Ultra-thin-body （UTB） In0.53Ga0.47As-on-insulator （In0.53Ga0.47As-OI） structures with thicknesses of 8 and 15nm are realized by transferring epitaxially grown In0.53Ga0.47As layers to silicon substrates with 15-nm...Ultra-thin-body （UTB） In0.53Ga0.47As-on-insulator （In0.53Ga0.47As-OI） structures with thicknesses of 8 and 15nm are realized by transferring epitaxially grown In0.53Ga0.47As layers to silicon substrates with 15-nmthick A12 03 as a buried oxide by using the direct wafer bonding method. Back gate n-channel metal-oxidesemiconductor field-effect transistors （nMOSFETs） are fabricated by using these In0.53Ga0.47As-OI structures with excellent electrical characteristics. Positive bias temperature instability （PBTI） and hot carrier injection （HCI） characterizations are performed for the In0.53Ga0.47As-OI nMOSFETs. It is confirmed that the In0.53Ga0.47 As-OI nMOSFETs with a thinner body thickness suffer from more severe degradations under both PBTI and HCr stresses. Moreover, the different evolutions of the threshold voltage and the saturation current of the UTB In0.53Ga0.47As-OI nMOSFETs may be due to the slow border traps.展开更多
This paper presents two n-channel organic heterojunction transistors with modified insulator by using hexadecafiuorophthalocyaninatocopper （F16CuPc）/copper phthalocyanine （CuPc） and F16CuPc/pentacene as the active...This paper presents two n-channel organic heterojunction transistors with modified insulator by using hexadecafiuorophthalocyaninatocopper （F16CuPc）/copper phthalocyanine （CuPc） and F16CuPc/pentacene as the active layers. Compared with a single-layer device, it reports that an improved field-effect mobility and a 6-fold higher drain current are observed. The highest mobility of 0.081 cm^2/（V. s） was obtained from F16CuPc/CuPc heterojunction devices. This result is attributed to the dual effects of the organic heterojunction and interface modification. Furthermore, for two heterojunction devices, the performance of the F16CuPc/CuPc-based transistor is better than that of F16CuPc/pentacene. This is attributed to the morphologic match of two organic components.展开更多
Polymer field-effect transistors operated in the n-channel model with a top-gate/bottom-contact are processed using a solution method. The transistor performance depends on the gate dielectric layer. A high performanc...Polymer field-effect transistors operated in the n-channel model with a top-gate/bottom-contact are processed using a solution method. The transistor performance depends on the gate dielectric layer. A high performance polymer transistor is achieved, with the saturated electron mobility of about 0.46cm2/Vs, threshold voltage nearly 0 V and subthreshold sway of about 0.9 V/decade, employing a polystyrene （PS） dielectric layer. The transistor performances are further improved with increasing current and lower operation voltages by utilizing a bi-layer gate dielectric, comprising a thin PS dielectric layer adjacent to the semiconductor to minimize the density of the interface traps for obtaining a small VT, a large μ and a poly（methyl methacrylate） （PMMA） dielectric layer with a relatively high-k adjacent to the gate electrode for enlarging the capacitance, processed from the orthogonal solvents.展开更多
Large π-conjugated pyrene-phenazine monoimide and bisimides were synthesized by imine condensation reaction. These imides form well ordered 1D nanotapes upon self-assembly in solution. Electrochemical and electric co...Large π-conjugated pyrene-phenazine monoimide and bisimides were synthesized by imine condensation reaction. These imides form well ordered 1D nanotapes upon self-assembly in solution. Electrochemical and electric conductivity measurement reveal it can be served as an n-channel semiconductor with large charge carrier mobility up to 4.1 cm^2 V^-1 s^-1. Both alkylated imides are highly luminescent, and can be quenched via protonization using trifluoroacetic acid, which could be served as potential colorimetric acid sensors.展开更多
Owing to the conductivity modulation of silicon carbide（Si C） bipolar devices, n-channel insulated gate bipolar transistors（n-IGBTs） have a significant advantage over metal oxide semiconductor field effect transis...Owing to the conductivity modulation of silicon carbide（Si C） bipolar devices, n-channel insulated gate bipolar transistors（n-IGBTs） have a significant advantage over metal oxide semiconductor field effect transistors（MOSFETs） in ultra high voltage（UHV） applications. In this paper, backside grinding and laser annealing process were carried out to fabricate 4 H-Si C n-IGBTs. The thickness of a drift layer was 120 μm, which was designed for a blocking voltage of 13 k V. The n-IGBTs carried a collector current density of 24 A/cm^2 at a power dissipation of300 W/cm^2 when the gate voltage was 20 V, with a differential specific on-resistance of 140 mΩ·cm^2.展开更多
基金Supported by the National Program on Key Basic Research Project of China under Grant No 2011CBA00607the National Natural Science Foundation of China under Grant Nos 61106089 and 61376097the Zhejiang Provincial Natural Science Foundation of China under Grant No LR14F040001
文摘Ultra-thin-body （UTB） In0.53Ga0.47As-on-insulator （In0.53Ga0.47As-OI） structures with thicknesses of 8 and 15nm are realized by transferring epitaxially grown In0.53Ga0.47As layers to silicon substrates with 15-nmthick A12 03 as a buried oxide by using the direct wafer bonding method. Back gate n-channel metal-oxidesemiconductor field-effect transistors （nMOSFETs） are fabricated by using these In0.53Ga0.47As-OI structures with excellent electrical characteristics. Positive bias temperature instability （PBTI） and hot carrier injection （HCI） characterizations are performed for the In0.53Ga0.47As-OI nMOSFETs. It is confirmed that the In0.53Ga0.47 As-OI nMOSFETs with a thinner body thickness suffer from more severe degradations under both PBTI and HCr stresses. Moreover, the different evolutions of the threshold voltage and the saturation current of the UTB In0.53Ga0.47As-OI nMOSFETs may be due to the slow border traps.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60806007)the Shanghai ‘Post-Qi-Ming-Xing Plan’ for Young Scientists,China (Grant No. 07QA14023)the Shanghai Committee of Science and Technology (Grant Nos. 08DZ1140702 and 08520511200)
文摘This paper presents two n-channel organic heterojunction transistors with modified insulator by using hexadecafiuorophthalocyaninatocopper （F16CuPc）/copper phthalocyanine （CuPc） and F16CuPc/pentacene as the active layers. Compared with a single-layer device, it reports that an improved field-effect mobility and a 6-fold higher drain current are observed. The highest mobility of 0.081 cm^2/（V. s） was obtained from F16CuPc/CuPc heterojunction devices. This result is attributed to the dual effects of the organic heterojunction and interface modification. Furthermore, for two heterojunction devices, the performance of the F16CuPc/CuPc-based transistor is better than that of F16CuPc/pentacene. This is attributed to the morphologic match of two organic components.
基金Supported by the National Natural Science Foundation of China under Grant No 61177028
文摘Polymer field-effect transistors operated in the n-channel model with a top-gate/bottom-contact are processed using a solution method. The transistor performance depends on the gate dielectric layer. A high performance polymer transistor is achieved, with the saturated electron mobility of about 0.46cm2/Vs, threshold voltage nearly 0 V and subthreshold sway of about 0.9 V/decade, employing a polystyrene （PS） dielectric layer. The transistor performances are further improved with increasing current and lower operation voltages by utilizing a bi-layer gate dielectric, comprising a thin PS dielectric layer adjacent to the semiconductor to minimize the density of the interface traps for obtaining a small VT, a large μ and a poly（methyl methacrylate） （PMMA） dielectric layer with a relatively high-k adjacent to the gate electrode for enlarging the capacitance, processed from the orthogonal solvents.
基金supported by the National Natural Science Foundation of China(Nos. 51522303, 21602154)National Key R&D Program of China (No. 2017YFA0207500)the Thousand Youth Talents Plan
文摘Large π-conjugated pyrene-phenazine monoimide and bisimides were synthesized by imine condensation reaction. These imides form well ordered 1D nanotapes upon self-assembly in solution. Electrochemical and electric conductivity measurement reveal it can be served as an n-channel semiconductor with large charge carrier mobility up to 4.1 cm^2 V^-1 s^-1. Both alkylated imides are highly luminescent, and can be quenched via protonization using trifluoroacetic acid, which could be served as potential colorimetric acid sensors.
文摘Owing to the conductivity modulation of silicon carbide（Si C） bipolar devices, n-channel insulated gate bipolar transistors（n-IGBTs） have a significant advantage over metal oxide semiconductor field effect transistors（MOSFETs） in ultra high voltage（UHV） applications. In this paper, backside grinding and laser annealing process were carried out to fabricate 4 H-Si C n-IGBTs. The thickness of a drift layer was 120 μm, which was designed for a blocking voltage of 13 k V. The n-IGBTs carried a collector current density of 24 A/cm^2 at a power dissipation of300 W/cm^2 when the gate voltage was 20 V, with a differential specific on-resistance of 140 mΩ·cm^2.
