Efficient thermal management is critical to the reliability and performance of nanoscale electronic and photonic devices,particularly those incorporating multilayer structures.In this study,non-equilibrium molecular d...Efficient thermal management is critical to the reliability and performance of nanoscale electronic and photonic devices,particularly those incorporating multilayer structures.In this study,non-equilibrium molecular dynamics simulations were conducted to systematically investigate the effects of temperature,penetration depth,and Si layer thickness on the interfacial thermal resistance(ITR)in nanometer-scale Mo/Si multilayers,widely employed in extreme ultraviolet lithography.The results indicate that:(i)temperature variations exert a negligible influence on the ITR of amorphous Mo/Si interfaces,which remains stable across the range of 200-900 K;(ii)increasing penetration depth enhances the overlap of phonon density of states,thereby significantly reducing ITR;(iii)the ITR decreases with increasing Si thickness up to4.2 nm due to quasi-ballistic phonon transport,but rises again as phonon scattering becomes more pronounced at larger thicknesses.This study provides quantitative insights into heat transfer mechanisms at amorphous interfaces and also offers a feasible strategy for tailoring interfacial thermal transport through structural design.展开更多
Mo/Si muitilayer mirrors(30 periods,doublelayer thickness 7nm)with the AZ-PF514 resist pattern whose smallest lines and spaces structure was 0.5pm were etched by reactive ion etching(RIE)in a fluorinated plasma.The et...Mo/Si muitilayer mirrors(30 periods,doublelayer thickness 7nm)with the AZ-PF514 resist pattern whose smallest lines and spaces structure was 0.5pm were etched by reactive ion etching(RIE)in a fluorinated plasma.The etch rate,selectivity and etch profile were investigated as a function of the gas mixture,pressure,and plasma rf power.The groove depth and the etch proHle were investigated by an atomic force microscope before RIE,after RIE and after resist removal.展开更多
The thermal and chemical stabilities of Mo/Si multilayer structure used in Bragg-Fresnel optics were studied to get optimal technological parameters of pattern generation.Mo/Si multilayers were annealed at temperature...The thermal and chemical stabilities of Mo/Si multilayer structure used in Bragg-Fresnel optics were studied to get optimal technological parameters of pattern generation.Mo/Si multilayers were annealed at temperature ranging from 360 to 770 K,treated with acetone and 5‰NaOH solution,and characterized by small-angle x-ray diffraction technique as well as x-ray photoelectron spectroscopy and Olympus microscopy.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.52206092)the National Key R&D Program of China(Grant No.2024YFF0508900)+1 种基金the Big Data Computing Center of Southeast Universitythe Center for Fundamental and Interdisciplinary Sciences of Southeast University。
文摘Efficient thermal management is critical to the reliability and performance of nanoscale electronic and photonic devices,particularly those incorporating multilayer structures.In this study,non-equilibrium molecular dynamics simulations were conducted to systematically investigate the effects of temperature,penetration depth,and Si layer thickness on the interfacial thermal resistance(ITR)in nanometer-scale Mo/Si multilayers,widely employed in extreme ultraviolet lithography.The results indicate that:(i)temperature variations exert a negligible influence on the ITR of amorphous Mo/Si interfaces,which remains stable across the range of 200-900 K;(ii)increasing penetration depth enhances the overlap of phonon density of states,thereby significantly reducing ITR;(iii)the ITR decreases with increasing Si thickness up to4.2 nm due to quasi-ballistic phonon transport,but rises again as phonon scattering becomes more pronounced at larger thicknesses.This study provides quantitative insights into heat transfer mechanisms at amorphous interfaces and also offers a feasible strategy for tailoring interfacial thermal transport through structural design.
基金the German Research Society Deutsche Forschungsgesellschaft(Forschergruppe Nanometerschichtsysteme).
文摘Mo/Si muitilayer mirrors(30 periods,doublelayer thickness 7nm)with the AZ-PF514 resist pattern whose smallest lines and spaces structure was 0.5pm were etched by reactive ion etching(RIE)in a fluorinated plasma.The etch rate,selectivity and etch profile were investigated as a function of the gas mixture,pressure,and plasma rf power.The groove depth and the etch proHle were investigated by an atomic force microscope before RIE,after RIE and after resist removal.
基金Supported by the National Natural Science Foundation of China under Grant No.69578023。
文摘The thermal and chemical stabilities of Mo/Si multilayer structure used in Bragg-Fresnel optics were studied to get optimal technological parameters of pattern generation.Mo/Si multilayers were annealed at temperature ranging from 360 to 770 K,treated with acetone and 5‰NaOH solution,and characterized by small-angle x-ray diffraction technique as well as x-ray photoelectron spectroscopy and Olympus microscopy.
