氮化铝镓(AlGaN)与氮化铝(AlN)属于第三代半导体材料,广泛应用于发光二极管(LED)和功率电子器件领域。金属有机化学气相沉积(Metal-organic Chemical Vapor Deposition,MOCVD)是制备这些半导体材料的关键。当应用预混喷淋式MOCVD时,在...氮化铝镓(AlGaN)与氮化铝(AlN)属于第三代半导体材料,广泛应用于发光二极管(LED)和功率电子器件领域。金属有机化学气相沉积(Metal-organic Chemical Vapor Deposition,MOCVD)是制备这些半导体材料的关键。当应用预混喷淋式MOCVD时,在高温条件下,预反应会对薄膜的均匀性产生不利影响,降低混合腔的温度可以解决这个问题。对混合腔下盘、喷淋口上盘和盘体组成的通道进行冷却,可以使混合腔处于低温状态。笔者对原有冷却通道进行分析,发现温度分布均匀性较差。为了解决以上问题,本文提出多扇区通道冷却和多平行通道冷却方式,研究结果表明,八扇区B模型可以更好地冷却混合腔,冷却均匀性更高。展开更多
A homemade 7×2 inch MOCVD system is presented.With this system,high quality GaN epitaxial layers,InGaN/GaN multi-quantum wells and blue LED structural epitaxial layers have been successfully grown. The non-unifor...A homemade 7×2 inch MOCVD system is presented.With this system,high quality GaN epitaxial layers,InGaN/GaN multi-quantum wells and blue LED structural epitaxial layers have been successfully grown. The non-uniformity of undoped GaN epitaxial layers is as low as 2.86%.Using the LED structural epitaxial layers, blue LED chips with area of 350×350μm2 were fabricated.Under 20 mA injection current,the optical output power of the blue LED is 8.62 mW.展开更多
High-quality AlN epitaxial layers with low dislocation densities and uniform crystal quality are essential for next-gener-ation optoelectronic and power devices.This study reports the epitaxial growth of 6-inch AlN fi...High-quality AlN epitaxial layers with low dislocation densities and uniform crystal quality are essential for next-gener-ation optoelectronic and power devices.This study reports the epitaxial growth of 6-inch AlN films on 17 nm AlN/sapphire tem-plates using metal-organic chemical vapor deposition(MOCVD).Comprehensive characterization reveals significant advance-ments in crystal quality and uniformity.Atomic force microscopy(AFM)shows progressive surface roughness reduction during early growth stages,achieving stabilization at a root mean square(RMS)roughness of 0.216 nm within 3 min,confirming suc-cessful 2D growth mode.X-ray rocking curve(XRC)analysis indicates a marked reduction in the(0002)reflection full width at half maximum(FWHM),from 445 to 96 arcsec,evidencing effective dislocation annihilation.Transmission electron microscopy(TEM)demonstrates the elimination of edge dislocations near the AlN template interface.Stress analysis highlights the role of a highly compressive 17 nm AlN template(5.11 GPa)in facilitating threading dislocation bending and annihilation,yielding a final dislocation density of~1.5×10^(7) cm^(-2).Raman spectroscopy and XRC mapping confirm excellent uniformity of stress and crystal quality across the wafer.These findings demonstrate the feasibility of this method for producing high-quality,large-area,atomically flat AlN films,advancing applications in optoelectronics and power electronics.展开更多
对实验室用 MOCVD方法生长的未掺杂 Ga N单晶膜的发光性能进行了研究。结果表明 :在室温时未掺杂 Ga N单晶出现的能量为 2 .9e V左右蓝带发光与补偿度有较强的依赖关系。高补偿 Ga N的蓝带发射强 ,低补偿 Ga N的蓝带发射弱。对蓝带发光...对实验室用 MOCVD方法生长的未掺杂 Ga N单晶膜的发光性能进行了研究。结果表明 :在室温时未掺杂 Ga N单晶出现的能量为 2 .9e V左右蓝带发光与补偿度有较强的依赖关系。高补偿 Ga N的蓝带发射强 ,低补偿 Ga N的蓝带发射弱。对蓝带发光机理进行了探讨 ,认为蓝带为导带电子跃迁至受主能级的发光 ( e A发光 )。观察到降低 Ga N补偿度能提高 Ga N带边发射强度。展开更多
文摘氮化铝镓(AlGaN)与氮化铝(AlN)属于第三代半导体材料,广泛应用于发光二极管(LED)和功率电子器件领域。金属有机化学气相沉积(Metal-organic Chemical Vapor Deposition,MOCVD)是制备这些半导体材料的关键。当应用预混喷淋式MOCVD时,在高温条件下,预反应会对薄膜的均匀性产生不利影响,降低混合腔的温度可以解决这个问题。对混合腔下盘、喷淋口上盘和盘体组成的通道进行冷却,可以使混合腔处于低温状态。笔者对原有冷却通道进行分析,发现温度分布均匀性较差。为了解决以上问题,本文提出多扇区通道冷却和多平行通道冷却方式,研究结果表明,八扇区B模型可以更好地冷却混合腔,冷却均匀性更高。
基金Project supported by the National High Technology Research and Development Program of China(No.2006AA03A141)the Knowledge Innovation Engineering of the Chinese Academy of Sciences(No.YYYJ-0701-02)+2 种基金the National Natural Science Foundation of China (Nos.60890193,60906006)the State Key Development Program for Basic Research of China(Nos.2006CB604905,2010CB327503)the Knowledge Innovation Program of the Chinese Academy of Sciences(Nos.ISCAS2008T01,ISCAS2009L01,ISCAS2009L02)
文摘A homemade 7×2 inch MOCVD system is presented.With this system,high quality GaN epitaxial layers,InGaN/GaN multi-quantum wells and blue LED structural epitaxial layers have been successfully grown. The non-uniformity of undoped GaN epitaxial layers is as low as 2.86%.Using the LED structural epitaxial layers, blue LED chips with area of 350×350μm2 were fabricated.Under 20 mA injection current,the optical output power of the blue LED is 8.62 mW.
基金supported by National Key R&D Program of China(2022YFB3605100)the National Science Fund for Distinguished Young Scholars of China(62425408)+5 种基金the National Natural Science Foundation of China(62204241,U22A2084,and 62121005)Key Research and Development Projects of Jilin Provincial Science and Technology Development Plan(20240302027GX)the Natural Science Foundation of Jilin Province(20230101345JC,20230101360JC,20230101107JC)the Youth Innovation Promotion Association of CAS(2023223)the Young Elite Scientist Sponsorship Program By CAST(YESS20200182)the CAS Talents Program.
文摘High-quality AlN epitaxial layers with low dislocation densities and uniform crystal quality are essential for next-gener-ation optoelectronic and power devices.This study reports the epitaxial growth of 6-inch AlN films on 17 nm AlN/sapphire tem-plates using metal-organic chemical vapor deposition(MOCVD).Comprehensive characterization reveals significant advance-ments in crystal quality and uniformity.Atomic force microscopy(AFM)shows progressive surface roughness reduction during early growth stages,achieving stabilization at a root mean square(RMS)roughness of 0.216 nm within 3 min,confirming suc-cessful 2D growth mode.X-ray rocking curve(XRC)analysis indicates a marked reduction in the(0002)reflection full width at half maximum(FWHM),from 445 to 96 arcsec,evidencing effective dislocation annihilation.Transmission electron microscopy(TEM)demonstrates the elimination of edge dislocations near the AlN template interface.Stress analysis highlights the role of a highly compressive 17 nm AlN template(5.11 GPa)in facilitating threading dislocation bending and annihilation,yielding a final dislocation density of~1.5×10^(7) cm^(-2).Raman spectroscopy and XRC mapping confirm excellent uniformity of stress and crystal quality across the wafer.These findings demonstrate the feasibility of this method for producing high-quality,large-area,atomically flat AlN films,advancing applications in optoelectronics and power electronics.
文摘对实验室用 MOCVD方法生长的未掺杂 Ga N单晶膜的发光性能进行了研究。结果表明 :在室温时未掺杂 Ga N单晶出现的能量为 2 .9e V左右蓝带发光与补偿度有较强的依赖关系。高补偿 Ga N的蓝带发射强 ,低补偿 Ga N的蓝带发射弱。对蓝带发光机理进行了探讨 ,认为蓝带为导带电子跃迁至受主能级的发光 ( e A发光 )。观察到降低 Ga N补偿度能提高 Ga N带边发射强度。
