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Different localized states of travelling-wave convection in a rectangular container 被引量:2
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作者 李国栋 黄永念 《Chinese Physics B》 SCIE EI CAS CSCD 2006年第12期2984-2988,共5页
We have performed numerical simulations of localized travelling-wave convection in a binary fluid mixture heated from below in a long rectangular container. Calculations are carried out in a vertical cross section of ... We have performed numerical simulations of localized travelling-wave convection in a binary fluid mixture heated from below in a long rectangular container. Calculations are carried out in a vertical cross section of the rolls perpendic- ular to their axes. For a negative enough separation ratio, two types of quite different confined states were documented by applying different control processes. One branch of localized travelling waves survives only in a very narrow band within subcritical regime, while another branch straddles the onset of convection existing both in subcritical and super- critical regions. We elucidated that concentration field and its current are key to understand how confined convection is sustained when conductive state is absolutely unstable, The weak structures in the conducting region are demonstrated too. 展开更多
关键词 binary fluid mixture travelling-wave convection localized states
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One-dimensional method of investigating the localized states in armchair graphene-like nanoribbons with defects
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作者 谢阳 胡智健 +2 位作者 丁文浩 吕小龙 谢航 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第12期516-525,共10页
In this paper we propose a type of new analytical method to investigate the localized states in the armchair graphene-like nanoribbons. The method is based on the tight-binding model and with a standing wave assumptio... In this paper we propose a type of new analytical method to investigate the localized states in the armchair graphene-like nanoribbons. The method is based on the tight-binding model and with a standing wave assumption. The system of armchair graphene-like nanoribbons includes the armchair supercells with arbitrary elongation-type line defects and the semi-infinite nanoribbons. With this method, we analyze many interesting localized states near the line defects in the graphene and boron-nitride nanoribbons. We also derive the analytical expressions and the criteria for the localized states in the semi-infinite nanoribbons. 展开更多
关键词 graphene nanoribbons tight-binding model energy band localized states
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Localized states of flattened quantum elliptic rings and their optical properties
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作者 司徒树平 《Chinese Physics B》 SCIE EI CAS CSCD 2009年第4期1609-1613,共5页
A flattened elliptic ring containing an electron is studied. The emphasis is placed on clarifying the effect of the flattening. The localized states are classified into four types according to their inherent nodes. Wh... A flattened elliptic ring containing an electron is studied. The emphasis is placed on clarifying the effect of the flattening. The localized states are classified into four types according to their inherent nodes. When the ring becomes more flattened, the total probability of dipole absorption of each state is found to be reduced. Furthermore, each spectral line of absorption is found to shift towards red and may split into a few lines, and these lines as a whole become more diffusive. 展开更多
关键词 flattened quantum elliptic ring localized state dipole absorption
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Localized electronic states in gaps on hole-net structures of silicon
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作者 黄伟其 吕泉 +2 位作者 张荣涛 王晓允 于示强 《Chinese Physics B》 SCIE EI CAS CSCD 2009年第11期5066-5071,共6页
Hole-net structure silicon is fabricated by laser irradiation and annealing, on which a photoluminescence (PL) band in a the region of 650-750 nm is pinned and its intensity increases obviously after oxidation. It i... Hole-net structure silicon is fabricated by laser irradiation and annealing, on which a photoluminescence (PL) band in a the region of 650-750 nm is pinned and its intensity increases obviously after oxidation. It is found that the PL intensity changes with both laser irradiation time and annealing time. Calculations show that some localized states appear in the band gap of the smaller nanocrystal when Silo bonds or Si-O-Si bonds are passivated on the surface. It is discovered that the density and the number of Si=O bonds or Si-O-Si bonds related to both the irradiation time and the annealing time obviously affect the generation of the localized gap states of hole-net silicon, by which the production of stimulated emission through controlling oxidation time can be explained. 展开更多
关键词 hole-net silicon passivated bonds localized gap states
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Vortex bound states influenced by the Fermi surface anisotropy 被引量:1
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作者 方德龙 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第3期497-501,共5页
The spatial distribution of vortex bound states is often anisotropic,which is correlated with the underlying property of materials.In this work,we examine the effects of Fermi surface anisotropy on vortex bound states... The spatial distribution of vortex bound states is often anisotropic,which is correlated with the underlying property of materials.In this work,we examine the effects of Fermi surface anisotropy on vortex bound states.The large-scale calculation of vortex bound states is introduced in the presence of fourfold or twofold Fermi surface by solving the Bogoliubov–de Gennes(BdG)equations.Two kinds of quasiparticles’behaviors can be extracted from the local density of states(LDOS)around a vortex.The angle-dependent quasiparticles will move from high energy to low energy when the angle varies from curvature maxima to minima of the Fermi surface,while the angle-independent quasiparticles tend to stay at a relatively higher energy.In addition,the weight of angle-dependent quasiparticles can be enhanced by the increasing anisotropy degree of Fermi surface. 展开更多
关键词 VORTEX ANISOTROPY Fermi surface local density of states
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Observation of flat-band localized state in a one-dimensional diamond momentum lattice of ultracold atoms
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作者 曾超 石悦然 +5 位作者 毛一屹 武菲菲 谢岩骏 苑涛 戴汉宁 陈宇翱 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第1期212-217,共6页
We investigated the one-dimensional diamond ladder in the momentum lattice platform. By inducing multiple twoand four-photon Bragg scatterings among specific momentum states, we achieved a flat band system based on th... We investigated the one-dimensional diamond ladder in the momentum lattice platform. By inducing multiple twoand four-photon Bragg scatterings among specific momentum states, we achieved a flat band system based on the diamond model, precisely controlling the coupling strength and phase between individual lattice sites. Utilizing two lattice sites couplings, we generated a compact localized state associated with the flat band, which remained localized throughout the entire time evolution. We successfully realized the continuous shift of flat bands by adjusting the corresponding nearest neighbor hopping strength, enabling us to observe the complete localization process. This opens avenues for further exploration of more complex properties within flat-band systems, including investigating the robustness of flat-band localized states in disordered flat-band systems and exploring many-body localization in interacting flat-band systems. 展开更多
关键词 diamond lattice flat band momentum lattice localized state
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Electron states scattering off line edges on the surface of topological insulator
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作者 邵怀华 刘一曼 +1 位作者 周小英 周光辉 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第10期477-482,共6页
We study the local density of states (LDOS) for electrons scattering off the line edge of an atomic step defect on the surface of a three-dimensional (3D) topological insulator (TI) and the line edge of a finite... We study the local density of states (LDOS) for electrons scattering off the line edge of an atomic step defect on the surface of a three-dimensional (3D) topological insulator (TI) and the line edge of a finite 3D TI, where the front surface and side surface meet with different Fermi velocities, respectively. By using a S-function potential to model the edges, we find that the bound states existed along the step line edge significantly contribute to the LDOS near the edge, but do not modify the exponential behavior away from it. In addition, the power-law decaying behavior for LDOS oscillation away from the step is understood from the spin rotation for surface states scattering off the step defect with magnitude depending on the strength of the potential. Furthermore, the electron refraction and total reflection analogous to optics occurred at the line edge where two surfaces meet with different Fermi velocities, which leads to the LDOS decaying behavior in the greater Fermi velocity side similar to that for a step line edge. However, in the smaller velocity side the LDOS shows a different decaying behavior as x-1/2, and the wavevector of LDOS oscillation is no longer equal to the diameter of the constant energy contour of surface band, but is sensitively dependent on the ratio of the two Fermi velocities. These effects may be verified by STM measurement with high precision. 展开更多
关键词 topological insulator line defects local density of states
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Spontaneous-emission control by local density of states of photonic crystal cavity
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作者 江斌 张冶金 +3 位作者 周文君 陈微 刘安金 郑婉华 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第2期271-276,共6页
The local density of states (LDOS) of two-dimensional square lattice photonic crystal (PhC) defect cavity is studied. The results show that the LDOS in the centre is greatly reduced, while the LDOS at the point of... The local density of states (LDOS) of two-dimensional square lattice photonic crystal (PhC) defect cavity is studied. The results show that the LDOS in the centre is greatly reduced, while the LDOS at the point off the centre (for example, at the point (0.3a, 0.4a), where a is the lattice constant) is extremely enhanced. Further, the disordered radii are introduced to imitate the real devices fabricated in our experiment, and then we study the LDOS of PhC cavity with configurations of different disordered radii. The results show that in the disordered cavity, the LDOS in the centre is still greatly reduced, while the LDOS at the point (0.3a, 0.4a) is still extremely enhanced. It shows that the LDOS analysis is useful. When a laser is designed on the basis of the square lattice PhC rod cavity, in order to enhance the spontaneous emission, the active materials should not be inserted in the centre of the cavity, but located at positions off the centre. So LDOS method gives a guide to design the positions of the active materials (quantum dots) in the lasers. 展开更多
关键词 spontaneous emission local density of states photonic crystal cavity
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Local density of optical states calculated by the mode spectrum in stratified media
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作者 傅廷 陈静瑄 +5 位作者 王学友 戴迎秋 周旭彦 王宇飞 王明金 郑婉华 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第4期135-141,共7页
The local density of optical states(LDOS)is an important physical concept,which can characterize the spontaneous emission of microcavities.In order to calculate the LDOS,the relationship between the mode spectrum and ... The local density of optical states(LDOS)is an important physical concept,which can characterize the spontaneous emission of microcavities.In order to calculate the LDOS,the relationship between the mode spectrum and the LDOS is established.Then,based on the transfer matrix method and the effective resonator model,the leaky loss of the leaky mode and the mode spectrum in the one-dimensional photonic bandgap crystal waveguide are calculated,results of which indicate that the mode spectrum can characterize the leaky loss of the leaky mode.At last,the density of optical states(DOS),and the LDOS in each layer are calculated.The partial DOS and the partial LDOS in the quantum well,related to the fundamental leaky mode,can be used to find out the optimal location of the quantum well in the defect layer to couple more useful photons into the lasing mode for lasers. 展开更多
关键词 local density of optical states mode spectrum transfer matrix method
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Local density of states of dc-biased superlattices with time-dependent imperfection
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作者 阎维贤 李向荣 《Chinese Physics B》 SCIE EI CAS CSCD 2006年第4期822-827,共6页
The single-particle Green's function for a dc-biased superlattices with single impurity potential varying harmonically with time has been obtained in the framework of U(t,t') method and Floquet-Green's function. ... The single-particle Green's function for a dc-biased superlattices with single impurity potential varying harmonically with time has been obtained in the framework of U(t,t') method and Floquet-Green's function. The calculation of the local density of states shows that new states will emerge between the resonant Wannier-Stark states as a result of the intervention of time-dependent impurity potential, and the increase in electric field strength of impurity will result in the growing of the number of new states between the gaps of neighbouring Stark ladders. 展开更多
关键词 local density of states Floquet-Green's function defects and impurity
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Estimation the Density of Localized State Glassy Se_(100-x)Zn_(x) Thin Films by Using Space Charge Limited Conduction Measurement
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作者 Mohd.Nasir M.Zulfequar 《New Journal of Glass and Ceramics》 2012年第2期91-97,共7页
The dc conductivity in vacuum evaporated amorphous thin films of the glassy alloys Se100–xZnx(2 ≤ x ≤ 20) are meas-ured in the temperature range (308 - 388 K). The dc conductivity (σdc) is increases with increased... The dc conductivity in vacuum evaporated amorphous thin films of the glassy alloys Se100–xZnx(2 ≤ x ≤ 20) are meas-ured in the temperature range (308 - 388 K). The dc conductivity (σdc) is increases with increased of Zn concentration in the glassy alloys. The activation energy (ΔE) decreases with increase of Zn content. The conduction is explained on the basis of localized state in the mobility gap. To study the effect of electric field, a Current-Voltage characteristic has been measured at various fixed temperatures. The Current-Voltage data are fitted into the theory of space charge limited conduction in case of uniform distribution of traps in mobility gap at high electric fields (E ~104 V/cm) of these materials. The density of localized state (g0) are estimated by fitting in theory of space charge limited conduction (SCLC) at the temperature range of (352 - 372 K) in the glassy Se100–xZnx. The density of localized state (0) near the Fermi level are increases with increase of Zn concentration in the (Se100–xZnx) thin films and explain on the basis of increase of the Zn-Se bond. 展开更多
关键词 Density of localized State dc Conductivity Activation Energy(△E) SEM Thin Films
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Strain-Induced One-Dimensional Magnetic Stripe in Metallic Monolayer H-NbSe_(2)
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作者 Liangguang Jia Can Zhang +9 位作者 Fei Gao Yaoyao Chen Lili Zhou Fudi Zhou Xu Han Teng Zhang Daniel Sanchez-Portal Shiwu Gao Yu Zhang Yeliang Wang 《Chinese Physics Letters》 2025年第8期270-284,共15页
Lattice distortion of materials has a profound impact on their electronic and magnetic properties,which can generate local magnetic states in intrinsically non-magnetic systems.Here we report on the realization of a o... Lattice distortion of materials has a profound impact on their electronic and magnetic properties,which can generate local magnetic states in intrinsically non-magnetic systems.Here we report on the realization of a one-dimensional(1D)magnetic stripe in monolayer H-NbSe_(2)sustained by strain along the terraces of the graphene/SiC substrates.The strength of this tensile strain is widely tunable by the height-to-width ratio of the terraces.Increasing the tensile strength leads to the shifts and splitting of the Nb 4d bands crossing the Fermi energy,generating spin polarization in a 1D magnetic stripe along the terrace.Simultaneously,the charge-densitywave signature of strained H-NbSe_(2)is significantly suppressed.Such a magnetic stripe can be locally quenched by an individual Se-atom defect via the defect-induced Jahn-Teller distortion and charge density redistribution.These findings provide a different route to achieving and manipulating 1D magnetism in otherwise non-magnetic systems,offering a new way for spintronic devices. 展开更多
关键词 STRAIN lattice distortion materials electronic magnetic propertieswhich strain along terraces shifts splitting th tensile strength tensile strain local magnetic states
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Electronic Circular Dichroism Spectra Calculation Based on Generalized Energy-Based Fragmentation Approach
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作者 Zhongye Wang Ziyi Lv +1 位作者 Shuhua Li Wei Li 《Chinese Journal of Chemical Physics》 2025年第1期102-112,I0040-I0049,I0056,I0057,共23页
Electronic circular dichroism(ECD)spectrum is an important tool for as-sessing molecular chirality.Tradition-al methods,like linear response time-dependent density functional theory(LR-TDDFT),predict ECD spectra well ... Electronic circular dichroism(ECD)spectrum is an important tool for as-sessing molecular chirality.Tradition-al methods,like linear response time-dependent density functional theory(LR-TDDFT),predict ECD spectra well for small or medium-sized molecules,but struggle with large sys-tems due to high computational costs,making it a significant challenge to ac-curately and efficiently predict the ECD properties of complex systems.Within the framework of the generalized energy-based fragmentation(GEBF)method for localized excited states(ESs)calculation,we propose a combination algorithm for calculating rotatory strengths of ESs in condensed phase systems.This algorithm estimates the rotatory strength of the total system by calculating and combin-ing the transition electric and magnetic dipole moments of subsystems.We have used the GEBF method to calculate the ECD properties of chiral drug molecule derivatives,green fluo-rescent protein,and cyclodextrin derivatives,and compared their results with traditional methods or experimental data.The results show that this method can efficiently and accu-rately predict the ECD spectra of these systems.Thus,the GEBF method for ECD spectra demonstrates great potential in the chiral analysis of complex systems and chiral material design,promising to become a powerful theoretical tool in chiral chemistry. 展开更多
关键词 Generalized energy-based fragmentation approach Electronic circular dichro-ism Rotatory strength Chirality localized excited state
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Asymmetrical carbazole-benzonitrile-based TADF emitters designed by alternate donor-acceptor strategy
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作者 Zhaoyue Lü Tiantian Chai +8 位作者 Yichao Jin Xiao Wang Ye Zou Lijiang Zhang Jiankang Feng Mengtong Zhang Shuo Wang Chichong Lu Guofan Jin 《Chinese Chemical Letters》 2025年第6期500-504,共5页
A pair of asymmetric rigid carbazole-benzonitrile-based emitters were synthesized by strategically alternating donor and acceptor groups along the molecular edges.The spin-flip process is accelerated by both the forma... A pair of asymmetric rigid carbazole-benzonitrile-based emitters were synthesized by strategically alternating donor and acceptor groups along the molecular edges.The spin-flip process is accelerated by both the formation of localized and delocalized charge transfer states due to linearly positioned donors and strong spin-orbital coupling between different excitation feature of the lowest singlet and triplet excited states.This molecular architecture results in a remarkable short delayed lifespan of around 100 ns.The application of the two emitters in organic light-emitting diodes(OLEDs)achieves the highest external quantum efficiencies of 13.0%for the green emitter and 9.1%for the sky-blue emitter.Impressively,these devices maintain their high efficiency even at high luminance levels.The sustained efficiency is ascribed to the effective suppression of exciton quenching by substantially shortening delayed lifespan.These findings underscore the practical utility of the molecular design strategy that incorporates alternate donor and acceptor groups at the molecular periphery for shortening delayed fluorescence lifetime,and hold great promise for the development of high-performance OLEDs. 展开更多
关键词 Delayed fluorescence Linear D-A-D structure localized excited state Delocalized charge transfer state Spin-orbital coupling
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Klein Paradox and Disorder-Induced Delocalization of Dirac Quasiparticles in One-Dimensional Systems 被引量:1
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作者 袁建辉 成泽 +2 位作者 尹淼 曾其军 张俊佩 《Communications in Theoretical Physics》 SCIE CAS CSCD 2010年第12期1129-1133,共5页
Dirac particle penetration is studied theoretically with Dirac equation in one-dimensional systems. We investigate a one-dimensional system with N barriers where both barrier height and well width are constants random... Dirac particle penetration is studied theoretically with Dirac equation in one-dimensional systems. We investigate a one-dimensional system with N barriers where both barrier height and well width are constants randomly distributed in certain range. The one-parameter scaling theory for nonrelatiyistic particles is still valid for massive Dirac particles. In the same disorder sample, we find that the localization length of relativistic particles is always larger than that of nonrelativistic particles and the transmission coefficient related to incident particle in both cases fits the form T~ exp(-αL). More interesting, massless relativistic particles are entirely delocalized no matter how big the energy of incident particles is. 展开更多
关键词 Anderson localization disordered structures quantum transport localized states
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Curved surface effect and emission on silicon nanostructures 被引量:1
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作者 黄伟其 尹君 +6 位作者 周年杰 黄忠梅 苗信建 陈汉琼 苏琴 刘世荣 秦朝建 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第10期292-298,共7页
The curved surface (CS) effect on nanosilicon plays a main role in the activation for emission and photonic manipulation. The CS effect breaks the symmetrical shape of nanosilicon on which some bonds can produce loc... The curved surface (CS) effect on nanosilicon plays a main role in the activation for emission and photonic manipulation. The CS effect breaks the symmetrical shape of nanosilicon on which some bonds can produce localized electron states in the band gap. The investigation in calculation and experiment demonstrates that the different curvatures can form the characteristic electron states for some special bonding on the nanosilicon surface, which are related to a series of peaks in photoluminecience (PL), such as LN, LNO, Lo1, and Lo2 lines in PL spectra due to Si-N, Si-NO, Si=O, and Si-O-Si bonds on curved surface, respectively. Si-Yb bond on curved surface of Si nanostructures can provide the localized states in the band gap deeply and manipulate the emission wavelength into the window of optical communication by the CS effect, which is marked as the Lyb line of electroluminescence (EL) emission. 展开更多
关键词 silicon nanostructures curved surface effect characteristic line localized states
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Activation of silicon quantum dots and coupling between the active centre and the defect state of the photonic crystal in a nanolaser 被引量:1
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作者 黄伟其 陈汉琼 +2 位作者 苏琴 刘世荣 秦朝建 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第6期234-238,共5页
A new nanolaser concept using silicon quantum dots (QDs) is proposed. The conduction band opened by the quantum confinement effect gives the pumping levels. Localized states in the gap due to some surface bonds on S... A new nanolaser concept using silicon quantum dots (QDs) is proposed. The conduction band opened by the quantum confinement effect gives the pumping levels. Localized states in the gap due to some surface bonds on Si QDs can be formed for the activation of emission. An inversion of population can be generated between the localized states and the valence band in a QD fabricated by using a nanosecond pulse laser. Coupling between the active centres formed by localized states and the defect states of the two-dimensional (2D) photonic crystal can be used to select the model in the nanolaser. 展开更多
关键词 nanolaser Si quantum dots localized states photonic crystal
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Activation of silicon quantum dots for emission 被引量:1
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作者 黄伟其 苗信建 +2 位作者 黄忠梅 刘世荣 秦朝建 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第9期295-300,共6页
The emission of silicon quantum dots is weak when their surface is passivated well. Oxygen or nitrogen on the surface of silicon quantum dots can break the passivation to form localized electronic states in the band g... The emission of silicon quantum dots is weak when their surface is passivated well. Oxygen or nitrogen on the surface of silicon quantum dots can break the passivation to form localized electronic states in the band gap to generate active centers where stronger emission occurs. From this point of view, we can build up radiative matter for emission. Emissions of various wavelengths can be obtained by controlling the surface bonds of silicon quantum dots. Our experimental results demonstrate that annealing is important in the treatment of the activation, and stimulated emissions at about 600 and 700 nm take place on active silicon quantum dots. 展开更多
关键词 activation for emission silicon quantum dots localized states
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Photophysical Properties of 4t-(p-aminophenyl)-2,2':6',2″-terpyridine
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作者 宋朋 孙士国 +3 位作者 周潘旺 刘建勇 徐勇前 彭孝军 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2010年第5期558-564,622,共8页
Spectral and photophysical investigations of 4'-(p-aminophenyl)-2,2':6',2″-terpyridine (APT) have been performed in various solvents with different polarity and hydrogen-bonding ability. The emission spectra ... Spectral and photophysical investigations of 4'-(p-aminophenyl)-2,2':6',2″-terpyridine (APT) have been performed in various solvents with different polarity and hydrogen-bonding ability. The emission spectra of APT are found to exhibit dual fluorescence in polar solvents, which attributes to the local excited and intramolecular charge transfer states, respectively. The two-state model is proven out for APT in polar solvent by the time-correlated single photon counting emission decay measurement. Interestingly, the linear relationships of different emission maxima and solvent polarity parameter are found for APT in protic and aprotic solvents, because of the hydrogen bond formation between APT and alcohols at the amino nitrogen N25. Furthermore, the effects of the complexation of the metal ion with tpy group of APT and the hydrogen bond formation between APT with methanol at the terpyridine nitrogen N4-NS-N14 are also presented. The appearance of new long-wave absorption and fluorescence bands indicates that a new ground state of the complexes is formed. 展开更多
关键词 Dual fluorescence Local excited state Intramolecular charge transfer TERPYRIDINE COMPLEXATION Fluorescence decay
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Triplet fusion delayed fluorescence materials for OLEDs 被引量:2
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作者 Yan-Ju Luo Zhi-Yun Lu Yan Huang 《Chinese Chemical Letters》 SCIE CAS CSCD 2016年第8期1223-1230,1466,共8页
The development of fluorescent materials capable of harvesting triplet excitons efficiently is of great importance in achieving high-performance low-cost organic light-emitting diodes(OLEDs).Among the three mechanis... The development of fluorescent materials capable of harvesting triplet excitons efficiently is of great importance in achieving high-performance low-cost organic light-emitting diodes(OLEDs).Among the three mechanisms converting triplet to singlet excitons,triplet fusion delayed fluorescence(TFDF) plays a key role in the demonstration of highly efficient and reliable OLEDs,especially blue devices,for practice applications.This review focuses on the recent development of TFDF materials and their applications in OLEDs.Fundamental TFDF mechanism,molecular design principles,and the structure-property relationship of TFDF materials with a particular emphasis on their different excited state characters,are presented and discussed.Moreover,the future perspectives and ongoing challenges of TFDF materials are also highlighted. 展开更多
关键词 Triplet exciton harvesting Triplet fusion delayed fluorescence Organic light-emitting diode Local excited state Charge transfer
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