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Modeling of Biomethane Production from Multiple Organic Wastes based on Modified ADM1
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作者 Yujing Guan Yange Yu +3 位作者 Zhiqiang Hou Fangze Shang Guangli Cao Ping Yang 《Journal of Harbin Institute of Technology(New Series)》 2025年第2期1-13,共13页
The Anaerobic Digestion Model No.1(ADM1)has been modified to include enhanced kinetic parameters,which more precisely simulate methane production during the anaerobic digestion of diverse organic solid wastes.Calibrat... The Anaerobic Digestion Model No.1(ADM1)has been modified to include enhanced kinetic parameters,which more precisely simulate methane production during the anaerobic digestion of diverse organic solid wastes.Calibration and validation of the model were achieved using experimental data from batch fermentation processes.Simulations of the updated ADM1 were conducted using AQUASIM 2.0 software.Sensitivity analysis helped identify and assess the most critical kinetic parameters affecting biogas production.Key parameters such as the microorganism decay constant(d^(-1)),disintegration rate constant(d^(-1)),Monod maximum specific substrate uptake rate(gCOD/gVSS·d),and half⁃saturation constants were found to significantly influence biogas yield.The optimal values for these parameters were identified as 0.03,6.07,3.64,and 0.27,respectively.These optimized values were validated through batch experiments.The modified ADM1 successfully predicted methane production,achieving R2 values greater than 0.8 in all validation trials.Key methanogens,Methanosarcina and Methanosaeta,were identified,and their enrichment during mixed fermentation of various organic solid wastes indicated enhanced methane production via aceticlastic methanogenesis.The microbial characterization and simulations using the modified ADM1 model supported each other. 展开更多
关键词 ADM1 anaerobic digestion METHANE multiple substrates microbial communities
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Metamorphic growth of 1.55 μm InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates
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作者 李小波 黄永清 +7 位作者 王俊 段晓峰 张瑞康 李业弘 刘正 王琦 张霞 任晓敏 《Chinese Optics Letters》 SCIE EI CAS CSCD 2015年第3期32-36,共5页
We fabricate a GaAs-based InGaAs/InGaAsP multiple quantum wells (MQWs) laser at 1.55 pm. Using two-step growth method and thermal cyclic annealing, a thin low-temperature InP layer and a thick InP buffer layer are g... We fabricate a GaAs-based InGaAs/InGaAsP multiple quantum wells (MQWs) laser at 1.55 pm. Using two-step growth method and thermal cyclic annealing, a thin low-temperature InP layer and a thick InP buffer layer are grown on GaAs substrates by low-pressure metal organic chemical vapor deposition technology. Then, high- quality MQWs laser structures are grown on the InP buffer layer. Under quasi-continuous wave (QCW) condition, a threshold current of 476 mA and slope efficiency of 0.15 mW/mA are achieved for a broad area device with 50 μm wide strip and 500 μm long cavity at room-temperature. The peak wavelength of emission spectrum is 1549.5 nm at 700 mA. The device is operating for more than 2000 h at room-temperature and 600 mA. 展开更多
关键词 AS In GA m InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates Metamorphic growth of 1.55
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