A novel shielding scheme is developed by inserting a concave shield between a metal–insulator–metal （MIM）capacitor and the silicon substrate.Chip measurements reveal that the concave shield improves the quality fa...A novel shielding scheme is developed by inserting a concave shield between a metal–insulator–metal （MIM）capacitor and the silicon substrate.Chip measurements reveal that the concave shield improves the quality factor by 11%at 11.8 GHz and 14%at 18.8 GHz compared with an unshielded MIM capacitor.It also alleviates the effect on shunt capacitance between the bottom plate of the MIM capacitor and the shield layer.Moreover,because the concave shields simplify substrate modeling,a simple circuit model of the MIM capacitor with concave shield is presented for radio frequency applications.展开更多
The impact of various thicknesses of Al2O3 metal-insulator-metal （MIM） capacitors on direct current and radio frequency （RF） characteristics is investigated. For 20 nm Al2O3, the fabricated capacitor exhibits a hi...The impact of various thicknesses of Al2O3 metal-insulator-metal （MIM） capacitors on direct current and radio frequency （RF） characteristics is investigated. For 20 nm Al2O3, the fabricated capacitor exhibits a high capacitance density of 3850 pF/mm2 and acceptable voltage coefficients of capacitance of 681 ppm/V2 at 1 MHz. An outstanding VCC-a of 74 ppm/V2 at 1 MHz, resonance frequency of 8.2 GHz and Q factor of 41 at 2 GHz are obtained by 100 nm Al2O3 MIM capacitors. High-performance MIM capacitors using GaAs process and atomic layer deposition Al2O3 could be very promising candidates for GaAs RFIC applications.展开更多
探讨了氧气等离子处理法对基于Zr Al O薄膜的MIM结构电容电学性能的低温工艺优化。Zr Al O薄膜用射频磁控溅射法制得,之后在不改变真空条件的情况下进行Zr Al O薄膜的氧气等离子处理。氧空位是影响薄膜电容性能的主要因素,通过改变氧气...探讨了氧气等离子处理法对基于Zr Al O薄膜的MIM结构电容电学性能的低温工艺优化。Zr Al O薄膜用射频磁控溅射法制得,之后在不改变真空条件的情况下进行Zr Al O薄膜的氧气等离子处理。氧空位是影响薄膜电容性能的主要因素,通过改变氧气流量和等离子功率等处理条件可以影响氧空位的分布状态。通过分析受氧空位影响的电容电学性能,最终确定的等离子处理工艺可以使薄膜漏电流降低三个数量级以上,同时非线性电压系数减小约60%。展开更多
统计过程控制(statistic process control,SPC)是一种科学有效的方法,该技术的应用改变了以往靠经验来进行调整生产的模式。以M IM电容为例,首先通过对电容容值数据连续采集,进行定量的数理统计分析,评估该工艺的工艺控制能力。然后绘...统计过程控制(statistic process control,SPC)是一种科学有效的方法,该技术的应用改变了以往靠经验来进行调整生产的模式。以M IM电容为例,首先通过对电容容值数据连续采集,进行定量的数理统计分析,评估该工艺的工艺控制能力。然后绘制控制图,对工艺进行监控。通过分析控制图,最终对工艺过程的能力水平以及是否处于统计受控状态作出定量结论。在工艺过程中当发现统计数据异常时,及时采取纠正措施,使工艺状态始终受控。通过运用SPC技术对数据进行分析,能有效改进工艺,提高产品质量。展开更多
文摘A novel shielding scheme is developed by inserting a concave shield between a metal–insulator–metal （MIM）capacitor and the silicon substrate.Chip measurements reveal that the concave shield improves the quality factor by 11%at 11.8 GHz and 14%at 18.8 GHz compared with an unshielded MIM capacitor.It also alleviates the effect on shunt capacitance between the bottom plate of the MIM capacitor and the shield layer.Moreover,because the concave shields simplify substrate modeling,a simple circuit model of the MIM capacitor with concave shield is presented for radio frequency applications.
基金Project supported by the National Natural Science Foundation of China(Nos.61274077,61474031)the Guangxi Natural Science Foundation(No.2013GXNSFGA019003)+6 种基金the Guangxi Department of Education Project(No.201202ZD041)the Guilin City Technology Bureau(Nos.20120104-8,20130107-4)the China Postdoctoral Science Foundation Funded Project(Nos.2012M521127,2013T60566)the National Basic Research Program of China(Nos.2011CBA00605,2010CB327501)the Innovation Project of GUET Graduate Education(Nos.GDYCSZ201448,GDYCSZ201449)the State Key Laboratory of Electronic Thin Films and Integrated Devices,UESTC(No.KFJJ201205)the Guilin City Science and Technology Development Project(Nos.20130107-4,20120104-8)
文摘The impact of various thicknesses of Al2O3 metal-insulator-metal （MIM） capacitors on direct current and radio frequency （RF） characteristics is investigated. For 20 nm Al2O3, the fabricated capacitor exhibits a high capacitance density of 3850 pF/mm2 and acceptable voltage coefficients of capacitance of 681 ppm/V2 at 1 MHz. An outstanding VCC-a of 74 ppm/V2 at 1 MHz, resonance frequency of 8.2 GHz and Q factor of 41 at 2 GHz are obtained by 100 nm Al2O3 MIM capacitors. High-performance MIM capacitors using GaAs process and atomic layer deposition Al2O3 could be very promising candidates for GaAs RFIC applications.
文摘探讨了氧气等离子处理法对基于Zr Al O薄膜的MIM结构电容电学性能的低温工艺优化。Zr Al O薄膜用射频磁控溅射法制得,之后在不改变真空条件的情况下进行Zr Al O薄膜的氧气等离子处理。氧空位是影响薄膜电容性能的主要因素,通过改变氧气流量和等离子功率等处理条件可以影响氧空位的分布状态。通过分析受氧空位影响的电容电学性能,最终确定的等离子处理工艺可以使薄膜漏电流降低三个数量级以上,同时非线性电压系数减小约60%。
文摘统计过程控制(statistic process control,SPC)是一种科学有效的方法,该技术的应用改变了以往靠经验来进行调整生产的模式。以M IM电容为例,首先通过对电容容值数据连续采集,进行定量的数理统计分析,评估该工艺的工艺控制能力。然后绘制控制图,对工艺进行监控。通过分析控制图,最终对工艺过程的能力水平以及是否处于统计受控状态作出定量结论。在工艺过程中当发现统计数据异常时,及时采取纠正措施,使工艺状态始终受控。通过运用SPC技术对数据进行分析,能有效改进工艺,提高产品质量。
