Low valence vanadium oxide(VO2-x) thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then proc- essed through rapid thermal annealing...Low valence vanadium oxide(VO2-x) thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then proc- essed through rapid thermal annealing. The effects of the annealing on the structure and phase transition property of VO2 were discussed. X-ray photoelectron spectroscopy, X-ray diffraction tech- nique and Fourier transform infrared spectroscopy were employed to study the phase composition and structure of the thin films. The resistance-temperature property was measured. The results show that VO2 thin film is obtained after annealed at 320 ℃ for 3 h, its phase transition tempera- ture is 56 ℃, and the resistance changes by more than 2 orders. The vanadium oxide thin films are applicable in thermochromic smart windows, and the deposition and annealing process is compatible with micro electromechanical system process.展开更多
The effects of two types of magnetic fields,namely harmonic magnetic field(HMF)and pulse magnetic field(PMF)on magnetic flux density,Lorentz force,temperature field,and microstructure of high purity Cu were studied by...The effects of two types of magnetic fields,namely harmonic magnetic field(HMF)and pulse magnetic field(PMF)on magnetic flux density,Lorentz force,temperature field,and microstructure of high purity Cu were studied by numerical simulation and experiment during electromagnetic direct chill casting.The magnetic field is induced by a magnetic generation system including an electromagnetic control system and a cylindrical crystallizer of 300 mm in diameter equipped with excitation coils.A comprehensive mathematical model for high purity Cu electromagnetic casting was established in finite element method.The distributions of magnetic flux density and Lorentz force generated by the two magnetic fields were acquired by simulation and experimental measurement.The microstructure of billets produced by HMF and PMF casting was compared.Results show that the magnetic flux density and penetrability of PMF are significantly higher than those of HMF,due to its faster variation in transient current and higher peak value of magnetic flux density.In addition,PMF drives a stronger Lorentz force and deeper penetration depth than HMF does,because HMF creates higher eddy current and reverse electromagnetic field which weakens the original electromagnetic field.The microstructure of a billet by HMF is composed of columnar structure regions and central fine grain regions.By contrast,the billet by PMF has a uniform microstructure which is characterized by ultra-refined and uniform grains because PMF drives a strong dual convection,which increases the uniformity of the temperature field,enhances the impact of the liquid flow on the edge of the liquid pool and reduces the curvature radius of liquid pool.Eventually,PMF shows a good prospect for industrialization.展开更多
Cobalt thin films were deposited on silicon substrates by magnetron sputtering two commercial cobalt targets with different pass-through fluxes(PTFs).The influences of PTF on the magnetic properties of sputtered thin ...Cobalt thin films were deposited on silicon substrates by magnetron sputtering two commercial cobalt targets with different pass-through fluxes(PTFs).The influences of PTF on the magnetic properties of sputtered thin films were investigated.The results indicate that under the same sputtering conditions,cobalt thin film deposited by Co target with high PTF(84.21%) has lower remanence ratio(0.65),while cobalt thin film prepared by Co target with low PTF(69.13%) has higher remanence ratio(0.87).Through introducing an external magnetic field parallel to the film surface during sputtering processes,both the remanence ratios of cobalt thin films prepared by the two targets can be enhanced to approach 1.High-resolution transmission electron microscopy(HRTEM) images show that in the absence of the external magnetic field during sputtering,cobalt thin film deposited by the target with high PTF is randomly oriented in crystallographic orientations,which is due to that Co atoms have no enough time to migrate and diffuse on substrate and the atomic stacking is disordered.It is worth mentioning that crystallographic orientations of cobalt thin film deposited by target with low PTF are relatively consistent,resulting in relatively higher remanence ratio.In addition,HRTEM analysis indicates that the external magnetic field during sputtering drives the Co grains to arrange in a regular order with(002) orientation,leading to the improvement in remanence ratios.展开更多
High power pulsed magnetron sputtering（HPPMS）, a novel physical vapor deposition technology, was applied to prepare vanadium films on aluminum alloy substrate in this paper. The influence of target–substrate dista...High power pulsed magnetron sputtering（HPPMS）, a novel physical vapor deposition technology, was applied to prepare vanadium films on aluminum alloy substrate in this paper. The influence of target–substrate distance（Dt–s）（ranging from 8 to 20 cm） on phase structure, surface morphology, deposition rate, and corrosion resistance of vanadium films was investigated. The results show that the vanadium films are textured with a preferential orientation in the（111） direction except for that fabricated at 20 cm. With Dt–sincreasing, the intensity of（111） diffraction peak of the films decreases and there exists a proper distance leading to the minimum surface roughness of 0.65 nm. The deposition rate decreases with Dt–sincreasing. All the V-coated aluminum samples possess better corrosion resistance than the control sample. The sample fabricated at Dt–sof 12 cm demonstrates the best corrosion resistance with the corrosion potential increasing by 0.19 V and the corrosion current decreasing by an order of magnitude compared with that of the substrate. The samples gain further improvement in corrosion resistance after annealing, and if compared with that of annealed aluminum alloy, then the corrosion potential of the sample fabricated at 20 cm increases by 0.415 V and the corrosion current decreases by two orders of magnitude after annealed at 200 °C. If the annealing temperature further rises to 300 °C, then the corrosion resistance of samples increases less obviously than that of the control sample.展开更多
基金Natural Science Foundation of Tianjin(No.043100811)the Key Program of Natural Science Foundation of Tianjin(No.08JCZDJC17500)
文摘Low valence vanadium oxide(VO2-x) thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then proc- essed through rapid thermal annealing. The effects of the annealing on the structure and phase transition property of VO2 were discussed. X-ray photoelectron spectroscopy, X-ray diffraction tech- nique and Fourier transform infrared spectroscopy were employed to study the phase composition and structure of the thin films. The resistance-temperature property was measured. The results show that VO2 thin film is obtained after annealed at 320 ℃ for 3 h, its phase transition tempera- ture is 56 ℃, and the resistance changes by more than 2 orders. The vanadium oxide thin films are applicable in thermochromic smart windows, and the deposition and annealing process is compatible with micro electromechanical system process.
基金financially supported by the National Key Research and Development Program of China(Grant No.2017YFB0305504)。
文摘The effects of two types of magnetic fields,namely harmonic magnetic field(HMF)and pulse magnetic field(PMF)on magnetic flux density,Lorentz force,temperature field,and microstructure of high purity Cu were studied by numerical simulation and experiment during electromagnetic direct chill casting.The magnetic field is induced by a magnetic generation system including an electromagnetic control system and a cylindrical crystallizer of 300 mm in diameter equipped with excitation coils.A comprehensive mathematical model for high purity Cu electromagnetic casting was established in finite element method.The distributions of magnetic flux density and Lorentz force generated by the two magnetic fields were acquired by simulation and experimental measurement.The microstructure of billets produced by HMF and PMF casting was compared.Results show that the magnetic flux density and penetrability of PMF are significantly higher than those of HMF,due to its faster variation in transient current and higher peak value of magnetic flux density.In addition,PMF drives a stronger Lorentz force and deeper penetration depth than HMF does,because HMF creates higher eddy current and reverse electromagnetic field which weakens the original electromagnetic field.The microstructure of a billet by HMF is composed of columnar structure regions and central fine grain regions.By contrast,the billet by PMF has a uniform microstructure which is characterized by ultra-refined and uniform grains because PMF drives a strong dual convection,which increases the uniformity of the temperature field,enhances the impact of the liquid flow on the edge of the liquid pool and reduces the curvature radius of liquid pool.Eventually,PMF shows a good prospect for industrialization.
基金financially supported by the National Key R&D Program of China(No.2017YFB0305502)the National Natural Science Foundation of China(Nos.51571017,51671023,and 51871018)+2 种基金the Beijing Natural Science Foundation(No.2192031)the Key Science and Technology Projects of Beijing Education Committee(No.KZ201810011013)the Fundamental Research Funds for the Central Universities(No.FRF-TP-19-011B1)。
文摘Cobalt thin films were deposited on silicon substrates by magnetron sputtering two commercial cobalt targets with different pass-through fluxes(PTFs).The influences of PTF on the magnetic properties of sputtered thin films were investigated.The results indicate that under the same sputtering conditions,cobalt thin film deposited by Co target with high PTF(84.21%) has lower remanence ratio(0.65),while cobalt thin film prepared by Co target with low PTF(69.13%) has higher remanence ratio(0.87).Through introducing an external magnetic field parallel to the film surface during sputtering processes,both the remanence ratios of cobalt thin films prepared by the two targets can be enhanced to approach 1.High-resolution transmission electron microscopy(HRTEM) images show that in the absence of the external magnetic field during sputtering,cobalt thin film deposited by the target with high PTF is randomly oriented in crystallographic orientations,which is due to that Co atoms have no enough time to migrate and diffuse on substrate and the atomic stacking is disordered.It is worth mentioning that crystallographic orientations of cobalt thin film deposited by target with low PTF are relatively consistent,resulting in relatively higher remanence ratio.In addition,HRTEM analysis indicates that the external magnetic field during sputtering drives the Co grains to arrange in a regular order with(002) orientation,leading to the improvement in remanence ratios.
基金financially supported by the National Natural Science Foundation of China (Nos. 51175118 and U1330110)the Open Foundation of Science and Technology on Surface Physics and Chemistry Laboratory (No. SPC201104)
文摘High power pulsed magnetron sputtering（HPPMS）, a novel physical vapor deposition technology, was applied to prepare vanadium films on aluminum alloy substrate in this paper. The influence of target–substrate distance（Dt–s）（ranging from 8 to 20 cm） on phase structure, surface morphology, deposition rate, and corrosion resistance of vanadium films was investigated. The results show that the vanadium films are textured with a preferential orientation in the（111） direction except for that fabricated at 20 cm. With Dt–sincreasing, the intensity of（111） diffraction peak of the films decreases and there exists a proper distance leading to the minimum surface roughness of 0.65 nm. The deposition rate decreases with Dt–sincreasing. All the V-coated aluminum samples possess better corrosion resistance than the control sample. The sample fabricated at Dt–sof 12 cm demonstrates the best corrosion resistance with the corrosion potential increasing by 0.19 V and the corrosion current decreasing by an order of magnitude compared with that of the substrate. The samples gain further improvement in corrosion resistance after annealing, and if compared with that of annealed aluminum alloy, then the corrosion potential of the sample fabricated at 20 cm increases by 0.415 V and the corrosion current decreases by two orders of magnitude after annealed at 200 °C. If the annealing temperature further rises to 300 °C, then the corrosion resistance of samples increases less obviously than that of the control sample.
