With the rapid development of electronic information engineering,high-speed digital circuits have been increasingly widely applied in various fields.In high-speed digital circuits,signal integrity is prone to interfer...With the rapid development of electronic information engineering,high-speed digital circuits have been increasingly widely applied in various fields.In high-speed digital circuits,signal integrity is prone to interference from various external factors,leading to issues such as signal distortion or degradation of system performance.Based on this,this paper conducts research on the optimization strategies for signal integrity of high-speed digital circuits in electronic information engineering.It deeply analyzes the importance of high-speed digital circuits,elaborates on the challenges they face and the specific manifestations of signal integrity issues,and proposes a series of optimization strategies in electronic information engineering.The aim is to improve the signal integrity of highspeed digital circuits and provide theoretical support and practical guidance for the development of related fields.展开更多
Classical computation of electronic properties in large-scale materials remains challenging.Quantum computation has the potential to offer advantages in memory footprint and computational scaling.However,general and v...Classical computation of electronic properties in large-scale materials remains challenging.Quantum computation has the potential to offer advantages in memory footprint and computational scaling.However,general and viable quantum algorithms for simulating large-scale materials are still limited.We propose and implement random-state quantum algorithms to calculate electronic-structure properties of real materials.Using a random state circuit on a small number of qubits,we employ real-time evolution with first-order Trotter decomposition and Hadamard test to obtain electronic density of states,and we develop a modified quantum phase estimation algorithm to calculate real-space local density of states via direct quantum measurements.Furthermore,we validate these algorithms by numerically computing the density of states and spatial distributions of electronic states in graphene,twisted bilayer graphene quasicrystals,and fractal lattices,covering system sizes from hundreds to thousands of atoms.Our results manifest that the random-state quantum algorithms provide a general and qubit-efficient route to scalable simulations of electronic properties in large-scale periodic and aperiodic materials.展开更多
Recent progress of research for graphene applications in electronic and optoelectronic devices is reviewed, and recent developments in circuits based on graphene devices are summarized. The bandgap-mobility tradeoff i...Recent progress of research for graphene applications in electronic and optoelectronic devices is reviewed, and recent developments in circuits based on graphene devices are summarized. The bandgap-mobility tradeoff inevitably constrains the application of graphene for the conventional field-effect transistor （FET） devices in digital applications. However, this shortcoming has not dampened the enthusiasm of the research community toward graphene electronics. Aside from high mobility, graphene offers numerous other amazing electrical, optical, thermal, and mechanical properties that continually motivate innovations.展开更多
In the field of energy conversion,the increasing attention on power electronic equipment is fault detection and diagnosis.A power electronic circuit is an essential part of a power electronic system.The state of its i...In the field of energy conversion,the increasing attention on power electronic equipment is fault detection and diagnosis.A power electronic circuit is an essential part of a power electronic system.The state of its internal components affects the performance of the system.The stability and reliability of an energy system can be improved by studying the fault diagnosis of power electronic circuits.Therefore,an algorithm based on adaptive simulated annealing particle swarm optimization(ASAPSO)was used in the present study to optimize a backpropagation(BP)neural network employed for the online fault diagnosis of a power electronic circuit.We built a circuit simulation model in MATLAB to obtain its DC output voltage.Using Fourier analysis,we extracted fault features.These were normalized as training samples and input to an unoptimized BP neural network and BP neural networks optimized by particle swarm optimization(PSO)and the ASAPSO algorithm.The accuracy of fault diagnosis was compared for the three networks.The simulation results demonstrate that a BP neural network optimized with the ASAPSO algorithm has higher fault diagnosis accuracy,better reliability,and adaptability and can more effectively diagnose and locate faults in power electronic circuits.展开更多
This research concerns on (TID), (DD) and (SEE) effects also high energy particles’ effects on electronic properties of silicon. It investigates the silicon electronic properties exposed to these particles using a la...This research concerns on (TID), (DD) and (SEE) effects also high energy particles’ effects on electronic properties of silicon. It investigates the silicon electronic properties exposed to these particles using a laboratory neutron radiation sources. Some Pieces of a silicon wafer were under neutron radiation at different times and the electrical properties of each one was illustrated by plate resistance measurement and also the strength of the current voltage was simulated by Fluka and MCNP software. Based on these results, authorized limit of silicon tolerance was obtained against high energy neutrons radiation. We put them in the electric furnace under thermal recovery to overcome the unusual behavior of irradiated samples.展开更多
The (DC-GDPAU) is a DC glow discharge plasma experiment that was designed, established, and operated in the Physics Department at Ain Shams University (Egypt). The aim of this experiment is to study and improve some p...The (DC-GDPAU) is a DC glow discharge plasma experiment that was designed, established, and operated in the Physics Department at Ain Shams University (Egypt). The aim of this experiment is to study and improve some properties of a printed circuit board (PCB) by exposing it to the plasma. The device consists of cylindrical discharge chamber with movable parallel circular copper electrodes (cathode and anode) fixed inside it. The distance between them is 12 cm. This plasma experiment works in a low-pressure range (0.15 - 0.70 Torr) for Ar gas with a maximum DC power supply of 200 W. The Paschen curves and electrical plasma parameters (current, volt, power, resistance) characterized to the plasma have been measured and calculated at each cm between the two electrodes. Besides, the electron temperature and ion density are obtained at different radial distances using a double Langmuir probe. The electron temperature (<em>KT<sub>e</sub></em>) was kept stable in range 6.58 to 10.44 eV;whereas the ion density (<em>ni</em>) was in range from 0.91 × 10<sup>10</sup> cm<sup><span style="white-space:nowrap;">−</span>3</sup> to 1.79 × 10<sup>10</sup> cm<sup><span style="white-space:nowrap;">−</span>3</sup>. A digital optical microscope (800×) was employed to draw a comparison between the pre-and after effect of exposure to plasma on the shaping of the circuit layout. The experimental results show that the electrical conductivity increased after plasma exposure, also an improvement in the adhesion force in the Cu foil surface. A significant increase in the conductivity can be directly related to the position of the sample surfaces as well as to the time of exposure. This shows the importance of the obtained results in developing the PCBs manufacturing that uses in different microelectronics devices like those onboard of space vehicles.展开更多
Carbon Nanotubes(CNT)in nanotechnology field are legendary for its strength and chemical inertness.Technically,we can alter carbon nanotubes based on our necessities and requirements such as single layered nanotube,do...Carbon Nanotubes(CNT)in nanotechnology field are legendary for its strength and chemical inertness.Technically,we can alter carbon nanotubes based on our necessities and requirements such as single layered nanotube,double layered nanotube,multi layered nanotube etc.In this paper usage of carbon nanotubes in semiconductor devices such as nanomaterials,molecular dynamics of nanomaterials,heterojunctions using carbon nanotubes,diodes and Graphene Field Effect Transistor(GFET),its characteristics and data analysis are discussed.The major application of carbon nanotubes in electronic circuits is not limiting to improves the electrical and thermal conductivity due to its high stretchability feature and they also have a long life span and better durability over traditional electronic circuit’s materials.展开更多
In this paper, two new electronically tunable filter configurations are proposed. The proposed filters operate current-mode (CM), voltage-mode (VM), transimpedance-mode (TIM) and transadmittance-mode (TAM). The first ...In this paper, two new electronically tunable filter configurations are proposed. The proposed filters operate current-mode (CM), voltage-mode (VM), transimpedance-mode (TIM) and transadmittance-mode (TAM). The first configuration realizes second-order VM band-pass and TAM high-pass filter characteristics from the same configuration. The second one realizes second-order TIM band-pass and CM low-pass filter characteristics from the same configuration. They also use minimum number of electronic components (two capacitors and one active component namely;current controlled current difference transconductance amplifier). The workability of the proposed structures has been demonstrated by simulation results.展开更多
With the rapid development of Internet technology,the application of electronic circuit simulation technology is more and more extensive,and now it has been applied to integrated circuit design.Because the electronic ...With the rapid development of Internet technology,the application of electronic circuit simulation technology is more and more extensive,and now it has been applied to integrated circuit design.Because the electronic circuit simulation technology has high efficiency,flexible and simple application,as well as stable performance,it has shown more and more good application prospects in integrated circuit design.Based on the strong development trend of electronic circuit simulation technology,it will be more and more widely used in daily life in the future,so the research on electronic circuit simulation technology is more and more in-depth.In this paper,the application of electronic circuit technology in integrated circuit design is studied,hoping that the technology can provide a more concise and efficient research and development way for electronic applications.展开更多
Recent advances in two-dimensional layered systems have greatly enriched electronic transport studies, particularly in inter-layer Coulomb drag research. Here, systematic transport measurements were conducted in graph...Recent advances in two-dimensional layered systems have greatly enriched electronic transport studies, particularly in inter-layer Coulomb drag research. Here, systematic transport measurements were conducted in graphene-based electronic double-layer structures, revealing giant yet reproducible drag fluctuations at cryogenic temperatures. These fluctuations' characteristics, including amplitude and peak/valley spacing, are mainly determined by the drag layer's carrier dynamics rather than the drive layer's, resulting in violation of the Onsager reciprocity relation. Notably, the drag fluctuations remain observable up to 35 K, far exceeding universal conductance fluctuations within individual layers. This suggests enhanced phase coherence in inter-layer drag compared to single-layer transport, as further confirmed by quantitative analysis of auto-correlation fields of fluctuations under magnetic fields. Our findings provide new insights into quantum interference effects and their interplay with Coulomb interactions in solids. The observations of significant drag fluctuations could potentially help address chaotic signals between nearby components in nanoscale devices.展开更多
Half-semimetals,characterized by their spin-polarized electronic states,hold significant promise for spintronic applications but remain scarce due to stringent electronic and magnetic criteria.Through a combination of...Half-semimetals,characterized by their spin-polarized electronic states,hold significant promise for spintronic applications but remain scarce due to stringent electronic and magnetic criteria.Through a combination of transport measurements and optical spectroscopy,we investigated the intermetallic compound Mn_(4)Al_(11),which features an exceptionally low carrier concentration and undergoes a magnetic phase transition near 68 K.Transport measurements reveal anomalies that deviate from typical metallic behavior at low temperatures.Optical spectroscopy indicates a small,nearly frequency-independent optical conductivity in the far-infrared region,with spectral weight decreasing as the temperature drops from 300 K to 50 K.These behaviors suggest a temperaturedependent carrier density and significant scattering of charge carriers.Combining experimental findings with calculated electronic band structures,we propose that Mn_(4)Al_(11) is a novel half-semimetal candidate exhibiting a ferrimagnetic ground state.展开更多
Rapid technological advancements drive miniaturization and high energy density in devices,thereby increasing nanoscale thermal management demands and urging development of higher spatial resolution technologies for th...Rapid technological advancements drive miniaturization and high energy density in devices,thereby increasing nanoscale thermal management demands and urging development of higher spatial resolution technologies for thermal imaging and transport research.Here,we introduce an approach to measure nanoscale thermal resistance using in situ inelastic scanning transmission electron microscopy.By constructing unidirectional heating flux with controlled temperature gradients and analyzing electron energy-loss/gain signals under optimized acquisition conditions,nanometer-resolution in mapping phonon apparent temperature is achieved.Thus,interfacial thermal resistance is determined by calculating the ratio of interfacial temperature difference to bulk temperature gradient.This methodology enables direct measurement of thermal transport properties for atomic-scale structural features(e.g.,defects and heterointerfaces),resolving critical structure-performance relationships,providing a useful tool for investigating thermal phenomena at the(sub-)nanoscale.展开更多
This paper presents the study and application of the electronic device anti-interference techniques underhigh voltage and/or heavy current electro-magnetic circumstance in power system.[
Three dimensional（3D） displacements, which can be translated further into 3D strain, are key parameters tor design, manufacturing and quality control. Using different optical setups, phase-shift methods, and algorit...Three dimensional（3D） displacements, which can be translated further into 3D strain, are key parameters tor design, manufacturing and quality control. Using different optical setups, phase-shift methods, and algorithms, several different 3D electronic speckle pattern interferometry（ESPl） systems for displacement and strain measurements have been achieved and commercialized. This paper provides a review of the recent developments in ESPI systems for 3D displacement and strain measurement. After an overview of the fundamentals of ESP! theory, temporal phase-shift, and spatial phase-shift techniques, 3D deformation measurements by the temporal phase-shift ESPI system, which is suited well for static measurement, and by the spatial phase-shift ESPI system, which is particularly useful for dynamic measurement, are discussed. For each method, the basic theory, a brief derivation and different optical layouts are presented. The state of art application, potential and limitation of the ESPI systems are shown and demonstrated.展开更多
文摘With the rapid development of electronic information engineering,high-speed digital circuits have been increasingly widely applied in various fields.In high-speed digital circuits,signal integrity is prone to interference from various external factors,leading to issues such as signal distortion or degradation of system performance.Based on this,this paper conducts research on the optimization strategies for signal integrity of high-speed digital circuits in electronic information engineering.It deeply analyzes the importance of high-speed digital circuits,elaborates on the challenges they face and the specific manifestations of signal integrity issues,and proposes a series of optimization strategies in electronic information engineering.The aim is to improve the signal integrity of highspeed digital circuits and provide theoretical support and practical guidance for the development of related fields.
基金supported by the Major Project for the Integration of ScienceEducation and Industry (Grant No.2025ZDZX02)。
文摘Classical computation of electronic properties in large-scale materials remains challenging.Quantum computation has the potential to offer advantages in memory footprint and computational scaling.However,general and viable quantum algorithms for simulating large-scale materials are still limited.We propose and implement random-state quantum algorithms to calculate electronic-structure properties of real materials.Using a random state circuit on a small number of qubits,we employ real-time evolution with first-order Trotter decomposition and Hadamard test to obtain electronic density of states,and we develop a modified quantum phase estimation algorithm to calculate real-space local density of states via direct quantum measurements.Furthermore,we validate these algorithms by numerically computing the density of states and spatial distributions of electronic states in graphene,twisted bilayer graphene quasicrystals,and fractal lattices,covering system sizes from hundreds to thousands of atoms.Our results manifest that the random-state quantum algorithms provide a general and qubit-efficient route to scalable simulations of electronic properties in large-scale periodic and aperiodic materials.
文摘Recent progress of research for graphene applications in electronic and optoelectronic devices is reviewed, and recent developments in circuits based on graphene devices are summarized. The bandgap-mobility tradeoff inevitably constrains the application of graphene for the conventional field-effect transistor （FET） devices in digital applications. However, this shortcoming has not dampened the enthusiasm of the research community toward graphene electronics. Aside from high mobility, graphene offers numerous other amazing electrical, optical, thermal, and mechanical properties that continually motivate innovations.
基金supported by the 2022 Project for Improving the Basic Research Ability of Young and Middle-aged Teachers in Guangxi Universities(Grant No.2022KY0209).
文摘In the field of energy conversion,the increasing attention on power electronic equipment is fault detection and diagnosis.A power electronic circuit is an essential part of a power electronic system.The state of its internal components affects the performance of the system.The stability and reliability of an energy system can be improved by studying the fault diagnosis of power electronic circuits.Therefore,an algorithm based on adaptive simulated annealing particle swarm optimization(ASAPSO)was used in the present study to optimize a backpropagation(BP)neural network employed for the online fault diagnosis of a power electronic circuit.We built a circuit simulation model in MATLAB to obtain its DC output voltage.Using Fourier analysis,we extracted fault features.These were normalized as training samples and input to an unoptimized BP neural network and BP neural networks optimized by particle swarm optimization(PSO)and the ASAPSO algorithm.The accuracy of fault diagnosis was compared for the three networks.The simulation results demonstrate that a BP neural network optimized with the ASAPSO algorithm has higher fault diagnosis accuracy,better reliability,and adaptability and can more effectively diagnose and locate faults in power electronic circuits.
文摘This research concerns on (TID), (DD) and (SEE) effects also high energy particles’ effects on electronic properties of silicon. It investigates the silicon electronic properties exposed to these particles using a laboratory neutron radiation sources. Some Pieces of a silicon wafer were under neutron radiation at different times and the electrical properties of each one was illustrated by plate resistance measurement and also the strength of the current voltage was simulated by Fluka and MCNP software. Based on these results, authorized limit of silicon tolerance was obtained against high energy neutrons radiation. We put them in the electric furnace under thermal recovery to overcome the unusual behavior of irradiated samples.
文摘The (DC-GDPAU) is a DC glow discharge plasma experiment that was designed, established, and operated in the Physics Department at Ain Shams University (Egypt). The aim of this experiment is to study and improve some properties of a printed circuit board (PCB) by exposing it to the plasma. The device consists of cylindrical discharge chamber with movable parallel circular copper electrodes (cathode and anode) fixed inside it. The distance between them is 12 cm. This plasma experiment works in a low-pressure range (0.15 - 0.70 Torr) for Ar gas with a maximum DC power supply of 200 W. The Paschen curves and electrical plasma parameters (current, volt, power, resistance) characterized to the plasma have been measured and calculated at each cm between the two electrodes. Besides, the electron temperature and ion density are obtained at different radial distances using a double Langmuir probe. The electron temperature (<em>KT<sub>e</sub></em>) was kept stable in range 6.58 to 10.44 eV;whereas the ion density (<em>ni</em>) was in range from 0.91 × 10<sup>10</sup> cm<sup><span style="white-space:nowrap;">−</span>3</sup> to 1.79 × 10<sup>10</sup> cm<sup><span style="white-space:nowrap;">−</span>3</sup>. A digital optical microscope (800×) was employed to draw a comparison between the pre-and after effect of exposure to plasma on the shaping of the circuit layout. The experimental results show that the electrical conductivity increased after plasma exposure, also an improvement in the adhesion force in the Cu foil surface. A significant increase in the conductivity can be directly related to the position of the sample surfaces as well as to the time of exposure. This shows the importance of the obtained results in developing the PCBs manufacturing that uses in different microelectronics devices like those onboard of space vehicles.
文摘Carbon Nanotubes(CNT)in nanotechnology field are legendary for its strength and chemical inertness.Technically,we can alter carbon nanotubes based on our necessities and requirements such as single layered nanotube,double layered nanotube,multi layered nanotube etc.In this paper usage of carbon nanotubes in semiconductor devices such as nanomaterials,molecular dynamics of nanomaterials,heterojunctions using carbon nanotubes,diodes and Graphene Field Effect Transistor(GFET),its characteristics and data analysis are discussed.The major application of carbon nanotubes in electronic circuits is not limiting to improves the electrical and thermal conductivity due to its high stretchability feature and they also have a long life span and better durability over traditional electronic circuit’s materials.
文摘In this paper, two new electronically tunable filter configurations are proposed. The proposed filters operate current-mode (CM), voltage-mode (VM), transimpedance-mode (TIM) and transadmittance-mode (TAM). The first configuration realizes second-order VM band-pass and TAM high-pass filter characteristics from the same configuration. The second one realizes second-order TIM band-pass and CM low-pass filter characteristics from the same configuration. They also use minimum number of electronic components (two capacitors and one active component namely;current controlled current difference transconductance amplifier). The workability of the proposed structures has been demonstrated by simulation results.
文摘With the rapid development of Internet technology,the application of electronic circuit simulation technology is more and more extensive,and now it has been applied to integrated circuit design.Because the electronic circuit simulation technology has high efficiency,flexible and simple application,as well as stable performance,it has shown more and more good application prospects in integrated circuit design.Based on the strong development trend of electronic circuit simulation technology,it will be more and more widely used in daily life in the future,so the research on electronic circuit simulation technology is more and more in-depth.In this paper,the application of electronic circuit technology in integrated circuit design is studied,hoping that the technology can provide a more concise and efficient research and development way for electronic applications.
基金supported by the National Natural Science Foundation of China (Grant Nos.12474051 and 92165201)the Chinese Academy of Sciences Project for Young Scientists in Basic Research (Grant No.YSBR-046)+1 种基金the National Key Research and Development Program of China (Grant No.2023YFA1406300)the Anhui Provincial Natural Science Foundation (Grant Nos.2308085J11 and2308085QA14)。
文摘Recent advances in two-dimensional layered systems have greatly enriched electronic transport studies, particularly in inter-layer Coulomb drag research. Here, systematic transport measurements were conducted in graphene-based electronic double-layer structures, revealing giant yet reproducible drag fluctuations at cryogenic temperatures. These fluctuations' characteristics, including amplitude and peak/valley spacing, are mainly determined by the drag layer's carrier dynamics rather than the drive layer's, resulting in violation of the Onsager reciprocity relation. Notably, the drag fluctuations remain observable up to 35 K, far exceeding universal conductance fluctuations within individual layers. This suggests enhanced phase coherence in inter-layer drag compared to single-layer transport, as further confirmed by quantitative analysis of auto-correlation fields of fluctuations under magnetic fields. Our findings provide new insights into quantum interference effects and their interplay with Coulomb interactions in solids. The observations of significant drag fluctuations could potentially help address chaotic signals between nearby components in nanoscale devices.
基金supported by the National Natural Science Foundation of China(Grant Nos.12274033 and 12488201)the National Key Research and Development Program of China(Grant Nos.2022YFA1403901 and 2024YFA1408700)。
文摘Half-semimetals,characterized by their spin-polarized electronic states,hold significant promise for spintronic applications but remain scarce due to stringent electronic and magnetic criteria.Through a combination of transport measurements and optical spectroscopy,we investigated the intermetallic compound Mn_(4)Al_(11),which features an exceptionally low carrier concentration and undergoes a magnetic phase transition near 68 K.Transport measurements reveal anomalies that deviate from typical metallic behavior at low temperatures.Optical spectroscopy indicates a small,nearly frequency-independent optical conductivity in the far-infrared region,with spectral weight decreasing as the temperature drops from 300 K to 50 K.These behaviors suggest a temperaturedependent carrier density and significant scattering of charge carriers.Combining experimental findings with calculated electronic band structures,we propose that Mn_(4)Al_(11) is a novel half-semimetal candidate exhibiting a ferrimagnetic ground state.
基金supported by the National Natural Science Foundation of China(Grant No.52125307)the National Key R&D Program of China(Grant No.2021YFB3501500)the support from the New Cornerstone Science Foundation through the XPLORER PRIZE。
文摘Rapid technological advancements drive miniaturization and high energy density in devices,thereby increasing nanoscale thermal management demands and urging development of higher spatial resolution technologies for thermal imaging and transport research.Here,we introduce an approach to measure nanoscale thermal resistance using in situ inelastic scanning transmission electron microscopy.By constructing unidirectional heating flux with controlled temperature gradients and analyzing electron energy-loss/gain signals under optimized acquisition conditions,nanometer-resolution in mapping phonon apparent temperature is achieved.Thus,interfacial thermal resistance is determined by calculating the ratio of interfacial temperature difference to bulk temperature gradient.This methodology enables direct measurement of thermal transport properties for atomic-scale structural features(e.g.,defects and heterointerfaces),resolving critical structure-performance relationships,providing a useful tool for investigating thermal phenomena at the(sub-)nanoscale.
文摘This paper presents the study and application of the electronic device anti-interference techniques underhigh voltage and/or heavy current electro-magnetic circumstance in power system.[
基金supported by National Natural Science Foundation of China(Grant Nos.51275054,51075116)
文摘Three dimensional（3D） displacements, which can be translated further into 3D strain, are key parameters tor design, manufacturing and quality control. Using different optical setups, phase-shift methods, and algorithms, several different 3D electronic speckle pattern interferometry（ESPl） systems for displacement and strain measurements have been achieved and commercialized. This paper provides a review of the recent developments in ESPI systems for 3D displacement and strain measurement. After an overview of the fundamentals of ESP! theory, temporal phase-shift, and spatial phase-shift techniques, 3D deformation measurements by the temporal phase-shift ESPI system, which is suited well for static measurement, and by the spatial phase-shift ESPI system, which is particularly useful for dynamic measurement, are discussed. For each method, the basic theory, a brief derivation and different optical layouts are presented. The state of art application, potential and limitation of the ESPI systems are shown and demonstrated.
