Different silicidation processes are employed to form NiSi,and the NiSi/Si interface corresponding to each process is studied by cross-section transmission electron microscopy （XTEM）. With the sputter deposition of ...Different silicidation processes are employed to form NiSi,and the NiSi/Si interface corresponding to each process is studied by cross-section transmission electron microscopy （XTEM）. With the sputter deposition of a nickel thin film,nickel silicidation is realized on undoped and doped （As and B） Si（001） substrates by rapid ther mal processing （RTP）. The formation of NiSi is demonstrated by X-ray diffraction and Raman scattering spectros- copy. The influence of the substrate doping and annealing process （one-step RTP and two-step RTP） on the NiSi! Si interface is investigated. The results show that for one-step RTP the silicidation on As-doped and undoped Si substrates causes a rougher NiSi/Si interface,while the two-step RTP results in a much smoother NiSi/Si interface. High resolution XTEM study shows that axiotaxy along the Si（111） direction forms in all samples, in which specific NiSi planes align with Si（111） planes in the substrate. Axiotaxy with spacing mismatch is also discussed.展开更多
随着超大规模集成电路技术的发展,CMOS器件的制备过程需要同时引入金属栅和超浅结等新的先进工艺技术,因此各种新工艺的兼容性研究具有重要意义.本文研究了超浅结工艺中使用的锗预非晶化对镍硅(N iS i)金属栅功函数的影响.对具有不同剂...随着超大规模集成电路技术的发展,CMOS器件的制备过程需要同时引入金属栅和超浅结等新的先进工艺技术,因此各种新工艺的兼容性研究具有重要意义.本文研究了超浅结工艺中使用的锗预非晶化对镍硅(N iS i)金属栅功函数的影响.对具有不同剂量Ge注入的N iS i金属栅MOS电容样品的研究表明,锗预非晶化采用的Ge注入对N iS i金属栅的功函数影响很小(小于0.03eV),而且Ge注入也不会导致氧化层中固定电荷以及氧化层和硅衬底之间界面态的增加.这些结果表明,在自对准的先进CMOS工艺中,N iS i金属栅工艺和锗预非晶化超浅结工艺可以互相兼容.展开更多
Thin film thermocouples（TFTCs） can provide fast and accurate surface temperature measurement with minimal impact on the physical characteristics of the supporting components. In this study, NiCr and NiSi films were ...Thin film thermocouples（TFTCs） can provide fast and accurate surface temperature measurement with minimal impact on the physical characteristics of the supporting components. In this study, NiCr and NiSi films were prepared with radio frequency（RF） magnetron sputtering and the influences of vacuum annealing on the resistivity of the films were investigated. Afterward, NiCr-NiSi films were deposited on Ni-based superalloy substrates to form TFTCs. The overall dimension of the thermocouple is 64 mm in length, 8 mm in width and 30 lm in thickness. Compared with those of as-deposited sample, the thermoelectric property and stability of the TFTC are significantly improved by vacuum annealing of NiCr and NiSi films. The variation of the Seebeck coefficient of TFTC was discussed based on the size effect of NiCr and NiSi films. And a lower Seebeck coefficient of TFTC of 38.4 μV·℃^-1 is obtained.展开更多
In order to clarify the effect of pt addition on the stress of NiSi film, in situ stress measurements were taken to evaluate the stress evolution during heating and cooling treatment of Ni1- x Ptx Si alloy films with ...In order to clarify the effect of pt addition on the stress of NiSi film, in situ stress measurements were taken to evaluate the stress evolution during heating and cooling treatment of Ni1- x Ptx Si alloy films with different Pt concentrations. The room temperature stress, which is mainly thermal stress, was measured to be 775MPa and 1.31GPa for pure NiSi and pure PtSi films grown on Si （100） substrates,respectively. For Ni1-x Ptx Si alloy film, the room temperature stress was observed to increase steadily with Pt concentration. From the temperature dependent stress evolution curves,the stress relaxation temperature was found to increase from 440℃ （for pure NiSi film） to 620℃ （for pure PtSi film） with increasing Pt concentration, thus influencing the residual stress at room temperature.展开更多
近日，耐司公司发布了旗下最新型号的方形滤镜系统——nisi f-stopper pro 100，该系统包括耐司全新开发的方形滤镜支架、nisi nd1000方形滤镜（100mm＊100mm）、方形渐变滤镜（100mm＊150mm）及方形偏光镜（100mm＊100mm），通过转接...近日，耐司公司发布了旗下最新型号的方形滤镜系统——nisi f-stopper pro 100，该系统包括耐司全新开发的方形滤镜支架、nisi nd1000方形滤镜（100mm＊100mm）、方形渐变滤镜（100mm＊150mm）及方形偏光镜（100mm＊100mm），通过转接环适用于82mm口径以下的镜头。展开更多
文摘Different silicidation processes are employed to form NiSi,and the NiSi/Si interface corresponding to each process is studied by cross-section transmission electron microscopy （XTEM）. With the sputter deposition of a nickel thin film,nickel silicidation is realized on undoped and doped （As and B） Si（001） substrates by rapid ther mal processing （RTP）. The formation of NiSi is demonstrated by X-ray diffraction and Raman scattering spectros- copy. The influence of the substrate doping and annealing process （one-step RTP and two-step RTP） on the NiSi! Si interface is investigated. The results show that for one-step RTP the silicidation on As-doped and undoped Si substrates causes a rougher NiSi/Si interface,while the two-step RTP results in a much smoother NiSi/Si interface. High resolution XTEM study shows that axiotaxy along the Si（111） direction forms in all samples, in which specific NiSi planes align with Si（111） planes in the substrate. Axiotaxy with spacing mismatch is also discussed.
文摘随着超大规模集成电路技术的发展,CMOS器件的制备过程需要同时引入金属栅和超浅结等新的先进工艺技术,因此各种新工艺的兼容性研究具有重要意义.本文研究了超浅结工艺中使用的锗预非晶化对镍硅(N iS i)金属栅功函数的影响.对具有不同剂量Ge注入的N iS i金属栅MOS电容样品的研究表明,锗预非晶化采用的Ge注入对N iS i金属栅的功函数影响很小(小于0.03eV),而且Ge注入也不会导致氧化层中固定电荷以及氧化层和硅衬底之间界面态的增加.这些结果表明,在自对准的先进CMOS工艺中,N iS i金属栅工艺和锗预非晶化超浅结工艺可以互相兼容.
基金financially supported by the National Natural Science Foundation of China (No.61223002)Sichuan Youth Science and Technology Innovation Research Team Funding (No.2011JTD0006)Program for Cooperation of Industry, Education and Academy of Guangdong Province, China (No.2013B090400001)
文摘Thin film thermocouples（TFTCs） can provide fast and accurate surface temperature measurement with minimal impact on the physical characteristics of the supporting components. In this study, NiCr and NiSi films were prepared with radio frequency（RF） magnetron sputtering and the influences of vacuum annealing on the resistivity of the films were investigated. Afterward, NiCr-NiSi films were deposited on Ni-based superalloy substrates to form TFTCs. The overall dimension of the thermocouple is 64 mm in length, 8 mm in width and 30 lm in thickness. Compared with those of as-deposited sample, the thermoelectric property and stability of the TFTC are significantly improved by vacuum annealing of NiCr and NiSi films. The variation of the Seebeck coefficient of TFTC was discussed based on the size effect of NiCr and NiSi films. And a lower Seebeck coefficient of TFTC of 38.4 μV·℃^-1 is obtained.
文摘In order to clarify the effect of pt addition on the stress of NiSi film, in situ stress measurements were taken to evaluate the stress evolution during heating and cooling treatment of Ni1- x Ptx Si alloy films with different Pt concentrations. The room temperature stress, which is mainly thermal stress, was measured to be 775MPa and 1.31GPa for pure NiSi and pure PtSi films grown on Si （100） substrates,respectively. For Ni1-x Ptx Si alloy film, the room temperature stress was observed to increase steadily with Pt concentration. From the temperature dependent stress evolution curves,the stress relaxation temperature was found to increase from 440℃ （for pure NiSi film） to 620℃ （for pure PtSi film） with increasing Pt concentration, thus influencing the residual stress at room temperature.
文摘近日，耐司公司发布了旗下最新型号的方形滤镜系统——nisi f-stopper pro 100，该系统包括耐司全新开发的方形滤镜支架、nisi nd1000方形滤镜（100mm＊100mm）、方形渐变滤镜（100mm＊150mm）及方形偏光镜（100mm＊100mm），通过转接环适用于82mm口径以下的镜头。
