A novel approach for the fabrication of a metal oxide semiconductor（MOS） structure was reported.The process comprises electrochemical deposition of aluminum and zinc layers on a base of nickel-chromium alloy. This t...A novel approach for the fabrication of a metal oxide semiconductor（MOS） structure was reported.The process comprises electrochemical deposition of aluminum and zinc layers on a base of nickel-chromium alloy. This two-layer structure was thermally oxidized at 400℃for 40 min to produce thin layers of aluminum oxide as an insulator and zinc oxide as a semiconductor on a metallic substrate.Using deposition parameters,device dimensions and SEM micrographs of the layers,the device parameters were calculated.The resultant MOS structure was characterized by a C-V curve method.From this curve,the device maximum capacitance and threshold voltage were estimated to be about 0.74 nF and -2.9 V,respectively,which are in the order of model-based calculations.展开更多
The interface defects at the Si/SiO_2 interface in ρ-type silicon (111) MOS structures have been studied by the DLTS method. A dominant defect H_(it),(0.503) at the Si/SiO_2 interface has been found. Its characterist...The interface defects at the Si/SiO_2 interface in ρ-type silicon (111) MOS structures have been studied by the DLTS method. A dominant defect H_(it),(0.503) at the Si/SiO_2 interface has been found. Its characteristics are (i) the average hole ionization Gibbs free energy △G_p≥0.503 eV; (ii) by changing the gate bias when the distance from Fermi level to the top of Si valence band at the Si/SiO_2 interface is less than △G_p there is still the strong DLTS peak; (iii) its hole apparent activation energy increases with the dectease of the height of semiconductor surface potential barrier; and (iv) its hole capture process causes the multiexponential capacitance transience as a function of pulse width and the H_(it)(0.503) level are very difficult to be fully filled with the holes introduced by thepulst with alimited width. All above show that there is a continuous transition energy band between the energy bands of the covalent crystal silicon and the SiO_2 in the Si/SiO_2 systems formed by thermal oxidation; the dominant defect H_(it)(0.503) is distributed in the transition region, and the distance of H_(it)(0.503) level from the top of the valence band increases with the distance from the silicon surface.展开更多
With the development of ULSI silicon technology, metal oxide semiconductor field effect transistor (MOSFET) devices are scaling down to nanometer regime. Energy of carriers in inversion layer in MOS structure is quant...With the development of ULSI silicon technology, metal oxide semiconductor field effect transistor (MOSFET) devices are scaling down to nanometer regime. Energy of carriers in inversion layer in MOS structure is quantized and consequently, the physics and then the transport characteris-tics of inversion layer carriers are different from those in semi-classical theory. One essential matter is that the widely used concept of conduction band (valence band as well) effective density-of-states is no longer valid in quantized inversion layer. In this paper, an alternative concept, called surface layer effective density-of-states, is used to model the characteristics of MOS structure including threshold voltage, carrier sheet density, surface potential as well as capacitance.展开更多
The generation of oxide charge for 4nm pMOSFETs under hot-carrier stress is investigated by the charge pumping measurements.Firstly,the direct experimental evidences of logarithmic time dependence of hole trapping is ...The generation of oxide charge for 4nm pMOSFETs under hot-carrier stress is investigated by the charge pumping measurements.Firstly,the direct experimental evidences of logarithmic time dependence of hole trapping is observed for pMOSFETs with different channel lengths under hot-carrier stress.Thus,the relationships of oxide charge generation,including electron trapping and hole trapping effects,with different stress voltages and channel lengths are analyzed.It is also found that there is a two-step process in the generation of oxide charge for pMOSFETs.For a short stress time,electron trapping is predominant,whereas for a long stress time,hole trapping dominates the generation of oxide charge.展开更多
The present paper focused on the detection of methanol and propanol using Pd-gate metal-oxide-semiconductor （MOS） sensor. Surface mor- phology and composition of the gate film were studied by scanning electron micro...The present paper focused on the detection of methanol and propanol using Pd-gate metal-oxide-semiconductor （MOS） sensor. Surface mor- phology and composition of the gate film were studied by scanning electron microscopy （SEM） and atomic force microscopy （AFM）. The response of the sensor for propanol and methanol was measured as shift in capacitance-voltage （C-V） and conductance-voltage （G-V） curves of the MOS structure. The sensitivity of the sensor towards methanol was found to be greater than that towards propanol. It was 58.2% for methanol and 32% for propanol （at 0.6 V, 1 MHz） in terms of capacitance measurements, while in terms of conductance results the sensitivity was found to be 57.2% for methanol and 38.9% for propanol at 1 kHz. The discontinuities or cracks present in the microstructure of the gate material are believed to be mainly responsible for the high sensitivity of the sensor, going with the decomposition of gas molecules and subsequent hydrogen permeation through Pd.展开更多
According to the definition of interface traps,a new application of relaxation spectral technique to sub-threshold swing shift and sub-threshold gate voltage shift is proposed to extract interface trap density in 1.9n...According to the definition of interface traps,a new application of relaxation spectral technique to sub-threshold swing shift and sub-threshold gate voltage shift is proposed to extract interface trap density in 1.9nm MOSFET.And thus the energy distribution of interface trap can be determined.According to the two methods,the energy profile of interface traps agrees with those reported in literature.Compared to other methods,this method is simpler and more convenient.展开更多
The saturation behavior of stress current is studied.The three types of precursor sites for trap generation are also introduced by fitting method based on first order rate equation.A further investigation by statistic...The saturation behavior of stress current is studied.The three types of precursor sites for trap generation are also introduced by fitting method based on first order rate equation.A further investigation by statistics experiments shows that there are definite relationships among time constant of trap generation,the time to breakdown,and stress voltage.It also means that the time constant of trap generation can be used to predict oxide lifetime.This method is faster for TDDB study compared with usual breakdown experiments.展开更多
With oil-soluble molybdenum compound and sublimed sulfur serving as raw materials, two dispersed Mo-based catalysts were prepared, characterized and then applied to the hydrogenation conversion of phenanthrene. The te...With oil-soluble molybdenum compound and sublimed sulfur serving as raw materials, two dispersed Mo-based catalysts were prepared, characterized and then applied to the hydrogenation conversion of phenanthrene. The test results showed that under the conditions specified by this study, the catalyst prepared in a higher sulfiding atmosphere was more catalytically active due to its higher content of MoS2 and stronger intrinsic catalytic activity of MoS2 unit, which demonstrated that the sulfiding atmosphere for the preparation of catalysts not only could influence the yield of MoS2 but also the structure of MoS2.The analysis on the selectivity of octahydrophenanthrene isomers revealed that the catalyst prepared in a lower sulfiding atmosphere had a relatively higher catalytic selectivity to the hydrogenation of outer aromatic ring and the structure of catalysts could be modified under the specific reaction conditions. Moreover, the selectivity between the isomers of as-octahydrophenanthrene at different reaction time and temperature was analyzed and, based on the results, a hydrogenation mechanism over dispersed Mo-based catalysts was suggested, with monatomic hydrogen transfer and catalytic surface desorption of the half-addition intermediates functioning as the key points. In addition, it is concluded that the catalyst prepared in a lower sulfiding atmosphere was more capable of adsorption than the other one.展开更多
文摘A novel approach for the fabrication of a metal oxide semiconductor（MOS） structure was reported.The process comprises electrochemical deposition of aluminum and zinc layers on a base of nickel-chromium alloy. This two-layer structure was thermally oxidized at 400℃for 40 min to produce thin layers of aluminum oxide as an insulator and zinc oxide as a semiconductor on a metallic substrate.Using deposition parameters,device dimensions and SEM micrographs of the layers,the device parameters were calculated.The resultant MOS structure was characterized by a C-V curve method.From this curve,the device maximum capacitance and threshold voltage were estimated to be about 0.74 nF and -2.9 V,respectively,which are in the order of model-based calculations.
基金Project supported by the National Natural Science Foundation of China.
文摘The interface defects at the Si/SiO_2 interface in ρ-type silicon (111) MOS structures have been studied by the DLTS method. A dominant defect H_(it),(0.503) at the Si/SiO_2 interface has been found. Its characteristics are (i) the average hole ionization Gibbs free energy △G_p≥0.503 eV; (ii) by changing the gate bias when the distance from Fermi level to the top of Si valence band at the Si/SiO_2 interface is less than △G_p there is still the strong DLTS peak; (iii) its hole apparent activation energy increases with the dectease of the height of semiconductor surface potential barrier; and (iv) its hole capture process causes the multiexponential capacitance transience as a function of pulse width and the H_(it)(0.503) level are very difficult to be fully filled with the holes introduced by thepulst with alimited width. All above show that there is a continuous transition energy band between the energy bands of the covalent crystal silicon and the SiO_2 in the Si/SiO_2 systems formed by thermal oxidation; the dominant defect H_(it)(0.503) is distributed in the transition region, and the distance of H_(it)(0.503) level from the top of the valence band increases with the distance from the silicon surface.
文摘With the development of ULSI silicon technology, metal oxide semiconductor field effect transistor (MOSFET) devices are scaling down to nanometer regime. Energy of carriers in inversion layer in MOS structure is quantized and consequently, the physics and then the transport characteris-tics of inversion layer carriers are different from those in semi-classical theory. One essential matter is that the widely used concept of conduction band (valence band as well) effective density-of-states is no longer valid in quantized inversion layer. In this paper, an alternative concept, called surface layer effective density-of-states, is used to model the characteristics of MOS structure including threshold voltage, carrier sheet density, surface potential as well as capacitance.
文摘The generation of oxide charge for 4nm pMOSFETs under hot-carrier stress is investigated by the charge pumping measurements.Firstly,the direct experimental evidences of logarithmic time dependence of hole trapping is observed for pMOSFETs with different channel lengths under hot-carrier stress.Thus,the relationships of oxide charge generation,including electron trapping and hole trapping effects,with different stress voltages and channel lengths are analyzed.It is also found that there is a two-step process in the generation of oxide charge for pMOSFETs.For a short stress time,electron trapping is predominant,whereas for a long stress time,hole trapping dominates the generation of oxide charge.
文摘The present paper focused on the detection of methanol and propanol using Pd-gate metal-oxide-semiconductor （MOS） sensor. Surface mor- phology and composition of the gate film were studied by scanning electron microscopy （SEM） and atomic force microscopy （AFM）. The response of the sensor for propanol and methanol was measured as shift in capacitance-voltage （C-V） and conductance-voltage （G-V） curves of the MOS structure. The sensitivity of the sensor towards methanol was found to be greater than that towards propanol. It was 58.2% for methanol and 32% for propanol （at 0.6 V, 1 MHz） in terms of capacitance measurements, while in terms of conductance results the sensitivity was found to be 57.2% for methanol and 38.9% for propanol at 1 kHz. The discontinuities or cracks present in the microstructure of the gate material are believed to be mainly responsible for the high sensitivity of the sensor, going with the decomposition of gas molecules and subsequent hydrogen permeation through Pd.
文摘According to the definition of interface traps,a new application of relaxation spectral technique to sub-threshold swing shift and sub-threshold gate voltage shift is proposed to extract interface trap density in 1.9nm MOSFET.And thus the energy distribution of interface trap can be determined.According to the two methods,the energy profile of interface traps agrees with those reported in literature.Compared to other methods,this method is simpler and more convenient.
文摘The saturation behavior of stress current is studied.The three types of precursor sites for trap generation are also introduced by fitting method based on first order rate equation.A further investigation by statistics experiments shows that there are definite relationships among time constant of trap generation,the time to breakdown,and stress voltage.It also means that the time constant of trap generation can be used to predict oxide lifetime.This method is faster for TDDB study compared with usual breakdown experiments.
基金the financial support from the National Basic Research Program of China (Grant 2012CB224801)
文摘With oil-soluble molybdenum compound and sublimed sulfur serving as raw materials, two dispersed Mo-based catalysts were prepared, characterized and then applied to the hydrogenation conversion of phenanthrene. The test results showed that under the conditions specified by this study, the catalyst prepared in a higher sulfiding atmosphere was more catalytically active due to its higher content of MoS2 and stronger intrinsic catalytic activity of MoS2 unit, which demonstrated that the sulfiding atmosphere for the preparation of catalysts not only could influence the yield of MoS2 but also the structure of MoS2.The analysis on the selectivity of octahydrophenanthrene isomers revealed that the catalyst prepared in a lower sulfiding atmosphere had a relatively higher catalytic selectivity to the hydrogenation of outer aromatic ring and the structure of catalysts could be modified under the specific reaction conditions. Moreover, the selectivity between the isomers of as-octahydrophenanthrene at different reaction time and temperature was analyzed and, based on the results, a hydrogenation mechanism over dispersed Mo-based catalysts was suggested, with monatomic hydrogen transfer and catalytic surface desorption of the half-addition intermediates functioning as the key points. In addition, it is concluded that the catalyst prepared in a lower sulfiding atmosphere was more capable of adsorption than the other one.
