It is well known that -nitride semiconductors can generate the magnitude of MV/cm polarization electric field which is comparable with their ionization electric fields. To take full advantage of the polarization elect...It is well known that -nitride semiconductors can generate the magnitude of MV/cm polarization electric field which is comparable with their ionization electric fields. To take full advantage of the polarization electric field, we design an N-face AlGaN solar-blind avalanche photodiode (APD) with an Al<sub>0.45</sub>Ga<sub>0.55</sub>N/Al<sub>0.3</sub>Ga<sub>0.7</sub>N heterostructure as separate absorption and multiplication (SAM) regions. The simulation results show that the N-face APDs are more beneficial to improving the avalanche gain and reducing the avalanche breakdown voltage compared with the Ga-face APDs due to the effect of the polarization electric field. Furthermore, the Al<sub>0.45</sub>Ga<sub>0.55</sub>N/Al<sub>0.3</sub>Ga<sub>0.7</sub>N heterostructure SAM regions used in APDs instead of homogeneous Al<sub>0.45</sub>Ga<sub>0.55</sub>N SAM structure can increase significantly avalanche gain because of the increased hole ionization coefficient by using the relatively low Al-content AlGaN in the multiplication region. Meanwhile, a quarter-wave AlGaN/AlN distributed Bragg reflector structure at the bottom of the device is designed to remain a solar-blind characteristic of the heterostructure SAM-APDs.展开更多
【目的】揭示大气CO2浓度升高和氮肥管理对地下生态系统的影响。【方法】采用中国稻麦轮作FACE(Free-Air CO2 Enrichment)系统平台,开展了大气CO2浓度升高和氮肥管理对土壤线虫群落组成影响的研究。【结果】在稻麦轮作系统共观察到线虫3...【目的】揭示大气CO2浓度升高和氮肥管理对地下生态系统的影响。【方法】采用中国稻麦轮作FACE(Free-Air CO2 Enrichment)系统平台,开展了大气CO2浓度升高和氮肥管理对土壤线虫群落组成影响的研究。【结果】在稻麦轮作系统共观察到线虫35属,15个功能团。拟丽突属、真头叶属、丝尾属和潜根属为优势属,其中丝尾属和真头叶属对CO2浓度升高和氮肥管理反应敏感。在CO2浓度升高条件下土壤线虫总数、功能团Fu2和Om4的线虫多度均显著增加,其中Fu2多度在CO2和氮肥的交互影响下变化明显。【结论】CO2浓度升高和氮肥管理改变了土壤腐屑食物网的结构和有机质的分解途径。高氮条件下,CO2浓度升高降低了线虫的通路指数(CI),细菌为主的分解通道在小麦季的FACE(HN)处理中占优势。不同施氮水平对线虫结构指数(SI)产生显著影响,低氮条件下较高的SI值表明土壤环境受到的扰动较小,食物网处于结构化状态。展开更多
以Ti/Al/Ni/Au作为欧姆接触金属体系,通过电感耦合等离子体(ICP)刻蚀的预处理,在氢化物气相外延法生长的单晶氮化镓(GaN)材料的N面实现了良好的欧姆接触,其比接触电阻率为3.7×10-4Ω·cm^2。通过扫描电子显微镜、原子力显微镜...以Ti/Al/Ni/Au作为欧姆接触金属体系,通过电感耦合等离子体(ICP)刻蚀的预处理,在氢化物气相外延法生长的单晶氮化镓(GaN)材料的N面实现了良好的欧姆接触,其比接触电阻率为3.7×10-4Ω·cm^2。通过扫描电子显微镜、原子力显微镜、阴极荧光和光致发光谱对GaN N面的表面、光学特性进行了对比表征。结果表明:未刻蚀GaN衬底的N面表面存在一定的损伤层,导致近表面处含有大量缺陷,不利于欧姆接触的形成;而ICP刻蚀处理有效地去除了损伤层。X射线光电子能谱(XPS)分析显示刻蚀后样品的Ga 3d结合能比未刻蚀样品向高能方向移动了约0.3 e V,其肖特基势垒则相应降低,有利于欧姆接触的形成。同时对Fe掺杂半绝缘GaN的N面也进行了刻蚀处理,同样实现了良好的Ti/Al/Ni/Au欧姆接触,其比接触电阻率为0.12Ω·cm^2。展开更多
基金Supported by the State Key Project of Research and Development Plan of China under Grant No 2016YFB0400903the National Natural Science Foundation of China under Grant Nos 61634002,61274075 and 61474060+2 种基金the Key Project of Jiangsu Province under Grant No BE2016174the Anhui University Natural Science Research Project under Grant No KJ2015A153the Open Fund of State KeyLab of Optical Technologies on Nano-fabrication and Micro-engineering
文摘It is well known that -nitride semiconductors can generate the magnitude of MV/cm polarization electric field which is comparable with their ionization electric fields. To take full advantage of the polarization electric field, we design an N-face AlGaN solar-blind avalanche photodiode (APD) with an Al<sub>0.45</sub>Ga<sub>0.55</sub>N/Al<sub>0.3</sub>Ga<sub>0.7</sub>N heterostructure as separate absorption and multiplication (SAM) regions. The simulation results show that the N-face APDs are more beneficial to improving the avalanche gain and reducing the avalanche breakdown voltage compared with the Ga-face APDs due to the effect of the polarization electric field. Furthermore, the Al<sub>0.45</sub>Ga<sub>0.55</sub>N/Al<sub>0.3</sub>Ga<sub>0.7</sub>N heterostructure SAM regions used in APDs instead of homogeneous Al<sub>0.45</sub>Ga<sub>0.55</sub>N SAM structure can increase significantly avalanche gain because of the increased hole ionization coefficient by using the relatively low Al-content AlGaN in the multiplication region. Meanwhile, a quarter-wave AlGaN/AlN distributed Bragg reflector structure at the bottom of the device is designed to remain a solar-blind characteristic of the heterostructure SAM-APDs.
文摘【目的】揭示大气CO2浓度升高和氮肥管理对地下生态系统的影响。【方法】采用中国稻麦轮作FACE(Free-Air CO2 Enrichment)系统平台,开展了大气CO2浓度升高和氮肥管理对土壤线虫群落组成影响的研究。【结果】在稻麦轮作系统共观察到线虫35属,15个功能团。拟丽突属、真头叶属、丝尾属和潜根属为优势属,其中丝尾属和真头叶属对CO2浓度升高和氮肥管理反应敏感。在CO2浓度升高条件下土壤线虫总数、功能团Fu2和Om4的线虫多度均显著增加,其中Fu2多度在CO2和氮肥的交互影响下变化明显。【结论】CO2浓度升高和氮肥管理改变了土壤腐屑食物网的结构和有机质的分解途径。高氮条件下,CO2浓度升高降低了线虫的通路指数(CI),细菌为主的分解通道在小麦季的FACE(HN)处理中占优势。不同施氮水平对线虫结构指数(SI)产生显著影响,低氮条件下较高的SI值表明土壤环境受到的扰动较小,食物网处于结构化状态。
文摘以Ti/Al/Ni/Au作为欧姆接触金属体系,通过电感耦合等离子体(ICP)刻蚀的预处理,在氢化物气相外延法生长的单晶氮化镓(GaN)材料的N面实现了良好的欧姆接触,其比接触电阻率为3.7×10-4Ω·cm^2。通过扫描电子显微镜、原子力显微镜、阴极荧光和光致发光谱对GaN N面的表面、光学特性进行了对比表征。结果表明:未刻蚀GaN衬底的N面表面存在一定的损伤层,导致近表面处含有大量缺陷,不利于欧姆接触的形成;而ICP刻蚀处理有效地去除了损伤层。X射线光电子能谱(XPS)分析显示刻蚀后样品的Ga 3d结合能比未刻蚀样品向高能方向移动了约0.3 e V,其肖特基势垒则相应降低,有利于欧姆接触的形成。同时对Fe掺杂半绝缘GaN的N面也进行了刻蚀处理,同样实现了良好的Ti/Al/Ni/Au欧姆接触,其比接触电阻率为0.12Ω·cm^2。
