期刊文献+
共找到108篇文章
< 1 2 6 >
每页显示 20 50 100
Ba_2SbGaS_5 : Solid-state Synthesis, Crystal and Electronic Structures, and Property Characterization 被引量:1
1
作者 耿磊 张浩 程文旦 《Chinese Journal of Structural Chemistry》 SCIE CAS CSCD 2013年第4期538-544,共7页
Single crystal of Ba2SbGaSs has been synthesized by the high temperature solidstate reaction method. The compound crystallizes in the orthorhombic space group Pnma with a = 12.177(4), b = 8.880(3), c = 8.982(3) ... Single crystal of Ba2SbGaSs has been synthesized by the high temperature solidstate reaction method. The compound crystallizes in the orthorhombic space group Pnma with a = 12.177(4), b = 8.880(3), c = 8.982(3) A, V= 971.4(6) A3, Z = 4, De = 4.284 g/cm3,μ = 14.487 mm-1, F(000) - 1096, the final R = 0.0171 and wR = 0.0384 for all data. The structure comprises an infinite one-dimensional 1∞[SbGaS5]4- anionic chain constructed from the GaS4 tetrahedra and the SbS5 polyhedra via sharing edge alternately. The paralleled 1∞[SbGaS5]4anionic chains engage with each other and form the two-dimensional Sb-Ga-S layer perpendicular to a-axis with the isolated Ba2+ cations arranged between layers. The IR spectrum and the UV-Vis spectrum have been investigated. Also, the first-principles band structure and density of states calculations indicate that the compound belongs to indirect semiconductor with the band gap of 2.1 eV, which is supported by the UV-Vis diffuse reflectance results. 展开更多
关键词 crystal structure solid-state synthesis X-ray diffraction electronic structure calculation
在线阅读 下载PDF
Next Generation Electronics & Photonics
2
《Nanotechnology and Precision Engineering》 2025年第1期I0001-I0001,共1页
This special issue will include reviews,regular papers,and short communications,and reports in the fields for next generation electronics and photonics.The topics include but not restricted in advanced microelectronic... This special issue will include reviews,regular papers,and short communications,and reports in the fields for next generation electronics and photonics.The topics include but not restricted in advanced microelectronic devices and materials,low-dimensional materials and novel nanodevice applications,flexible/wearable/implantable electronics,wide bandgap semiconductor materials and devices,photoelectronics,photonics,advanced display technologies,nanophotonics,integrated quantum photonics,photovoltaics,energy harvesting and self-powered wireless sensing,sensors,micro-actuators,MEMS,microfluidics,and bioMEMS,etc. 展开更多
关键词 PHOTONICS advanced microelectronic devices advanced microelectronic devices materialslow dimensional next generation electronics low dimensional materials novel nanodevice applications flexible electronics
在线阅读 下载PDF
Capacitorless Three-phase Solid-state Power Filter(SSPF) for DC–AC Inverter Applications
3
作者 Haitham Kanakri Euzeli Cipriano dos Santos Maher Rizkalla 《CES Transactions on Electrical Machines and Systems》 2025年第4期495-507,共13页
Reliability is a persistent challenge in power electronics, with component failures significantly compromising system performance. Capacitors, widely used in power converters for filtering, contribute to approximately... Reliability is a persistent challenge in power electronics, with component failures significantly compromising system performance. Capacitors, widely used in power converters for filtering, contribute to approximately 30% of failures, predominantly due to electrochemical corrosion leading to capacitance degradation and catastrophic breakdowns. This paper presents a novel capacitor-free solid-state power filter(SSPF) for three-phase inverters, offering a transformative approach to mitigate reliability issues associated with conventional inductor-capacitor(LC) and active output filters(AOFs). Unlike AOFs, which depend on compact LC structures, the SSPF eliminates capacitors entirely, circumventing their inherent failure modes. Leveraging advanced solid-state devices and transformer technology, the SSPF achieves superior filtering performance, enhances system reliability, and significantly reduces component count, utilizing half the metal-oxidesemiconductor field effect transistor(MOSFET) switches required by AOFs. This design not only lowers costs but also improves efficiency. Simulation and experimental results demonstrate the SSPF's capability to deliver a sinusoidal output voltage at the fundamental frequency. These attributes position the SSPF as a robust, cost-effective, and innovative solution for modern power electronics applications. 展开更多
关键词 Active output filter(AOF) Capacitorless topology Electrolytic capacitor lifetime Power electronics reliability solid-state power filter(SSPF)
在线阅读 下载PDF
A lithium–tin fluoride anode enabled by ionic/electronic conductive paths for garnet-based solid-state lithium metal batteries
4
作者 Lei Zhang Qian-Kun Meng +8 位作者 Xiang-Ping Feng Ming Shen Yu-Qing Zhang Quan-Chao Zhuang Run-Guo Zheng Zhi-Yuan Wang Yan-Hua Cui Hong-Yu Sun Yan-Guo Liu 《Rare Metals》 SCIE EI CAS CSCD 2024年第2期575-587,共13页
The high energy density and stability of solid-state lithium metal batteries(SSLMBs)have garnered great attention.Garnet-type oxides,especially Li_(6.4)La_(3)Zr_(1.4)Ta_(0.6)O_(12)(LLZTO),with high ionic conductivity,... The high energy density and stability of solid-state lithium metal batteries(SSLMBs)have garnered great attention.Garnet-type oxides,especially Li_(6.4)La_(3)Zr_(1.4)Ta_(0.6)O_(12)(LLZTO),with high ionic conductivity,wide electrochemical window,and stability to Li metal anode,are promising solid-state electrolyte(SSEs)materials for SSLMBs.However,Li/LLZTO interface issues including high interface resistance,inhomogeneous Li deposition,and Li dendrite growth have hindered the practical application of SSLMBs.Herein,a multi-functional Li–SnF_(2) composite anode with Li,LiF,and Li-Sn alloy was specifically designed and prepared.The composite anode improves the wettability to LLZTO,constructing an intimate contact interface between it and LLZTO.Meanwhile,ionic/electronic conductive paths in situ formed at the interface can effectively uniform Li deposition and suppress Li dendrite.The solid-state symmetric cell exhibits low interface resistance(11Ω·cm^(2)) and high critical current density(1.3 mA·cm^(−2))at 25℃.The full SSLMB based on LiFePO_(4) or LiNi_(0.5)Co_(0.2)Mn_(0.3)O_(2) cathode also shows stable cycling performance and high rate capability.This work provides a new composite anode strategy for achieving high-energy density and high-safety SSLMBs. 展开更多
关键词 solid-state lithium metal batteries(SSLMBs) Lithium-tin fluoride anode Ionic/electronic conductive Interface resistance Lithium dendrite
原文传递
Moisture-Induced Non-Equilibrium Phase Segregation in Triple Cation Mixed Halide Perovskite Monitored by In Situ Characterization Techniques and Solid-State NMR 被引量:1
5
作者 Mohammad Ali Akhavan Kazemi Nicolas Folastre +9 位作者 Parth Raval Michel Sliwa Jean Marie Vianney Nsanzimana Sema Golonu Arnaud Demortiere Jean Rousset Olivier Lafon Laurent Delevoye G.N.Manjunatha Reddy Frédéric Sauvage 《Energy & Environmental Materials》 SCIE EI CAS CSCD 2023年第2期185-194,共10页
Environmental stability is a major bottleneck of perovskite solar cells.Only a handful of studies are investigating the effect of moisture on the structural degradation of the absorber.They mostly rely on ex situ expe... Environmental stability is a major bottleneck of perovskite solar cells.Only a handful of studies are investigating the effect of moisture on the structural degradation of the absorber.They mostly rely on ex situ experiments and on completely degraded samples,which restrict the assessment on initial and final stage.By combining in situ X-ray diffraction under controlled 85%relative humidity,and live observations of the water-induced degradation using liquid-cell transmission electron microscopy,we reveal two competitive degradation paths leading on one hand to the decomposition of state-of-theart mixed cation/anion(Cs_(0.05)(MA_(0.17)FA_(0.83))_(0.95)Pb(Br_(0.17)I_(0.83))_(3)(CsMAFA)into PbI_(2) through a dissolution/recrystallization mechanism and,on the other hand,to a non-equilibrium phase segregation leading to CsPb_(2)Br_(5) and a Cesium-poor/iodide-rich Cs_(0.05)-x(MA_(0.17)FA_(0.83))_(0.95)Pb(Br_(0.17-2y)I_(0.83)+2y)_(3) perovskite.This degradation mechanism is corroborated at atomic-scale resolution through solid-state ^(1)H and ^(133)Cs NMR analysis.Exposure to moisture leads to a film containing important heterogeneities in terms of morphology,photoluminescence intensities,and lifetimes.Our results provide new insights and consensus that complex perovskite compositions,though very performant as champion devices,are comparatively metastable,a trait that limits the chances to achieve long-term stability. 展开更多
关键词 liquid-cell transmission electron microscopy moisture degradation perovskite stability phase segregation solid-state NMR
在线阅读 下载PDF
Visualizing dynamic evolution of surface electrochemical potential on solid-state electrolyte via spatially resolved photoelectron measurements
6
作者 Jinhui Pei Xiaoqin Chen +1 位作者 Yanxiao Ning Qiang Fu 《Nano Research》 2026年第1期1041-1049,共9页
The dynamic evolution of surface electrochemical potential of the electrolyte plays a key role in the performance of solid-state electrochemical devices,while its real-time characterization remains challenging.Here,we... The dynamic evolution of surface electrochemical potential of the electrolyte plays a key role in the performance of solid-state electrochemical devices,while its real-time characterization remains challenging.Here,we visualize the dynamic evolution of the surface electrochemical potential on yttria-stabilized zirconia(YSZ)in a planar Au|YSZ|Au model cell,using spatially resolved photoelectron-based techniques including photoemission electron microscopy(PEEM)and micro-region X-ray photoelectron spectroscopy(μ-XPS).PEEM reveals two sequential reaction fronts in YSZ under cathodic polarization,corresponding to the evolution of the chemical potential of oxygen ions,with a faster propagation speed on the top surface and a slower one in the near-surface region.XPS measurements quantitatively reveal the time-dependent electric potential distribution across YSZ surface.COMSOL simulations confirm the presence of a stronger electric field at the top surface,particularly at the advancing reaction fronts,compared to the near-surface region.The critical role of the electric field in driving surface reactions is further supported by the enhanced reactions observed at the tips of the zigzag-shaped electrode edges.This work offers mechanistic insights into the coupling between electrochemical potential dynamics and electrolyte reactions. 展开更多
关键词 electrochemical device solid-state electrolyte yttria-stabilized zirconia(YSZ) oxygen ion migration in situ photoemission electron microscopy(PEEM) micro-region X-ray photoelectron spectroscopy(μ-XPS)
原文传递
Foreword to the Journal of Microelectronic Manufacturing
7
作者 Tianchun Ye 《Journal of Microelectronic Manufacturing》 2018年第1期1-1,共1页
Over 70 years have passed since the first transistor was invented at Bell Labs,New Jersey,USA on 16 December 1947 by William Shockley,John Bardeen and Walter Brattain,which was perhaps the most important electronics e... Over 70 years have passed since the first transistor was invented at Bell Labs,New Jersey,USA on 16 December 1947 by William Shockley,John Bardeen and Walter Brattain,which was perhaps the most important electronics event of the 20th century as it later made possible the integrated circuit(IC)and microprocessor that are the basis of modern electronics.The first electronic products were made from individual transistors but before long engineers learnt how to integrate several simultaneously,giving birth to the first IC in 1957.Industry development thereafter followed a predominantly evolutionary process with the number of transistors on an IC increasing exponentially each year,a process known as Moore’s Law after one of the semiconductor industry’s key founding fathers. 展开更多
关键词 microelectronic MANUFACTURING USA electronics INTEGRATED circuit(IC)
在线阅读 下载PDF
DESIGN AND RESEARCH OF QUASI-PLANAR SELF-ALIGNED SILICON AVALANCHE ELECTRON EMISSION ARRAY
8
作者 Zhu Dazhong( Institute of Power Devices, Department of Information and Electronic Engineering, Zhejiang University, Hangzhou 310027) 《Journal of Electronics(China)》 1999年第1期88-92,共5页
The device structure and technical processings of quasi-planar self-aligned silicon avalanche electron emission array arc introduced. The processing step at the edge of electron emission region is about 10nm only and ... The device structure and technical processings of quasi-planar self-aligned silicon avalanche electron emission array arc introduced. The processing step at the edge of electron emission region is about 10nm only and the width of self-aligned current channel of shallow As implantation is about 3μm. Its I-V characteristics show a larger linear region and lower series resistance than that of the previous silicon avalanche electron emission devices. Some of the electron emission characteristics are also discussed in this paper. 展开更多
关键词 VACUUM microelectronics electron emission Cold CATHODE
在线阅读 下载PDF
Thermionic electron emission in the 1D edge-to-edge limit
9
作者 Tongyao Zhang Hanwen Wang +2 位作者 Xiuxin Xia Chengbing Qin Xiaoxi Li 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第5期733-737,共5页
Thermionic emission is a tunneling phenomenon,which depicts that electrons on the surface of a conductor can be pulled out into the vacuum when they are subjected to high electrical tensions while being heated hot eno... Thermionic emission is a tunneling phenomenon,which depicts that electrons on the surface of a conductor can be pulled out into the vacuum when they are subjected to high electrical tensions while being heated hot enough to overtake their work functions.This principle has led to the great success of the so-called vacuum tubes in the early 20 th century.To date,major challenges still remain in the miniaturization of a vacuum channel transistor for on-chip integration in modern solid-state integrated circuits.Here,by introducing nano-sized vacuum gaps(~200 nm)in a van der Waals heterostructure,we successfully fabricated a one-dimensional(1 D)edge-to-edge thermionic emission vacuum tube using graphene as the filament.With the increasing collector voltage,the emitted current exhibits a typical rectifying behavior,with the maximum emission current reaching 200 p A and an ON-OFF ratio of 10;.In addition,it is found that the maximum emission current is proportional to the number of the layers of graphene.Our results expand the research of nano-sized vacuum tubes to an unexplored physical limit of 1 D edge-to-edge emission,and hold great promise for future nano-electronic systems based on it. 展开更多
关键词 vacuum microelectronics thermionic emission GRAPHENE electronic transport in nanoscale materials and structures
原文传递
Tuning the electron transport behavior at Li/LATP interface for enhanced cyclability of solid-state Li batteries 被引量:1
10
作者 Linshan Luo Feng Zheng +17 位作者 Haowen Gao Chaofei Lan Zhefei Sun Wei Huang Xiang Han Ziqi Zhang Pengfei Su Peng Wang Shengshi Guo Guangyang Lin Jianfang Xu Jianyuan Wang Jun Li Cheng Li Qiaobao Zhang Shunqing Wu Ming-Sheng Wang Songyan Chen 《Nano Research》 SCIE EI CSCD 2023年第1期1634-1641,共8页
An interlayer is usually employed to tackle the interfacial instability issue between solid electrolytes(SEs)and Li metal caused by the side reaction.However,the failure mechanism of the ionic conductor interlayers,es... An interlayer is usually employed to tackle the interfacial instability issue between solid electrolytes(SEs)and Li metal caused by the side reaction.However,the failure mechanism of the ionic conductor interlayers,especially the influence from electron penetration,remains largely unknown.Herein,using Li1.3Al0.3Ti1.7(PO4)3(LATP)as the model SE and LiF as the interlayer,we use metal semiconductor contact barrier theory to reveal the failure origin of Li/LiF@LATP interface based on the calculation results of density functional theory(DFT),in which electrons can easily tunnel through the LiF grain boundary with F vacancies due to its narrow barrier width against electron injection,followed by the reduction of LATP.Remarkably,an Al-LiF bilayer between Li/LATP is found to dramatically promote the interfacial stability,due to the highly increased barrier width and homogenized electric field at the interface.Consequently,the Li symmetric cells with Al-LiF bilayer can exhibit excellent cyclability of more than 2,000 h superior to that interlayered by LiF monolayer(~860 h).Moreover,the Li/Al-LiF@LATP/LiFePO4 solid-state batteries deliver a capacity retention of 83.2%after 350 cycles at 0.5 C.Our findings emphasize the importance of tuning the electron transport behavior by optimizing the potential barrier for the interface design in high-performance solid-state batteries. 展开更多
关键词 solid-state electrolyte Li metal LIF Al electron transport interfacial barrier
原文传递
芯片尺寸封装技术 被引量:12
11
作者 杜晓松 杨邦朝 《微电子学》 CAS CSCD 北大核心 2000年第6期418-421,共4页
芯片尺寸封装 (CSP)技术是近年来发展最为迅速的微电子封装新技术。文中介绍了该技术的基本概念、特点、主要类型及其应用现状和展望。
关键词 芯片尺寸封装 电子封装技术 微电子 集成电路
在线阅读 下载PDF
“EDA技术”课程实验教学的探索 被引量:18
12
作者 谢小东 李平 《实验技术与管理》 CAS 北大核心 2012年第6期181-183,共3页
结合申报"四川省精品课程"和"国家特色专业"的成功经验,从实验安排、实验内容、实验教材和实验平台等角度对该课程的实验教学进行了讨论,目的是使该课程开出特色、突出实用性,成为学生实实在在的"饭碗"... 结合申报"四川省精品课程"和"国家特色专业"的成功经验,从实验安排、实验内容、实验教材和实验平台等角度对该课程的实验教学进行了讨论,目的是使该课程开出特色、突出实用性,成为学生实实在在的"饭碗"课程。 展开更多
关键词 微电子学 EDA 教学特色
在线阅读 下载PDF
纳米电子技术 被引量:6
13
作者 袁寿财 朱长纯 《半导体技术》 CAS CSCD 北大核心 1999年第1期6-9,共4页
微电子技术引发了本世纪的信息革命。纳米科学技术将成为二十一世纪信息时代的核心和国际科学界和工程技术界关注的热点。
关键词 微电子技术 极限 纳米电子技术
在线阅读 下载PDF
双面硅条探测器的研制与测试 被引量:3
14
作者 孙立杰 林承键 +10 位作者 杨峰 郭昭乔 郭天舒 徐新星 包鹏飞 杨磊 贾会明 马南茹 张焕乔 刘祖华 夏清良 《原子能科学技术》 EI CAS CSCD 北大核心 2015年第2期336-342,共7页
研制了双面硅条探测器。探测器灵敏面积为48mm×48mm,厚约300μm,结面和欧姆面的硅条互相垂直,均由相互平行、宽度相等的48条组成,每条宽0.9mm、间距0.1mm。对其电气特性(耗尽偏压、反向漏电流、条间电阻)和探测特性(上升时间、... 研制了双面硅条探测器。探测器灵敏面积为48mm×48mm,厚约300μm,结面和欧姆面的硅条互相垂直,均由相互平行、宽度相等的48条组成,每条宽0.9mm、间距0.1mm。对其电气特性(耗尽偏压、反向漏电流、条间电阻)和探测特性(上升时间、能量分辨、条间串扰)进行了测试。在偏压为-15V时,各条平均反向漏电流小于10nA。对于从结面入射的5.157 MeV的α粒子,前放信号上升时间约45ns,结面各条的能量分辨率约0.6%-0.7%,基本无条间串扰;欧姆面各条能量分辨率较差,存在条间串扰。 展开更多
关键词 双面硅条探测器 微电子工艺 电气特性 探测特性 条间串扰
在线阅读 下载PDF
CMOS图像传感器中分段电容DAC非理想因素研究(英文) 被引量:2
15
作者 孙权 姚素英 +2 位作者 徐文静 聂凯明 徐江涛 《传感技术学报》 CAS CSCD 北大核心 2014年第1期32-39,共8页
CMOS图像传感器信号处理中通常采用分段电容DAC产生斜坡参考电压。研究了分段电容DAC精确的电容失配及寄生与其转换精度的关系式。基于对分段电容DAC工作原理的研究,导出了电容失配及寄生模型;针对其分数桥接电容失配、各二进制电容间... CMOS图像传感器信号处理中通常采用分段电容DAC产生斜坡参考电压。研究了分段电容DAC精确的电容失配及寄生与其转换精度的关系式。基于对分段电容DAC工作原理的研究,导出了电容失配及寄生模型;针对其分数桥接电容失配、各二进制电容间的失配及寄生电容问题进行了理论分析;对分段电容DAC进行非理想因素仿真,设计了一个采用分段电容DAC的10位单斜ADC并对其进行测试,仿真和测试结果均验证了理论分析的正确性。上述理论分析结果可作为分段电容DAC的设计指导。 展开更多
关键词 微电子学与固体电子学 电容失配 寄生 转换精度
在线阅读 下载PDF
微电子技术在生物医学中的应用与发展 被引量:6
16
作者 谢翔 张春 王志华 《电路与系统学报》 CSCD 2003年第2期80-85,共6页
微电子技术与生物医学之间有着非常紧密的联系。一方面微电子技术的发展,将大大地推动生物医学的发展,另一方面生物医学的研究成果同样也将对微电子技术的发展起着巨大的促进作用。本文将从生物医学电子学的几个重要发展领域:生物医学... 微电子技术与生物医学之间有着非常紧密的联系。一方面微电子技术的发展,将大大地推动生物医学的发展,另一方面生物医学的研究成果同样也将对微电子技术的发展起着巨大的促进作用。本文将从生物医学电子学的几个重要发展领域:生物医学传感器、神经电极、植入式电子系统、监护技术、生物芯片、分子和生物分子电子学以及仿生系统等的基本概念出发,结合国际上最新进展介绍微电子技术和生物医学的相互作用与发展,并总结国际上的最新技术和研究动向。 展开更多
关键词 微电子技术 生物医学 生物医学电子学 生物医学传感器 神经电极 植入式电子系统 监护技术 生物芯片 分子和生物分子电子学 仿生系统
在线阅读 下载PDF
复合静电-磁浸没透镜的宽束曲轴聚焦性质及像差理论 被引量:1
17
作者 程敏 唐天同 姚振华 《真空科学与技术》 EI CAS CSCD 北大核心 2002年第1期5-9,共5页
研究了新型的复合静电 磁浸没透镜的曲光轴高斯电子光学性质及像差特性。应用宽束曲轴理论 ,导出了三维局部正交坐标系中的电子运动的中心轨迹方程和曲光轴的近轴轨迹方程 ;利用数学软件Mathematica推导出了复合静电 磁浸没透镜全部曲... 研究了新型的复合静电 磁浸没透镜的曲光轴高斯电子光学性质及像差特性。应用宽束曲轴理论 ,导出了三维局部正交坐标系中的电子运动的中心轨迹方程和曲光轴的近轴轨迹方程 ;利用数学软件Mathematica推导出了复合静电 磁浸没透镜全部曲轴二级像差系数。作为实例 ,文中针对轴上磁场和电场具有某种解析表达式的旋转对称的静电 磁浸没透镜系数 ,计算了它的曲轴高斯聚焦特性和二级像差 。 展开更多
关键词 静电-磁浸没透镜 曲光轴 像差 轨迹 聚焦性质 微电子技术 带电粒子光学
在线阅读 下载PDF
四管像素满阱容量影响因素研究 被引量:3
18
作者 孙权 姚素英 +2 位作者 徐江涛 徐超 张冬苓 《传感技术学报》 CAS CSCD 北大核心 2013年第6期815-819,共5页
在分析光电二极管电容、浮空节点电容以及电荷转移效果这三方面影响满阱容量的基础上,着重讨论了最重要的光电二极管电容对满阱容量的影响,建立了满阱容量的计算模型。将测试结果与模型公式进行拟合,可以预估像素的满阱容量,指导像素设... 在分析光电二极管电容、浮空节点电容以及电荷转移效果这三方面影响满阱容量的基础上,着重讨论了最重要的光电二极管电容对满阱容量的影响,建立了满阱容量的计算模型。将测试结果与模型公式进行拟合,可以预估像素的满阱容量,指导像素设计。为了提高四管像素的满阱容量,提出在钳位光电二极管与浮空节点之间增加P型注入层稳定阱容量的方法。增加P型注入层可以大幅减小积分时间内光电二极管中储存的光生电子向浮空节点方向的泄漏,从而有效稳定阱容量。测试结果表明,在多种工艺条件下,像素的满阱容量从基本可以忽略提升至十万个电子的量级。 展开更多
关键词 微电子学与固体电子学 四管像素 满阱容量 CMOS图像传感器 光电二极管电容 防穿通注入
在线阅读 下载PDF
用于FPGA的多层次集成设计系统的设计与实现 被引量:6
19
作者 张峰 李艳 +13 位作者 韩小炜 李明 张倩莉 陈亮 吴利华 张国全 刘贵宅 郭旭峰 杨波 赵岩 王剑 李建忠 于芳 刘忠立 《深圳大学学报(理工版)》 EI CAS 北大核心 2012年第5期377-385,共9页
针对当前现场可编程门阵列(field programmable gate array,FPGA)领域,电子设计自动化(electronic design automation,EDA)工具集成度不够高、不具备用户自主设计FPGA芯片的功能等问题,设计并实现一套完整的FPGA多层次集成设计系统(vers... 针对当前现场可编程门阵列(field programmable gate array,FPGA)领域,电子设计自动化(electronic design automation,EDA)工具集成度不够高、不具备用户自主设计FPGA芯片的功能等问题,设计并实现一套完整的FPGA多层次集成设计系统(versatile design system,VDS).该系统包括高度集成的设计开发环境和FPGA芯片级到系统级的设计与验证工具,为设计、应用和验证自主研发的FPGA芯片提供了一个有效平台.VDS的显著特点在于提供了全自动芯片生成功能,使用户能根据自身需要灵活控制芯片的规模和功能,快速开发一系列的适应不同应用的FPGA.借助VDS成功设计出两款FPGA芯片,通过对FPGA进行电路设计以及对芯片和应用进行仿真与验证,证明了VDS的有效可行. 展开更多
关键词 微电子学 现场可编程门阵列 电子设计自动化 集成设计系统 用户图形界面 架构设计 版图设计 系统级设计 芯片仿真 芯片板级测试
在线阅读 下载PDF
微电子工艺模拟及器件分析的CA方法研究进展 被引量:1
20
作者 周再发 黄庆安 李伟华 《微电子学》 CAS CSCD 北大核心 2005年第6期618-623,630,共7页
综述了用于微电子工艺模拟和器件分析的元胞自动机(CA)方法的研究进展,分析了现有CA方法的优势,并比较了CA方法与其它方法的优缺点。在此基础上,展望了微电子工艺模拟及器件分析的CA方法的发展前景。对研究采用CA方法模拟微电子加工工... 综述了用于微电子工艺模拟和器件分析的元胞自动机(CA)方法的研究进展,分析了现有CA方法的优势,并比较了CA方法与其它方法的优缺点。在此基础上,展望了微电子工艺模拟及器件分析的CA方法的发展前景。对研究采用CA方法模拟微电子加工工艺和进行微电子器件分析具有参考意义。 展开更多
关键词 元胞自动机 微电子 工艺模拟 器件分析 电子器件
在线阅读 下载PDF
上一页 1 2 6 下一页 到第
使用帮助 返回顶部