The influence of substrate temperature on microstructure, electrical and optical properties of in situ- textured zinc oxide （ZnO） films fabricated by metal organic chemical vapor deposition （MOVCD） had been invest...The influence of substrate temperature on microstructure, electrical and optical properties of in situ- textured zinc oxide （ZnO） films fabricated by metal organic chemical vapor deposition （MOVCD） had been investigated. Results indicated that the substrate tempera- ture played a very important role on preparation of ZnO thin film. With the raising of temperature, firstly ZnO crystals were perpendicular to the substrate, then they were grown inclining toward the substrate, finally ZnO crystals grown in layers but not regular. Consequently, ZnO film surface morphology changed from smooth to a pyramid structure and then disappeared little by little. Moreover, it was also found in this study that ZnO film was characterized with high crystallinity, low resistivity （2.17 x 10 2） and high transmittance （〉 80%）. These results suggested that ZnO thin film is suitable for front electrode of silicon thin film solar cell.展开更多
Group Ⅲ-nitride material system possesses some unique properties,such as large spectrum coverage from infrared to deep ultraviolet,wide energy band gap,high electron saturation velocity,high electrical breakdown fiel...Group Ⅲ-nitride material system possesses some unique properties,such as large spectrum coverage from infrared to deep ultraviolet,wide energy band gap,high electron saturation velocity,high electrical breakdown field,and strong polarization effect,which enables the big family has a very wide application range from optoelectronic to power electronic area.Furthermore,the successful growth of GaN-related III-nitride material on large size silicon substrate enable the above applications easily realize the commercialization,because of the cost-effective device fabrication on the platform of Si-based integrated circuits.In this article,the progress and development of the GaN-based materials and light-emitting diodes grown on Si substrate were summarized,in which some key issues regarding to the material growth and device fabrication were reviewed.展开更多
文摘The influence of substrate temperature on microstructure, electrical and optical properties of in situ- textured zinc oxide （ZnO） films fabricated by metal organic chemical vapor deposition （MOVCD） had been investigated. Results indicated that the substrate tempera- ture played a very important role on preparation of ZnO thin film. With the raising of temperature, firstly ZnO crystals were perpendicular to the substrate, then they were grown inclining toward the substrate, finally ZnO crystals grown in layers but not regular. Consequently, ZnO film surface morphology changed from smooth to a pyramid structure and then disappeared little by little. Moreover, it was also found in this study that ZnO film was characterized with high crystallinity, low resistivity （2.17 x 10 2） and high transmittance （〉 80%）. These results suggested that ZnO thin film is suitable for front electrode of silicon thin film solar cell.
基金supported by the National Basic Research Program of China (2010CB923200 and 2011CB301903)the National High Technology Research and Development Program of China (2011AA03A101)+2 种基金the National Natural Science Foundation of China (61274039 and 51177175)Ph.D. Programs Foundation of Ministry of Education of China (20110171110021)the Foundation of the Key Technologies R&D Program of Guangdong Province (2010A081002005)
文摘Group Ⅲ-nitride material system possesses some unique properties,such as large spectrum coverage from infrared to deep ultraviolet,wide energy band gap,high electron saturation velocity,high electrical breakdown field,and strong polarization effect,which enables the big family has a very wide application range from optoelectronic to power electronic area.Furthermore,the successful growth of GaN-related III-nitride material on large size silicon substrate enable the above applications easily realize the commercialization,because of the cost-effective device fabrication on the platform of Si-based integrated circuits.In this article,the progress and development of the GaN-based materials and light-emitting diodes grown on Si substrate were summarized,in which some key issues regarding to the material growth and device fabrication were reviewed.
