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Design of high-speed MUTC-PD with electric field regulation layer 被引量:1
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作者 XU Jian-bo LIU Kai +4 位作者 DONG Xiao-wen DUAN Xiao-feng HUANG Yong-qing WANG Qi REN Xiao-min 《中国光学(中英文)》 北大核心 2025年第2期393-400,共8页
This paper proposes a novel modified uni-traveling-carrier photodiode(MUTC-PD)featuring an electric field regulation layer:a p-type doped thin layer inserted behind the PD’s n-doped cliff layer.This electric field re... This paper proposes a novel modified uni-traveling-carrier photodiode(MUTC-PD)featuring an electric field regulation layer:a p-type doped thin layer inserted behind the PD’s n-doped cliff layer.This electric field regulation layer enhances the PD’s performance by not only reducing and smoothing the electric field intensity in the collector layer,allowing photo-generated electrons to transit at peak drift velocity,but also improving the electric field intensity in the depleted absorber layer and optimizing the photo-generated carriers’saturated transit performance.Additionally,the transport characteristics of the peak drift velocity of photogenerated electrons in the device’s collection layer can be used to optimize its parasitic characteristics.The electron’s peak drift velocity compensates for the lost transit time.Thus improving the 3 dB bandwidth of the PD’s photo response.Finally obtains a MUTC-PD with a 3 dB bandwidth of 68 GHz at a responsivity of 0.502 A/W,making it suitable for 100 Gbit/s optical receivers. 展开更多
关键词 peak electron drift velocity transit performance mutc-pd optical fiber communication optical interconnect
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X波段高功率InP/InGaAs单行载流子光电二极管
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作者 杨大宝 刘波 +3 位作者 周幸叶 许婧 邢东 冯志红 《半导体技术》 北大核心 2025年第10期1001-1005,共5页
为提高光电转换器件的输出功率,设计并制备了一种新型InP/InGaAs高功率电荷补偿(CC)改进型单行载流子(MUTC)光电二极管(PD)。InGaAs吸收层采用p型高斯掺杂部分耗尽层与非故意掺杂耗尽层相结合的形式,在异质结界面产生一个强电场以加速... 为提高光电转换器件的输出功率,设计并制备了一种新型InP/InGaAs高功率电荷补偿(CC)改进型单行载流子(MUTC)光电二极管(PD)。InGaAs吸收层采用p型高斯掺杂部分耗尽层与非故意掺杂耗尽层相结合的形式,在异质结界面产生一个强电场以加速电子通过异质结界面,从而起到缓解异质结电子积聚的作用,增大了芯片的3 dB带宽;在吸收层和收集层间增加一层n型掺杂InP崖层,以增强异质结界面的电场,有效缓解了芯片空间电荷效应。为提高器件的高功率输出性能,将芯片阳极结直径增大到40μm,以增加芯片的散热面积;将背入射式芯片以倒装焊方式安装到300μm厚的金刚石基片上,以提高其散热性能。经测试,在1.55μm波长的激光照射下,该CC-MUCT-PD芯片的响应度在-6 V偏压下达到0.7 A/W,在10 GHz处脉冲输出功率为313 mW。 展开更多
关键词 高输出功率 电荷补偿(CC)改进型单行载流子(MUTC)光电二极管(PD) 高斯掺杂 背入射 金刚石基底
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