h density is larger than about 1 ×10^11 cm^-2. The excitonic binding energies increase obviously as the barrier thickness decreases due to the decrease of the built-in electric field.展开更多
Atoms under optical and magnetic trapping in a limited space at a very low temperature can lead to Bose-Einstein condensation （BEC）, even in a one-dimensional （1D） optical lattice. However, can the confinment of d...Atoms under optical and magnetic trapping in a limited space at a very low temperature can lead to Bose-Einstein condensation （BEC）, even in a one-dimensional （1D） optical lattice. However, can the confinment of dense excitons in a 1D semiconductor microstructure easily reach the excitonic BEC？ A lightly Mn（II）-doped ZnO nanowire under a femtosecond laser pulse pump at room temperature produces single-mode lasing from coherent bipolaronic excitons, which is much like a macroscopic quantum state due to the condensation of the bipoaronic excitons if not real BEC. In this process, longitudinal biphonon binding with the exciton plays an important role. We revisit this system and propose possibility of bipolaronic exciton condensation. More studies are needed for this condensation phenomenon in 1D microcavity systems.展开更多
The binding energies of excitons in quantum well structures subjected to an applied uniform electric field by taking into account the exciton longitudinal optical phonon interaction is calculated. The binding energies...The binding energies of excitons in quantum well structures subjected to an applied uniform electric field by taking into account the exciton longitudinal optical phonon interaction is calculated. The binding energies and corresponding Stark shifts for Ⅲ-Ⅴ and Ⅱ-Ⅵ compound semiconductor quantum well structures have been numerically computed. The results for GaAs/A1GaAs and ZnCdSe/ZnSe quantum wells are given and discussed. Theoretical results show that the exciton-phonon coupling reduces both the exciton binding energies and the Stark shifts by screening the Coulomb interaction. This effect is observable experimentally and cannot be neglected.展开更多
Light-emitting diodes based on lead halide perovskite have attracted great attention due to their outstanding performance.However,their application is plagued by the toxicity of Pb and the poor stability.Herein novel ...Light-emitting diodes based on lead halide perovskite have attracted great attention due to their outstanding performance.However,their application is plagued by the toxicity of Pb and the poor stability.Herein novel copper-based all inorganic perovskite CsCu2I3 with much enhanced stability has been reported with a potential photoluminescence quantum yield(PLQY)over 20%and self-trapped excitons(STE).By taking advantage of its extraordinary thermal stability,we successfully fabricate high-quality CsCu2I3 film through direct vacuum-based deposition(VBD)of CsCu2I3 powder.The resulting film shows almost the same PLQY with the synthesized powder,as well as excellent uniformity and stability.The perovskite light-emitting diodes(Pe-LED)based on the evaporated CsCu2I3 emitting layer achieve a luminescence of 10 cd/m2 and an external quantum efficiency(EQE)of 0.02%.To the best of our knowledge,this is the first CsCu2I3 Pe-LED fabricated by VBD with STE property,which offers a new avenue for lead-free Pe-LED.展开更多
In this work, the effects of quantum confinement on the ground state energy of a correlated electron-hole pair in a spherical and in a disc-like quantum dot have been investigated as a function of quantum dot size. Un...In this work, the effects of quantum confinement on the ground state energy of a correlated electron-hole pair in a spherical and in a disc-like quantum dot have been investigated as a function of quantum dot size. Under parabolic confinement potential and within effective mass approximation Ritz＇s variational method is applied to Hylleraas-like trial wavefunction. An efficient method for reducing the main effort of the calculation of terms like τekh exp （-λτeh） is introduced. The main contribution of the present work is the introduction of integral transforms which provide the calculation of expectation value of energy and the related matrix elements to be done analytically over single-particle coordinates instead of Hvlleraas coordinates.展开更多
The energy spectra of the ground state for an exciton (X) trapped by a neutral acceptor (A<SUP>0</SUP>) in a quantum dot with a parabolic confinement have been calculated as a function of the electron-to-h...The energy spectra of the ground state for an exciton (X) trapped by a neutral acceptor (A<SUP>0</SUP>) in a quantum dot with a parabolic confinement have been calculated as a function of the electron-to-hole mass ratio σ by using the hyperspherical coordinates. We find that the (A<SUP>0</SUP>,X) complex confined in a quantum dot has in general a larger binding energy than those in a two-dimensional quantum well and a three-dimensional bulk semiconductor, and the binding energy decreases with the increase of the electron-to-hole mass ratio.展开更多
The relation between the excitonic purity and the concurrence in a system of two coupled large semiconduction quantum dots mediated by a single-mode cavity field is investigated by using linear entropy theory. The res...The relation between the excitonic purity and the concurrence in a system of two coupled large semiconduction quantum dots mediated by a single-mode cavity field is investigated by using linear entropy theory. The results show the difference in describing two modes of excitonic entanglement between linear entropy and concurrence. The relation between nonclassical property of cavity field and the entanglement degree of excitons is also discussed. The results show that two modes of exciton can reach maximal entanglement when the cavity exhibits an antibunching effect.展开更多
We present here a formulation of subdynamics to calculatee Wannier-Mott excitons in a Nami-semiconductor driven by a strong electrical field. The formula of the evolution of density operator for the time-dependent Lio...We present here a formulation of subdynamics to calculatee Wannier-Mott excitons in a Nami-semiconductor driven by a strong electrical field. The formula of the evolution of density operator for the time-dependent Liouvillian is given. In terms of this formula rue can calculate the nonlinear response of the absorbing coefficient of light for nami-semicouducton. The results are helpful to study either the nonlinear behavior of the Wannier-Mott excitons in a nami-semicouducton driven by a strong harmonic field or the optic properties of these Kinds of materials.展开更多
We investigate the interactions of lattice pbonons with Wannier-Mott exciton, the exciton that has a large radius in two-dimensional molecular lattice, by the method of continuum limit approximation, and obtain that t...We investigate the interactions of lattice pbonons with Wannier-Mott exciton, the exciton that has a large radius in two-dimensional molecular lattice, by the method of continuum limit approximation, and obtain that the self-trapping can also appear in two-dimensional molecular lattice with a harmonic and nonlinear potential. The exciton effect on molecular lattice does not distort the molecular lattice but only makes it localized and the localization can also react, again through phonon coupling, to trap the energy and prevents its dispersion.展开更多
We investigate the interactions of lattice phonons with Frenkel exciton, which has a small radius in a twodimensional discrete molecular lattice, by the virtue of the quasi-discreteness approximation and the method of...We investigate the interactions of lattice phonons with Frenkel exciton, which has a small radius in a twodimensional discrete molecular lattice, by the virtue of the quasi-discreteness approximation and the method of multiplescale, and obtain that the self-trapping can also appear in the two-dimensional discrete molecular lattice with harmonic and nonlinear potential. The excitons＇ effect on the molecular lattice does not distort it but only causes it to localize which enables it to react again through phonon coupling to trap the energy and prevent its dispersion.展开更多
Binding energies of excitons in GaAs films on AlxGal-xAs substrates are studied theoretically with the fractional- dimensional approach. In this approach, the real anisotropic ＂exciton ＋ film＂ semiconductor system ...Binding energies of excitons in GaAs films on AlxGal-xAs substrates are studied theoretically with the fractional- dimensional approach. In this approach, the real anisotropic ＂exciton ＋ film＂ semiconductor system is mapped into an effective fractional-dimensional isotropic space. For different aluminum concentrations and substrate thicknesses, the exci- ton binding energies are obtained as a function of the film thickness. The numerical results show that, for different aluminum concentrations and substrate thicknesses, the exciton binding energies in GaAs films on AlxGal_xAs substrates all exhibit their maxima with increasing film thickness. It is also shown that the binding energies of heavy-hole and light-hole excitons both have their maxima with increasing film thickness.展开更多
The coherent exciton plays an important role in the photosynthetic primary process, and its functions are deeply dependent on the orientation arrangements of local transition dipole moments （TDMs）. We theoretically ...The coherent exciton plays an important role in the photosynthetic primary process, and its functions are deeply dependent on the orientation arrangements of local transition dipole moments （TDMs）. We theoretically and systematically study the physical property of the coherent exciton at different orientation arrangements of the local TDMs in circular light-harvesting （LH） complexes. Especially, if the orientation arrangements are different, the delocalized TDMs of the coherent excitons and the energy locations of the optically active coherent excitons （OACEs） can be obviously different, and then there are more manners to capture, store and transfer light energy in and between LH complexes. Similarly, if the orientation arrangements are altered, light absorption and radiative intensities can be converted fully between the OACEs in the upper and lower coherent exciton bands, and then the blue and red shifts of the absorption and radiative bands of the pigment molecules can occur simultaneously at some orientation arrangements. If the systems are in the vicinities of the critical orientation arrangements, the weak static disorder or small thermal excitation can destroy the coherent electronic excitations, and then the coherent exciton cannot exist any more.展开更多
The strong intrinsic Coulomb interactions of Frenkel excitons in crystalline carbon nitride(CCN) greatly limits their dissociation into electrons and holes, resulting in unsatisfactory charges separation and photocata...The strong intrinsic Coulomb interactions of Frenkel excitons in crystalline carbon nitride(CCN) greatly limits their dissociation into electrons and holes, resulting in unsatisfactory charges separation and photocatalytic efficiency. Herein, we propose a strategy to facilitate excitons dissociation by molecular regulation induced built-in electric field(BIEF). The electron-rich pyrimidine-ring into CCN changes the charge density distribution over heptazine-rings to induce BIEF between melon chains. Such BIEF is sufficient to overcome the considerable exciton binding energy(EBE) and reduce it from 38.4 meV to 16.4 meV,increasing the excitons dissociation efficiency(EDE) from 21.5% to 51.9%. Our results establish a strategy to facilitate excitons dissociation through molecular regulation induced BIEF, targeting the intrinsic high EBE and low EDE of polymer photocatalysts.展开更多
The low-temperature (T = 2 K) exciton-polariton luminescence (EPL) spectra in the vicinity of the exciton-resonance frequency An=1 for CdS-type crystals have been theoretically and experimentally investigated with all...The low-temperature (T = 2 K) exciton-polariton luminescence (EPL) spectra in the vicinity of the exciton-resonance frequency An=1 for CdS-type crystals have been theoretically and experimentally investigated with allowance for the mechanical exciton decay . The results of the numerical calculations of the partial and interference contributions of the bulk and radiative surface spectral modes to the EPL in the geometry of additional s- and p-polarized waves emitted into vacuum are analyzed. It is shown that the contributions of purely longitudinal excitons and their interference with polaritons of the upper dispersion branch near the longitudinal frequency ωL to the EPL are small (∼10% - 30%);nevertheless, they must be taken into account to obtain quantitative agreement with experimental data. Specifically these contributions are responsible for the formation of an additional line (along with the fundamental AT line) in the case of oblique incidence of radiation.展开更多
基金supported by the National Key R&D Program of China(No.2023YFF1500600)the National Natural Science Foun-dation of China(Nos.12004259,12204287)+3 种基金China Postdoc-toral Science Foundation(Grant No.2022M723215)Zheng Vitto Han acknowledges the support of the Fund for Shanxi“1331 Project”Key Subjects Construction,and the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0302003)Kenji Watanabe and Takashi Taniguchi acknowledge support from the JSPS KAKENHI(Grant Nos.20H00354 and 23H02052)the World Premier International Research Center Initiative(WPI),MEXT,Japan.
文摘Twist,the very degree of freedom in van der Waals heterostructures,offers a compelling avenue to manipulate and tailor their electrical and optical characteristics.In particular,moirépatterns in twisted homobilayer transition metal dichalcogenides(TMDs)lead to zone folding and miniband formation in the resulting electronic bands,holding the promise to exhibit inter-layer excitonic optical phenomena.Although some experiments have shown the existence of twist-angle-dependent intra-and inter-layer excitons in twisted MoSe2 homobilayers,electrical control of the interlayer excitons in MoSe_(2) is relatively under-explored.Here,we show the signatures of the moiréeffect on intralayer and interlayer excitons in 2H-stacked twisted MoSe2 homobilayers.Doping-and electric field-dependent photoluminescence mea-surements at low temperatures give evidence of the momentum-direct K-K intralayer excitons,and the momentum-indirect Г-K and Г-Q interlayer excitons.Our results suggest that twisted MoSe_(2) homobilayers are an intriguing platform for engineering interlayer exciton states,which may shed light on future atomically thin optoelectronic applications.
基金Project supported by the National Key R&D Program of China(Grant Nos.2022YFA1402400 and 2022YFA1405400)the National Natural Science Foundation of China(Grant Nos.11934011 and 12274365)+3 种基金Zhejiang Provincial Natural Science Foundation of China(Grant No.LR24A040001)Open project of Key Laboratory of Artificial Structures and Quantum Control(Ministry of Education)of Shanghai Jiao Tong Universitysupport from the JSPS KAKENHI(Grant Nos.20H00354 and 23H02052)World Premier International Research Center Initiative(WPI),MEXT,Japan。
文摘Semiconductor moirésuperlattices provide great platforms for exploring exotic collective excitations.Optical Stark effect,a shift of the electronic transition in the presence of a light field,provides an ultrafast and coherent method of manipulating matter states,which,however,has not been demonstrated in moirématerials.Here,we report the valleyselective optical Stark effect of moiréexcitons in the WSe_(2)/WS_(2)superlattice by using transient reflection spectroscopy.Prominent valley-selective energy shifts up to 7.8 meV have been observed for moiréexcitons,corresponding to pseudomagnetic fields as large as 34 T.Our results provide a route to coherently manipulate exotic states in moirésuperlattices.
基金Project supported by the National Natural Science Foundation Fund for Distinguished Young Scholars(Grant No.52025022)the National Natural Science Foundation of China(Grant Nos.62574038,12474421,62275045,and 12074060)+1 种基金the National Key R&D Program of China(Grant No.2023YFB3610200)the Fund from Jilin Province(Grant Nos.JJKH20241413KJ and 20240601049RC)。
文摘Two-dimensional(2D)transition metal dichalcogenides(TMDs),endowed with exceptional light-matter interaction strength,have become a pivotal platform in advanced optoelectronics,enabling atomically precise control of excitonic phenomena and offering transformative potential for engineering next-generation optoelectronic devices.In contrast to the narrowband absorption characteristics of conventional band-edge excitons,which are limited by the bandgap energy,highenergy excitons not only demonstrate broad momentum matching capability in the ultraviolet regime due to band nesting effects,but also exhibit distinct absorption peak signatures owing to robust excitonic stabilization under 2D confinement.These unique photophysical properties have established such systems as a prominent research frontier in contemporary exciton physics.This review primarily outlines the distinctive physical characteristics of high-energy excitons in TMDs from the perspectives of band structure,excitonic characteristics,and optical properties.Subsequently,we systematically delineate cutting-edge developments in TMD-based photonic devices exploiting high-energy excitonic band-nesting phenomena,with dedicated emphasis on the strategic engineering of nanoscale heterostructures for tailored optoelectronic functionality.Finally,the discussion concludes with an examination of the challenges associated with the design of high-energy exciton devices and their potential future applications.
基金supported by the National Key Research and Development Program of China (Grant Nos.2024YFA1409800 for J.Z.and2024YFA1408603 for Q.Z.)the National Natural Science Foundation of China (Grant Nos.12125408,12334004for J.Z.,and 12174363 for Q.Z.)+1 种基金the Innovation Program for Quantum Science and Technology (Grant No.2021ZD0303306 for J.Z.)the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB0450101 for J.Z.)。
文摘Electron–hole(e–h)recombination is a fundamental process that governs energy dissipation and device efficiency in semiconductors.In two-dimensional(2D)materials,the formation of tightly bound excitons makes exciton-mediated e–h recombination the dominant decay pathway.In this work,nonradiative e–h recombination within excitons in monolayer MoS_(2) is investigated using first-principles simulations that combine nonadiabatic molecular dynamics with GW and real-time Bethe–Salpeter equation(BSE)propagation.A two-step process is identified:rapid intervalley redistribution induced by exchange interaction,followed by slower phonon-assisted recombination facilitated by exciton binding.By selectively removing the screened Coulomb and exchange terms from the BSE Hamiltonian,their respective contributions are disentangled—exchange interaction is found to increase the number of accessible recombination pathways,while binding reduces the excitation energy and enhances nonradiative decay.A reduction in recombination lifetime by over an order of magnitude is observed due to the excitonic many-body effects.These findings provide microscopic insights for understanding and tuning exciton lifetimes in 2D transition-metal dichalcogenides.
基金supported by Natural Science Foundation of Zhejiang Province(Nos.LQ23E030002,LZ23B040001)the National Natural Science Foundation of China(Nos.52303226,21971049)L.Zhan acknowledges the research start-up fund from Hangzhou Normal University(4095C50222204002).
文摘Organic photovoltaics(OPVs)have achieved remarkable progress,with laboratory-scale single-junction devices now demonstrating power conversion efficiencies(PCEs)exceeding 20%.However,these efficiencies are highly dependent on the thickness of the photoactive layer,which is typically around 100 nm.This sensitivity poses a challenge for industrial-scale fabrication.Achieving high PCEs in thick-film OPVs is therefore essential.This review systematically examines recent advancements in thick-film OPVs,focusing on the fundamental mechanisms that lead to efficiency loss and strategies to enhance performance.We provide a comprehensive analysis spanning the complete photovoltaic process chain:from initial exciton generation and diffusion dynamics,through dissociation mechanisms,to subsequent charge-carrier transport,balance optimization,and final collection efficiency.Particular emphasis is placed on cutting-edge solutions in molecular engineering and device architecture optimization.By synthesizing these interdisciplinary approaches and investigating the potential contributions in stability,cost,and machine learning aspects,this work establishes comprehensive guidelines for designing high-performance OPVs devices with minimal thickness dependence,ultimately aiming to bridge the gap between laboratory achievements and industrial manufacturing requirements.
文摘Correction to:Nano-Micro Letters(2026)18:10.https://doi.org/10.1007/s40820-025-01852-8 Following publication of the original article[1],the authors reported that the last author’s name was inadvertently misspelled.The published version showed“Hongzhen Chen”,whereas the correct spelling should be“Hongzheng Chen”.The correct author name has been provided in this Correction,and the original article[1]has been corrected.
文摘We investigate the binding energies of excitons in a strained （111）-oriented zinc-blende GaN/Al0.3 Ga0.7 N quantum well screened by the electron-hole （e-h） gas under hydrostatic pressure by combining a variational method and a selfconsistent procedure. A built-in electric field produced by the strain-induced piezoelectric polarization is considered in our calculations. The result indicates that the binding energies of excitons increase nearly linearly with pressure,even though the modification of strain with hydrostatic pressure is considered, and the influence of pressure is more apparent under higher e-h densities. It is also found that as the density of an e-h gas increases,the binding energies first increase slowly to a maximum and then decrease rapidly when the e-h density is larger than about 1 ×10^11 cm^-2. The excitonic binding energies increase obviously as the barrier thickness decreases due to the decrease of the built-in electric field.
基金supported by the National Natural Science Foundation of China (Grant Nos. 90606001,20873039,and 51002011)the Excellent Young Scholars Research Fund of Beijing Institute of Technology
文摘Atoms under optical and magnetic trapping in a limited space at a very low temperature can lead to Bose-Einstein condensation （BEC）, even in a one-dimensional （1D） optical lattice. However, can the confinment of dense excitons in a 1D semiconductor microstructure easily reach the excitonic BEC？ A lightly Mn（II）-doped ZnO nanowire under a femtosecond laser pulse pump at room temperature produces single-mode lasing from coherent bipolaronic excitons, which is much like a macroscopic quantum state due to the condensation of the bipoaronic excitons if not real BEC. In this process, longitudinal biphonon binding with the exciton plays an important role. We revisit this system and propose possibility of bipolaronic exciton condensation. More studies are needed for this condensation phenomenon in 1D microcavity systems.
基金Project supported in part by the National Natural Science Foundation of China （Grant No 10164003） and the Natural Science Foundation of Inner Mongol of China （Grant No 200408020101）.
文摘The binding energies of excitons in quantum well structures subjected to an applied uniform electric field by taking into account the exciton longitudinal optical phonon interaction is calculated. The binding energies and corresponding Stark shifts for Ⅲ-Ⅴ and Ⅱ-Ⅵ compound semiconductor quantum well structures have been numerically computed. The results for GaAs/A1GaAs and ZnCdSe/ZnSe quantum wells are given and discussed. Theoretical results show that the exciton-phonon coupling reduces both the exciton binding energies and the Stark shifts by screening the Coulomb interaction. This effect is observable experimentally and cannot be neglected.
基金supported by the National Key R&D Program of China(2016YFB070700702)the National Natural Science Foundation of China(51761145048)+1 种基金the Fundamental Research Funds for the Central Universities(HUST:2019421JYCXJJ004)the China Postdoctoral Science Foundation Grant(2019M662624).
文摘Light-emitting diodes based on lead halide perovskite have attracted great attention due to their outstanding performance.However,their application is plagued by the toxicity of Pb and the poor stability.Herein novel copper-based all inorganic perovskite CsCu2I3 with much enhanced stability has been reported with a potential photoluminescence quantum yield(PLQY)over 20%and self-trapped excitons(STE).By taking advantage of its extraordinary thermal stability,we successfully fabricate high-quality CsCu2I3 film through direct vacuum-based deposition(VBD)of CsCu2I3 powder.The resulting film shows almost the same PLQY with the synthesized powder,as well as excellent uniformity and stability.The perovskite light-emitting diodes(Pe-LED)based on the evaporated CsCu2I3 emitting layer achieve a luminescence of 10 cd/m2 and an external quantum efficiency(EQE)of 0.02%.To the best of our knowledge,this is the first CsCu2I3 Pe-LED fabricated by VBD with STE property,which offers a new avenue for lead-free Pe-LED.
文摘In this work, the effects of quantum confinement on the ground state energy of a correlated electron-hole pair in a spherical and in a disc-like quantum dot have been investigated as a function of quantum dot size. Under parabolic confinement potential and within effective mass approximation Ritz＇s variational method is applied to Hylleraas-like trial wavefunction. An efficient method for reducing the main effort of the calculation of terms like τekh exp （-λτeh） is introduced. The main contribution of the present work is the introduction of integral transforms which provide the calculation of expectation value of energy and the related matrix elements to be done analytically over single-particle coordinates instead of Hvlleraas coordinates.
基金The project supported by National Natural Science Foundation of China under Grant No.10275014
文摘The energy spectra of the ground state for an exciton (X) trapped by a neutral acceptor (A<SUP>0</SUP>) in a quantum dot with a parabolic confinement have been calculated as a function of the electron-to-hole mass ratio σ by using the hyperspherical coordinates. We find that the (A<SUP>0</SUP>,X) complex confined in a quantum dot has in general a larger binding energy than those in a two-dimensional quantum well and a three-dimensional bulk semiconductor, and the binding energy decreases with the increase of the electron-to-hole mass ratio.
基金Project supported by the Scientific Research Fund of Education Bureau of Hunan Province (Grant No 05C696)
文摘The relation between the excitonic purity and the concurrence in a system of two coupled large semiconduction quantum dots mediated by a single-mode cavity field is investigated by using linear entropy theory. The results show the difference in describing two modes of excitonic entanglement between linear entropy and concurrence. The relation between nonclassical property of cavity field and the entanglement degree of excitons is also discussed. The results show that two modes of exciton can reach maximal entanglement when the cavity exhibits an antibunching effect.
文摘We present here a formulation of subdynamics to calculatee Wannier-Mott excitons in a Nami-semiconductor driven by a strong electrical field. The formula of the evolution of density operator for the time-dependent Liouvillian is given. In terms of this formula rue can calculate the nonlinear response of the absorbing coefficient of light for nami-semicouducton. The results are helpful to study either the nonlinear behavior of the Wannier-Mott excitons in a nami-semicouducton driven by a strong harmonic field or the optic properties of these Kinds of materials.
基金supported by the National Natural Science Foundation of China (Grant No.1057400)the Natural Science Foundation of Heilongjiang Province,China (Grant No.A200506)
文摘We investigate the interactions of lattice pbonons with Wannier-Mott exciton, the exciton that has a large radius in two-dimensional molecular lattice, by the method of continuum limit approximation, and obtain that the self-trapping can also appear in two-dimensional molecular lattice with a harmonic and nonlinear potential. The exciton effect on molecular lattice does not distort the molecular lattice but only makes it localized and the localization can also react, again through phonon coupling, to trap the energy and prevents its dispersion.
基金supported by the National Natural Science Foundation of China (Grant No 1057400)the Natural Science Foundation of Heilongjiang Province of China (Grant No A200506)
文摘We investigate the interactions of lattice phonons with Frenkel exciton, which has a small radius in a twodimensional discrete molecular lattice, by the virtue of the quasi-discreteness approximation and the method of multiplescale, and obtain that the self-trapping can also appear in the two-dimensional discrete molecular lattice with harmonic and nonlinear potential. The excitons＇ effect on the molecular lattice does not distort it but only causes it to localize which enables it to react again through phonon coupling to trap the energy and prevent its dispersion.
基金Project supported by the National Natural Science Foundation of China(Grant No.11304011)the Fundamental Research Funds for the Central Universitie China
文摘Binding energies of excitons in GaAs films on AlxGal-xAs substrates are studied theoretically with the fractional- dimensional approach. In this approach, the real anisotropic ＂exciton ＋ film＂ semiconductor system is mapped into an effective fractional-dimensional isotropic space. For different aluminum concentrations and substrate thicknesses, the exci- ton binding energies are obtained as a function of the film thickness. The numerical results show that, for different aluminum concentrations and substrate thicknesses, the exciton binding energies in GaAs films on AlxGal_xAs substrates all exhibit their maxima with increasing film thickness. It is also shown that the binding energies of heavy-hole and light-hole excitons both have their maxima with increasing film thickness.
基金project supported by the National Natural Science Foundation of China （Grant Nos 60438020 and 60321003）, and the Knowledge innovation program of the Chinese Academy of Sciences （Grant No KJCX2-SW-W14）.
文摘The coherent exciton plays an important role in the photosynthetic primary process, and its functions are deeply dependent on the orientation arrangements of local transition dipole moments （TDMs）. We theoretically and systematically study the physical property of the coherent exciton at different orientation arrangements of the local TDMs in circular light-harvesting （LH） complexes. Especially, if the orientation arrangements are different, the delocalized TDMs of the coherent excitons and the energy locations of the optically active coherent excitons （OACEs） can be obviously different, and then there are more manners to capture, store and transfer light energy in and between LH complexes. Similarly, if the orientation arrangements are altered, light absorption and radiative intensities can be converted fully between the OACEs in the upper and lower coherent exciton bands, and then the blue and red shifts of the absorption and radiative bands of the pigment molecules can occur simultaneously at some orientation arrangements. If the systems are in the vicinities of the critical orientation arrangements, the weak static disorder or small thermal excitation can destroy the coherent electronic excitations, and then the coherent exciton cannot exist any more.
基金jointly supported by the Natural Science Foundation of China(Nos.51874199,22078200,22102103)the grant from SZIIT(No.SZIIT2022KJ026)+1 种基金Guangdong Basic and Applied Basic Research Foundation(Nos.2019A1515111021,2021A1515010162)Shenzhen Innovation Program(No.JCYJ20170818142642395)。
文摘The strong intrinsic Coulomb interactions of Frenkel excitons in crystalline carbon nitride(CCN) greatly limits their dissociation into electrons and holes, resulting in unsatisfactory charges separation and photocatalytic efficiency. Herein, we propose a strategy to facilitate excitons dissociation by molecular regulation induced built-in electric field(BIEF). The electron-rich pyrimidine-ring into CCN changes the charge density distribution over heptazine-rings to induce BIEF between melon chains. Such BIEF is sufficient to overcome the considerable exciton binding energy(EBE) and reduce it from 38.4 meV to 16.4 meV,increasing the excitons dissociation efficiency(EDE) from 21.5% to 51.9%. Our results establish a strategy to facilitate excitons dissociation through molecular regulation induced BIEF, targeting the intrinsic high EBE and low EDE of polymer photocatalysts.
文摘The low-temperature (T = 2 K) exciton-polariton luminescence (EPL) spectra in the vicinity of the exciton-resonance frequency An=1 for CdS-type crystals have been theoretically and experimentally investigated with allowance for the mechanical exciton decay . The results of the numerical calculations of the partial and interference contributions of the bulk and radiative surface spectral modes to the EPL in the geometry of additional s- and p-polarized waves emitted into vacuum are analyzed. It is shown that the contributions of purely longitudinal excitons and their interference with polaritons of the upper dispersion branch near the longitudinal frequency ωL to the EPL are small (∼10% - 30%);nevertheless, they must be taken into account to obtain quantitative agreement with experimental data. Specifically these contributions are responsible for the formation of an additional line (along with the fundamental AT line) in the case of oblique incidence of radiation.
