Atomically thin MoS_2 has draw n tremendous attention due to its great potential in a range of electronic devices such as photodetectors,field effect transistors( FET),and sensors. In the past few years,numerous metho...Atomically thin MoS_2 has draw n tremendous attention due to its great potential in a range of electronic devices such as photodetectors,field effect transistors( FET),and sensors. In the past few years,numerous methods including mechanical cleavage,liquid exfoliation,chemical vapor deposition( CVD)have been devoted to synthesizing tw o dimensional atomically thin MoS_2. Among these methods,CVD is the most promising method for preparing large-size and highly crystalline MoS_2 monolayers,exhibiting relatively good optical and electrical properties. Nevertheless,there are so many experiment parameters in CVD process that w e should take into account,w hich makes it still a challenge for us to grow large-scale,single-crystalline MoS_2 monolayer films suitable for practical applications. This review systematically summarized some synthetic strategies of MoS_2 by CVD in recent years. We also discussed in detail how these vital factors such as substrates,carrier gases,M o precursors,influenced the process of grow th,w hich w as expected to help us to controllably synthesize high-quality MoS_2 and other kinds of transition metal dichalcogenides including WS_2,VS_2,WSe_2 and so forth.展开更多
基金Sponsored by the National Key R&D Program of China(Grant Nos.2017YFA0206301 and 2016YFA0200102)the National Natural Science Foundation of China(Grant Nos.51631001,51590882,51672010 and 81421004)
文摘Atomically thin MoS_2 has draw n tremendous attention due to its great potential in a range of electronic devices such as photodetectors,field effect transistors( FET),and sensors. In the past few years,numerous methods including mechanical cleavage,liquid exfoliation,chemical vapor deposition( CVD)have been devoted to synthesizing tw o dimensional atomically thin MoS_2. Among these methods,CVD is the most promising method for preparing large-size and highly crystalline MoS_2 monolayers,exhibiting relatively good optical and electrical properties. Nevertheless,there are so many experiment parameters in CVD process that w e should take into account,w hich makes it still a challenge for us to grow large-scale,single-crystalline MoS_2 monolayer films suitable for practical applications. This review systematically summarized some synthetic strategies of MoS_2 by CVD in recent years. We also discussed in detail how these vital factors such as substrates,carrier gases,M o precursors,influenced the process of grow th,w hich w as expected to help us to controllably synthesize high-quality MoS_2 and other kinds of transition metal dichalcogenides including WS_2,VS_2,WSe_2 and so forth.
