Metal-insulator-metal aluminium electrolytic capacitors(MIM-AECs)combine high capacity-density and high breakdown field strength of solid AECs with high-frequency responsibility,wide workingtemperature window and wate...Metal-insulator-metal aluminium electrolytic capacitors(MIM-AECs)combine high capacity-density and high breakdown field strength of solid AECs with high-frequency responsibility,wide workingtemperature window and waterproof properties of MIM nanocapacitors.However,interfacial atomic diffusion poses a major obstacle,preventing the high-voltage MIM-AECs exploitation and thereby hampering their potential and advantages in high-power and high-energy-density applications.Here,an innovative high-voltage MIM-AECs were fabricated.The AlPO_(4)buffer layer is formed on AlO(OH)/AAO/Al surface by using H_(3)PO_(4)treatment,then a stable van der Waals(vdW)SnO_(2)/AlPO_(4)/AAO/Al multilayer was constructed via atomic layer deposition(ALD)technology.Due to higher diffusion barrier and lower carrier migration of SnO_(2)/AlPO_(4)/AAO interfaces,Sn atom diffusion is inhibited and carrier acceleration by electric field is weakened,guaranteeing high breakdown field strength of dielectric AAO and avoiding local breakdown risks.Through partial etching to hydrated AlO(OH)by H_(3)PO_(4)treatment,the tunnel was further opened up to facilitate subsequent ALD-SnO_(2)entry,thus obtaining a high SnO_(2)coverage.The SnO_(2)/AlPO_(4)/AAO/Al capacitors show a comprehensive performance in high-voltage(260 V),hightemperature(335℃),high-humidity(100%RH)and high-frequency response(100 k Hz),outperforming commercial solid-state AECs,and high-energy density(8.6μWh/cm^(2)),markedly exceeding previously reported MIM capacitors.The work lays the foundation for next-generation capacitors with highvoltage,high-frequency,high-temperature and high-humidity resistance.展开更多
基金supported by the National Natural Science Foundation of China(52477221,52202296)the Natural Science Foundation of Shaanxi Province(2023KXJ-246,2022JQ-048)。
文摘Metal-insulator-metal aluminium electrolytic capacitors(MIM-AECs)combine high capacity-density and high breakdown field strength of solid AECs with high-frequency responsibility,wide workingtemperature window and waterproof properties of MIM nanocapacitors.However,interfacial atomic diffusion poses a major obstacle,preventing the high-voltage MIM-AECs exploitation and thereby hampering their potential and advantages in high-power and high-energy-density applications.Here,an innovative high-voltage MIM-AECs were fabricated.The AlPO_(4)buffer layer is formed on AlO(OH)/AAO/Al surface by using H_(3)PO_(4)treatment,then a stable van der Waals(vdW)SnO_(2)/AlPO_(4)/AAO/Al multilayer was constructed via atomic layer deposition(ALD)technology.Due to higher diffusion barrier and lower carrier migration of SnO_(2)/AlPO_(4)/AAO interfaces,Sn atom diffusion is inhibited and carrier acceleration by electric field is weakened,guaranteeing high breakdown field strength of dielectric AAO and avoiding local breakdown risks.Through partial etching to hydrated AlO(OH)by H_(3)PO_(4)treatment,the tunnel was further opened up to facilitate subsequent ALD-SnO_(2)entry,thus obtaining a high SnO_(2)coverage.The SnO_(2)/AlPO_(4)/AAO/Al capacitors show a comprehensive performance in high-voltage(260 V),hightemperature(335℃),high-humidity(100%RH)and high-frequency response(100 k Hz),outperforming commercial solid-state AECs,and high-energy density(8.6μWh/cm^(2)),markedly exceeding previously reported MIM capacitors.The work lays the foundation for next-generation capacitors with highvoltage,high-frequency,high-temperature and high-humidity resistance.
