The characteristics of thickness enhancement fact or and bandgap wavelength of selectively grown InGaAsP are investigated.A high thi ckness enhancement factor of 2.9 is obtained.Spotsize converter integrated DFB las...The characteristics of thickness enhancement fact or and bandgap wavelength of selectively grown InGaAsP are investigated.A high thi ckness enhancement factor of 2.9 is obtained.Spotsize converter integrated DFB lasers are fabricated by using the technique of SAG.The threshold current is as low as 10.8mA.The output power is 10mW at 60mA without coating and the SMSR is 35.8dB.The vertical far field angle (FWHM) is decreased from 34° to 9°.The to lerance of 1dBm misalignment is 3.4μm vertically.展开更多
文摘The characteristics of thickness enhancement fact or and bandgap wavelength of selectively grown InGaAsP are investigated.A high thi ckness enhancement factor of 2.9 is obtained.Spotsize converter integrated DFB lasers are fabricated by using the technique of SAG.The threshold current is as low as 10.8mA.The output power is 10mW at 60mA without coating and the SMSR is 35.8dB.The vertical far field angle (FWHM) is decreased from 34° to 9°.The to lerance of 1dBm misalignment is 3.4μm vertically.
