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用于lift-off工艺的电子束蒸发设备设计及工艺研究
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作者 胡凡 张双景 +3 位作者 杨露 王建青 王栋 于超文 《中国集成电路》 2025年第7期78-82,共5页
本研究基于剥离(lift-off)工艺,采用电子束蒸发设备设计原理,搭建了一台蒸发距离为1500 mm的M67130-1/UM型高精度多层金属蒸镀设备,并开展了相关工艺基础研究。研究结果表明,Al、Ge、NiGr金属薄膜厚度分布规律呈现沿伞架中心向伞架边缘... 本研究基于剥离(lift-off)工艺,采用电子束蒸发设备设计原理,搭建了一台蒸发距离为1500 mm的M67130-1/UM型高精度多层金属蒸镀设备,并开展了相关工艺基础研究。研究结果表明,Al、Ge、NiGr金属薄膜厚度分布规律呈现沿伞架中心向伞架边缘逐渐变薄的规律,而Ni薄膜基片呈现中间厚两边薄的特征;蒸发功率与蒸发材料及蒸发状态相关,其中Ge的蒸发功率最大,Ni的最低;合理设计修正板可显著改善膜层均匀性,经优化后制备的Al、Ge、NiGr、Ni金属薄膜片间均匀性分别由9.61%、12.48%、7.52%和12.22%提高至1.49%、2.71%、1.15%和1.62%,均控制在3%以内。 展开更多
关键词 电子束蒸发 lift-off 修正板 均匀性
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基于lift-off工艺的RF MEMS开关触点平坦化方法
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作者 杨彪 诸葛明华 +1 位作者 吴国才 容炎森 《微纳电子技术》 2025年第2期116-121,共6页
采用表面微加工工艺制备射频微机电系统(RF MEMS)开关,开关触点的平坦化是一项关键工艺,直接影响RF MEMS开关的机械和电学性能。设计静电驱动接触式的RF MEMS开关结构,然后通过在触点上进行套刻制备光刻胶岛、蒸镀制备铝牺牲层,利用lift... 采用表面微加工工艺制备射频微机电系统(RF MEMS)开关,开关触点的平坦化是一项关键工艺,直接影响RF MEMS开关的机械和电学性能。设计静电驱动接触式的RF MEMS开关结构,然后通过在触点上进行套刻制备光刻胶岛、蒸镀制备铝牺牲层,利用lift-off工艺解决触点与牺牲层平坦化的问题。再采用电镀工艺制备金悬臂梁,使用氢氧化钠溶液腐蚀铝释放获得RF MEMS开关。通过原子力显微镜(AFM)、聚焦离子束显微镜(FIB)等仪器对样品进行形貌测量,数据显示开关触点与铝牺牲层的高度差约为27.36 nm,悬臂梁与下方平面的左右空隙差约为22 nm,结果表明通过该方法能够实现开关触点与牺牲层的高度平坦化。 展开更多
关键词 射频微机电系统(RF MEMS)开关 开关触点 牺牲层 平坦化 lift-off工艺
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无铅焊接中Lift-off现象产生的原因及抑制对策 被引量:2
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作者 李元山 陈旭 《计算机工程与科学》 CSCD 2006年第7期105-108,共4页
本文首次提出三要素法来解释Lift-off的形成机理。相比传统的“Bi-Segregation”失效机理,“三要素法”可以解释含Bi和不含Bi的所有无铅钎料产生或不产生Lift-off的原因,并由此找出了Lift-off的抑制对策。
关键词 无铅钎料 波峰焊 lift-off 三要素法
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Sand particle lift-off velocity measurements and numerical simulation of mass flux distributions in a wind tunnel 被引量:4
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作者 XIAO Fengjun DONG Zhibao +2 位作者 GUO Liejin WANG Yueshe LI Debiao 《Journal of Arid Land》 SCIE CSCD 2017年第3期331-344,共14页
Lift-off velocity of saltating sand particles in wind-blown sand located at 1.0 mm above the sand bed surface was measured using a phase Doppler particle analyzer in a wind tunnel. The results show that the probabilit... Lift-off velocity of saltating sand particles in wind-blown sand located at 1.0 mm above the sand bed surface was measured using a phase Doppler particle analyzer in a wind tunnel. The results show that the probability distribution of lift-off velocity can be expressed as a lognormal function, while that of lift-off angle follows an exponential function. The probability distribution of lift-off angle conditioned for each lift-off velocity also follows an exponential function, with a slope that becomes steeper with increasing lift-off velocity. This implies that the probability distribution of lift-off velocity is strongly dependent on the lift-off angle. However, these lift-off parameters are generally treated as an independent joint probability distribution in the literature. Numerical simulations were carried out to investigate the effects of conditional versus independent joint probability distributions on the vertical sand mass flux distribution. The simulation results derived from the conditional joint probability distribution agree much better with experimental data than those from the independent ones. Thus, it is better to describe the lift-off velocity of saltating sand particles using the conditional joint probability distribution. These results improve our understanding of saltation processes in wind-blown sand. 展开更多
关键词 lift-off velocity lift-off angle joint probability distribution sand mass flux SALTATION
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低温砷化镓的外延lift-off和范德华贴附研究
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作者 蓝天 倪国强 《高技术通讯》 CAS CSCD 北大核心 2006年第2期163-166,共4页
研究了低温砷化镓的外延lift-off和基于范德华力在石英新衬底上贴附的实验方法:腐蚀掉100nm厚的AlAs牺牲层,将外延生长的500nm厚的低温砷化镓(LT-GaAs)从生长衬底上揭下(lift-off),借助于范德华力将LT-GaAs外延膜贴附在新衬底上... 研究了低温砷化镓的外延lift-off和基于范德华力在石英新衬底上贴附的实验方法:腐蚀掉100nm厚的AlAs牺牲层,将外延生长的500nm厚的低温砷化镓(LT-GaAs)从生长衬底上揭下(lift-off),借助于范德华力将LT-GaAs外延膜贴附在新衬底上。Lift—off之前在LT-GaAs表面上滴附黑蜡,以增强在lift-off过程中对LT-GaAs的保护,和加快反应气体扩散离开反应区的过程。针对500nm厚的LT-GaAs外延薄膜的揭起和贴附,给出了低温砷化镓的最佳lift-off尺寸和提高范德华力贴附质量的实验技术。此外还给出了利用所得到的lift-off后的LT-GaAs制备的共平面条形结构光导开关的时间特性:上升时间小于1.5ps,FWHM小于2ps。 展开更多
关键词 低温砷化镓 外延lift-off 范德华力贴附 光导开关
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反转胶lift-Off工艺制备堆栈电感 被引量:6
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作者 何大伟 程新红 +3 位作者 王中健 徐大朋 宋朝瑞 俞跃辉 《功能材料与器件学报》 CAS CSCD 北大核心 2010年第2期109-113,共5页
本文采用反转胶lift-off工艺,对比分析了金属淀积方式、光刻胶的选择及光刻胶烘干时间对金属剥离效果的影响,制备出最小线宽4μm,最小间距4μm,厚度为1μm,线宽误差小于0.5μm的金属线条,并最终实现具有三层金属的堆栈电感,经光学显微... 本文采用反转胶lift-off工艺,对比分析了金属淀积方式、光刻胶的选择及光刻胶烘干时间对金属剥离效果的影响,制备出最小线宽4μm,最小间距4μm,厚度为1μm,线宽误差小于0.5μm的金属线条,并最终实现具有三层金属的堆栈电感,经光学显微镜和台阶仪观测表明,器件外观良好成品率高。 展开更多
关键词 堆栈电感 lift—off 金属剥离 反转胶 SOI
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Experimental analysis of sand particles' lift-off and incident velocities in wind-blown sand flux 被引量:10
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作者 Li Xie Zhibao Dong Xiaojing Zheng 《Acta Mechanica Sinica》 SCIE EI CAS CSCD 2005年第6期564-573,共10页
The probability distributions of sand particles' lift-off and incident velocities in a wind-blown sand flux play very important roles in the simulation of the wind-blown sand movement. In this paper, the vertical and... The probability distributions of sand particles' lift-off and incident velocities in a wind-blown sand flux play very important roles in the simulation of the wind-blown sand movement. In this paper, the vertical and the horizontal speeds of sand particles located at 1.0 mm above a sand-bed in a wind-blown sand flux are observed with the aid of Phase Doppler Anemometry (PDA) in a wind tunnel. Based on the experimental data, the probability distributions of not only the vertical lift-off speed but also the lift-off velocity as well as its horizontal component and the incident velocity as well as its vertical and horizontal components can be obtained by the equal distance histogram method. It is found, according to the results of the X^2-test for these probability distributions, that the probability density functions (pdf's) of the sand particles' lift-off and incident velocities as well as their vertical com- ponents are described by the Gamma density function with different peak values and shapes and the downwind incident and lift-off horizontal speeds, respectively, can be described by the lognormal and the Gamma density functions, These pdf's depend on not only the sand particle diameter but also the wind speed. 展开更多
关键词 Wind-blown sand movement - Tunnel experiment- Incident velocity. lift-off velocity Probability density
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Spatiotemporal evolution of high-aspect-ratio filamentary trace in sapphire of picosecond pulse burst-mode for laser lift-off 被引量:2
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作者 SUN Wei-gao YAN Tian-yang +1 位作者 WANG Yu-heng JI Ling-fei 《Journal of Central South University》 SCIE EI CAS CSCD 2022年第10期3304-3311,共8页
The influence of the picosecond(ps) pulsed burst with a nanosecond scale of temporal separation(50 ns) on filamentary traces in sapphire substrate is investigated. The spatiotemporal evolution of the filamentary plasm... The influence of the picosecond(ps) pulsed burst with a nanosecond scale of temporal separation(50 ns) on filamentary traces in sapphire substrate is investigated. The spatiotemporal evolution of the filamentary plasma string induced by sub-pulses of the burst-mode is revealed according to the analysis of the instantaneous photoluminescence images. Due to the presence of residual plasma, the energy loss of sub-pulse during the balancing of self-focusing effect is reduced, and thus refreshes the plasma via refocusing. The refreshed plasma peak generated by the subsequent subpulse appears at relatively low density positions in the formed filamentary plasma string, which results in more uniform densities and less spatial overlap among the plasma peaks. The continuity and uniformity of the filamentary trace in sapphire are enhanced by the burst-mode. Besides, the burst filamentary propagation can also remain effective when the sub-pulse energy is below the self-focusing threshold. Based on this uniform and precise energy propagation mode, the feasibility of its use for the laser lift-off(LLO) process is verified. 展开更多
关键词 picosecond laser filamentary plasma string BURST-MODE spatiotemporal evolution laser lift-off
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国产Lift-Off光刻胶在空间用太阳电池中的应用
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作者 杨智敏 李晓东 张霞 《科学技术创新》 2021年第10期42-44,共3页
选用两种较为典型的国产Lift-Off光刻胶(A和B)进行了实验优化,并进行了电极蒸镀后的牢固度测试、电致发光测试和电性能测试。在牢固度测试中发现,A电池样品有掉栅现象,B电池样品没有出现掉栅现象。通过EL测试和电性能测试分析证明,A电... 选用两种较为典型的国产Lift-Off光刻胶(A和B)进行了实验优化,并进行了电极蒸镀后的牢固度测试、电致发光测试和电性能测试。在牢固度测试中发现,A电池样品有掉栅现象,B电池样品没有出现掉栅现象。通过EL测试和电性能测试分析证明,A电池的电极与太阳电池基体存在局部的接触不良现象。通过实验筛选出了一种应用前景较好的B型号国产Lift-Off负性光刻胶,有望经过进一步验证和优化后逐步应用在空间用太阳电池生产中。 展开更多
关键词 lift-off 光刻胶 紫外负性光刻胶 太阳电池
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Epitaxial Lift-Off of Flexible GaN‑Based HEMT Arrays with Performances Optimization by the Piezotronic Effect 被引量:1
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作者 Xin Chen Jianqi Dong +6 位作者 Chenguang He Longfei He Zhitao Chen Shuti Li Kang Zhang Xingfu Wang Zhong Lin Wang 《Nano-Micro Letters》 SCIE EI CAS CSCD 2021年第4期221-233,共13页
High-electron-mobility transistors(HEMTs)are a promising device in the field of radio frequency and wireless communication.However,to unlock the full potential of HEMTs,the fabrication of large-size flexible HEMTs is ... High-electron-mobility transistors(HEMTs)are a promising device in the field of radio frequency and wireless communication.However,to unlock the full potential of HEMTs,the fabrication of large-size flexible HEMTs is required.Herein,a large-sized(>2 cm^(2))of AlGaN/AlN/GaN heterostructure-based HEMTs were successfully stripped from sapphire substrate to a flexible polyethylene terephthalate substrate by an electrochemical lift-off technique.The piezotronic effect was then induced to optimize the electron transport performance by modulating/tuning the physical properties of two-dimensional electron gas(2DEG)and phonons.The saturation current of the flexible HEMT is enhanced by 3.15%under the 0.547%tensile condition,and the thermal degradation of the HEMT was also obviously suppressed under compressive straining.The corresponding electrical performance changes and energy diagrams systematically illustrate the intrinsic mechanism.This work not only provides in-depth understanding of the piezotronic effect in tuning 2DEG and phonon properties in GaN HEMTs,but also demonstrates a low-cost method to optimize its electronic and thermal properties. 展开更多
关键词 AlGaN/AlN/GaN heterojunction Epitaxial lift-off Flexible membrane Two-dimensional electron gas Piezotronic effect
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AZ~ 15nXT Photoresist for Lift-off Applications
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作者 CHEN Chun-wei TOUKHY Medhat +3 位作者 BOGUSZ Zachary MEYER Stephen LIU Wei-hong LU Ping-hung 《高分子通报》 CAS CSCD 北大核心 2014年第12期170-178,共9页
AZ15nXT is a chemically-amplified negative-tone thick film photoresist.The resist has vertical profile and is widely used for redistribution layer(RDL)and through silicon vias(TSV)applications.For lift-off applicati... AZ15nXT is a chemically-amplified negative-tone thick film photoresist.The resist has vertical profile and is widely used for redistribution layer(RDL)and through silicon vias(TSV)applications.For lift-off applications,however,the inverted profile is needed.In this paper,we report the effects of process conditions on the resist profile and process window for lift off applications. 展开更多
关键词 Chemically amplified THICK film lift-off NEGATIVE PHOTORESIST INVERTED PROFILE
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萘酚基酚醛树脂的合成及其在lift-off光刻胶中的应用
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作者 孙小侠 司树伟 +2 位作者 郑祥飞 刘敬成 穆启道 《影像科学与光化学》 CAS 2020年第4期609-614,共6页
首先以α-萘酚、间甲酚、甲醛为单体,通过缩聚反应合成了萘酚基酚醛树脂NAPR,随后与二碳酸二叔丁酯(DBDC)反应制备了一系列t-BOC改性的萘酚基酚醛树脂NAPR-BOC。用红外(FT-IR)、核磁(1 H NMR)、凝胶色谱(GPC)、热失重分析(TGA)对其结构... 首先以α-萘酚、间甲酚、甲醛为单体,通过缩聚反应合成了萘酚基酚醛树脂NAPR,随后与二碳酸二叔丁酯(DBDC)反应制备了一系列t-BOC改性的萘酚基酚醛树脂NAPR-BOC。用红外(FT-IR)、核磁(1 H NMR)、凝胶色谱(GPC)、热失重分析(TGA)对其结构及性能进行了表征。以NAPR-BOC-2为基体树脂配制成lift-off光刻胶,测试了光刻胶的分辨率、形貌和耐热性,得到的光刻胶分辨率最大为0.6μm,耐热可达130℃。 展开更多
关键词 Α-萘酚 酚醛树脂 正性光刻胶 NAPR-BOC lift-off
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The lift-off effect analysis of flexible differential pick-up koch fractal eddy current probe
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作者 CHEN Guolong FAN Le +3 位作者 ZHANG Shuaishuai HAN Yu LI Yixin ZHANG Yanlong 《Journal of Measurement Science and Instrumentation》 CAS CSCD 2024年第4期432-444,共13页
This study utilized finite element simulation and experimental methods to investigate the evolution of crack detection performanceof a flexible differential fractal Koch eddy current probe at different excitation freq... This study utilized finite element simulation and experimental methods to investigate the evolution of crack detection performanceof a flexible differential fractal Koch eddy current probe at different excitation frequencies as the lift-off distance increases.As the lift-off distanceincreased,the distribution shape of induced eddy currents changed,leading to reduced similarity in the shape of the excitation coil and an expandeddistribution range of induced eddy currents,ultimately resulting in weakened output signal strength.The experimental results showed that forexcitation frequencies of 10 kHz,20 kHz,50 kHz,100 kHz,200 kHz,500 kHz,and1000 kHz,the maximum lift distances of the real partof the output signal when cracks were detected were 5.0 mm,7.0 mm,8.0 mm,8.0 mm,8.0 mm,6.5 mm,and 4.0 mm,respectively.Theimaginary parts were 6.5 mm,6.5 mm,7.5 mm,5.5 mm,8.0 mm,6.5 mm,and 6.5 mm,respectively. 展开更多
关键词 eddy current testing lift-off effect nondestructive testing crack detection fractal geometry
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Fabrication of THz Dipole Antenna Using Lift-off Method
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作者 SHOU Xiang BAI Lu-gang +1 位作者 SU Hong-yan GAN Ben-xin 《Semiconductor Photonics and Technology》 CAS 2009年第4期247-251,共5页
The microfabrication technique for THz dipole antenna,"lift-off" was studied in this paper.Its procedure has been examined in detail,and discreetly tweaked.Particularly,Chlorobenzene is suggested to assist t... The microfabrication technique for THz dipole antenna,"lift-off" was studied in this paper.Its procedure has been examined in detail,and discreetly tweaked.Particularly,Chlorobenzene is suggested to assist the formation of undercut indispensible for fulfilling "lift-off".The experimental results of fabricated antennas confirm the effectiveness of this method. 展开更多
关键词 terahertz dipole antenna lift-off MICROFABRICATION
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国产KrF Lift-off光刻胶在高性能滤波器芯片加工中的应用 被引量:2
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作者 曹明霞 吴信 《功能材料与器件学报》 CAS 2021年第4期367-370,共4页
集成电路是信息社会的基础设施,集成电路制造的核心工艺是光刻工艺,光刻胶的国产化是我国集成电路产发展的重要保障。本文介绍了HTKN601在声表面波滤波器件加工中的应用,利用该光刻胶剥离技术(Lift-off)在曝光和显影过程之后,显示出独... 集成电路是信息社会的基础设施,集成电路制造的核心工艺是光刻工艺,光刻胶的国产化是我国集成电路产发展的重要保障。本文介绍了HTKN601在声表面波滤波器件加工中的应用,利用该光刻胶剥离技术(Lift-off)在曝光和显影过程之后,显示出独特且控制良好的"底切"轮廓,从而能够在剥离后形成微细金属的图形。同时,通过树脂及配方筛选优化,进一步改善去胶后残留问题。该产品技术实现了线宽小于0.25μm的图形制作,可广泛应用于基于金属剥离工艺的微纳图形加工技术。 展开更多
关键词 声表面波 负性光刻胶 剥离工艺
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Experimental study of laser lift-off of ultra-thin polyimide film for flexible electronics 被引量:5
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作者 BIAN Jing ZHOU LaoBoYang +4 位作者 WAN XiaoDong LIU MinXiao ZHU Chen HUANG YongAn YIN ZhouPing 《Science China(Technological Sciences)》 SCIE EI CAS CSCD 2019年第2期233-242,共10页
It is increasingly crucial for flexible electronics to efficiently and reliably peel large-area, ultra-thin flexible films off from rigid substrate serving as substrates of flexible electronics device, especially in i... It is increasingly crucial for flexible electronics to efficiently and reliably peel large-area, ultra-thin flexible films off from rigid substrate serving as substrates of flexible electronics device, especially in industrial production. This paper experimentally investigated the mechanism and technologic characteristics of laser lift-off(LLO) process of ultra-thin(~ 2 μm) polyimide(PI)film. It was found increasingly difficult to obtain desirable ultra-thin PI film by LLO with the decrease of the film thickness. The optimal process parameters were achieved considering laser fluence and accumulated irradiation times(AIT), which were found to be strongly correlative to the thickness of PI film. The process mechanism of LLO of PI film was disclosed that laser ablation of interfacial PI will result in the formation of gas products between the PI and glass substrate, enabling the change of interface microstructures to reduce the interface bond strength. The amount of gas products mainly determines the result of LLO process for ultra-thin PI film, from residual adhesion to wrinkles or cracking. The strategy of multi-scanning based on multiple irradiations of low-energy laser pulses was presented to effectively achieve a reliable LLO process of ultra-thin PI film. This study provides an attractive route to optimize the LLO process for large-scale production of ultra-thin flexible electronics. 展开更多
关键词 laser lift-off INTERFACIAL PEELING DELAMINATION flexible ELECTRONICS thin film
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GaN/metal/Si heterostructure fabricated by metal bonding and laser lift-off 被引量:1
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作者 张小英 阮育娇 +1 位作者 陈松岩 李成 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第12期5-8,共4页
A process methodology has been adopted to transfer GaN thin films grown on sapphire substrates to Si substrates using metal bonding and laser lift-off techniques. After bonding, a single KrF (248 nm) excimer laser p... A process methodology has been adopted to transfer GaN thin films grown on sapphire substrates to Si substrates using metal bonding and laser lift-off techniques. After bonding, a single KrF (248 nm) excimer laser pulse was directed through the transparent sapphire substrates followed by low-temperature heat treatment to remove the substrates. The influence of bonding temperature and energy density of the excimer laser on the structure and optical properties of GaN films were investigated systemically. Atomic force microscopy, X-ray diffraction and photoluminescence measurements showed that (1) the quality of the GaN film was higher at a lower bonding temperature and lower energy density; (2) the threshold of the energy density of the excimer laser lift-off GaN was 300 mJ/cm^2. The root-mean-square roughness of the transferred GaN surface was about 50 nm at a bonding temperature of 400 ℃. 展开更多
关键词 GaN films SILICON metal bonding laser lift-off atomic force microscopy X-ray diffraction
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Flexible bidirectional self-powered photodetector with significantly reduced volume and accelerated response speed based on hydrogel and lift-off GaN-based nanowires
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作者 Min Jiang Yukun Zhao +6 位作者 Penghui Zheng Jianya Zhang Wenxian Yang Min Zhou Yuanyuan Wu Renjun Pei Shulong Lu 《Fundamental Research》 CAS CSCD 2024年第2期369-378,共10页
Due to the wide range of potential applications for next-generation multi-functional devices,the flexible selfpowered photodetector(PD)with polarity-switchable behavior is essential but very challenging to be realized... Due to the wide range of potential applications for next-generation multi-functional devices,the flexible selfpowered photodetector(PD)with polarity-switchable behavior is essential but very challenging to be realized.Herein,a wearable bidirectional self-powered PD based on detached(Al,Ga)N and(In,Ga)N nanowires has been proposed and demonstrated successfully.Arising from the photovoltage-competing dynamics across(Al,Ga)N and(In,Ga)N nanowire photoelectrodes,such PD can generate the positive(33.3 mA W−1)and negative(-0.019 mA W−1)photo-responsivity under ultraviolet(UV)and visible illumination,respectively,leading to the bidirectional photocurrent behavior.Thanks to the introduction of quasi solid-state hydrogel,the PD can work without the liquid-electrolyte,thus remarkably reducing the volume from about 482 cm3 to only 0.18 cm3.Furthermore,the use of hydrogel is found to enhance response speed in the UV range by reducing the response time for more than 95%,which is mainly attributed to the increased open circuit potential and reduced ion transport distance.As the GaN connecting segment is pretty thin,the piezoelectric charges generated by stress are proposed to have only a limited effect on the photocurrent density.Therefore,both the stable on-off switching characteristics and photocurrent densities can still be achieved after being bent 400 times.With an excellent flexibility,this work creates opportunities for technological applications of bidirectional photocurrent PDs in flexible optoelectronic devices,e.g.,wearable intelligent sensors. 展开更多
关键词 Flexible photodetector Bidirectional photocurrent lift-off GaN-based nanowires HYDROGEL Self-powered device
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Nanoparticle-based lift-off technique for ultra-thin nanoporous film preparation
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作者 WANG Wei ZHAO Yu LEI YinHua LI ZhiHong 《Science in China(Series F)》 2008年第6期819-824,共6页
Ultra-thin membrane with nanoscale through hole has great potential in biomedical applications, where precise controllability of porosity, pore size and film thickness is urgently required. The present work proposed a... Ultra-thin membrane with nanoscale through hole has great potential in biomedical applications, where precise controllability of porosity, pore size and film thickness is urgently required. The present work proposed a cost-effective way to prepare the ultra-thin nanoporous film with a promising controllability. Monodispersed nanoparticle, rather than photoresist, is used as the sacrificial material for this new lift-off process. By releasing the particles, holes can be achieved with predeter-mined characters. A 110 nm-thick nanoporous aluminum film with well-controlled pore's diameter was successfully fabricated to validate the technique. The technique has wider process window and better applicability than other nanofabrication methods. 展开更多
关键词 NANOPARTICLE lift-off nanoporous film
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石英微机械陀螺片上温度补偿技术研究
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作者 谢佳维 白顺风 +6 位作者 曾庆海 简小娟 李贵龙 胡爽 赵建华 王枥 黎元凯 《压电与声光》 北大核心 2025年第6期1085-1090,共6页
针对目前陀螺温补过程中普遍存在的温度迟滞问题,本文利用金属铂(Pt)具有良好的温度敏感性和线性度的特性,设计了单片集成铂电阻的石英微机械陀螺芯片,直接测量陀螺敏感芯片温度作为特征量对陀螺零位进行补偿。首先,采用光刻+剥离(lift-... 针对目前陀螺温补过程中普遍存在的温度迟滞问题,本文利用金属铂(Pt)具有良好的温度敏感性和线性度的特性,设计了单片集成铂电阻的石英微机械陀螺芯片,直接测量陀螺敏感芯片温度作为特征量对陀螺零位进行补偿。首先,采用光刻+剥离(lift-off)的方式制备了铂电阻,并采用石英MEMS工艺将铂电阻和陀螺芯片复合在一起。其次,对铂电阻的稳定化参数进行了摸底,铂电阻阻值在125℃下7天趋于稳定,同时测量了铂电阻的标度因数为2.15Ω/℃。最后,在相同变温条件下对比了基于常规温度传感器与铂电阻的陀螺零位温度迟滞。结果表明,基于常规温度传感器的陀螺零位普遍具有20(°)/h的温度迟滞,基于集成铂电阻的陀螺零位温度迟滞接近0,且集成铂电阻陀螺的零偏稳定性较常规温度传感器普遍提升1倍左右,可在温度变化剧烈的应用场景进一步推广应用。 展开更多
关键词 石英微机械陀螺 铂电阻 lift-off 温度迟滞 温度补偿
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