Active electronics are usually composed of semiconductor and metal electrodes which are connected by multiple vacuum deposition steps and photolithography patterning.However,the presence of interface of dissimilar mat...Active electronics are usually composed of semiconductor and metal electrodes which are connected by multiple vacuum deposition steps and photolithography patterning.However,the presence of interface of dissimilar material between semiconductor and metal electrode makes various problems in electrical contacts and mechanical failure.The ideal electronics should not have defective interfaces of dissimilar materials.In this study,we developed a novel method to fabricate active electronic components in a monolithic seamless fashion where both metal and semiconductor can be prepared from the same monolith material without creating a semiconductor-metal interface by reversible selective laser-induced redox(rSLIR)method.Furthermore,rSLIR can control the oxidation state of transition metal(Cu)to yield semiconductors with two different bandgap states(Cu_(2)O and CuO with bandgaps of 2.1 and 1.2 eV,respectively),which may allow multifunctional sensors with multiple bandgaps from the same materials.This novel method enables the seamless integration of single-phase Cu,Cu_(2)O,and CuO,simultaneously while allowing reversible,selec-tive conversion between oxidation states by simply shining laser light.Moreover,we fabricated a flexible monolithic metal-semiconduc-tor-metal multispectral photodetector that can detect multiple wavelengths.The unique monolithic characteristics of rSLIR process can provide next-generation electronics fabrication method overcoming the limitation of conventional photolithography methods.展开更多
A simple model for approximate bandgap structure calculation of all-solid photonic bandgap fibre based on an array of rings is proposed. In this model calculated are only the potential modes of a unit cell, which is a...A simple model for approximate bandgap structure calculation of all-solid photonic bandgap fibre based on an array of rings is proposed. In this model calculated are only the potential modes of a unit cell, which is a high-index ring in the low-index background for this fibre, rather than the whole cladding periodic structure based on Bloch＇s theorem to find the bandgap. Its accuracy is proved by comparing its results with the results obtained by using the accurate full-vector plane-wave method. High speed in computation is its great advantage over the other exact methods, because it only needs to find the roots of one-dimensional analytical expressions. And the results of this model, mode plots, offer an ideal environment to explore the basic properties of photonie bandgap clearly.展开更多
基金supported by a National Research Foundation of Korea(NRF)Grant funded through the Basic Science Research Program(2021R1A2B5B03001691,2021M3H4A1A02050237,2016R1A5A1938472)by Creative Materials Discovery Program(NRF-2016M3D1A1900035).M.Cho acknowledges the financial support from the National Research Foundation of Korea(NRF)grant funded by the Korean government(2021R1A4A1033224).
文摘Active electronics are usually composed of semiconductor and metal electrodes which are connected by multiple vacuum deposition steps and photolithography patterning.However,the presence of interface of dissimilar material between semiconductor and metal electrode makes various problems in electrical contacts and mechanical failure.The ideal electronics should not have defective interfaces of dissimilar materials.In this study,we developed a novel method to fabricate active electronic components in a monolithic seamless fashion where both metal and semiconductor can be prepared from the same monolith material without creating a semiconductor-metal interface by reversible selective laser-induced redox(rSLIR)method.Furthermore,rSLIR can control the oxidation state of transition metal(Cu)to yield semiconductors with two different bandgap states(Cu_(2)O and CuO with bandgaps of 2.1 and 1.2 eV,respectively),which may allow multifunctional sensors with multiple bandgaps from the same materials.This novel method enables the seamless integration of single-phase Cu,Cu_(2)O,and CuO,simultaneously while allowing reversible,selec-tive conversion between oxidation states by simply shining laser light.Moreover,we fabricated a flexible monolithic metal-semiconduc-tor-metal multispectral photodetector that can detect multiple wavelengths.The unique monolithic characteristics of rSLIR process can provide next-generation electronics fabrication method overcoming the limitation of conventional photolithography methods.
基金Project supported by the National High Technology Research and Development Program of China (Grant No 2004AA31G200)Beijing Jiaotong University Foundation, China (Grant No 2005SM002)
文摘A simple model for approximate bandgap structure calculation of all-solid photonic bandgap fibre based on an array of rings is proposed. In this model calculated are only the potential modes of a unit cell, which is a high-index ring in the low-index background for this fibre, rather than the whole cladding periodic structure based on Bloch＇s theorem to find the bandgap. Its accuracy is proved by comparing its results with the results obtained by using the accurate full-vector plane-wave method. High speed in computation is its great advantage over the other exact methods, because it only needs to find the roots of one-dimensional analytical expressions. And the results of this model, mode plots, offer an ideal environment to explore the basic properties of photonie bandgap clearly.
