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The Influence of Behavioral Lifestyle Factors on Recent Episodic Memory Retention Capacity in Young-Old Adults:An Empirical Investigation Leveraging the 2022 Wave Data from the China Family Panel Studies(CFPS)
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作者 Yun Xu Pu Ge Qiyu Li 《Asia Pacific Journal of Clinical Medical Research》 2025年第3期18-29,共12页
Objective:This study aimed to examine the influence of behavioral lifestyle factors on recent episodic memory retention capacity among young-old adults(aged 60-69 years)in China.The findings provide scientific evidenc... Objective:This study aimed to examine the influence of behavioral lifestyle factors on recent episodic memory retention capacity among young-old adults(aged 60-69 years)in China.The findings provide scientific evidence to inform proactive strategies to mitigate cognitive decline risk within China’s rapidly aging population.Methods:Utilizing data from the 2022 wave of the China Family Panel Studies(CFPS),a total of 2,772 adults aged 60-69 were included in the analytical sample.Recent episodic memory retention capacity(scored 0-5 points,based on self-reported assessment)served as the dependent variable.Six categories of behavioral lifestyle indicators(including exercise frequency,sleep quality,dietary patterns,etc.)were analyzed as independent variables.Associations were assessed using multivariate ordinal logistic regression models,controlling for relevant covariates.Results:Self-reported potential impairment in recent episodic memory was identified by 47.19%of respondents.Multivariate analysis revealed significant associations between behavioral lifestyle factors and memory retention capacity.Regular exercise(OR=1.297,95%CI:1.118-1.504),meat consumption(OR=1.765,95%CI:1.393-2.237),regular reading habits(OR=1.599,95%CI:1.283-1.992),and internet use(OR=1.413,95%CI:1.217-1.641)emerged as significant protective factors.Abnormal sleep duration was detrimentally associated with retention capacity(too short:OR=0.728,95%CI:0.591-0.897;too long:OR=0.810,95%CI:0.670-0.980).Significant associations were also observed for control variables:urban residence(OR=1.270,95%CI:1.100-1.467),high school education or above(OR=1.543,95%CI:1.293-1.841),and better self-rated health status(OR=1.156,95%CI:1.089-1.227)were positively correlated with better memory retention.Conclusions:Optimal sleep duration,regular physical exercise,meat intake,habitual reading,and internet engagement positively predict self-assessed recent episodic memory retention capacity in Chinese young-old adults.These findings underscore the potential for multi-faceted lifestyle interventions to enhance cog-nitive health in aging populations.Specifically,strategies should encompass community-based sleep hygiene management,tailored nutritional interventions(especially promoting adequate protein sources like meat),enhanced digital literacy and internet accessibility programs,and the promotion of age-appropriate physical activity initiatives.Furthermore,implementing culturally responsive strategies adapted to urban-rural contexts-such as deploying“mobile cognitive health units”in rural areas and fostering digital reading platforms in urban settings-is recommended to optimize intervention effectiveness. 展开更多
关键词 Young-Old Adults Behavioral Lifestyle Factors Episodic memory retention Cognitive Health Promotion Aging Population Cognitive Aging China Family Panel Studies(CFPS)
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BE-SONOS flash memory along with metal gate and high-k dielectrics in tunnel barrier and its impact on charge retention dynamics
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作者 Sonal Jain Deepika Gupta +1 位作者 Vaibhav Neema Santosh Vishwakarma 《Journal of Semiconductors》 EI CAS CSCD 2016年第3期42-47,共6页
We investigate the effect of a high-k dielectric in the tunnel layer to improve the erase speed-retention trade-off. Here, the proposed stack in the tunnel layer is AlLaO_3/Hf AlO/SiO_2. These proposed materials posse... We investigate the effect of a high-k dielectric in the tunnel layer to improve the erase speed-retention trade-off. Here, the proposed stack in the tunnel layer is AlLaO_3/Hf AlO/SiO_2. These proposed materials possess low valence band offset with high permittivity to improve both the erase speed and retention time in barrier engineered silicon-oxide-nitride-oxide-silicon(BE-SONOS). In the proposed structure Hf Al O and AlLaO_3 replace Si_3N_4 and the top SiO_2 layer in a conventional oxide/nitride/oxide(ONO) tunnel stack. Due to the lower conduction band offset(CBO) and high permittivity of the proposed material in the tunnel layer, it offers better program/erase(P/E) speed and retention time. In this work the gate length is also scaled down from 220 to 55 nm to observe the effect of high-k materials while scaling, for the same equivalent oxide thickness(EOT). We found that the scaling down of the gate length has a negligible impact on the memory window of the devices. Hence, various investigated tunnel oxide stacks possess a good memory window with a charge retained up to 87.4%(at room temperature) after a period of ten years. We also examine the use of a metal gate instead of a polysilicon gate, which shows improved P/E speed and retention time. 展开更多
关键词 high-k dielectric materials nonvolatile memory tunnel barrier retention endurance and bandgapengineered
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