Advancing complementary metal–oxide–semiconductor(CMOS)technology into the sub-1-nmÅngström-scale technology nodes is expected to involve alternative semiconductor materials as silicon transistors encounte...Advancing complementary metal–oxide–semiconductor(CMOS)technology into the sub-1-nmÅngström-scale technology nodes is expected to involve alternative semiconductor materials as silicon transistors encounter severe performance degradation at physical gate lengths below 10 nm.Two-dimensional(2D)semiconductors have emerged as strong candidates for overcoming the short-channel effects due to their atomically thin bodies that significantly improves the gate control in aggressively scaled field-effect transistors(FETs).Among the growing library of 2D materials;MA_(2)Z_(4)family has attracted increasing attention for its remarkable ambient stability;suitable bandgaps;and favorable carrier transport characteristics.While experimental realization of sub-10-nm 2D FETs remains technologically demanding;computational device simulations using first-principles density functional theory combined with nonequilibrium Green's function transport simulations provide a powerful and cost-effective route for assessing the performance limits and optimal design of ultrascaled FET.This review consolidates the current progress in the computational design of MA_(2)Z_(4)family FETs.We review the physical properties of MoSi_(2)N_(4)that makes them compelling candidates for transistor applications;and the simulated device performance and optimization strategy of MA_(2)Z_(4)family FETs.Finally;we discuss the key challenges and research gaps;as well as the future directions of MA_(2)Z_(4)family FET research toward theÅngström-scale CMOS era.展开更多
文摘在金属钼表面分别制备了MoSi2涂层和MoSi2/Si3N4涂层,利用SEM和XRD分析研究了涂层的微观结构和物相组成,并比较了涂层在1 450℃大气环境下的抗氧化性能.结果表明:两种涂层与基体结合好且均匀致密;MoSi2涂层钼氧化16 h后出现贯穿裂纹,破坏了SiO2保护膜的连续性,导致涂层失效;Si3N4相的引入可明显改善MoSi2基涂层钼的高温抗氧化性,其抗氧化时间达76 h.
基金supported by the Industryand Education Combination Innovation Platform of Intelligent Manufacturing and Graduate Joint Training Base at Guizhou University(Grant No.2020-520000-83-01-324061)the National Natural Science Foundation of China(Grant No.61264004)the High-Level Creative Talent Training Program in Guizhou Province of China(Grant No.(2015)4015)。
基金Singapore National Research Foundation(NRF)Frontier Competitive Research Programme(F-CRP),Grant/Award Number:NRF-F-CRP-2024-0001KwanIm Thong Hood Cho Temple Early Career Chair Professorship in Sustainability+3 种基金National Natural Science Foundation of China,Grant/Award Numbers:12447116,91964101,12274002Ministry of Science and Technology of China,Grant/Award Number:2022YFA1203904Singapore A*STAR IRG,Grant/Award Number:M23M6c0102Singapore Ministry of Education,Grant/Award Number:22-SISSMU-054。
文摘Advancing complementary metal–oxide–semiconductor(CMOS)technology into the sub-1-nmÅngström-scale technology nodes is expected to involve alternative semiconductor materials as silicon transistors encounter severe performance degradation at physical gate lengths below 10 nm.Two-dimensional(2D)semiconductors have emerged as strong candidates for overcoming the short-channel effects due to their atomically thin bodies that significantly improves the gate control in aggressively scaled field-effect transistors(FETs).Among the growing library of 2D materials;MA_(2)Z_(4)family has attracted increasing attention for its remarkable ambient stability;suitable bandgaps;and favorable carrier transport characteristics.While experimental realization of sub-10-nm 2D FETs remains technologically demanding;computational device simulations using first-principles density functional theory combined with nonequilibrium Green's function transport simulations provide a powerful and cost-effective route for assessing the performance limits and optimal design of ultrascaled FET.This review consolidates the current progress in the computational design of MA_(2)Z_(4)family FETs.We review the physical properties of MoSi_(2)N_(4)that makes them compelling candidates for transistor applications;and the simulated device performance and optimization strategy of MA_(2)Z_(4)family FETs.Finally;we discuss the key challenges and research gaps;as well as the future directions of MA_(2)Z_(4)family FET research toward theÅngström-scale CMOS era.
