This study presents dual-mode memory transistor that accommodates memory and synaptic operations utilizing photoinduced charge trapping at the interface between poly(1,4-butanediol diacrylate)(pBDDA)and Parylene diele...This study presents dual-mode memory transistor that accommodates memory and synaptic operations utilizing photoinduced charge trapping at the interface between poly(1,4-butanediol diacrylate)(pBDDA)and Parylene dielectric layer.Memory characteristics were implemented based on the photoresponsivity of dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene(DNTT),enabling instantaneous electron storage under combined optical and electrical inputs,with retention times up to 10,000 s.Meanwhile,synaptic characteristics were induced by gradual charge trapping via optical pulse stimulation.Synaptic plasticity was confirmed via the potentiation-depression curve,emulating key features of biological nervous system,namely short-term memory(STM)and long-term memory(LTM).Furthermore,the fingerprint recognition tasks highlighted identification and authentication abilities by incorporating our synaptic function into an artificial neural network(ANN).The dual-mode memory transistor,fabricated on a business card,showed excellent compatibility with flexible optoelectronics,maintaining stable memory and synaptic performance over 500 bending cycles with minimal changes in memory window,memory ratio,and potentiation-depression behavior.展开更多
Abstract In this study, a kind of fluorinated copolyfluorene, named poly[（4-（octyloxy）-9,9-diphenylfluorene-2,7-diyl）-alt- （2,3,5,6-tetrafluoro-1,4-phenylene）] （PODPF-TFP）, is synthesized by facile palladium-b...Abstract In this study, a kind of fluorinated copolyfluorene, named poly[（4-（octyloxy）-9,9-diphenylfluorene-2,7-diyl）-alt- （2,3,5,6-tetrafluoro-1,4-phenylene）] （PODPF-TFP）, is synthesized by facile palladium-based direct aromatization. Compared to the non-fluorinated counterpart, poly[（4-（octyloxy）-9,9-diphenylfluorene-2,7-diyl）-alt-（p-phenylene）] （PODPF-P）, deeper HOMO/LUMO energy level combined with steric hindrance effect endow PODPF-TFP with excellent spectra and morphology stability. Finally, organic field-effect transistor （OFET） memory devices are fabricated with PODPF-P/PODPF- TFP as the dielectric layers, and they both exhibit flash type storage characteristic. Owing to the electronegativity of fluorine atom, the device based on PODPF-TFP exhibits larger memory window and more stable Ion/Ioff ratio during a retention time of 10^4 s as well as a better aging stability. The present study suggests that fluorinated p-n copolyfluorene electrets could enhance the capabilities of charge trapping and storage, which are promising for OFET memory devices.展开更多
Driven by important megatrends such as cloud computing,artificial intelligence,and the Internet of Things,as a device used to store programs and data in computing systems,memory is struggling to catch up with the expl...Driven by important megatrends such as cloud computing,artificial intelligence,and the Internet of Things,as a device used to store programs and data in computing systems,memory is struggling to catch up with the explosive growth of data and bandwidth requirements in the system.However,the storage wair between non-volatile memory and volatile memory retards the further improvement of modern memory computing systems.Herein,a quasi-volatile transistor memory based on organic polymer/perovskite quantum dot blend was fabricated using the vertical transistor configuration.Contributing to vertical structure and appropriate doping ratio of blend film,the quasi-volatile memory device displayed 1,560 times longer data retention time(>100 s)with respect to the dynamic random access memory and fast data programming speed(20 ps)in which was far more quickly than that of other organic non-volatile memories to fill the gap between volatile and non-volatile memories.Moreover,the device retention characteristics could be further promoted under the photoelectric synergistic stimulation,which also provided the possibility to reduce electric writing condition.Furthermore,the quasi-volatile memory device showed good electrical performance under bending conditions.This work provides a simple solution to fabricate multi-level quasi-volatile memory,which opens up a whole new avenue of"universal memory"and lays a solid foundation for low power and flexible random access memory devices.展开更多
OFET-type optical memories using light bias as the fourth terminal enable low voltage electrical stresses to suffice in generating substantial memory window and photoassisted multibit storage.The undefined molecular s...OFET-type optical memories using light bias as the fourth terminal enable low voltage electrical stresses to suffice in generating substantial memory window and photoassisted multibit storage.The undefined molecular structure and trapping mechanism of most storage media limit their practical applications.Herein,we report a series of charge trapping materials with the rigid and planar conjugated structure of benzo[1,2-b:4,5-b’]dithiophene(BDT)acting as the charge trapping site and photoresponsive group,while the insulated(triisopropylsilyl)acetylene(TIPS)unit is introduced to prevent the leakage path of the charge.The pentacene-based OFET memory with solution-processing TTIPS-BDT shows fast trapping speed,tunable ambipolar memory,large memory window and reliable charge retention,which is obviously improved compare to the performance of BDT and DTIPS-BDT devices.In addition,the charge trapping,memory characteristics and photoresponsive behaviors are also discussed in detail.The TTIPS-BDT device shows a specific response to green light illumination.This study suggests that BDT derivatives serving as charge trapping elements possess potential applications in future photoresponsive memory and plastic electronics.展开更多
Field-effect transistors based on ferroelectrics have attracted intensive interests, because of their non-volatile data retention, rewritability, and non-destructive read-out. In particular, polymeric materials that p...Field-effect transistors based on ferroelectrics have attracted intensive interests, because of their non-volatile data retention, rewritability, and non-destructive read-out. In particular, polymeric materials that possess ferroelectric properties are promising for the fabrications of memory devices with high performance, low cost, and large-area manufacturing, by virtue of their good solubility, low-temperature processability, and good chemical stability. In this review, we discuss the material characteristics of ferroelectric polymers, providing an update on the current development of ferroelectric field-effect transistors（Fe-FETs） in non-volatile memory applications.展开更多
基金supported by the National Research Foundation of Korea(NRF)grant funded by the Korean Government(MSIT)(RS-2023-00210194,RS-2024-00438999,RS-2024-00442020,RS-2024-00454508)supported by Institute of Information&communications Technology Planning&Evaluation(IITP)under the artificial intelligence semiconductor support program to nurture the best talents(IITP-(2025)-RS-2023-00253914)grant funded by the Korea government(MSIT)and the research fund of Hanyang University(HY-2024-2696).
文摘This study presents dual-mode memory transistor that accommodates memory and synaptic operations utilizing photoinduced charge trapping at the interface between poly(1,4-butanediol diacrylate)(pBDDA)and Parylene dielectric layer.Memory characteristics were implemented based on the photoresponsivity of dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene(DNTT),enabling instantaneous electron storage under combined optical and electrical inputs,with retention times up to 10,000 s.Meanwhile,synaptic characteristics were induced by gradual charge trapping via optical pulse stimulation.Synaptic plasticity was confirmed via the potentiation-depression curve,emulating key features of biological nervous system,namely short-term memory(STM)and long-term memory(LTM).Furthermore,the fingerprint recognition tasks highlighted identification and authentication abilities by incorporating our synaptic function into an artificial neural network(ANN).The dual-mode memory transistor,fabricated on a business card,showed excellent compatibility with flexible optoelectronics,maintaining stable memory and synaptic performance over 500 bending cycles with minimal changes in memory window,memory ratio,and potentiation-depression behavior.
基金financially supported by the National Natural Science Funds for Excellent Young Scholar (No.21322402)the National Natural Science Foundation of China (Nos.21274064, 61475074, 21504041 and 61136003)+4 种基金University of Jiangsu Province Natural Science Foundation Project (No.14KJB510027)Natural Science Foundation of Jiangsu Province (No.BM2012010)Synergetic Innovation Center for Organic Electronics and Information DisplaysNatural Science of the Education Committee of Jiangsu Province (No.15KJB430019)Jiangsu Planned Projects for Postdoctoral Research Funds (No.1501019B)
文摘Abstract In this study, a kind of fluorinated copolyfluorene, named poly[（4-（octyloxy）-9,9-diphenylfluorene-2,7-diyl）-alt- （2,3,5,6-tetrafluoro-1,4-phenylene）] （PODPF-TFP）, is synthesized by facile palladium-based direct aromatization. Compared to the non-fluorinated counterpart, poly[（4-（octyloxy）-9,9-diphenylfluorene-2,7-diyl）-alt-（p-phenylene）] （PODPF-P）, deeper HOMO/LUMO energy level combined with steric hindrance effect endow PODPF-TFP with excellent spectra and morphology stability. Finally, organic field-effect transistor （OFET） memory devices are fabricated with PODPF-P/PODPF- TFP as the dielectric layers, and they both exhibit flash type storage characteristic. Owing to the electronegativity of fluorine atom, the device based on PODPF-TFP exhibits larger memory window and more stable Ion/Ioff ratio during a retention time of 10^4 s as well as a better aging stability. The present study suggests that fluorinated p-n copolyfluorene electrets could enhance the capabilities of charge trapping and storage, which are promising for OFET memory devices.
基金the National Natural Science Foundation of China(No.61974029)Natural Science Foundation for Distinguished Young Scholars of Fujian Province(No.2020J06012).
文摘Driven by important megatrends such as cloud computing,artificial intelligence,and the Internet of Things,as a device used to store programs and data in computing systems,memory is struggling to catch up with the explosive growth of data and bandwidth requirements in the system.However,the storage wair between non-volatile memory and volatile memory retards the further improvement of modern memory computing systems.Herein,a quasi-volatile transistor memory based on organic polymer/perovskite quantum dot blend was fabricated using the vertical transistor configuration.Contributing to vertical structure and appropriate doping ratio of blend film,the quasi-volatile memory device displayed 1,560 times longer data retention time(>100 s)with respect to the dynamic random access memory and fast data programming speed(20 ps)in which was far more quickly than that of other organic non-volatile memories to fill the gap between volatile and non-volatile memories.Moreover,the device retention characteristics could be further promoted under the photoelectric synergistic stimulation,which also provided the possibility to reduce electric writing condition.Furthermore,the quasi-volatile memory device showed good electrical performance under bending conditions.This work provides a simple solution to fabricate multi-level quasi-volatile memory,which opens up a whole new avenue of"universal memory"and lays a solid foundation for low power and flexible random access memory devices.
基金supported by the National Natural Science Foundation of China(62288102,51933005,61604081)the National Key R&D Program of China(2024YFB3612600)+1 种基金the Basic Research Program of Jiangsu(BK20240033)the Natural Science Foundation Project of Jilin Province(20230101294JC).
文摘OFET-type optical memories using light bias as the fourth terminal enable low voltage electrical stresses to suffice in generating substantial memory window and photoassisted multibit storage.The undefined molecular structure and trapping mechanism of most storage media limit their practical applications.Herein,we report a series of charge trapping materials with the rigid and planar conjugated structure of benzo[1,2-b:4,5-b’]dithiophene(BDT)acting as the charge trapping site and photoresponsive group,while the insulated(triisopropylsilyl)acetylene(TIPS)unit is introduced to prevent the leakage path of the charge.The pentacene-based OFET memory with solution-processing TTIPS-BDT shows fast trapping speed,tunable ambipolar memory,large memory window and reliable charge retention,which is obviously improved compare to the performance of BDT and DTIPS-BDT devices.In addition,the charge trapping,memory characteristics and photoresponsive behaviors are also discussed in detail.The TTIPS-BDT device shows a specific response to green light illumination.This study suggests that BDT derivatives serving as charge trapping elements possess potential applications in future photoresponsive memory and plastic electronics.
基金Program supported partially by the NSFC(Nos.61574074,61774080)NSFJS(No.BK20170075)the Open Partnership Joint Projects of NSFC–JSPS Bilateral Joint Research Projects(No.61511140098)
文摘Field-effect transistors based on ferroelectrics have attracted intensive interests, because of their non-volatile data retention, rewritability, and non-destructive read-out. In particular, polymeric materials that possess ferroelectric properties are promising for the fabrications of memory devices with high performance, low cost, and large-area manufacturing, by virtue of their good solubility, low-temperature processability, and good chemical stability. In this review, we discuss the material characteristics of ferroelectric polymers, providing an update on the current development of ferroelectric field-effect transistors（Fe-FETs） in non-volatile memory applications.
