The multi-Fano interference,which is obtained through the simultaneous acquisition of bright and dark states in different phase transitions of Eu3+:BiPO4(7:1,6:1,1:1,and 0.5:1)and Eu3+:NaYF4(1:1/4)crystals,were report...The multi-Fano interference,which is obtained through the simultaneous acquisition of bright and dark states in different phase transitions of Eu3+:BiPO4(7:1,6:1,1:1,and 0.5:1)and Eu3+:NaYF4(1:1/4)crystals,were reported in this work.Multidressed spontaneous four-wave mixing and multidressed fluorescence(multiorder)were adopted to optimize the strong photon–phonon nested dressing effect,which results in more obvious multi-Fano interference.Firstly,the multi-Fano is produced through interference in continuous and multibound states.Secondly,five multi-Fano dips are originated from the nested five dressings(one photon and four phonons)under symmetrical splitting of 7F1 energy level.It is found that the pure H-phase(0.5:1)sample exhibits the strongest photon–phonon dressed effect(five Fano dips).Further,high-order non-Hermitian exceptional points in multi-Fano interference were investigated by adjusting the ratio of Rabi frequency to dephase rate through nested photon and phonon dressing.The experimental results are validated by theoretical simulations,which may be applied to designing optoelectronic devices such as non-Hermitian multi-Fano interferences(multichannel)router.展开更多
基金supported by the National Key Research and Development Program of China(2017YFA0303700,2018YFA0307500)Key Scientific and Technological Innovation Team of Shaanxi Province(2021TD-56)National Natural Science Foundation of China(61975159,11904279,12174302,62022066,12074306,12074303).
文摘The multi-Fano interference,which is obtained through the simultaneous acquisition of bright and dark states in different phase transitions of Eu3+:BiPO4(7:1,6:1,1:1,and 0.5:1)and Eu3+:NaYF4(1:1/4)crystals,were reported in this work.Multidressed spontaneous four-wave mixing and multidressed fluorescence(multiorder)were adopted to optimize the strong photon–phonon nested dressing effect,which results in more obvious multi-Fano interference.Firstly,the multi-Fano is produced through interference in continuous and multibound states.Secondly,five multi-Fano dips are originated from the nested five dressings(one photon and four phonons)under symmetrical splitting of 7F1 energy level.It is found that the pure H-phase(0.5:1)sample exhibits the strongest photon–phonon dressed effect(five Fano dips).Further,high-order non-Hermitian exceptional points in multi-Fano interference were investigated by adjusting the ratio of Rabi frequency to dephase rate through nested photon and phonon dressing.The experimental results are validated by theoretical simulations,which may be applied to designing optoelectronic devices such as non-Hermitian multi-Fano interferences(multichannel)router.
