In the present study,WB 2（N） films are fabricated on silicon and YG8 substrates at different N 2 pressures by reactive magnetron sputtering.The influence of N 2 partial pressure（P （N2）） on the film microstructur...In the present study,WB 2（N） films are fabricated on silicon and YG8 substrates at different N 2 pressures by reactive magnetron sputtering.The influence of N 2 partial pressure（P （N2）） on the film microstructure and characteristics is studied systematically,including the chemical composition,crystalline structure,residual stress,surface roughness as well as the surface and the cross-section morphology.Meanwhile,nano-indentation and ball-on-disk tribometer are performed to analyze the mechanical and tribological properties of the films.The results show that the addition of nitrogen apparently leads to the change of the structure from（1 0 1） to（0 0 1） orientation then to the amorphous structure with the formation of BN phase.And the addition of nitrogen can greatly refine the grain size and microstructure of the films.Furthermore,the residual stress of the film is also found to change from tensile to compressive stress as a function of P （N2）,and the compressive stress increases with P （N2）,The WB 2（N） films with small nitrogen content,which are deposited at P （N2） of 0.004 and 0.006 Pa,exhibit better mechanical,tribological and corrosion properties than those of other films.Further increase of nitrogen content accelerates the formation of BN phase and fast decreases the film hardness.In addition,the large N 2 partial pressure gives rise to the target poisoning accompanied by the increase of the target voltage and the decrease of the deposition rate.展开更多
In this paper,the fracture surfaces of a light-conversion film were observed using a scanning electron microscope(SEM),and then,the fluorescence spectra and mechanical properties of the film were tested.The SEM result...In this paper,the fracture surfaces of a light-conversion film were observed using a scanning electron microscope(SEM),and then,the fluorescence spectra and mechanical properties of the film were tested.The SEM results show that the average diameter of the light conversion agent is 500 nm.The results of the mechanical properties tests show that the tensile strengths of light-conversion film increase from9.86 to 12.16 MPa and that the strain at breakage increases from 2.37%to 2.75%.In addition,the application effects of the light-co nversion film were studied.The results indicate that plant height,length of the maximum leaf,width of the maximum leaf and breadth of the plants increase by 24.43%,15.30%,15.60%and 19.07%,respectively.The quality of Chinese flowering cabbages treated with the lightconversion film is superior,including a 9.09%increase in the soluble protein content,a 21.27%increase in the polyphenol content,and a 19.15%increase in the soluble sugar content.Based on these results,light-conversion films can be applied in agricultural production.展开更多
TiO2 thin film has attracted considerable attention in recent years, due to its different refractive index and transparency with amorphous and different crysta ls in the visible and near-infrared wavelength region, hi...TiO2 thin film has attracted considerable attention in recent years, due to its different refractive index and transparency with amorphous and different crysta ls in the visible and near-infrared wavelength region, high dielectric constant, wide band gap, high wear resistance and stability, etc, for which make it being used in many fields. This paper aims to investigate the optical characterizatio n of thin film TiO2 on silicon wafer. The TiO2 thin films were prepared by DC re active magnetron sputtering process from Ti target. The reflectivity of the film s was measured by UV-3101PC, and the index of refraction (n) and extinction coef ficient (k) were measured by n & k Analyzer 1200.展开更多
The work is mainly to study the thermal stability including the phase stability, microstructure and tribo-mechanical properties of the AlB_2-type WB_2 and W–B–N(5.6 at.% N) films annealed in vacuum at various temper...The work is mainly to study the thermal stability including the phase stability, microstructure and tribo-mechanical properties of the AlB_2-type WB_2 and W–B–N(5.6 at.% N) films annealed in vacuum at various temperatures, which are deposited on Si and GY8 substrates by magnetron sputtering. For the WB_2 and W–B–N films deposited on Si wafers, as the annealing temperature increases from 700 to 1000 °C, a-WB(700 °C) and Mo_2B_5-type WB_2(1000 °C) are successively observed in the AlB_2-type WB_2 films, which show many cracks at the temperature ≥ 800 °C resulting in the performance failure; by contrast, only slight α-WB is observed at 1000 °C in the W–B–N films due to the stabilization eff ect of a-BN phase, and the hardness increases to 34.1 GPa fi rst due to the improved crystallinity and then decreases to 31.5 GPa ascribed to the formation of α-WB. For the WB_2 and the W–B–N films deposited on WC–Co substrates, both the WB_2 and W–B–N films react with the YG8(WC–Co) substrates leading to the formation of CoWB, CoW_2B_2 and CoW_3B_3 with the annealing temperature increasing to 900 °C; a large number of linear cracks occur on the surface of these two films annealed at ≥ 800 °C leading to the fi lm failure; after vacuum annealing at 700 °C, the friction performance of the W–B–N films is higher than that of the deposited W–B–N films, while the wear resistance of the WB_2 films shows a slight decrease compared with that of the deposited WB_2 films.展开更多
Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships amon...Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships among the important electrical parameters of the samples with different thickness SiO2-Si3N4 films,such as threshold voltage,breakdown voltage,and on-state resistance in accumulated dose,are discussed.The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose.However,the relationships between the threshold voltages of the samples and the accumulated dose are more complex,and not only positively drift,but also negatively drift.At the end of the total dose experiment,we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies.We find that the samples with appropriate thickness ratio SiO2-Si3N4 films have a good radiation-hardening ability.This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-Si3N4 films.展开更多
以TiCl_3(3THF)为原料合成脒基钛(Ⅲ)配合物1,将其作为前驱体通过LPCVD沉积N/C-TiO_2薄膜。利用1HNMR、元素分析以及热重分析(TGA)探究配合物1的结构和热化学性质。结果表明,配合物1具有良好的热稳定性和合适的挥发性,满足CVD的要求。通...以TiCl_3(3THF)为原料合成脒基钛(Ⅲ)配合物1,将其作为前驱体通过LPCVD沉积N/C-TiO_2薄膜。利用1HNMR、元素分析以及热重分析(TGA)探究配合物1的结构和热化学性质。结果表明,配合物1具有良好的热稳定性和合适的挥发性,满足CVD的要求。通过EDS和UV-Vis吸收光谱表征了薄膜的成分及光学性能,结果表明,当沉积温度为350℃时,N/C-TiO_2薄膜的N、C质量分数最高,其禁带宽度降低为2. 82 e V,对可见光的吸收最强。与纯的二氧化钛薄膜相比,N/C-TiO_2薄膜对亚甲基蓝的降解率显著提高到90%。展开更多
P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn3N2 films. The prepared films are characterized by x-ray diffraction, non-Rutherford back.scattering （non-RBS） spectroscopy...P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn3N2 films. The prepared films are characterized by x-ray diffraction, non-Rutherford back.scattering （non-RBS） spectroscopy, x- ray photoelectron spectroscopy, and photoluminescence spectrum. The results show that the Zn3N1 films start to transform to ZnO at 400℃ and the total nitrogen content decreases with the increasing annealing temperature. The p-type fihns are achieved at 500℃ with a low resistivity of 6.33Ω.cm and a high hole concentration of ＋8.82 × 10^17 cm-3, as well as a low level of carbon contamination, indicating that the substitutional nitrogen （No） is an effective acceptor in the ZnO：N film. The photoluminescence spectra show clear UV emissions and also indicate the presence of oxygen vacancy （Vo） defects in the ZnO：N films. The p-type doping mechanism is briefly discussed.展开更多
Copper nitride thin films were deposited on glass substrates by reactive direct current （DC） magnetron sputtering at various N2-gas partial pressures and room temperature. Xray diffraction measurements showed that t...Copper nitride thin films were deposited on glass substrates by reactive direct current （DC） magnetron sputtering at various N2-gas partial pressures and room temperature. Xray diffraction measurements showed that the films were composed of Cu3N crystallites and exhibited a preferential orientation of the [111] direction at a low nitrogen gas （N2） partial pressure. The film growth preferred the [111] and the [100] direction at a high N2 partial pressure. Such preferential film growth is interpreted as being due to the variation in the Copper （Cu） nitrification rate with the N2 pressure. The N2 partial pressure affects not only the crystal structure of the film but also the deposition rate and the resistivity of the Cu3N film. In our experiment, the deposition rate of Cu3N films was 18 nm/min to 30 nm/min and increased with the N2 partial pressure. The resistivity of the Cu3N films increased sharply with the increasing N2 partial pressure. At a low N2 partial pressure, the Cu3N films showed a metallic conduction mechanism through the Cu path, and at a high N2 partial pressure, the conductivity of the Cu3N films showed a semiconductor conduction mechanism.展开更多
The activated chemisorption of N<sub>2</sub> on Ni （poly） and La film was performed on a molecular beam—surface scattering apparatus. Experimental results indicate that the initial sticking probability ...The activated chemisorption of N<sub>2</sub> on Ni （poly） and La film was performed on a molecular beam—surface scattering apparatus. Experimental results indicate that the initial sticking probability s<sub>o</sub> increases linearly from 0 to 0.03 as normal component of translational energy of the molecuar beam E<sub>n</sub> increases from 11.00 to 19.91 kcal/mol for N<sub>2</sub>/Ni system and S<sub>0</sub> from 0 to 0. 10 as E<sub>n</sub> from 10. 40 to 19.91 kcal/mol for N<sub>2</sub>/La system. The apparent activation energy △E are 6.16 kcal/mol and 5.30 kcal/mol for N<sub>2</sub>/Ni and N<sub>2</sub>/La systems respectively.展开更多
We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the ...We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.展开更多
In this study,the influence of substrate temperature on properties of Al-N co-doped p-type ZnO films is explored.Benefitting from the high ionization rate in high-power impulsed magnetron sputtering,the concentration ...In this study,the influence of substrate temperature on properties of Al-N co-doped p-type ZnO films is explored.Benefitting from the high ionization rate in high-power impulsed magnetron sputtering,the concentration of ionized nitrogen N+and ionized zinc Zn+were increased,which promoted the formation of ZnO films and lowered the necessary substrate temperature.After optimization,a co-doped p-type ZnO thin film with a resistivity lower than 0.35Ωcm and a hole concentration higher than 5.34×10^(18)cm^(-3)is grown at 280°C.X-ray diffraction results confirm that Al-N co-doping does not destruct the ZnO wurtzite structure.X-ray photoelectron spectroscopy demonstrates that the presence of Al promotes the formation of acceptor(No)defects in ZnO films,and ensures the role of Al in stabilizing p-type ZnO.展开更多
基金supported by the National Key Basic Research Program of China (973 Program,No.2012CB625100)the Natural Science Foundation of Liaoning Province of China (No.2013020093)
文摘In the present study,WB 2（N） films are fabricated on silicon and YG8 substrates at different N 2 pressures by reactive magnetron sputtering.The influence of N 2 partial pressure（P （N2）） on the film microstructure and characteristics is studied systematically,including the chemical composition,crystalline structure,residual stress,surface roughness as well as the surface and the cross-section morphology.Meanwhile,nano-indentation and ball-on-disk tribometer are performed to analyze the mechanical and tribological properties of the films.The results show that the addition of nitrogen apparently leads to the change of the structure from（1 0 1） to（0 0 1） orientation then to the amorphous structure with the formation of BN phase.And the addition of nitrogen can greatly refine the grain size and microstructure of the films.Furthermore,the residual stress of the film is also found to change from tensile to compressive stress as a function of P （N2）,and the compressive stress increases with P （N2）,The WB 2（N） films with small nitrogen content,which are deposited at P （N2） of 0.004 and 0.006 Pa,exhibit better mechanical,tribological and corrosion properties than those of other films.Further increase of nitrogen content accelerates the formation of BN phase and fast decreases the film hardness.In addition,the large N 2 partial pressure gives rise to the target poisoning accompanied by the increase of the target voltage and the decrease of the deposition rate.
基金Project supported by the National Natural Science Foundation of China(21671070)Key Realm R&D Program of Guangdong Province(2019B020214001,2019B020223001)+2 种基金China Agriculture Research System(CARS-26)Guangdong Provincial Special Fund for Modern Agriculture Industry Technology Innovation Teams(2019LM119)the National Undergraduate Innovation and Entrepreneurship Training Program granted for Gening Xie(201910564035)。
文摘In this paper,the fracture surfaces of a light-conversion film were observed using a scanning electron microscope(SEM),and then,the fluorescence spectra and mechanical properties of the film were tested.The SEM results show that the average diameter of the light conversion agent is 500 nm.The results of the mechanical properties tests show that the tensile strengths of light-conversion film increase from9.86 to 12.16 MPa and that the strain at breakage increases from 2.37%to 2.75%.In addition,the application effects of the light-co nversion film were studied.The results indicate that plant height,length of the maximum leaf,width of the maximum leaf and breadth of the plants increase by 24.43%,15.30%,15.60%and 19.07%,respectively.The quality of Chinese flowering cabbages treated with the lightconversion film is superior,including a 9.09%increase in the soluble protein content,a 21.27%increase in the polyphenol content,and a 19.15%increase in the soluble sugar content.Based on these results,light-conversion films can be applied in agricultural production.
基金This work was supported by the National Natural Science Foundation of China(No,50376067)the Plan for Science&Technology Development of Guangzhou(2001-Z-117-01).
文摘TiO2 thin film has attracted considerable attention in recent years, due to its different refractive index and transparency with amorphous and different crysta ls in the visible and near-infrared wavelength region, high dielectric constant, wide band gap, high wear resistance and stability, etc, for which make it being used in many fields. This paper aims to investigate the optical characterizatio n of thin film TiO2 on silicon wafer. The TiO2 thin films were prepared by DC re active magnetron sputtering process from Ti target. The reflectivity of the film s was measured by UV-3101PC, and the index of refraction (n) and extinction coef ficient (k) were measured by n & k Analyzer 1200.
基金supported by the National Natural Science Foundation of China (Nos. 51701157 and 51505378)the Natural Science Foundation of Shaanxi Province of China (No. 2017JQ5031)
文摘The work is mainly to study the thermal stability including the phase stability, microstructure and tribo-mechanical properties of the AlB_2-type WB_2 and W–B–N(5.6 at.% N) films annealed in vacuum at various temperatures, which are deposited on Si and GY8 substrates by magnetron sputtering. For the WB_2 and W–B–N films deposited on Si wafers, as the annealing temperature increases from 700 to 1000 °C, a-WB(700 °C) and Mo_2B_5-type WB_2(1000 °C) are successively observed in the AlB_2-type WB_2 films, which show many cracks at the temperature ≥ 800 °C resulting in the performance failure; by contrast, only slight α-WB is observed at 1000 °C in the W–B–N films due to the stabilization eff ect of a-BN phase, and the hardness increases to 34.1 GPa fi rst due to the improved crystallinity and then decreases to 31.5 GPa ascribed to the formation of α-WB. For the WB_2 and the W–B–N films deposited on WC–Co substrates, both the WB_2 and W–B–N films react with the YG8(WC–Co) substrates leading to the formation of CoWB, CoW_2B_2 and CoW_3B_3 with the annealing temperature increasing to 900 °C; a large number of linear cracks occur on the surface of these two films annealed at ≥ 800 °C leading to the fi lm failure; after vacuum annealing at 700 °C, the friction performance of the W–B–N films is higher than that of the deposited W–B–N films, while the wear resistance of the WB_2 films shows a slight decrease compared with that of the deposited WB_2 films.
文摘Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor（VDMOS） devices with composite SiO2-Si3N4 film gates are investigated.The relationships among the important electrical parameters of the samples with different thickness SiO2-Si3N4 films,such as threshold voltage,breakdown voltage,and on-state resistance in accumulated dose,are discussed.The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose.However,the relationships between the threshold voltages of the samples and the accumulated dose are more complex,and not only positively drift,but also negatively drift.At the end of the total dose experiment,we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies.We find that the samples with appropriate thickness ratio SiO2-Si3N4 films have a good radiation-hardening ability.This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-Si3N4 films.
文摘以TiCl_3(3THF)为原料合成脒基钛(Ⅲ)配合物1,将其作为前驱体通过LPCVD沉积N/C-TiO_2薄膜。利用1HNMR、元素分析以及热重分析(TGA)探究配合物1的结构和热化学性质。结果表明,配合物1具有良好的热稳定性和合适的挥发性,满足CVD的要求。通过EDS和UV-Vis吸收光谱表征了薄膜的成分及光学性能,结果表明,当沉积温度为350℃时,N/C-TiO_2薄膜的N、C质量分数最高,其禁带宽度降低为2. 82 e V,对可见光的吸收最强。与纯的二氧化钛薄膜相比,N/C-TiO_2薄膜对亚甲基蓝的降解率显著提高到90%。
基金Supported by the National Natural Science Foundation of China under Grant Nos 10775033 and 11075038
文摘P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn3N2 films. The prepared films are characterized by x-ray diffraction, non-Rutherford back.scattering （non-RBS） spectroscopy, x- ray photoelectron spectroscopy, and photoluminescence spectrum. The results show that the Zn3N1 films start to transform to ZnO at 400℃ and the total nitrogen content decreases with the increasing annealing temperature. The p-type fihns are achieved at 500℃ with a low resistivity of 6.33Ω.cm and a high hole concentration of ＋8.82 × 10^17 cm-3, as well as a low level of carbon contamination, indicating that the substitutional nitrogen （No） is an effective acceptor in the ZnO：N film. The photoluminescence spectra show clear UV emissions and also indicate the presence of oxygen vacancy （Vo） defects in the ZnO：N films. The p-type doping mechanism is briefly discussed.
基金the Key Programme of the Education Department of Hubei Province,China(2003A001,D200529002)
文摘Copper nitride thin films were deposited on glass substrates by reactive direct current （DC） magnetron sputtering at various N2-gas partial pressures and room temperature. Xray diffraction measurements showed that the films were composed of Cu3N crystallites and exhibited a preferential orientation of the [111] direction at a low nitrogen gas （N2） partial pressure. The film growth preferred the [111] and the [100] direction at a high N2 partial pressure. Such preferential film growth is interpreted as being due to the variation in the Copper （Cu） nitrification rate with the N2 pressure. The N2 partial pressure affects not only the crystal structure of the film but also the deposition rate and the resistivity of the Cu3N film. In our experiment, the deposition rate of Cu3N films was 18 nm/min to 30 nm/min and increased with the N2 partial pressure. The resistivity of the Cu3N films increased sharply with the increasing N2 partial pressure. At a low N2 partial pressure, the Cu3N films showed a metallic conduction mechanism through the Cu path, and at a high N2 partial pressure, the conductivity of the Cu3N films showed a semiconductor conduction mechanism.
基金Project supportec by the National Natural Science Foundation of China
文摘The activated chemisorption of N<sub>2</sub> on Ni （poly） and La film was performed on a molecular beam—surface scattering apparatus. Experimental results indicate that the initial sticking probability s<sub>o</sub> increases linearly from 0 to 0.03 as normal component of translational energy of the molecuar beam E<sub>n</sub> increases from 11.00 to 19.91 kcal/mol for N<sub>2</sub>/Ni system and S<sub>0</sub> from 0 to 0. 10 as E<sub>n</sub> from 10. 40 to 19.91 kcal/mol for N<sub>2</sub>/La system. The apparent activation energy △E are 6.16 kcal/mol and 5.30 kcal/mol for N<sub>2</sub>/Ni and N<sub>2</sub>/La systems respectively.
文摘We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.
基金supported by National Natural Science Foundation of China(Nos.11875090,12075032,11775028,11875088,11974048)Beijing Municipal National Science Foundation(Nos.1192008,KZ202010015022)BIGC(Nos.Ea201901,Ee202001)。
文摘In this study,the influence of substrate temperature on properties of Al-N co-doped p-type ZnO films is explored.Benefitting from the high ionization rate in high-power impulsed magnetron sputtering,the concentration of ionized nitrogen N+and ionized zinc Zn+were increased,which promoted the formation of ZnO films and lowered the necessary substrate temperature.After optimization,a co-doped p-type ZnO thin film with a resistivity lower than 0.35Ωcm and a hole concentration higher than 5.34×10^(18)cm^(-3)is grown at 280°C.X-ray diffraction results confirm that Al-N co-doping does not destruct the ZnO wurtzite structure.X-ray photoelectron spectroscopy demonstrates that the presence of Al promotes the formation of acceptor(No)defects in ZnO films,and ensures the role of Al in stabilizing p-type ZnO.
