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Inductance and Capacitance of the Multi Josephson Junction in Superconductor
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作者 H. M. A. R. Maruf M. R. Islam F.-U.-Z. Chowdhury 《Journal of Applied Mathematics and Physics》 2018年第12期2544-2552,共9页
The characteristic behavior of the inductance and capacitance of multi junction ac Josephson effect in superconductor has been presented. Few parameters characterizing the behavior of Josephson junctions are needed to... The characteristic behavior of the inductance and capacitance of multi junction ac Josephson effect in superconductor has been presented. Few parameters characterizing the behavior of Josephson junctions are needed to evaluate for technological applications. In this paper, the inductance and capacitance of the multi Josephson junction connected in parallel are evaluated, using simple classical argument. The numerical results for inductance and capacitance have also been included, indicating few technological applications. 展开更多
关键词 josephson Effects multi josephson junction INDUCTANCE CAPACITANCE
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一种亚微米垂直硅墙的刻蚀方法
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作者 汤玉生 蒋建飞 《Journal of Semiconductors》 EI CAS CSCD 北大核心 1989年第2期158-160,共3页
亚微米垂直硅墙的制备是垂直硅薄膜耦合约瑟夫逊结的关键工艺.本文作者在普通光刻设备基础上,开发了一种在〈100〉硅片上制备亚微米硅墙的刻蚀方法:首先用普通光刻手段刻出较宽的墙区;其次,对非墙区进行迭加注入掺杂;第三,杂质高温横向... 亚微米垂直硅墙的制备是垂直硅薄膜耦合约瑟夫逊结的关键工艺.本文作者在普通光刻设备基础上,开发了一种在〈100〉硅片上制备亚微米硅墙的刻蚀方法:首先用普通光刻手段刻出较宽的墙区;其次,对非墙区进行迭加注入掺杂;第三,杂质高温横向扩散,第四,掺杂选择性刻蚀;第五,高温氧化减薄.实验结果表明,这种方法可以获得墙宽为0.29μm,墙高为1μm左右的硅墙,而且还有一定的改进潜力. 展开更多
关键词 垂直硅墙 亚微米 刻蚀 选择性
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Fabrication and characteristics of intrinsic Josephson junctions in Bi_2Sr_2CaCu_2O_(8+x) single crystals
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作者 YOULxing WANGHuabing 《Chinese Science Bulletin》 SCIE EI CAS 2003年第1期24-27,共4页
Mesa-structured intrinsic Josephson junctionsare fabricated in Bi2Sr2CaCu2O8+x single crystals. Typicalcurrent-voltage characteristics of intrinsic Josephson junc-tions are observed, which include multiple quasi-parti... Mesa-structured intrinsic Josephson junctionsare fabricated in Bi2Sr2CaCu2O8+x single crystals. Typicalcurrent-voltage characteristics of intrinsic Josephson junc-tions are observed, which include multiple quasi-particle branches, surface junction with critical current lower than those of inner junctions, and subgap structures on quasi-particle branches. The corresponding physical explanationsare also given. The energy gap voltage of the intrinsicJosephson junctions at 30 K is about 20 mV. Besides, themeasured Ic-T relationship agrees quite well with thetheoretical computations based on -22-wavexyd supercon-ductor. Our measured dI/dV-V relationship shows theV-shaped gap structure, obviously differing from theU-shaped gap structure of the s-wave superconductor. 展开更多
关键词 本征约瑟夫结 带隙结构 单晶 超导材料 BSCCO 制备 特性
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多层交替沉积后退火处理MgB_2超导薄膜上约瑟夫森结的制备
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作者 邓辉 戴倩 +9 位作者 于海峰 魏彦锋 王福仁 任建坤 崔丽敏 吴玉林 赵士平 陈莺飞 李洁 郑东宁 《科学通报》 CAS CSCD 北大核心 2012年第7期498-505,共8页
在多层交替(SiC/[Mg/B]5)沉积后退火处理的MgB2薄膜上用紫外光刻和Ar离子刻蚀制作出SQUID环路膜条,然后用聚焦离子束(FIB)刻蚀方法在SQUID的环路上制作了150~300nm之间不同尺寸的纳米微桥结构,并测量了其电阻温度(R-T)曲线和电流电压(I... 在多层交替(SiC/[Mg/B]5)沉积后退火处理的MgB2薄膜上用紫外光刻和Ar离子刻蚀制作出SQUID环路膜条,然后用聚焦离子束(FIB)刻蚀方法在SQUID的环路上制作了150~300nm之间不同尺寸的纳米微桥结构,并测量了其电阻温度(R-T)曲线和电流电压(I-V)曲线.膜条的R-T曲线与薄膜基本相同,表明薄膜没有受到膜条制备过程中潮湿的影响.对SQUID的R-T关系测量发现电阻有较大升高,并看到由纳米微桥的存在而具有的结构.SQUID的I-V曲线表明,纳米微桥形成了弱连接,超流主要体现为约瑟夫森耦合电流.其中一个150nm宽纳米微桥的SQUID,其回滞消失的温度约为10K,在此温度下,得到临界电流Ic约为4.5mA,IcRN~2.25mV,单个纳米微桥结的临界电流密度约为1.5×107A/cm2.临界电流Ic随温度以幂指数关系变化,也验证了纳米微桥的弱连接特性.我们的实验对基于MgB2薄膜的约瑟夫森器件制备具有参考价值. 展开更多
关键词 多层交替沉积后 退火 MGB2 薄膜 聚焦离子束刻蚀 约瑟夫森结
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