UHP Mg-Ge alloys was recently found to provide excellent corrosion resistance.This paper provides new insights on the mechanism of improved corrosion resistance of UHP Mg-Ge alloys in Hanks’solution.The studied UHP M...UHP Mg-Ge alloys was recently found to provide excellent corrosion resistance.This paper provides new insights on the mechanism of improved corrosion resistance of UHP Mg-Ge alloys in Hanks’solution.The studied UHP Mg-0.5Ge and UHP Mg-1Ge alloys showed superior corrosion resistance compared to UHP Mg and WE43,with the Mg-1Ge exhibiting the best corrosion performance.The exceptional corrosion resistance of the UHP alloy is attributed to(i)Mg_(2)Ge’s ability to suppress cathodic kinetics,(ii)Ge’s capability to accelerate the formation of a highly passive layer,and the(iii)low amounts of corrosion-accelerating impurities.展开更多
Gallium nitride (GaN) and indium-gallium nitride (InxGa1-xN) thin films were directly grown on several non-single-crystalline substrates such as quartz glass and amorphous-carbon-coated graphite. The films were grown ...Gallium nitride (GaN) and indium-gallium nitride (InxGa1-xN) thin films were directly grown on several non-single-crystalline substrates such as quartz glass and amorphous-carbon-coated graphite. The films were grown by using a molecular beam epitaxy apparatus having single or dual nitrogen radio-frequency plasma cells, and in addition, germanium (Ge) or magnesium (Mg) doping to the films was also attempted. Crystallinity, photoluminescence (PL) property, and electrical property of the obtained films were investigated. Highly c-axis oriented GaN and InxGa1-xN thin films were obtained on the non-single-crystalline substrates. Near-band-edge emissions were observed in their PL spectra and the intensities were strongly enhanced by Ge doping. Ge doping was also effective on reducing resistivity of the GaN thin films grown on the non-single-crystalline substrates. Electrochemical capacitance-voltage measurements were carried out on the Mg-doped GaN thin films;and p-type conduction in the films was confirmed.展开更多
基金support of the Australian Research Council through the ARC Research Hub for Advanced Manufacturing of Medical Devices(IH150100024).J.Venezuela is also supported by the Advance Queensland Industry Research Fellowship(AQIRF114-2019RD2).
文摘UHP Mg-Ge alloys was recently found to provide excellent corrosion resistance.This paper provides new insights on the mechanism of improved corrosion resistance of UHP Mg-Ge alloys in Hanks’solution.The studied UHP Mg-0.5Ge and UHP Mg-1Ge alloys showed superior corrosion resistance compared to UHP Mg and WE43,with the Mg-1Ge exhibiting the best corrosion performance.The exceptional corrosion resistance of the UHP alloy is attributed to(i)Mg_(2)Ge’s ability to suppress cathodic kinetics,(ii)Ge’s capability to accelerate the formation of a highly passive layer,and the(iii)low amounts of corrosion-accelerating impurities.
文摘Gallium nitride (GaN) and indium-gallium nitride (InxGa1-xN) thin films were directly grown on several non-single-crystalline substrates such as quartz glass and amorphous-carbon-coated graphite. The films were grown by using a molecular beam epitaxy apparatus having single or dual nitrogen radio-frequency plasma cells, and in addition, germanium (Ge) or magnesium (Mg) doping to the films was also attempted. Crystallinity, photoluminescence (PL) property, and electrical property of the obtained films were investigated. Highly c-axis oriented GaN and InxGa1-xN thin films were obtained on the non-single-crystalline substrates. Near-band-edge emissions were observed in their PL spectra and the intensities were strongly enhanced by Ge doping. Ge doping was also effective on reducing resistivity of the GaN thin films grown on the non-single-crystalline substrates. Electrochemical capacitance-voltage measurements were carried out on the Mg-doped GaN thin films;and p-type conduction in the films was confirmed.
