Rank Histograms are suitable tools to assess the quality of ensembles within an ensemble prediction system or framework. By counting the rank of a given variable in the ensemble, we are basically making a sample analy...Rank Histograms are suitable tools to assess the quality of ensembles within an ensemble prediction system or framework. By counting the rank of a given variable in the ensemble, we are basically making a sample analysis, which does not allow us to distinguish if the origin of its variability is external noise or comes from chaotic sources. The recently introduced Mean to Variance Logarithmic （MVL） Diagram accounts for the spatial variability, being very sensitive to the spatial localization produced by infinitesimal perturbations of spatiotemporal chaotic systems. By using as a benchmark a simple model subject to noise, we show the distinct information given by Rank Histograms and MVL Diagrams. Hence, the main effects of the external noise can be visualized in a graphic. From the MVL diagram we clearly observe a reduction of the amplitude growth rate and of the spatial localization （chaos suppression）, while from the Rank Histogram we observe changes in the reliability of the ensemble. We conclude that in a complex framework including spatiotemporal chaos and noise, both provide a more complete forecasting picture.展开更多
To improve the logic stability of conventional multi-valued logic（MVL） circuits designed with a GaNbased resonate tunneling diode（RTD）, we proposed a GaN/InGaN/AlGaN multi-quantum well（MQW） RTD. The proposed RTD...To improve the logic stability of conventional multi-valued logic（MVL） circuits designed with a GaNbased resonate tunneling diode（RTD）, we proposed a GaN/InGaN/AlGaN multi-quantum well（MQW） RTD. The proposed RTD was simulated through solving the coupled Schrodinger and Poisson equations in the numerical non-equilibrium Green＇s function（NEGF） method on the TCAD platform. The proposed RTD was grown layer by layer in epitaxial technologies. Simulated results indicate that its current-voltage characteristic appears to have a wider total negative differential resistance region than those of conventional ones and an obvious hysteresis loop at room temperature. To increase the Al composite of AIGaN barrier layers properly results in increasing of both the total negative differential resistance region width and the hysteresis loop width, which is helpful to improve the logic stability of MVL circuits. Moreover, the complement resonate tunneling transistor pair consisted of the proposed RTDs or the proposed RTD and enhanced mode HEMT controlled RTD8 is capable of generating versatile MVL modes at different supply voltages less than 3.3 V, which is very attractive for implementing more complex MVL function digital integrated circuits and systems with less devices, super high speed linear or nonlinear ADC and voltage sensors with a built-in super high speed ADC function.展开更多
基金support from MEC,Spain,through Grant No.CGL2007-64387/CLIthe AECID,Spain,for support through projects A/013666/07 and A/018685/08
文摘Rank Histograms are suitable tools to assess the quality of ensembles within an ensemble prediction system or framework. By counting the rank of a given variable in the ensemble, we are basically making a sample analysis, which does not allow us to distinguish if the origin of its variability is external noise or comes from chaotic sources. The recently introduced Mean to Variance Logarithmic （MVL） Diagram accounts for the spatial variability, being very sensitive to the spatial localization produced by infinitesimal perturbations of spatiotemporal chaotic systems. By using as a benchmark a simple model subject to noise, we show the distinct information given by Rank Histograms and MVL Diagrams. Hence, the main effects of the external noise can be visualized in a graphic. From the MVL diagram we clearly observe a reduction of the amplitude growth rate and of the spatial localization （chaos suppression）, while from the Rank Histogram we observe changes in the reliability of the ensemble. We conclude that in a complex framework including spatiotemporal chaos and noise, both provide a more complete forecasting picture.
基金Project supported by the National Natural Science Foundation of China(Nos.61302009,61571171)
文摘To improve the logic stability of conventional multi-valued logic（MVL） circuits designed with a GaNbased resonate tunneling diode（RTD）, we proposed a GaN/InGaN/AlGaN multi-quantum well（MQW） RTD. The proposed RTD was simulated through solving the coupled Schrodinger and Poisson equations in the numerical non-equilibrium Green＇s function（NEGF） method on the TCAD platform. The proposed RTD was grown layer by layer in epitaxial technologies. Simulated results indicate that its current-voltage characteristic appears to have a wider total negative differential resistance region than those of conventional ones and an obvious hysteresis loop at room temperature. To increase the Al composite of AIGaN barrier layers properly results in increasing of both the total negative differential resistance region width and the hysteresis loop width, which is helpful to improve the logic stability of MVL circuits. Moreover, the complement resonate tunneling transistor pair consisted of the proposed RTDs or the proposed RTD and enhanced mode HEMT controlled RTD8 is capable of generating versatile MVL modes at different supply voltages less than 3.3 V, which is very attractive for implementing more complex MVL function digital integrated circuits and systems with less devices, super high speed linear or nonlinear ADC and voltage sensors with a built-in super high speed ADC function.
