Lateral two-dimensional(2D) heterostructures have opened up unprecedented opportunities in modern electronic device and material science. In this work, electronic properties of size-dependent MoTe2/WTe2 lateral hetero...Lateral two-dimensional(2D) heterostructures have opened up unprecedented opportunities in modern electronic device and material science. In this work, electronic properties of size-dependent MoTe2/WTe2 lateral heterostructures(LHSs)are investigated through the first-principles density functional calculations. The constructed periodic multi-interfaces patterns can also be defined as superlattice structures. Consequently, the direct band gap character remains in all considered LHSs without any external modulation, while the gap size changes within little difference range with the building blocks increasing due to the perfect lattice matching. The location of the conduction band minimum(CBM) and the valence band maximum(VBM) will change from P-point to Γ-point when m plus n is a multiple of 3 for A-mn LHSs as a result of Brillouin zone folding. The bandgap located at high symmetry Γ-point is favourable to electron transition, which might be useful to optoelectronic device and could be achieved by band engineering. Type-II band alignment occurs in the MoTe2/WTe2 LHSs, for electrons and holes are separated on the opposite domains, which would reduce the recombination rate of the charge carriers and facilitate the quantum efficiency. Moreover, external biaxial strain leads to efficient bandgap engineering. MoTe2/WTe2 LHSs could serve as potential candidate materials for next-generation electronic devices.展开更多
Non-stoiehiometry effect on the extreme magnetoresistanee is systematically investigated for the Weyl semimetal WTe2. Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight differen...Non-stoiehiometry effect on the extreme magnetoresistanee is systematically investigated for the Weyl semimetal WTe2. Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight difference in Te vacancies and the annealed samples with increased Te vacancies. The fits to a two-band model show that the magnetoresistanee is strongly dependent on the residual resistivity ratio （i.e., the degree of non-stoichiometry）, which is eventually understood in terms of electron doping that not only breaks the balance between electron-type and hole-type carrier densities, but also reduces the average carrier mobility. Thus the compensation effect and ultrahigh mobility are probably the main driving force of the extreme magnetoresistance in WTe2.展开更多
WTe2 has attracted a great deal of attention because it exhibits extremely large and non-saturating magnetore- sistance. The underlying origin of such a giant magnetoresistance is still under debate. Utilizing laser-b...WTe2 has attracted a great deal of attention because it exhibits extremely large and non-saturating magnetore- sistance. The underlying origin of such a giant magnetoresistance is still under debate. Utilizing laser-based angle-resolved photoemission spectroscopy with high energy and momentum resolutions, we reveal the complete electronic structure of WTe2. This makes it possible to determine accurately the electron and hole concentrations and their temperature dependence. We find that, with increasing the temperature, the overall electron concen- tration increases while the total hole concentration decreases. It indicates that the electron-hole compensation, if it exists, can only occur in a narrow temperature range,and in most of the temperature range there is an electron-hole imbalance. Our results are not consistent with the perfect electron-hole compensation picture that is commonly considered to be the cause of the unusual magnetoresistance in WTe2. We identify a fiat band near the Brillouin zone center that is close to the Fermi level and exhibits a pronounced temperature dependence. Such a fiat band can play an important role in dictating the transport properties of WTe2. Our results provide new insight on understanding the origin of the unusual magnetoresistance in WTe2.展开更多
The QSH edge channels can be used to connect dissipationless nanoelectronic devices, when the topological edge states and the bulk states have the perfectly spaced. But the monolayer 1T’-WTe<sub>2</sub> b...The QSH edge channels can be used to connect dissipationless nanoelectronic devices, when the topological edge states and the bulk states have the perfectly spaced. But the monolayer 1T’-WTe<sub>2</sub> bulk state is metallic nature, with edge channel lengths around 100 nm, which hinders its further study. By simulating the different terminational edge states, using the GGA-1/2 method to calculate, we found a stable terminational edge state. And under strain engineering, fixed the a-axis, the band gap gradually increases with the b-axis tensile. When the tensile to 2.9%, the band gap increases to 245 meV. It greatly improves the application of 1T’-WTe<sub>2</sub>. During the phase transition of the material from half-metal to insulator, the topology of edge states remains unchanged, showing strong robustness. Thus introducing strain can make 1T’-WTe<sub>2</sub> a suitable material for fundamental research or topological electronic devices.展开更多
<p style="margin-left:10.0pt;"> <span style="font-family:Verdana;">The combustion of MSW contains several species which if liberated into the flue gas w<span style="font-family:...<p style="margin-left:10.0pt;"> <span style="font-family:Verdana;">The combustion of MSW contains several species which if liberated into the flue gas w<span style="font-family:Verdana;">ill<span style="font-family:""><span style="font-family:Verdana;"> participate in erosion-corrosion reactions with the alloy surface and with the oxide layers. Actually with the evolution of material science <span style="font-family:Verdana;">and the discovery of 2D material<span style="font-family:Verdana;">s<span style="font-family:Verdana;">, we can handle that situation as well as <span style="font-family:Verdana;">possible. The graphene as 2D material present<span style="font-family:Verdana;">s<span style="font-family:""><span style="font-family:Verdana;"> a lot of advantage due to it physical properties such: melting point, boiling point and thermal conductivity, which <span style="font-family:Verdana;">can help to manage the problem of low and middle temperature (100<span style="white-space:nowrap;">°C -<span style="font-family:Verdana;"> 300<span style="white-space:nowrap;">°C) erosion-corrosion into the boiler wall of waste to energy. The aim of the study was focused on analyz<span style="font-family:Verdana;">ing<span style="font-family:""><span style="font-family:Verdana;"> the resistance at low and middle temperature (100<span style="white-space:nowrap;">°C - 300<span style="white-space:nowrap;">°C) in the enclosed environment and the corrosion-erosion <span style="font-family:Verdana;">resistance abilities of the graphene sheet as the 2D protective coating materi<span style="font-family:Verdana;">al. This paper analyzed the possibility of using the graphene in the aggressive environment which is waste to energy boiler. The results obtained from this study after simulation using ANSYS software which is one of the best <span style="font-family:Verdana;">software for simulations showed that Graphene protects the furnace walls<span style="font-family:Verdana;"> against corrosion-erosion for temperatures lower than 400<span style="white-space:nowrap;">°C and that in the presence of certain impurities such as: sodium (Na), sulfur (S), chloride (Cl) and Phos<span style="font-family:Verdana;">- <span style="font-family:""><span style="font-family:Verdana;">phorous (P), Sodium Chloride (NaCl), Hydrogen Chloride (HCl), Dioxide of Carbone (CO<sub><span style="font-family:Verdana;">2</sub><span style="font-family:Verdana;">) and Dioxide of Sulfur (SO<sub><span style="font-family:Verdana;">2</sub><span style="font-family:Verdana;">). <span "=""><sub></sub><sub></sub>展开更多
The efficient near-infrared light detection of the MoTe2/germanium(Ge)heterojunction has been demonstrated.The fabricated MoTe2/Ge van der Waals heterojunction shows excellent photoresponse performances under the illu...The efficient near-infrared light detection of the MoTe2/germanium(Ge)heterojunction has been demonstrated.The fabricated MoTe2/Ge van der Waals heterojunction shows excellent photoresponse performances under the illumination of a 915 nm laser.The photoresponsivity and specific detectivity can reach to 12,460 A/W and 3.3×10^12 Jones,respectively.And the photoresponse time is 5 ms.However,the MoTe2/Ge heterojunction suffers from a large reverse current at dark due to the low barrier between MoTe2 and Ge.Therefore,to reduce the reverse current,an ultrathin GeO2 layer deposited by ozone oxidation has been introduced to the MoTe2/Ge heterojunction.The reverse current of the MoTe2/GeO2/Ge heterojunction at dark was suppressed from 0.44µA/µm^2 to 0.03 nA/µm^2,being reduced by more than four orders of magnitude.The MoTe2/Ge heterojunction with the GeO2 layer also exhibits good photoresponse performances,with a high responsivity of 15.6 A/W,short response time of 5 ms,and good specific detectivity of 4.86×10^11 Jones.These properties suggest that MoTe2/Ge heterostructure is one of the promising structures for the development of high performance near-infrared photodetectors.展开更多
Molybdenum ditelluride （MoTe2） has been demonstrated great potential in electronic and optoelectronic applications. However, the reported effective hole mobility remains far below its theoretical value. Herein, taki...Molybdenum ditelluride （MoTe2） has been demonstrated great potential in electronic and optoelectronic applications. However, the reported effective hole mobility remains far below its theoretical value. Herein, taking advantage of high-κ screening effect, we have fabricated back-gated MoTe2 transistors on an Al2O3 high-κ dielectric and systematically investigated the electronic and optoelectronic proper- ties. A high current on/off ratio exceeding 106 is achieved in the Al2O3-based MoTe2 transistors, and the hole mobility is demonstrated to be 150 cm2 V^-1 s^-1, compared to 0.2-20 cm^2 V^-1 s^-1 ever obtained from back-gated MoTe2 transistors in the literatures. Moreover, a considerable hole concentration of 1.2 × 10^13 cm 2 is attained in our Al2O3-based MoTe2 transistors owing to the strong gate control capa- bility, leading to a high on-state hole current of 6.1 μA μm^-1. After optimization, our Al2O3-based MoTe2 phototransistor exhibits outstanding photodetective performance, with a high responsivity of 543 AW^-1 and a high photogain of 1,662 at 405 nm light illumination, which are boosted around 419 times compared to the referential SiO2-based control devices. The mechanisms of photoconductivity in the Al2O3-based MoTe2 phototransistors have been analyzed in detail, and the photogating effect is considered to play an important role. This work may provide useful insight to improve carrier mobility in two-dimensional layered semiconductors and open opportunities to facilitate the development of high-performance photodetectors in the future.展开更多
Infrared(IR)light photodetection based on two dimensional(2D)materials of proper bandgap has attracted increasing attention.However,the weak IR absorption in 2D materials,due to their ultrathin attribute and indirect ...Infrared(IR)light photodetection based on two dimensional(2D)materials of proper bandgap has attracted increasing attention.However,the weak IR absorption in 2D materials,due to their ultrathin attribute and indirect bandgap in multilayer structures,degrades their performance when used as IR photodetectors.In this work,we utilize the fact that few-layer MoTe2 flake has a near-IR(NIR)bandgap and demonstrate a^60-fold enhancement of NIR response by introducing a gold hollow nanorods on the surface.Such gold hollow nanorods have distinct absorption peak located also at the NIR regime,therefore induces strong resonance,benefitting NIR absorption in MoTe2,resulting in strong near-field enhancement.With the evidence from steady and transient state optical spectra,we confirm that the enhancement of NIR response originates only photon absorption,rather than electron transport at interfaces as observed in other heterostructures,therefore,precluding the requirement of high-quality interfaces for commercial applications.展开更多
Doping can improve the band alignment at the metal-semiconductor interface to modify the corresponding Schottky barrier,which is crucial for the realization of high-performance logic components.Here,we systematically ...Doping can improve the band alignment at the metal-semiconductor interface to modify the corresponding Schottky barrier,which is crucial for the realization of high-performance logic components.Here,we systematically investigated a convenient and effective method,ultraviolet ozone treatment,for p-type doping of MoTe2 field-effect transistors to enormously enhance the corresponding electrical performance.The resulted hole concentration and mobility are near 100 times enhanced to be〜1.0×10^13 cm^-2 and 101.4 cm^2/(V·s),respectively,and the conductivity is improved by 5 orders of magnitude.These values are comparable to the highest ones ever obtained via annealing doping or non-lithographic fabrication methods at room temperature.Compared with the pristine one,the photoresponsivity(522 mA/W)is enhanced approximately 100 times.Such excellent performances can be attributed to the sharply reduced Schottky barrier because of the surface charge transfer from MoTe2 to MoOx(x<3),as proved by photoemission spectroscopy.Additionally,the p-doped devices exhibit excellent stability in ambient air.Our findings show significant potential in future nanoelectronic and optoelectronic applications.展开更多
We have investigated the electronic properties of WTe2 armchair nanoribbons with defects. WTe2 nanoribbons can be categorized depending on the edge structure in two types： armchair and zigzag. WTe2 in its bulk form h...We have investigated the electronic properties of WTe2 armchair nanoribbons with defects. WTe2 nanoribbons can be categorized depending on the edge structure in two types： armchair and zigzag. WTe2 in its bulk form has an indirect band gap but nanoribbons and nanosheets of WTe2 have direct band gaps. Interestingly, the zigzag nanoribbon is metallic while the armchair nanoribbons are semiconducting. Thus they can find applications in device fabrication. Therefore, it is very important to study the effect of defects on the electronic properties of the armchair nanoribbons as these defects can impair the device properties and characteristics. We have considered defects such as： vacancy, rough edge, wrap, ripple and twist in this work. We report the band gap variation with these defects. We have also studied the change in band gap and total energy with varying degrees of wrap, ripple and twist.展开更多
采用磁控溅射沉积的WTe_(2)作为可饱和吸收体,在掺铒光纤激光器中实现了超快脉冲的产生。在1559.31 nm波长处,实验测得的3 d B光谱带宽为11.54 nm,脉冲宽度为231 fs。在26.6 MHz基频处获得了最大平均输出功率为58 m W、脉冲能量为2.18 ...采用磁控溅射沉积的WTe_(2)作为可饱和吸收体,在掺铒光纤激光器中实现了超快脉冲的产生。在1559.31 nm波长处,实验测得的3 d B光谱带宽为11.54 nm,脉冲宽度为231 fs。在26.6 MHz基频处获得了最大平均输出功率为58 m W、脉冲能量为2.18 n J的超短脉冲。研究结果表明,WTe_(2)可饱和吸收体可作为一种性能优异的光子器件,在1.5μm波段实现超短脉冲的产生。展开更多
Molybdenum ditelluride （MoTe2）, which is an important transition-metal dichalcogenide, has attracted considerable interest owing to its unique properties, such as its small bandgap and large Seebeck coefficient. How...Molybdenum ditelluride （MoTe2）, which is an important transition-metal dichalcogenide, has attracted considerable interest owing to its unique properties, such as its small bandgap and large Seebeck coefficient. However, the batch production of monolayer MoTe2 has been rarely reported. In this study, we demonstrate the synthesis of large-domain （edge length exceeding 30 μm）, monolayer MoTe2 from chemical vapor deposition-grown monolayer MoS2 using a chalcogen atom-exchange synthesis route. An in-depth investigation of the tellurization process reveals that the substitution of S atoms by Te is prevalently initiated at the edges and grain boundaries of the monolayer MoS2, which differs from the homogeneous selenization of MoS2 flakes with the formation of alloyed Mo-S-Se hybrids. Moreover, we detect a large compressive strain （approximately -10%） in the transformed MoTe2 lattice, which possibly drives the phase transition from 2H to 1T＇ at the reaction temperature of 500 ℃. This phase change is substantiated by experimental facts and first-principles calculations. This work introduces a novel route for the templated synthesis of two-dimensional layered materials through atom substitutional chemistry and provides a new pathway for engineering the strain and thus the intriguing physics and chemistry.展开更多
The potential of bulk-like WTe2 particles for the realization of a passive Q-switch operating at the 1 μm wavelength was investigated. The WTe2 particles were prepared using a simple mechanical exfoliation method tog...The potential of bulk-like WTe2 particles for the realization of a passive Q-switch operating at the 1 μm wavelength was investigated. The WTe2 particles were prepared using a simple mechanical exfoliation method together with Scotch tape. By attaching bulk-like WTe2 particles, which remained on the top of the sticky surface of a small segment of the Scotch tape, to the flat side of a side-polished fiber, a saturable absorber（SA） was readily implemented. A strong saturable absorption was then readily obtained through an evanescent field interaction with the WTe2 particles. The modulation depth of the prepared SA was measured as ~2.18% at 1.03 μm. By incorporating the proposed SA into an all-fiberized ytterbium-doped fiber ring cavity, stable Qswitched pulses were readily achieved.展开更多
Two-dimensional (2D) heterostructures have shown great potential in advanced photovoltaics due to their restrained carrier recombination, prolonged exciton lifetime and improved light absorption. Herein, a 2D polarize...Two-dimensional (2D) heterostructures have shown great potential in advanced photovoltaics due to their restrained carrier recombination, prolonged exciton lifetime and improved light absorption. Herein, a 2D polarized heterostructure is constructed between Janus MoSSe and MoTe_(2) monolayers and is systematically investigated via first-principles calculations. Electronically, the valence band and conduction band of the MoSSe−MoTe_(2) (MoSeS−MoTe_(2)) are contributed by MoTe_(2) and MoSSe layers, respectively, and its bandgap is 0.71 (0.03) eV. A built-in electric field pointing from MoTe_(2) to MoSSe layers appears at the interface of heterostructures due to the interlayer carrier redistribution. Notably, the band alignment and built-in electric field make it a direct z-scheme heterostructure, benefiting the separation of photogenerated electron-hole pairs. Besides, the electronic structure and interlayer carrier reconstruction can be readily controlled by reversing the electric polarization of the MoSSe layer. Furthermore, the light absorption of the MoSSe/MoTe_(2) heterostructure is also improved in comparison with the separated monolayers. Consequently, in this work, a new z-scheme polarized heterostructure with polarization-controllable optoelectronic properties is designed for highly efficient optoelectronics.展开更多
Flash memories and semiconductor p-n junctions are two elementary but incompatible building blocks of most electronic and optoelectronic devices.The pressing demand to efficiently transfer massive data between memorie...Flash memories and semiconductor p-n junctions are two elementary but incompatible building blocks of most electronic and optoelectronic devices.The pressing demand to efficiently transfer massive data between memories and logic circuits,as well as for high data storage capability and device integration density,has fueled the rapid growth of technique and material innovations.Two-dimensional(2D)materials are considered as one of the most promising candidates to solve this challenge.However,a key aspect for 2D materials to build functional devices requires effective and accurate control of the carrier polarity,concentration and spatial distribution in the atomically thin structures.Here,a non-volatile opto-electrical doping approach is demonstrated,which enables reversibly writing spatially resolved doping patterns in the MoTe2 conductance channel through a MoTe2/hexagonal boron nitride(h-BN)heterostructure.Based on the doping effect induced by the combination of electrostatic modulation and ultraviolet light illumination,a 3-bit flash memory and various homojunctions on the same MoTe2/BN heterostructure are successfully developed.The flash memory achieved 8 well distinguished memory states with a maximum on/off ratio over 10^4.Each state showed negligible decay during the retention time of 2,400 s.The heterostructure also allowed the formation of p-p,n-n,p-n,and n-p homojunctions and the free transition among these states.The MoTe2 p-n homojunction with a rectification ratio of 10^3 exhibited excellent photodetection and photovoltaic performance.Having the memory device and p-n junction built on the same structure makes it possible to bring memory and computational circuit on the same chip,one step further to realize near-memory computing.展开更多
Our scanning tunneling microscopy (STM) study observes, for the first time, twin domain boundary (TDB) formations on the surface of WTe2 single crystal, which is glued by solidifying indium to Si substrate. In these T...Our scanning tunneling microscopy (STM) study observes, for the first time, twin domain boundary (TDB) formations on the surface of WTe2 single crystal, which is glued by solidifying indium to Si substrate. In these TDB regions, a large inhomogeneous strain field, especially a critical shear strain of about 7%, is observed by geometric phase analysis. This observation does not obey the old believe that a small mechanical stress is sufficient to drive thermally-induced TDB formations in two-dimensional materials. To resolve the contradiction, we perform density functional theory calculations combined with elasticity theory analysis, which show that TDBs on WTe2 are entirely displacement-induced, for which a critical strain is necessary to overcome the onset barrier.展开更多
Unsaturated magnetoresistance （MR） has been reported in type-II Weyl semimetal WTe2, manifested as a perfect compensation of opposite carriers. We report linear MR （LMR） in WTe2 crystals, the onset of which was id...Unsaturated magnetoresistance （MR） has been reported in type-II Weyl semimetal WTe2, manifested as a perfect compensation of opposite carriers. We report linear MR （LMR） in WTe2 crystals, the onset of which was identified by constructing the MR mobility spectra for weak fields. The LMR further increased and became dominant for fields stronger than 20 T, while the parabolic MR gradually decayed. The LMR was also observed in high-pressure conditions.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61674053 and 11881240254)the Natural Science Foundation of Henan Province,China(Grant No.162300410325)+1 种基金the Key Young Teachers of Henan Province,China(Grant No.2017GGJS179)the Program for Science&Technology Innovation Talents in Universities of Henan Province,China(Grant No.18HASTIT030)
文摘Lateral two-dimensional(2D) heterostructures have opened up unprecedented opportunities in modern electronic device and material science. In this work, electronic properties of size-dependent MoTe2/WTe2 lateral heterostructures(LHSs)are investigated through the first-principles density functional calculations. The constructed periodic multi-interfaces patterns can also be defined as superlattice structures. Consequently, the direct band gap character remains in all considered LHSs without any external modulation, while the gap size changes within little difference range with the building blocks increasing due to the perfect lattice matching. The location of the conduction band minimum(CBM) and the valence band maximum(VBM) will change from P-point to Γ-point when m plus n is a multiple of 3 for A-mn LHSs as a result of Brillouin zone folding. The bandgap located at high symmetry Γ-point is favourable to electron transition, which might be useful to optoelectronic device and could be achieved by band engineering. Type-II band alignment occurs in the MoTe2/WTe2 LHSs, for electrons and holes are separated on the opposite domains, which would reduce the recombination rate of the charge carriers and facilitate the quantum efficiency. Moreover, external biaxial strain leads to efficient bandgap engineering. MoTe2/WTe2 LHSs could serve as potential candidate materials for next-generation electronic devices.
基金Supported by the National Key R&D Program of China under Grant Nos 2016YFA0300404 and 2017YFA0403600the National Natural Science Foundation of China under Grant Nos 51603207,U1532267,11574288 and 11674327the Natural Science Foundation of Anhui Province under Grant No 1708085MA08
文摘Non-stoiehiometry effect on the extreme magnetoresistanee is systematically investigated for the Weyl semimetal WTe2. Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight difference in Te vacancies and the annealed samples with increased Te vacancies. The fits to a two-band model show that the magnetoresistanee is strongly dependent on the residual resistivity ratio （i.e., the degree of non-stoichiometry）, which is eventually understood in terms of electron doping that not only breaks the balance between electron-type and hole-type carrier densities, but also reduces the average carrier mobility. Thus the compensation effect and ultrahigh mobility are probably the main driving force of the extreme magnetoresistance in WTe2.
基金Supported by the National Natural Science Foundation of China under Grant No 11574367the National Basic Research Program of China under Grant Nos 2013CB921904 and 2015CB921300+2 种基金the National Key Research and Development Program of China under Grant No 2016YFA0300600the Strategic Priority Research Program(B)of the Chinese Academy of Sciences under Grant No XDB07020300the US Department of Energy under Grant No DE-SC0014208
文摘WTe2 has attracted a great deal of attention because it exhibits extremely large and non-saturating magnetore- sistance. The underlying origin of such a giant magnetoresistance is still under debate. Utilizing laser-based angle-resolved photoemission spectroscopy with high energy and momentum resolutions, we reveal the complete electronic structure of WTe2. This makes it possible to determine accurately the electron and hole concentrations and their temperature dependence. We find that, with increasing the temperature, the overall electron concen- tration increases while the total hole concentration decreases. It indicates that the electron-hole compensation, if it exists, can only occur in a narrow temperature range,and in most of the temperature range there is an electron-hole imbalance. Our results are not consistent with the perfect electron-hole compensation picture that is commonly considered to be the cause of the unusual magnetoresistance in WTe2. We identify a fiat band near the Brillouin zone center that is close to the Fermi level and exhibits a pronounced temperature dependence. Such a fiat band can play an important role in dictating the transport properties of WTe2. Our results provide new insight on understanding the origin of the unusual magnetoresistance in WTe2.
文摘The QSH edge channels can be used to connect dissipationless nanoelectronic devices, when the topological edge states and the bulk states have the perfectly spaced. But the monolayer 1T’-WTe<sub>2</sub> bulk state is metallic nature, with edge channel lengths around 100 nm, which hinders its further study. By simulating the different terminational edge states, using the GGA-1/2 method to calculate, we found a stable terminational edge state. And under strain engineering, fixed the a-axis, the band gap gradually increases with the b-axis tensile. When the tensile to 2.9%, the band gap increases to 245 meV. It greatly improves the application of 1T’-WTe<sub>2</sub>. During the phase transition of the material from half-metal to insulator, the topology of edge states remains unchanged, showing strong robustness. Thus introducing strain can make 1T’-WTe<sub>2</sub> a suitable material for fundamental research or topological electronic devices.
文摘<p style="margin-left:10.0pt;"> <span style="font-family:Verdana;">The combustion of MSW contains several species which if liberated into the flue gas w<span style="font-family:Verdana;">ill<span style="font-family:""><span style="font-family:Verdana;"> participate in erosion-corrosion reactions with the alloy surface and with the oxide layers. Actually with the evolution of material science <span style="font-family:Verdana;">and the discovery of 2D material<span style="font-family:Verdana;">s<span style="font-family:Verdana;">, we can handle that situation as well as <span style="font-family:Verdana;">possible. The graphene as 2D material present<span style="font-family:Verdana;">s<span style="font-family:""><span style="font-family:Verdana;"> a lot of advantage due to it physical properties such: melting point, boiling point and thermal conductivity, which <span style="font-family:Verdana;">can help to manage the problem of low and middle temperature (100<span style="white-space:nowrap;">°C -<span style="font-family:Verdana;"> 300<span style="white-space:nowrap;">°C) erosion-corrosion into the boiler wall of waste to energy. The aim of the study was focused on analyz<span style="font-family:Verdana;">ing<span style="font-family:""><span style="font-family:Verdana;"> the resistance at low and middle temperature (100<span style="white-space:nowrap;">°C - 300<span style="white-space:nowrap;">°C) in the enclosed environment and the corrosion-erosion <span style="font-family:Verdana;">resistance abilities of the graphene sheet as the 2D protective coating materi<span style="font-family:Verdana;">al. This paper analyzed the possibility of using the graphene in the aggressive environment which is waste to energy boiler. The results obtained from this study after simulation using ANSYS software which is one of the best <span style="font-family:Verdana;">software for simulations showed that Graphene protects the furnace walls<span style="font-family:Verdana;"> against corrosion-erosion for temperatures lower than 400<span style="white-space:nowrap;">°C and that in the presence of certain impurities such as: sodium (Na), sulfur (S), chloride (Cl) and Phos<span style="font-family:Verdana;">- <span style="font-family:""><span style="font-family:Verdana;">phorous (P), Sodium Chloride (NaCl), Hydrogen Chloride (HCl), Dioxide of Carbone (CO<sub><span style="font-family:Verdana;">2</sub><span style="font-family:Verdana;">) and Dioxide of Sulfur (SO<sub><span style="font-family:Verdana;">2</sub><span style="font-family:Verdana;">). <span "=""><sub></sub><sub></sub>
基金supported by the National Key Research and Development Program of China(Nos.2016YFA0200400 and 2016YFA0302300)the National Science and Technology Major Project of China(No.2016ZX02301001).
文摘The efficient near-infrared light detection of the MoTe2/germanium(Ge)heterojunction has been demonstrated.The fabricated MoTe2/Ge van der Waals heterojunction shows excellent photoresponse performances under the illumination of a 915 nm laser.The photoresponsivity and specific detectivity can reach to 12,460 A/W and 3.3×10^12 Jones,respectively.And the photoresponse time is 5 ms.However,the MoTe2/Ge heterojunction suffers from a large reverse current at dark due to the low barrier between MoTe2 and Ge.Therefore,to reduce the reverse current,an ultrathin GeO2 layer deposited by ozone oxidation has been introduced to the MoTe2/Ge heterojunction.The reverse current of the MoTe2/GeO2/Ge heterojunction at dark was suppressed from 0.44µA/µm^2 to 0.03 nA/µm^2,being reduced by more than four orders of magnitude.The MoTe2/Ge heterojunction with the GeO2 layer also exhibits good photoresponse performances,with a high responsivity of 15.6 A/W,short response time of 5 ms,and good specific detectivity of 4.86×10^11 Jones.These properties suggest that MoTe2/Ge heterostructure is one of the promising structures for the development of high performance near-infrared photodetectors.
基金supported by the National Key Research and Development Program of China(2016YFA0302300,016YFA0200400)the National Science and Technology Major Project of China(2016ZX02301001)+1 种基金the National Natural Science Foundation of China(61306105)the Tsinghua University Initiative Scientific Research Program
文摘Molybdenum ditelluride （MoTe2） has been demonstrated great potential in electronic and optoelectronic applications. However, the reported effective hole mobility remains far below its theoretical value. Herein, taking advantage of high-κ screening effect, we have fabricated back-gated MoTe2 transistors on an Al2O3 high-κ dielectric and systematically investigated the electronic and optoelectronic proper- ties. A high current on/off ratio exceeding 106 is achieved in the Al2O3-based MoTe2 transistors, and the hole mobility is demonstrated to be 150 cm2 V^-1 s^-1, compared to 0.2-20 cm^2 V^-1 s^-1 ever obtained from back-gated MoTe2 transistors in the literatures. Moreover, a considerable hole concentration of 1.2 × 10^13 cm 2 is attained in our Al2O3-based MoTe2 transistors owing to the strong gate control capa- bility, leading to a high on-state hole current of 6.1 μA μm^-1. After optimization, our Al2O3-based MoTe2 phototransistor exhibits outstanding photodetective performance, with a high responsivity of 543 AW^-1 and a high photogain of 1,662 at 405 nm light illumination, which are boosted around 419 times compared to the referential SiO2-based control devices. The mechanisms of photoconductivity in the Al2O3-based MoTe2 phototransistors have been analyzed in detail, and the photogating effect is considered to play an important role. This work may provide useful insight to improve carrier mobility in two-dimensional layered semiconductors and open opportunities to facilitate the development of high-performance photodetectors in the future.
基金This project was supported by the Research Grant Council of Hong Kong SAR(No.1620441)NSFC-RGC Joint Research Scheme(No.N_HKUST607/17)+4 种基金the Innovation and Technology Commission(No.ITC-CNERC14SC01)the Zhongshan Municipal Bureau of Science&Technology(No.ZSST19EG03)National Natural Science Foundation of China(NSFC)(Nos.11825203,51872100,21825103,21501060 and 51727809)National Basic Research Program of China(Nos.2015CB932600 and 2019kfyRCPY059)Foundation of Shenzhen Science and Technology Innovation Committee(No.JCYJ20180504170444967).
文摘Infrared(IR)light photodetection based on two dimensional(2D)materials of proper bandgap has attracted increasing attention.However,the weak IR absorption in 2D materials,due to their ultrathin attribute and indirect bandgap in multilayer structures,degrades their performance when used as IR photodetectors.In this work,we utilize the fact that few-layer MoTe2 flake has a near-IR(NIR)bandgap and demonstrate a^60-fold enhancement of NIR response by introducing a gold hollow nanorods on the surface.Such gold hollow nanorods have distinct absorption peak located also at the NIR regime,therefore induces strong resonance,benefitting NIR absorption in MoTe2,resulting in strong near-field enhancement.With the evidence from steady and transient state optical spectra,we confirm that the enhancement of NIR response originates only photon absorption,rather than electron transport at interfaces as observed in other heterostructures,therefore,precluding the requirement of high-quality interfaces for commercial applications.
基金We acknowledge the financial support from the National Natural Science Foundation of China(Nos.11874427,11874423).Dr.H an H uang acknowledges support from the Innovation-Driven project of Central South University(No.2017CX018)and from the Natural Science Foundation of H unan province(No.2016JJ1021).Mr.Xiaoming Zheng acknowledges the support from the Fundamental Research Funds for the Central Universities of Central South University(No.2017zzts066).
文摘Doping can improve the band alignment at the metal-semiconductor interface to modify the corresponding Schottky barrier,which is crucial for the realization of high-performance logic components.Here,we systematically investigated a convenient and effective method,ultraviolet ozone treatment,for p-type doping of MoTe2 field-effect transistors to enormously enhance the corresponding electrical performance.The resulted hole concentration and mobility are near 100 times enhanced to be〜1.0×10^13 cm^-2 and 101.4 cm^2/(V·s),respectively,and the conductivity is improved by 5 orders of magnitude.These values are comparable to the highest ones ever obtained via annealing doping or non-lithographic fabrication methods at room temperature.Compared with the pristine one,the photoresponsivity(522 mA/W)is enhanced approximately 100 times.Such excellent performances can be attributed to the sharply reduced Schottky barrier because of the surface charge transfer from MoTe2 to MoOx(x<3),as proved by photoemission spectroscopy.Additionally,the p-doped devices exhibit excellent stability in ambient air.Our findings show significant potential in future nanoelectronic and optoelectronic applications.
基金the Department of Science and Technology of the government of India for partially funding this work
文摘We have investigated the electronic properties of WTe2 armchair nanoribbons with defects. WTe2 nanoribbons can be categorized depending on the edge structure in two types： armchair and zigzag. WTe2 in its bulk form has an indirect band gap but nanoribbons and nanosheets of WTe2 have direct band gaps. Interestingly, the zigzag nanoribbon is metallic while the armchair nanoribbons are semiconducting. Thus they can find applications in device fabrication. Therefore, it is very important to study the effect of defects on the electronic properties of the armchair nanoribbons as these defects can impair the device properties and characteristics. We have considered defects such as： vacancy, rough edge, wrap, ripple and twist in this work. We report the band gap variation with these defects. We have also studied the change in band gap and total energy with varying degrees of wrap, ripple and twist.
文摘采用磁控溅射沉积的WTe_(2)作为可饱和吸收体,在掺铒光纤激光器中实现了超快脉冲的产生。在1559.31 nm波长处,实验测得的3 d B光谱带宽为11.54 nm,脉冲宽度为231 fs。在26.6 MHz基频处获得了最大平均输出功率为58 m W、脉冲能量为2.18 n J的超短脉冲。研究结果表明,WTe_(2)可饱和吸收体可作为一种性能优异的光子器件,在1.5μm波段实现超短脉冲的产生。
基金We acknowledge finandal support by National Natural Science Foundation of China （Nos. 51472008, 51290272, 51471004, and 51672307）, the National High-tech R＆D Program of China （No. 2016YFA0200103）, the National Basic Research Program of China （No. 2014CB921002）, the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics （No. KF201601）, the Strategic Priority Research Program of Chinese Academy of Sciences （No. XDB07030200） and the Key Research Program of Frontier Sciences, CAS （No. QYZDB-SSW-JSC035）.
文摘Molybdenum ditelluride （MoTe2）, which is an important transition-metal dichalcogenide, has attracted considerable interest owing to its unique properties, such as its small bandgap and large Seebeck coefficient. However, the batch production of monolayer MoTe2 has been rarely reported. In this study, we demonstrate the synthesis of large-domain （edge length exceeding 30 μm）, monolayer MoTe2 from chemical vapor deposition-grown monolayer MoS2 using a chalcogen atom-exchange synthesis route. An in-depth investigation of the tellurization process reveals that the substitution of S atoms by Te is prevalently initiated at the edges and grain boundaries of the monolayer MoS2, which differs from the homogeneous selenization of MoS2 flakes with the formation of alloyed Mo-S-Se hybrids. Moreover, we detect a large compressive strain （approximately -10%） in the transformed MoTe2 lattice, which possibly drives the phase transition from 2H to 1T＇ at the reaction temperature of 500 ℃. This phase change is substantiated by experimental facts and first-principles calculations. This work introduces a novel route for the templated synthesis of two-dimensional layered materials through atom substitutional chemistry and provides a new pathway for engineering the strain and thus the intriguing physics and chemistry.
基金supported by the National Research Foundation of Korea funded by the Korean Government(MSIT),South Korea(Grant Nos.NRF-2015R1A2A2A11000907 and NRF-2015R1A2A2A04006979)Ministry of Science and ICT(MSIT),Korea,under the Information Technology Research Center(ITRC)support program(IITP-2017-2015-0-00385),supervised by the Institute for Information and Communications Technology Promotion(IITP)
文摘The potential of bulk-like WTe2 particles for the realization of a passive Q-switch operating at the 1 μm wavelength was investigated. The WTe2 particles were prepared using a simple mechanical exfoliation method together with Scotch tape. By attaching bulk-like WTe2 particles, which remained on the top of the sticky surface of a small segment of the Scotch tape, to the flat side of a side-polished fiber, a saturable absorber（SA） was readily implemented. A strong saturable absorption was then readily obtained through an evanescent field interaction with the WTe2 particles. The modulation depth of the prepared SA was measured as ~2.18% at 1.03 μm. By incorporating the proposed SA into an all-fiberized ytterbium-doped fiber ring cavity, stable Qswitched pulses were readily achieved.
基金support of the Australian Research Council under Discovery Projects DP210100721 and DP210100331.
文摘Two-dimensional (2D) heterostructures have shown great potential in advanced photovoltaics due to their restrained carrier recombination, prolonged exciton lifetime and improved light absorption. Herein, a 2D polarized heterostructure is constructed between Janus MoSSe and MoTe_(2) monolayers and is systematically investigated via first-principles calculations. Electronically, the valence band and conduction band of the MoSSe−MoTe_(2) (MoSeS−MoTe_(2)) are contributed by MoTe_(2) and MoSSe layers, respectively, and its bandgap is 0.71 (0.03) eV. A built-in electric field pointing from MoTe_(2) to MoSSe layers appears at the interface of heterostructures due to the interlayer carrier redistribution. Notably, the band alignment and built-in electric field make it a direct z-scheme heterostructure, benefiting the separation of photogenerated electron-hole pairs. Besides, the electronic structure and interlayer carrier reconstruction can be readily controlled by reversing the electric polarization of the MoSSe layer. Furthermore, the light absorption of the MoSSe/MoTe_(2) heterostructure is also improved in comparison with the separated monolayers. Consequently, in this work, a new z-scheme polarized heterostructure with polarization-controllable optoelectronic properties is designed for highly efficient optoelectronics.
基金This work is supported by the National Natural Science Foundation of China(No.21405109)Seed Foundation of State Key Laboratory of Precision Measurement Technology and Instruments,China(No.Pilt1710).
文摘Flash memories and semiconductor p-n junctions are two elementary but incompatible building blocks of most electronic and optoelectronic devices.The pressing demand to efficiently transfer massive data between memories and logic circuits,as well as for high data storage capability and device integration density,has fueled the rapid growth of technique and material innovations.Two-dimensional(2D)materials are considered as one of the most promising candidates to solve this challenge.However,a key aspect for 2D materials to build functional devices requires effective and accurate control of the carrier polarity,concentration and spatial distribution in the atomically thin structures.Here,a non-volatile opto-electrical doping approach is demonstrated,which enables reversibly writing spatially resolved doping patterns in the MoTe2 conductance channel through a MoTe2/hexagonal boron nitride(h-BN)heterostructure.Based on the doping effect induced by the combination of electrostatic modulation and ultraviolet light illumination,a 3-bit flash memory and various homojunctions on the same MoTe2/BN heterostructure are successfully developed.The flash memory achieved 8 well distinguished memory states with a maximum on/off ratio over 10^4.Each state showed negligible decay during the retention time of 2,400 s.The heterostructure also allowed the formation of p-p,n-n,p-n,and n-p homojunctions and the free transition among these states.The MoTe2 p-n homojunction with a rectification ratio of 10^3 exhibited excellent photodetection and photovoltaic performance.Having the memory device and p-n junction built on the same structure makes it possible to bring memory and computational circuit on the same chip,one step further to realize near-memory computing.
基金We thank the Ministry of Science and Technology of China (Nos. 2016YFA0301003 and 2016YFA0300403)the National Natural Science Foundation of China (Nos. 11521404, 11634009, U1632102, 11504230, 11674222, 11574202, 11674226, 11574201, 11655002, and U1632272) for partial support+4 种基金W Y. X. was supported by the National Science Foundation Award (No. DMR-1305293)S. B.乙 was supported by the US Department of Energy (DOE)(No. DESC0002623)The supercomputer time sponsored by National Energy aesearch Scientific Computing Center (NERSC) under DOE contract (No. DE-AC02-05CH11231)the Center for Computational Innovations (CCI) at Rensselaer Polytechnic Institute (RPI) are also acknowledgedThis project has been supported by a grant &om Science and Technology Commission of Shanghai Municipality (No. 16DZ2260200) and the Strategic Priority Research Program of Chinese Academy of Sciences (No. XDB28000000).
文摘Our scanning tunneling microscopy (STM) study observes, for the first time, twin domain boundary (TDB) formations on the surface of WTe2 single crystal, which is glued by solidifying indium to Si substrate. In these TDB regions, a large inhomogeneous strain field, especially a critical shear strain of about 7%, is observed by geometric phase analysis. This observation does not obey the old believe that a small mechanical stress is sufficient to drive thermally-induced TDB formations in two-dimensional materials. To resolve the contradiction, we perform density functional theory calculations combined with elasticity theory analysis, which show that TDBs on WTe2 are entirely displacement-induced, for which a critical strain is necessary to overcome the onset barrier.
文摘Unsaturated magnetoresistance （MR） has been reported in type-II Weyl semimetal WTe2, manifested as a perfect compensation of opposite carriers. We report linear MR （LMR） in WTe2 crystals, the onset of which was identified by constructing the MR mobility spectra for weak fields. The LMR further increased and became dominant for fields stronger than 20 T, while the parabolic MR gradually decayed. The LMR was also observed in high-pressure conditions.
