The current efficiency for NF3 formation was independent on the current density in the range of 200 to 1,000 mA·cm^2. The average values of NF3 current efficiencies on the BDD （boron-doped diamond） anode with t...The current efficiency for NF3 formation was independent on the current density in the range of 200 to 1,000 mA·cm^2. The average values of NF3 current efficiencies on the BDD （boron-doped diamond） anode with the boron-concentration of 2,500 ppm were 32.3% at 80℃, 63.3% at 100℃ and 59.7% at 120℃. The best current efficiencies for NF3 formation on the BDD anode with boron-concentrations of 2,500, 5,000 and 7,500 ppm were obtained at 100℃ and those were 63.3%, 73.3% and 56.2%, respectively. Although anode effect occurred on the BDD electrodes covered with a part of the surface of the spiculate structure, which had the boron-concentrations higher than 7,500 ppm, it did not take place on the BDD electrodes covered with the surface of diamond structure, even if the BDD electrode had the boron-concentration of 8,000 ppm.展开更多
Hydrothermal deposition of antimony selenosulfide(Sb_(2)(S,Se_(3)))has enabled solar cell applications to surpass the 10%efficiency threshold.This deposition process involves the reaction of three precursor materials:...Hydrothermal deposition of antimony selenosulfide(Sb_(2)(S,Se_(3)))has enabled solar cell applications to surpass the 10%efficiency threshold.This deposition process involves the reaction of three precursor materials:Sb,S,and Se.However,this process generates an unfavourable gradient of Se and S anions in the Sb_(2)(S,Se)_(3)film,which limits further efficiency improvements.Herein,we demonstrate how NH_(4)F can be used as an additive to regulate the band gradient of the Sb_(2)(S,Se)_(3)and modify the surface of the CdS electron-transporting layer.On the one hand,NH_(4)F inhibits the decomposition of Na_(2)S_(2)O_(3)and selenourea,which optimizes the deposition process and allows for adjustment of the Se/S ratio and their distribution in the Sb_(2)(S,Se)_(3)film.On the other hand,hydrolysis of NH_(4)F induces dissolution and redeposition of CdS,thereby effectively improving the morphology and crystallinity of the CdS substrate.Finally,the dual effect of NH_(4)F enables improved surface morphology and energy alignment of the Sb_(2)(S,Se)_(3)film,thus yielding a maximum efficiency of 10.28%,a 12%improvement over the control device.This study demonstrates an effective strategy for simultaneously modifying a sulfide-based substrate and regulating the element distribution during the deposition of a metal chalcogenide film for optoelectronic device applications.展开更多
针对NH4F掩蔽法测定二价铁含量中存在的问题,将此测定方法改良为:对提取液不用浓硫酸或盐酸调节p H,直接先加入0.15%邻菲罗啉溶液2 m L,再加入3 mol·L-1 NH4F溶液2 m L,决定系数和变异系数分别为0.9998和10.23%,回归率达到了100.8...针对NH4F掩蔽法测定二价铁含量中存在的问题,将此测定方法改良为:对提取液不用浓硫酸或盐酸调节p H,直接先加入0.15%邻菲罗啉溶液2 m L,再加入3 mol·L-1 NH4F溶液2 m L,决定系数和变异系数分别为0.9998和10.23%,回归率达到了100.82%,适合植物组织中二价铁含量的精确测定。展开更多
文摘The current efficiency for NF3 formation was independent on the current density in the range of 200 to 1,000 mA·cm^2. The average values of NF3 current efficiencies on the BDD （boron-doped diamond） anode with the boron-concentration of 2,500 ppm were 32.3% at 80℃, 63.3% at 100℃ and 59.7% at 120℃. The best current efficiencies for NF3 formation on the BDD anode with boron-concentrations of 2,500, 5,000 and 7,500 ppm were obtained at 100℃ and those were 63.3%, 73.3% and 56.2%, respectively. Although anode effect occurred on the BDD electrodes covered with a part of the surface of the spiculate structure, which had the boron-concentrations higher than 7,500 ppm, it did not take place on the BDD electrodes covered with the surface of diamond structure, even if the BDD electrode had the boron-concentration of 8,000 ppm.
基金the National Natural Science Foundation of China(22005293 and U19A2092)the National Key Research and Development Program of China(2019YFA0405600).
文摘Hydrothermal deposition of antimony selenosulfide(Sb_(2)(S,Se_(3)))has enabled solar cell applications to surpass the 10%efficiency threshold.This deposition process involves the reaction of three precursor materials:Sb,S,and Se.However,this process generates an unfavourable gradient of Se and S anions in the Sb_(2)(S,Se)_(3)film,which limits further efficiency improvements.Herein,we demonstrate how NH_(4)F can be used as an additive to regulate the band gradient of the Sb_(2)(S,Se)_(3)and modify the surface of the CdS electron-transporting layer.On the one hand,NH_(4)F inhibits the decomposition of Na_(2)S_(2)O_(3)and selenourea,which optimizes the deposition process and allows for adjustment of the Se/S ratio and their distribution in the Sb_(2)(S,Se)_(3)film.On the other hand,hydrolysis of NH_(4)F induces dissolution and redeposition of CdS,thereby effectively improving the morphology and crystallinity of the CdS substrate.Finally,the dual effect of NH_(4)F enables improved surface morphology and energy alignment of the Sb_(2)(S,Se)_(3)film,thus yielding a maximum efficiency of 10.28%,a 12%improvement over the control device.This study demonstrates an effective strategy for simultaneously modifying a sulfide-based substrate and regulating the element distribution during the deposition of a metal chalcogenide film for optoelectronic device applications.
文摘针对NH4F掩蔽法测定二价铁含量中存在的问题,将此测定方法改良为:对提取液不用浓硫酸或盐酸调节p H,直接先加入0.15%邻菲罗啉溶液2 m L,再加入3 mol·L-1 NH4F溶液2 m L,决定系数和变异系数分别为0.9998和10.23%,回归率达到了100.82%,适合植物组织中二价铁含量的精确测定。
