We propose and investigate a novel metal/SiO_2/Si_3N_4/SiO_2/SiGe charge trapping flash memory structure（named as MONOS）, utilizing Si Ge as the buried channel. The fabricated memory device demonstrates excellent pr...We propose and investigate a novel metal/SiO_2/Si_3N_4/SiO_2/SiGe charge trapping flash memory structure（named as MONOS）, utilizing Si Ge as the buried channel. The fabricated memory device demonstrates excellent programerasable characteristics attributed to the fact that more carriers are generated by the smaller bandgap of Si Ge during program/erase operations. A flat-band voltage shift 2.8 V can be obtained by programming at ＋11 V for 100 us. Meanwhile, the memory device exhibits a large memory window of ~7.17 V under ±12 V sweeping voltage, and a negligible charge loss of 18% after 104 s＇ retention. In addition, the leakage current density is lower than 2.52 × 10^（-7） A·cm^（-2） below a gate breakdown voltage of 12.5 V. Investigation of leakage current-voltage indicates that the Schottky emission is the predominant conduction mechanisms for leakage current. These desirable characteristics are ascribed to the higher trap density of the Si_3N_4 charge trapping layer and the better quality of the interface between the SiO_2 tunneling layer and the Si Ge buried channel. Therefore, the application of the Si Ge buried channel is very promising to construct 3 D charge trapping NAND flash devices with improved operation characteristics.展开更多
The hydrologic and hydraulic changings on the behavior of Mono river are the result of the stress involved by human activities, on one hand and the construction of the dam of Nangbéto and the exploitation of sand...The hydrologic and hydraulic changings on the behavior of Mono river are the result of the stress involved by human activities, on one hand and the construction of the dam of Nangbéto and the exploitation of sand in downstream of the dam by the population, between Athiémé and Agbanankin on other hand. That effect had also affected the shape of the sections of the river in the context of climate variability. It shows consequently that area is also a trapping area of sediments eroded in downstream of the dam and is responsible for the trapping of sediments in the river. The slope and the flow rate are the main factors of the real capacity of transport of a watercourse. They also determine the transport of solid flows from upstream to downstream. This drawing model established by taking into account the bathymetry of a transversal section of the Mono river at Athiémé, is the first step of a global investigation of the solid flow transport in the basin of Mono river and the boundary condition for the characterization of its hydro-sedimentary dynamics study. It aims to take into account sections and the used technique which consist to measure on one located section as the representative section of the river at Athiémé, by moving the boat used for bathymetry.展开更多
基金Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02303007the National Key Research and Development Program of China under Grant No 2016YFA0301701the Youth Innovation Promotion Association of the Chinese Academy of Sciences under Grant No 2016112
文摘We propose and investigate a novel metal/SiO_2/Si_3N_4/SiO_2/SiGe charge trapping flash memory structure（named as MONOS）, utilizing Si Ge as the buried channel. The fabricated memory device demonstrates excellent programerasable characteristics attributed to the fact that more carriers are generated by the smaller bandgap of Si Ge during program/erase operations. A flat-band voltage shift 2.8 V can be obtained by programming at ＋11 V for 100 us. Meanwhile, the memory device exhibits a large memory window of ~7.17 V under ±12 V sweeping voltage, and a negligible charge loss of 18% after 104 s＇ retention. In addition, the leakage current density is lower than 2.52 × 10^（-7） A·cm^（-2） below a gate breakdown voltage of 12.5 V. Investigation of leakage current-voltage indicates that the Schottky emission is the predominant conduction mechanisms for leakage current. These desirable characteristics are ascribed to the higher trap density of the Si_3N_4 charge trapping layer and the better quality of the interface between the SiO_2 tunneling layer and the Si Ge buried channel. Therefore, the application of the Si Ge buried channel is very promising to construct 3 D charge trapping NAND flash devices with improved operation characteristics.
文摘The hydrologic and hydraulic changings on the behavior of Mono river are the result of the stress involved by human activities, on one hand and the construction of the dam of Nangbéto and the exploitation of sand in downstream of the dam by the population, between Athiémé and Agbanankin on other hand. That effect had also affected the shape of the sections of the river in the context of climate variability. It shows consequently that area is also a trapping area of sediments eroded in downstream of the dam and is responsible for the trapping of sediments in the river. The slope and the flow rate are the main factors of the real capacity of transport of a watercourse. They also determine the transport of solid flows from upstream to downstream. This drawing model established by taking into account the bathymetry of a transversal section of the Mono river at Athiémé, is the first step of a global investigation of the solid flow transport in the basin of Mono river and the boundary condition for the characterization of its hydro-sedimentary dynamics study. It aims to take into account sections and the used technique which consist to measure on one located section as the representative section of the river at Athiémé, by moving the boat used for bathymetry.
