The anomalous photovoltaic(APV)effect is promising for high-performance ferroelectric materials and devices in photoelectric applications.However,it is a challenge how to tune the APV effect by utilizing the character...The anomalous photovoltaic(APV)effect is promising for high-performance ferroelectric materials and devices in photoelectric applications.However,it is a challenge how to tune the APV effect by utilizing the characteristic structure of ferroelectrics.Here,a domain engineering strategy is proposed to enhance the APV effect in lead-free 0.88(Na_(0.5)Bi_(0.5)TiO_(3))-0.12(Ba_(1–1.5x)S_(mx)TiO_(3))(NBT-BST)ferroelectric ceramics.By tuning the domain size based on Sm^(3+)doping,a maximum open-circuit voltage(VOC)of 18.1 V is obtained when Sm^(3+)content is 0.75%,which is much larger than its bandgap(Eg).The mechanism of this large VOC originates from the multiple positive effects induced by the small-size domain,where decreasing domain size enhances ferroelectric polarization and net interface barrier potential,leading to a large driving electric field.Moreover,the APV effect exhibits a giant temperature sensitivity due to the dramatic evolution of small-size domain in the temperature field.This work sheds light on the exploration of ferroelectrics with APV effect and inspires their future high-performance optoelectronic device applications.展开更多
基金The authors acknowledge the support from the Natural Science Foundation of China(12264036)the Natural Science Foundation of Inner Mongolia(2021JQ06)+2 种基金Scientific and Technological Development Foundation of the Central Guidance Local(2021ZY0008)Youth Science and Technology Talents Project of Inner Mongolia(NJYT22061)“Light of the West”talent training program of Chinese Academy of Sciences,Talent Development Fund of Inner Mongolia and Grassland Talents of Inner Mongolia.
文摘The anomalous photovoltaic(APV)effect is promising for high-performance ferroelectric materials and devices in photoelectric applications.However,it is a challenge how to tune the APV effect by utilizing the characteristic structure of ferroelectrics.Here,a domain engineering strategy is proposed to enhance the APV effect in lead-free 0.88(Na_(0.5)Bi_(0.5)TiO_(3))-0.12(Ba_(1–1.5x)S_(mx)TiO_(3))(NBT-BST)ferroelectric ceramics.By tuning the domain size based on Sm^(3+)doping,a maximum open-circuit voltage(VOC)of 18.1 V is obtained when Sm^(3+)content is 0.75%,which is much larger than its bandgap(Eg).The mechanism of this large VOC originates from the multiple positive effects induced by the small-size domain,where decreasing domain size enhances ferroelectric polarization and net interface barrier potential,leading to a large driving electric field.Moreover,the APV effect exhibits a giant temperature sensitivity due to the dramatic evolution of small-size domain in the temperature field.This work sheds light on the exploration of ferroelectrics with APV effect and inspires their future high-performance optoelectronic device applications.
