Mn distribution and austenite morphology at the early stage of intercritical annealing of 5Mn steel were investigated. It was experimentally demonstrated that a newly formed 20 nm-thick austenite was formed without th...Mn distribution and austenite morphology at the early stage of intercritical annealing of 5Mn steel were investigated. It was experimentally demonstrated that a newly formed 20 nm-thick austenite was formed without the partitioning of Mn. The elemental analysis confirmed that the growth of austenite should be controlled by the diffusion of C prior to the diffusion of Mn at a low heating rate. The austenite growth started under negligible-partitioning local equilibrium mode and then switched to partitioning local equilibrium mode. Mn segregation at the γ/α interface suggested that the collector plate mechanism was the essential way of Mn partitioning at the early stage of austenite growth.展开更多
Vapor transport growth of atomically thin MoS2 layers on patterned substrates is investigated, as it is a step towards the self-aligned growth and formation of heterojunctions, which could be useful in future applicat...Vapor transport growth of atomically thin MoS2 layers on patterned substrates is investigated, as it is a step towards the self-aligned growth and formation of heterojunctions, which could be useful in future applications. Enhanced formation of MoS2 flakes at the pattern edges is observed on both the substrates examined, namely, patterned thermal SiO2 on Si（100） and graphene flakes on SiO2. The diffusion driven growth leads to the formation of MoS2 monolayers （MLs） with sizes of tens of micrometers around the edges of SiO2 patterns. The growth mode and the optical quality of the MoS2 flakes can be controlled by varying the substrate temperature. Besides the lateral growth, 3R-type pyramids are obtained on prolonging the growth. Lateral MoS2-graphene heterostructures are obtained by using graphene flakes on SiO2 as a substrate.展开更多
基金Item Sponsored by National Basic Research Program of China(2010CB630800,2015CB921700)National Natural Science Foundation of China(51001064,51471096)+1 种基金Specialized Research Fund for the Doctoral Program of Higher Education of China(20100002120047)Tsinghua University Initiative Scientific Research Program(20141081200)
文摘Mn distribution and austenite morphology at the early stage of intercritical annealing of 5Mn steel were investigated. It was experimentally demonstrated that a newly formed 20 nm-thick austenite was formed without the partitioning of Mn. The elemental analysis confirmed that the growth of austenite should be controlled by the diffusion of C prior to the diffusion of Mn at a low heating rate. The austenite growth started under negligible-partitioning local equilibrium mode and then switched to partitioning local equilibrium mode. Mn segregation at the γ/α interface suggested that the collector plate mechanism was the essential way of Mn partitioning at the early stage of austenite growth.
文摘Vapor transport growth of atomically thin MoS2 layers on patterned substrates is investigated, as it is a step towards the self-aligned growth and formation of heterojunctions, which could be useful in future applications. Enhanced formation of MoS2 flakes at the pattern edges is observed on both the substrates examined, namely, patterned thermal SiO2 on Si（100） and graphene flakes on SiO2. The diffusion driven growth leads to the formation of MoS2 monolayers （MLs） with sizes of tens of micrometers around the edges of SiO2 patterns. The growth mode and the optical quality of the MoS2 flakes can be controlled by varying the substrate temperature. Besides the lateral growth, 3R-type pyramids are obtained on prolonging the growth. Lateral MoS2-graphene heterostructures are obtained by using graphene flakes on SiO2 as a substrate.
